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EP1323195A1 - Electrode et trace conducteur pour composants organiques et procede de production correspondant - Google Patents

Electrode et trace conducteur pour composants organiques et procede de production correspondant

Info

Publication number
EP1323195A1
EP1323195A1 EP01978173A EP01978173A EP1323195A1 EP 1323195 A1 EP1323195 A1 EP 1323195A1 EP 01978173 A EP01978173 A EP 01978173A EP 01978173 A EP01978173 A EP 01978173A EP 1323195 A1 EP1323195 A1 EP 1323195A1
Authority
EP
European Patent Office
Prior art keywords
conductive
electrode
conductor track
functional polymer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01978173A
Other languages
German (de)
English (en)
Inventor
Wolfgang Clemens
Adolf Bernds
Henning Rost
Walter Fix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PolyIC GmbH and Co KG
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10047171A external-priority patent/DE10047171A1/de
Priority claimed from DE10122213A external-priority patent/DE10122213C1/de
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP1323195A1 publication Critical patent/EP1323195A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Definitions

  • the invention relates to electrodes and / or conductor tracks for organic components, in particular for components such as field effect transistors (OFETs), photoelectronic components and / or light emitting diodes (OLEDs), which have conductive and finely structured electrode tracks.
  • OFETs field effect transistors
  • OLEDs light emitting diodes
  • the object of the present invention is to rationalize the process steps in the production of long-lasting, high-resolution conductive tracks and / or electrodes of organic functional layers on a substrate.
  • the invention relates to an electrode and / or conductor track (2 l ) which can be produced by treating an organic functional polymer with a chemical compound.
  • the invention also relates to a method for producing an electrode and / or a conductor track by treating an organic functional polymer with a chemical compound.
  • the electrode and / or conductor track is produced by partial activation or deactivation of the organic functional polymer.
  • An advantageous embodiment of the invention is a method for producing high-resolution, conductive structures on a substrate by applying a conductive organic layer and producing a non-conductive organic matrix in the conductive organic layer by structuring, which is characterized in that the non-conductive matrix is subsequently connected selectively removed with a non-basic solvent or using oxidative etching.
  • the conductive structures formed that is to say webs or fingers on the substrate, are thus effectively diffused from being destroyed by the non-conductive areas. protected basic species.
  • the structures formed are not sensitive to air, which guarantees a long service life of all-organic, optoelectronic components produced from them, such as field effect transistors (OFET) or light-emitting diodes (OLED).
  • OFET field effect transistors
  • OLED light-emitting diodes
  • substrate is understood to mean, for example, a flexible substrate such as a carrier film. You or a non-flexible substrate may or may not already have one or more functional layers.
  • the conductive organic layer is preferably applied to the substrate by knife coating, spraying, spin coating or by screen printing. Since the polymer materials can be applied from the solution, an extremely homogeneous thin layer is produced in particular by the latter method.
  • the conductive organic polymer is preferably polyaniline doped with, for example, camphorsulfonic acid (CSA). All conductive organic materials that are selectively deactivated can be used here. In particular, other conductive polymers can also be used, provided they change to the non-conductive state under the action of a base or can be etched away oxidatively.
  • CSA camphorsulfonic acid
  • the non-conductive organic matrix is formed in selected areas by deprotonation of the conductive layer.
  • the conductive layer is first made of doped polyaniline (PANI) or another conductive organic material such as polyethylene dioxythiophene (PEDOT).
  • PANI doped polyaniline
  • PEDOT polyethylene dioxythiophene
  • the photoresist is made base-soluble in selected areas by structured exposure, for example using a shadow mask, and these base-soluble areas are detached by a basic solvent.
  • An advantage of this procedure is that the underlying, that is, exposed, polyaniline layer is deprotonated by the basic solvent and thus becomes non-conductive.
  • Liquid tetrabutylammonium compounds or solutions thereof can be used as basic solvents.
  • Another basic solvent or developer is, for example, "AZ 1512 HS" (Merck).
  • the remaining photoresist is then stripped off with a suitable solvent, such as, for example, lower alcohols or etons.
  • a suitable solvent such as, for example, lower alcohols or etons.
  • the non-conductive matrix can be extracted with a non-basic solvent before or after this step.
  • Dimethylformamide which has been freshly distilled can be used in particular as the non-basic solvent. This ensures that this solvent is free of amines. At the same time, this ensures that deprotonation of the fine conductive fingers by the amine is prevented. If the non-conductive matrix, e.g. oxidative, etched away, this step must be done before removing the photoresist.
  • the organic functional layer is applied in a conductive and planar manner to a substrate. At the points where this layer of organic functional polymer is treated with the chemical compound, it is converted into its non-conductive form.
  • the organic functional polymer is treated by printing with the chemical compound.
  • Preferred printing processes for this are offset printing, screen printing, pad printing and / or micro-contact printing ( ⁇ CP printing).
  • Printing with the chemical compound causes a drastic change in the conductivity in the organic functional polymer.
  • a fine structuring of the functional layer can be achieved through the printing technique. The resolution depends on the performance of the respective printing process.
  • the pressure can e.g. with a stamp, as with pad printing or with a stamp roll in a continuous process.
  • the chemical compound that deactivates or activates the organic functional polymer is absorbed in the stamp.
  • the stamp can be made of an absorbent silicone elastomer.
  • the chemical compound is preferably a base such as e.g. an amine, a hydroxide etc.
  • a base such as e.g. an amine, a hydroxide etc.
  • all bases, and especially those that deprotonate, can be used.
  • organic material or "organic functional polymer” here encompasses all types of organic, organometallic and / or organic-inorganic plastics (hybrids), in particular those which are described in English e.g. With
  • plastics are called. These are all types of substances with the exception of the semiconductors that form the classic diodes (germanium, silicon) and the typical metallic conductors. A restriction in the dogmatic sense to organic material as carbon-containing material is therefore not provided, but rather is also due to the widespread use of e.g. Silicones thought. Furthermore, the ter should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but instead the use of
  • a thin layer of conductive polyaniline is produced by casting, spin coating, knife coating, etc.
  • a basic compound amine, hydroxide
  • the PANI is deprotonated at the point of contact with the base, as a result of which it loses its conductivity.
  • the entire layer can still be rinsed and dried and thus fixed. The final rinsing can selectively remove non-protonated, non-conductive areas of the functional polymer.
  • a combination of the printing process with radiation and / or exposure through a shadow mask is also possible.
  • the method according to the invention is particularly suitable for the production of organic field effect transistors (OFETs), organic light emitting diodes (OLEDs) or photoelectronic components in which conductive and finely structured electrodes or electrode tracks are required.
  • OFETs organic field effect transistors
  • OLEDs organic light emitting diodes
  • photoelectronic components in which conductive and finely structured electrodes or electrode tracks are required.
  • a conductive layer 2 is formed from a substrate 1, which is formed, for example, from polyethylene, polyimide, but preferably polyterephthalate film Camphorsulfonic acid (CSA) doped polyaniline (PANI), for example by spin coating, applied homogeneously.
  • a thin layer 4 of a positive photoresist is then spin-coated onto this conductive layer 2, for example by spin coating, which is then exposed to UV light through a shadow mask 5.
  • the photoresist is made soluble by a chemical reaction, in particular here made soluble in base.
  • the entire substrate is then immersed in a basic solvent, such as a tetrabutylammonium compound or AZ 1512
  • the substrate can be subsequently placed in an aqueous camphorsulfonic acid (CSA) solution for a short time in order to saturate the surface of the PANI electrodes or electrode tracks with camphorsulfonic acid, which ensures high conductivity.
  • CSA camphorsulfonic acid
  • the non-conductive matrix could also be extracted with dimethylformamide (DMF), which has already been treated with camphorsulfonic acid (CSA).
  • Another possibility is to immerse the substrate in a reactive etching solution after the development of the photoresist layer, so that the exposed areas (3) are removed by oxidation.
  • a reactive etching solution for example, a mixture of 250ml centered sulfuric acid used with an aqueous solution of 7.5g potassium permanganate in 100ml water.
  • a positive photoresist it is of course also possible to use a negative photoresist which is crosslinked in the exposed areas by UV radiation. The unexposed areas remain soluble and can be removed with a suitable solvent. Suitable photoresist systems are described, for example, in Kirk-Othmer (3.) 17, pages 680 to 708.
  • the method according to the invention can thus reliably produce high-resolution conductive structures on substrates which have a long service life.
  • the invention relates to electrodes for organic components, in particular for components such as field effect transistors (0-FETs) and / or light-emitting diodes (OLEDs), which have conductive and finely structured electrode tracks.
  • the electrode / conductor track is produced by simply contacting a conductive or non-conductive layer of organic material with a chemical compound, because the chemical compound deactivates or activates the layer of organic material at the contact point, i.e. makes conductive or non-conductive.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

