EP1211762A4 - Circuit de commande d'un laser a semi-conducteur et procede associe - Google Patents

Circuit de commande d'un laser a semi-conducteur et procede associe

Info

Publication number: EP1211762A4
Authority: EP; European Patent Office
Prior art keywords: control circuit; semiconductor laser; laser control; associated method; semiconductor
Prior art date: 1999-08-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP99933257A

Other languages

German (de)

English (en)

Other versions

EP1211762A1 (fr

EP1211762B1 (fr

Inventor

Yuji Tochio

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-08-03

Filing date

1999-08-03

Publication date

2005-09-28

1999-08-03 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

2002-06-05 Publication of EP1211762A1 publication Critical patent/EP1211762A1/fr

2005-09-28 Publication of EP1211762A4 publication Critical patent/EP1211762A4/fr

2010-10-06 Application granted granted Critical

2010-10-06 Publication of EP1211762B1 publication Critical patent/EP1211762B1/fr

2019-08-03 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Optical Communication System (AREA)
Semiconductor Lasers (AREA)

EP99933257A 1999-08-03 1999-08-03 Circuit de commande d'un laser a semi-conducteur et procede associe Expired - Lifetime EP1211762B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PCT/JP1999/004190 WO2001011740A1 (fr)	1999-08-03	1999-08-03	Circuit de commande d'un laser a semi-conducteur et procede associe

Publications (3)

Publication Number	Publication Date
EP1211762A1 EP1211762A1 (fr)	2002-06-05
EP1211762A4 true EP1211762A4 (fr)	2005-09-28
EP1211762B1 EP1211762B1 (fr)	2010-10-06

Family

ID=14236384

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP99933257A Expired - Lifetime EP1211762B1 (fr)	1999-08-03	1999-08-03	Circuit de commande d'un laser a semi-conducteur et procede associe

Country Status (5)

Country	Link
US (1)	US7158551B2 (fr)
EP (1)	EP1211762B1 (fr)
JP (1)	JP4557481B2 (fr)
DE (1)	DE69942843D1 (fr)
WO (1)	WO2001011740A1 (fr)

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US7614074B2 (en) *	2001-04-23	2009-11-03	Scientific-Atlanta, Inc.	Burst-mode digital transmitter
US6509994B2 (en) *	2001-04-23	2003-01-21	Scientific-Atlanta, Inc.	Burst-mode analog transmitter
JP4698086B2 (ja) *	2001-08-09	2011-06-08	株式会社リコー	半導体レーザ駆動回路及び画像形成装置
JP3880914B2 (ja) *	2002-10-31	2007-02-14	株式会社リコー	半導体レーザ駆動装置、半導体レーザ駆動方法及び半導体レーザ駆動装置を使用した画像形成装置
US6946720B2 (en) *	2003-02-13	2005-09-20	Intersil Americas Inc.	Bipolar transistor for an integrated circuit having variable value emitter ballast resistors
US7599629B2 (en) *	2003-06-06	2009-10-06	Scientific-Atlanta, Inc.	Optical receiver having an open loop automatic gain control circuit
US20050069002A1 (en) *	2003-09-25	2005-03-31	Hisashi Senga	Laser driving device
TWI220809B (en) *	2003-10-02	2004-09-01	Asia Optical Co Inc	Laser driver circuit for burst mode transmission
CA2547902A1 (fr) *	2003-12-19	2005-07-21	Speechgear, Inc.	Affichage de donnees visuelles en fonction de la position du dispositif d'affichage
US20050191059A1 (en) *	2004-01-12	2005-09-01	Clariphy	Use of low-speed components in high-speed optical fiber transceivers
TWI228850B (en) *	2004-01-14	2005-03-01	Asia Optical Co Inc	Laser driver circuit for burst mode and making method thereof
US7505692B2 (en) *	2004-08-31	2009-03-17	Cisco Technology, Inc.	System and method for optical transmission
US20080106493A1 (en) *	2006-11-03	2008-05-08	Motorola, Inc.	Laser display having reduced power consumption and method of operating the same
US20080220731A1 (en) *	2007-03-08	2008-09-11	West Lamar E	Reverse path optical link using frequency modulation
US8270834B2 (en) *	2007-06-13	2012-09-18	West Jr Lamar E	Frequency modulated burst mode optical system
US20080310846A1 (en) *	2007-06-13	2008-12-18	West Jr Lamar E	Frequency modulated burst mode transmitter
JP4931785B2 (ja) *	2007-12-10	2012-05-16	三菱電機株式会社	バースト光送信器
EP2189806B1 (fr) *	2008-11-20	2011-05-18	Sick Ag	Capteur optoélectronique
US8666260B2 (en) *	2009-06-02	2014-03-04	General Instrument Corporation	Burst mode laser transmitter having an extremely fast response time when triggered from a totally off state
US8463137B2 (en) *	2010-09-27	2013-06-11	Titan Photonics, Inc.	System and method for transmissions via RF over glass
US9239457B2 (en) *	2011-07-15	2016-01-19	Pixtronix, Inc.	Circuits for controlling display apparatus
WO2014105653A2 (fr) *	2012-12-31	2014-07-03	Nlight Photonics Corporation	Courant de polarisation pulsé pour des lasers à semi-conducteur commutés en gain en vue d'une réduction d'émission spontanée amplifiée
JP6303329B2 (ja) *	2013-08-21	2018-04-04	株式会社島津製作所	光デバイス駆動回路
US8812320B1 (en)	2014-04-01	2014-08-19	Google Inc.	Segment-based speaker verification using dynamically generated phrases
JP6547942B2 (ja)	2015-03-05	2019-07-24	株式会社リコー	半導体レーザ駆動装置、光走査装置、物体検出装置及び移動体装置
EP3297105B1 (fr) *	2016-09-16	2021-05-12	STMicroelectronics (Research & Development) Limited	Circuit d'excitation pour une diode laser
US10103513B1 (en) *	2017-06-23	2018-10-16	Google Llc	Common cathode laser driving circuit
WO2019226338A1 (fr) *	2018-05-21	2019-11-28	Google Llc	Circuit de commutation pour laser accordable en mode rafale
US11600965B2 (en) *	2018-05-21	2023-03-07	Google Llc	Burst mode laser driving circuit
CN112166535B (zh) *	2018-05-21	2024-01-16	谷歌有限责任公司	用于突发模式可调谐eml传送器的波长漂移抑制
US20210119421A1 (en) *	2019-10-16	2021-04-22	Panasonic intellectual property Management co., Ltd	Cold-start acceleration for wavelength-beam-combining laser resonators
US20230411927A1 (en) *	2022-06-15	2023-12-21	Ii-Vi Delaware, Inc.	Edge rate (rise and fall time) controlled segmented laser driver

