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EP1200995A1 - Cellule solaire souple a couche mince - Google Patents

Cellule solaire souple a couche mince

Info

Publication number
EP1200995A1
EP1200995A1 EP00940105A EP00940105A EP1200995A1 EP 1200995 A1 EP1200995 A1 EP 1200995A1 EP 00940105 A EP00940105 A EP 00940105A EP 00940105 A EP00940105 A EP 00940105A EP 1200995 A1 EP1200995 A1 EP 1200995A1
Authority
EP
European Patent Office
Prior art keywords
layer
solar cell
substrate
intermediate layer
flexible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00940105A
Other languages
German (de)
English (en)
Inventor
Ayodhya N. Tiwari
Martin Krejci
Franz Josef Haug
Hans Zogg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eidgenoessische Technische Hochschule Zurich ETHZ
Original Assignee
Eidgenoessische Technische Hochschule Zurich ETHZ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eidgenoessische Technische Hochschule Zurich ETHZ filed Critical Eidgenoessische Technische Hochschule Zurich ETHZ
Publication of EP1200995A1 publication Critical patent/EP1200995A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing solar cells and a solar cell that consists of only thin layers and is flexible, according to patent claims 1 and 8.
  • the object of the present invention is to provide a method for producing solar cells, in which a dissolvable intermediate layer allows the solar cell to be separated from a rigid support.
  • Another task is to propose a solar cell that consists only of thin layers and is flexible.
  • Fig. 2a layer stack of a second version before detaching from the substrate
  • Fig. 1 shows a layer stack before detachment from the rigid substrate on the basis of which the method is described.
  • a soluble intermediate layer 6 is applied, for example by vacuum evaporation, to a rigid substrate 7, which consists, for example, of glass, ceramic or metal.
  • This soluble intermediate layer a so-called “sacrificial layer”, consists for example of table salt (NaCl) or BaF 2 , both substances are soluble in water. Water is therefore used as a solvent in the manufacturing process at the appropriate time.
  • the carrier layer 5 is now applied to the substrate 7 covered with the soluble intermediate layer 6, for example a metal layer deposited by vacuum deposition, or a polymer layer spun on for example, such as a temperature-resistant plastic commercially available under the brand name "Kapton".
  • the further process steps are based on the example.
  • CIGS Culn x Ga y Se z with x, y, z> 0
  • the description can also be used for other cell types such as CdTe.
  • the further steps essentially correspond to the already known methods (HW Schock and A. Shah, "Status and prospects of photovoltaic thin film technologies", Proc. 14 th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 1997, HS Stephens & Associates, UK, 1997, pp. 2000-2005):
  • the back contact (4) is deposited on the carrier layer (5), this consists, for example, of sputtered Mo.
  • the absorber layer ( 1) applied with a thickness of a few micrometers here the known techniques can be used to obtain the highest possible efficiency of the finished cell by, for example, grading the layer composition.
  • the temperature of the sample during the deposition is, for example, 400 ° C. At this temperature, a suitable plastic carrier layer as described above remains intact, but cells with high efficiencies can still be obtained. Also in this step, some Na can be added in a suitable form and / or compound, since it is known that adding Na has a positive effect on the properties of the finished cell.
  • the window layer (2) which consists, for example, of ZnO, CdS or ZnSe, and the front contact (3) of, for example, ITO (indium tin oxide), further differentiations such as CdS deposition depending on the method selected, or doping the upper part of the window layer, so that it also functions as a front contact part, makes sense.
  • the window layer (2) which consists, for example, of ZnO, CdS or ZnSe
  • the front contact (3) of, for example, ITO (indium tin oxide)
  • CdS deposition depending on the method selected, or doping the upper part of the window layer, so that it also functions as a front contact part, makes sense.
  • individual solar cells are structured by means of, for example, scratching or photolithography and, if necessary, antireflection and mechanical protective layers (for example an optically transparent UV-resistant additional polymer layer) are applied.
  • the intermediate layer 6 can typically now be dissolved, as a result of which the substrate 7 is separated from the carrier layer 5 and the layer package 10 applied thereon.
  • the carrier layer 5 and the layer package 10 form the now flexible solar cell.
  • the intermediate layer 6 consists, for example, of NaCl or BaF 2 , water can be used as the solvent.
  • Other solvents can be used for non-water-soluble intermediate layers or for other reasons.
  • a CIGS solar cell with 12.8% efficiency was obtained on a polyimide substrate.
  • the layer thickness of the spun NEN polyimides was approx. 20 ⁇ m, the thickness of the layers essential for the electro-optical functioning of the solar cell was less than approx. 4 ⁇ m.
  • the whole structure is flexible and can be used for the applications already described.
  • the rigid substrate 7 can be reused after the layer structure 11 has been detached.
  • the solar cell according to the invention It is therefore essential to the solar cell according to the invention that it is formed on a rigid substrate during a large part of the production steps, is subsequently detached from it and is then flexible, however. It can be used in a flexible state, but can also be reconnected to another solid substrate.
  • the entire solar cell structure remains flexible. This e.g. to bypass the relatively expensive glass substrate, to mount the solar cells on curved surfaces such as facades, bricks or curved housings of electronic consumer devices, or just to save weight, which is particularly important for space applications.
  • a large, flexible structure can also be easily rolled for transport.
  • Flexible solar cells are also interesting for small-area applications, e.g. as an energy source for pocket calculators or "smart cards", which can contain integrated electrical circuits and displays, but must meet certain flexibility requirements.
  • 2a and 2b show a variation of the manufacturing method according to the invention.
  • 2a shows a second layer stack before detachment from the substrate.
  • the intermediate layer 6 is applied to the substrate 7 for the production.
  • the carrier layer 5 is dispensed with at the current time of manufacture, but the other layers 1 - 4 of the solar cell structure are deposited directly, e.g.