L'invention concerne des électrodes pour composants organiques, notamment pour composants tels que des transistors à effet de champ (OFET) et/ou des diodes électroluminescentes (OLED), qui comportent des tracés d'électrodes finement structurés, conducteurs et à haute résolution. L'électrode et/ou le tracé conducteur sont obtenus par traitement d'une couche conductrice ou non conductrice de polymère organique de fonction avec un composé chimique, étant donné que le composé chimique désactive ou active la couche de matière organique au point de contact, c.-à-d. qu'il la rend conductrice ou non conductrice. Les zones non conductrices de la couche peuvent être enlevées.
EP01978173A 2000-09-22 2001-09-20 Electrode et trace conducteur pour composants organiques et procede de production correspondant Withdrawn EP1323195A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10047171 2000-09-22
DE10047171A DE10047171A1 (de) 2000-09-22 2000-09-22 Elektrode und/oder Leiterbahn für organische Bauelemente und Herstellungverfahren dazu
DE10122213A DE10122213C1 (de) 2001-05-08 2001-05-08 Verfahren zur Erzeugung von hochaufgelösten leitfähigen Strukturen
DE10122213 2001-05-08
PCT/DE2001/003645 WO2002025750A1 (fr) 2000-09-22 2001-09-20 Electrode et trace conducteur pour composants organiques et procede de production correspondant

Publications (1)

Publication Number Publication Date
EP1323195A1 true EP1323195A1 (fr) 2003-07-02

Family

ID=26007148

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01978173A Withdrawn EP1323195A1 (fr) 2000-09-22 2001-09-20 Electrode et trace conducteur pour composants organiques et procede de production correspondant

Country Status (4)

Country Link
US (1) US20040026121A1 (fr)
EP (1) EP1323195A1 (fr)
JP (1) JP2004512675A (fr)
WO (1) WO2002025750A1 (fr)

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