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Publication number	Priority date	Publication date	Assignee	Title
JPS61131631A (ja) *	1984-11-30	1986-06-19	Toshiba Corp	光信号発生装置
JPH04281633A (ja) *	1991-03-11	1992-10-07	Toshiba Corp	バースト型光通信回路
JPH0983050A (ja) *	1995-09-13	1997-03-28	Fujitsu Ltd	半導体レーザの駆動方法、半導体レーザの駆動回路及び外部変調器
JPH10284791A (ja) *	1997-04-11	1998-10-23	Nec Corp	温度補償回路付レーザダイオード駆動回路
JPH1117625A (ja) *	1997-06-26	1999-01-22	Hitachi Ltd	発光素子駆動回路およびそれを用いた光送信器

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DE2847182C3 (de) *	1978-10-30	1986-07-10	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Verfahren zur Modulationsstromregelung von Laserdioden
US4339822A (en) *	1979-08-08	1982-07-13	Optical Information Systems, Inc.	Diode laser digital modulator
US4558465A (en) *	1983-09-19	1985-12-10	Rca Corporation	Switched bias scheme for high speed laser transmitter
JPS6180922A (ja)	1984-09-28	1986-04-24	Matsushita Electric Ind Co Ltd	半導体レ−ザ駆動装置
JP3840794B2 (ja) *	1998-04-13	2006-11-01	富士ゼロックス株式会社	レーザ駆動装置

1999
- 1999-08-03 DE DE69942843T patent/DE69942843D1/de not_active Expired - Lifetime
- 1999-08-03 JP JP2001516292A patent/JP4557481B2/ja not_active Expired - Fee Related
- 1999-08-03 WO PCT/JP1999/004190 patent/WO2001011740A1/fr not_active Ceased
- 1999-08-03 EP EP99933257A patent/EP1211762B1/fr not_active Expired - Lifetime
2001
- 2001-12-17 US US10/015,616 patent/US7158551B2/en not_active Expired - Fee Related

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61131631A (ja) *	1984-11-30	1986-06-19	Toshiba Corp	光信号発生装置
JPH04281633A (ja) *	1991-03-11	1992-10-07	Toshiba Corp	バースト型光通信回路
JPH0983050A (ja) *	1995-09-13	1997-03-28	Fujitsu Ltd	半導体レーザの駆動方法、半導体レーザの駆動回路及び外部変調器
JPH10284791A (ja) *	1997-04-11	1998-10-23	Nec Corp	温度補償回路付レーザダイオード駆動回路
JPH1117625A (ja) *	1997-06-26	1999-01-22	Hitachi Ltd	発光素子駆動回路およびそれを用いた光送信器

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 325 (E - 451) 6 November 1986 (1986-11-06) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 085 (E - 1322) 19 February 1993 (1993-02-19) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 07 31 July 1997 (1997-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 01 29 January 1999 (1999-01-29) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 04 30 April 1999 (1999-04-30) *

Also Published As

Publication number	Publication date
US20020075919A1 (en)	2002-06-20
EP1211762A1 (fr)	2002-06-05
US7158551B2 (en)	2007-01-02
JP4557481B2 (ja)	2010-10-06
DE69942843D1 (de)	2010-11-18
WO2001011740A1 (fr)	2001-02-15
EP1211762B1 (fr)	2010-10-06

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EP1211762A4 (fr)	2005-09-28	Circuit de commande d'un laser a semi-conducteur et procede associe
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Legal Events

Date	Code	Title	Description
2002-04-19	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2002-06-05	17P	Request for examination filed	Effective date: 20020131
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2004-05-12	RBV	Designated contracting states (corrected)	Designated state(s): DE FR GB
2005-09-28	A4	Supplementary search report drawn up and despatched	Effective date: 20050812
2005-09-28	RIC1	Information provided on ipc code assigned before grant	Ipc: 7H 01S 5/042 B Ipc: 7H 01S 3/00 A
2007-05-02	17Q	First examination report despatched	Effective date: 20051111
2010-03-31	RIC1	Information provided on ipc code assigned before grant	Ipc: H01S 5/042 20060101AFI20100222BHEP
2010-04-14	GRAP	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOSNIGR1
2010-05-19	RIC1	Information provided on ipc code assigned before grant	Ipc: H01S 5/042 20060101AFI20100414BHEP
2010-05-19	RIN1	Information on inventor provided before grant (corrected)	Inventor name: TOCHIO, YUJI, C/O FUJITSU LIMITED
2010-08-24	GRAS	Grant fee paid	Free format text: ORIGINAL CODE: EPIDOSNIGR3
2010-09-03	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
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