  • back contact 4 for example Mo
  • CIGS 1 which may be provided with a little Na, window layer 2 and front contact 3.
  • the transparent polymer 5 is then applied as a carrier film, and the entire structure 11 is removed by dissolving the intermediate layer 6 rigid substrate 7 solved.
  • the deposition temperature can also be higher than 400 ° C., since the polymer layer is only applied subsequently; a plastic with less good temperature resistance can also be used instead of the polymer.
  • FIG. 2b shows a second layer stack in the finished state.
  • a further variant is to carefully detach the layer package from the rigid carrier before applying the upper polyimide layer, and only subsequently to apply this to one apply transparent film, possibly using a transport intermediate substrate.
  • a further protective film which can also serve for mechanical stability, can then be stuck on or in some other way applied to the underside, ie to the back contact layer.
  • the flexible composite can also be connected to a rigid substrate for certain applications.
  • glass substrates in "substrate structure" are used for conventional CIGS cells.
  • two glass panes are required, namely a second glass pane, which serves for the mechanical and chemical protection of the solar cell layers and through which the light is incident.
  • the lower pane of glass is superfluous, so a pane can be saved; such an arrangement makes sense in such a rough or corrosive environment in which light-transparent plastic covers offer insufficient protection.
  • the two methods described above correspond to the "substrate structure” described in the literature, i.e. the glass layer used as a substrate in the conventional rigid cells is not traversed by the light.
  • the light falls through the glass substrate; in the conventional manufacturing sequence, the transparent front contact is therefore deposited on the glass substrate, followed by the window layer and the other layers.
  • this configuration is mainly used for CdTe thin-film cells on glass substrates.
  • the present invention can also be used for the "Superstrat configuration”.
  • Figure 3 shows a layer stack for a "superstrate configuration" prior to detachment from the rigid substrate.
  • the substrate 7, the intermediate layer 6 and the carrier layer 5 are followed here by a transparent front contact 3, a window layer 2, an absorber layer 1 and a back contact 4.
  • the production steps are carried out analogously.
  • a large class of materials can be used as an intermediate layer.
  • Many alkali halides including NaCl, NaF, KCI, are suitable and also slightly water-soluble, the same applies to Ila fluorides such as BaF 2 .
  • Other suitable materials are all those that are sufficiently temperature-resistant and for which there is a solvent that can be used in the environment in question without endangering the functions of the layer structure.
  • the Mo layer on polyimide can be used as a contact layer
  • the NaCl intermediate layer does not prevent adhesion or further production
  • the special one spun polyimide layer withstands the temperatures during manufacture and maintains its necessary mechanical and optical properties.
  • the layers used to form the actual solar cell can also include different classes of materials. These include polycrystalline compound semiconductors such as CuInGaSeS. This notation means Culn y Ga 2 Se w S u , where the parameters y, z, w and u can have any non-negative values, but as is known, for optimal cells the values are limited to specific smaller areas.
  • This family of materials thus comprises compound semiconductor layers from the l-III-V system of the chemical periodic system, in particular they belong (the parameters y, z, w, and u are no longer described below) CulnSe, CuInGaSe, CuGaSe, CulnS, CuInGaSSe, others Materials can also be used.
  • CdTe From the ll-VI family of the chemical periodic system, CdTe as well as other compounds can be used.
  • Compounds from the III-V family of the chemical periodic system such as e.g. GaAs or Group IV semiconductors of the chemical periodic system such as Si or Ge can be used.
  • the structure of the layers can be polycrystalline, microcrystalline, nanocrystalline, micromorphic or amorphous, as the names given in the specialist literature for different structures of thin layers are called. his.
  • the layer sequence thus contains at least one absorber layer and one window layer as well as contact layers, several such layer sequences can be deposited on one another. If two such sequences are used, a "tandem cell" is created, for example, where the light first passes through a solar cell structure with a larger band gap, then a cell structure with a smaller band gap, with this arrangement the yield can be increased. Structures with more than two such layer sequences for the formation of triple cells, or multiple cells with even more such single solar cells are also possible.
  • the partially transparent electrical contact 3 is e.g. from the semiconductor ⁇ dium-tin-oxide (1TO) or ZnO or combinations of such layers, the back contact 4 can consist of a metal or semiconductor or both, as is known.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Procédé de fabrication d'une cellule solaire souple à couche mince, qui consiste à appliquer une couche intermédiaire (6), à savoir une couche sacrificielle, par exemple NaCl, sur un substrat rigide (7), puis à déposer une couche de support (5), par exemple un polyimide. Les couches suivantes, par exemple Mo (4), un absorbeur CulnxGaySzSeu (1), x, y, z, u étant supérieurs ou égaux à 0, une couche fenêtre CdS-ZnO (2) et une couche de contact frontale transparente (3), sont déposées, la structuration des cellules est achevée et lesdites cellules sont éventuellement dotées d'une couche de revêtement. La structure de cellule solaire est séparée du substrat rigide (7) par dissolution de la couche sacrificielle, la cellule solaire qui en résulte devenant souple. La présente invention concerne des cellules solaires souples fabriquées selon ce procédé, qui présentent des épaisseurs typiques de 25 νm, pour une efficacité d'environ 13 %. Des cellules solaires de grandes dimensions de ce type peuvent être utilisées pour la production d'énergie sur terre et dans l'espace, et des cellules de petites dimensions peuvent être utilisées pour alimenter des appareils électroniques, comme par exemple des calculatrices de poche et des cartes intelligentes.
EP00940105A 1999-07-13 2000-07-12 Cellule solaire souple a couche mince Withdrawn EP1200995A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH128799 1999-07-13
CH128799 1999-07-13
PCT/CH2000/000379 WO2001004964A1 (fr) 1999-07-13 2000-07-12 Cellule solaire souple a couche mince

Publications (1)

Publication Number Publication Date
EP1200995A1 true EP1200995A1 (fr) 2002-05-02

Family

ID=4206906

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00940105A Withdrawn EP1200995A1 (fr) 1999-07-13 2000-07-12 Cellule solaire souple a couche mince

Country Status (4)

Country Link
EP (1) EP1200995A1 (fr)
JP (1) JP2003504877A (fr)
AU (1) AU5518100A (fr)
WO (1) WO2001004964A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10127255A1 (de) * 2001-06-05 2003-01-16 Univ Stuttgart Konditionierung von Glasoberflächen für den Transfer von CIGS-Solarzellen auf flexible Kunstoffsubstrate
DE10247735B3 (de) * 2002-10-09 2004-04-15 Hahn-Meitner-Institut Berlin Gmbh Schichtanordnung aus heteroverbundenen Halbleiterschichten mit zumindest einer zwischengelagerten Trennschicht und Verfahren zu ihrer Herstellung, sowie ein Verfahren zur Herstellung einer Solarzelle
DE10259472B4 (de) * 2002-12-19 2006-04-20 Solarion Gmbh Flexible Dünnschichtsolarzelle mit flexibler Schutzschicht
JP4739772B2 (ja) * 2004-02-17 2011-08-03 シチズンホールディングス株式会社 光電変換装置の製造方法
DE102006017549A1 (de) * 2006-04-13 2007-10-18 Imi Intelligent Medical Implants Ag Verfahren zur Herstellung von Implantatstrukturen zur Kontaktierung oder Elektrostimulation von lebenden Gewebezellen oder Nerven
JP5576273B2 (ja) 2007-07-03 2014-08-20 マイクロリンク デバイセズ インコーポレイテッド Ｉｉｉ−ｖ化合物薄膜太陽電池の加工方法
JP5352824B2 (ja) * 2007-07-20 2013-11-27 独立行政法人 宇宙航空研究開発機構 太陽電池の製造方法
DE102008049374A1 (de) 2008-09-27 2010-04-01 JODLAUK, Jörg Halbleiterfaserstrukturen als Energieerzeuger
CN103208561B (zh) * 2013-03-22 2016-04-20 中国科学院上海高等研究院 一种柔性薄膜太阳能电池及其制备方法
CN103400896A (zh) * 2013-07-24 2013-11-20 中国科学院上海高等研究院 一种铜铟镓硒柔性薄膜太阳能电池及其制备方法
CN113782676B (zh) * 2021-09-03 2024-07-23 北京化工大学 一种柔性单组分有机太阳能电池及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7005674A (en) * 1974-03-01 1975-12-18 Univ Delaware Photovoltaic cell
JPS63107073A (ja) * 1986-06-26 1988-05-12 Matsushita Electric Ind Co Ltd 薄膜太陽電池の製造法
JP2680582B2 (ja) * 1987-10-19 1997-11-19 三洋電機株式会社 光起電力装置の製造方法
JP2783918B2 (ja) * 1991-03-28 1998-08-06 三洋電機株式会社 光起電力装置の製造方法
DE69738307T2 (de) * 1996-12-27 2008-10-02 Canon K.K. Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0104964A1 *

Also Published As

Publication number Publication date
AU5518100A (en) 2001-01-30
WO2001004964A1 (fr) 2001-01-18
JP2003504877A (ja) 2003-02-04

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