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EP1101245A2 - Procede et dispositif pour le nettoyage de substrats - Google Patents

Procede et dispositif pour le nettoyage de substrats

Info

Publication number
EP1101245A2
EP1101245A2 EP99934565A EP99934565A EP1101245A2 EP 1101245 A2 EP1101245 A2 EP 1101245A2 EP 99934565 A EP99934565 A EP 99934565A EP 99934565 A EP99934565 A EP 99934565A EP 1101245 A2 EP1101245 A2 EP 1101245A2
Authority
EP
European Patent Office
Prior art keywords
substrates
cleaning
cleaning device
batch
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99934565A
Other languages
German (de)
English (en)
Inventor
Uwe Müller
David Henson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Steag Microtech GmbH
Original Assignee
Steag Electronic Systems AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag Electronic Systems AG filed Critical Steag Electronic Systems AG
Publication of EP1101245A2 publication Critical patent/EP1101245A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes

Definitions

  • the present invention relates to a method and a device for cleaning substrates, in which or in which the substrates are each individually wet-cleaned in at least one coarse cleaning device.
  • semiconductor wafers are different process steps, such as. B exposed to coating, masking, etching, doping, polishing, etc. In between, it may be necessary to clean the substrates. In particular after a polishing step, it is necessary to clean the polished substrates, since abrasion particles of the substrates and polishing liquid usually adhere to them.
  • the substrates are transported from the polishing device to a brush cleaning system, as described, for example, in EP-A-0 412 796, JP-A-7 066 161, US-A-5 547 515 or JP-A-1 289 122 are known.
  • a brush cleaning system as described, for example, in EP-A-0 412 796, JP-A-7 066 161, US-A-5 547 515 or JP-A-1 289 122 are known.
  • the substrates are cleaned individually by means of rotating brushes and a cleaning liquid.
  • the substrates are then typically dried and collected as a batch, as described, for example, in US Pat. No. 5,547,515.
  • the dried and collected substrates are later used in a fine cleaning device, as described, for example, in DE-A-44 13 077, DE-A-195 46 990 or DE-A-196 37 875 of the same applicant are used.
  • this fine cleaning device the substrates in a batch are combined sam immersed in a treatment liquid and finally cleaned in it, for example, by generating a flow in a treatment tank. Subsequently, the substrates are moved out of the fine cleaning device and dried, the drying being carried out by slowly lifting the substrates out of the treatment liquid. The drying process is accelerated by a fluid introduced above the treatment liquid in accordance with the "Marangoni effect" described in EP-A-0 385 536.
  • drying of the respective substrates is necessary between the individual cleaning of the substrates in the brush cleaning systems and the batch-wise cleaning in the fine cleaning device.
  • B. by spinning or heat treatment of the wafers. This drying is necessary because the treatment liquid used in brush cleaning would otherwise adhere to the wafer and create streaks, which would result in a subsequent one
  • the dried wafers must then be temporarily stored and collected in order to be used as a batch in the fine cleaning device.
  • the drying step between brush cleaning and fine cleaning is complex and involves the risk of damage to the wafer by spinning or heat treatment.
  • the present invention is therefore based on the object of providing a simplified and improved method and an improved and simplified device for cleaning substrates, with which the treatment of the substrates is accelerated and thus the productivity is increased.
  • the object is achieved in a method of the type mentioned at the outset in that, after the pre-cleaning, the substrates are transported in the wet state into a collecting basin filled with treatment fluid, the substrates are collected in the collecting basin, and the substrates upon reaching a certain one Number in the collecting basin together as a batch in the wet state in a fine cleaning device, the substrates in the fine cleaning device are wet cleaned, and the batch is subsequently dried.
  • the substrate is preferably pre-cleaned with a rotating brush and a treatment liquid.
  • the substrate is rotated during the same for a uniform pre-cleaning.
  • the substrate is sonicated according to a preferred embodiment with ultrasonic waves or with megasonic.
  • the substrate is pre-cleaned in two different coarse cleaning devices and transported in the wet state from a first coarse cleaning device to a second coarse cleaning device. The use of two coarse cleaning devices increases the pre-cleaning effect.
  • the substrates are held in an essentially the same, vertical orientation during the method steps, whereby in particular a transport device for the substrates can be simplified since this does not have to rotate the substrates between the different cleaning steps.
  • the substrates are completely immersed in a cleaning and / or rinsing liquid and washed around with it.
  • the substrates are preferably sonicated with ultrasound waves to increase the cleaning effect.
  • the substrates are moved out of the cleaning and / or rinsing liquid for drying and are introduced into a dry transfer hood and locked therein.
  • a fluid is preferably introduced into the drying area via the dry transfer hood before and / or while the substrates are being moved out of the cleaning and / or rinsing liquid.
  • the introduced fluid is preferably a gas mixture of nitrogen and isopropyl alcohol which reduces the surface tension of the cleaning and / or rinsing liquid and thereby causes the cleaning and / or rinsing liquid to flow better when the substrates are moved out.
  • a device for wet cleaning of substrates which has at least one single-substrate coarse cleaning device with a liquid supply and a treatment container, in that at least one collecting tank that can be filled with treatment fluid for receiving several substrates, a batch fine cleaning device with a fluid container and at least one transport device for wet transport of the substrates between the single substrate coarse cleaning device and the collecting basin on the one hand and the collecting basin and the batch fine cleaning device on the other hand is provided.
  • substrates are temporarily stored in the collecting basin before they can be transported in batches to a fine cleaning device. Due to the intermediate storage in a treatment fluid, there is no danger that the liquid adhering to the substrates after the rough cleaning will dry and form streaks. This means that the previously required drying step between a single coarse cleaning and a batch fine cleaning with the risk of damaging the substrates can also be omitted. In addition, the treatment speed and thus the efficiency of the device is increased.
  • the single substrate coarse cleaning device has at least one rotatable brush.
  • the single substrate coarse cleaning device has at least one rotatable pressure roller in order to rotate the substrate during the coarse cleaning and thereby to obtain a uniform cleaning effect.
  • the single-substrate coarse cleaning device has at least one ultrasonic transmitter.
  • the single-substrate coarse cleaning device has two treatment tanks, each with at least one liquid supply and at least one brush. In this way, a two-stage and better pre-cleaning of the substrates can be achieved.
  • the single substrate coarse cleaning device, the collecting basin, the batch fine cleaning device and the transport device each have holding means in order to hold the substrates in an essentially identical, preferably vertical, orientation. This in particular simplifies the transport device since it does not have to rotate the substrate into another orientation during transport.
  • the substrates are advantageously held essentially vertically in order to achieve compatibility with known batch fine cleaning devices.
  • the batch fine cleaning device preferably has at least one inlet for cleaning and / or rinsing liquid, as well as at least one ultrasonic transmitter, in order to achieve a good final cleaning effect.
  • the batch fine cleaning device In order to facilitate the introduction and removal of the substrates in or from the batch fine cleaning device, it has a lifting and lowering device for the substrates.
  • the transport device has a dry transport hood with holding means for the substrates.
  • the holding means in the dry transport hood enable the substrates to be used alone, ie without a speaking substrate carrier can be picked up and transported, which reduces the risk of contamination of the substrates by a substrate carrier.
  • the dry transport hood has means for introducing a fluid into a drying area located above a surface of said liquid.
  • the transport device preferably has a wet transport hood for transporting a batch of substrates from a collecting basin to the batch fine cleaning device.
  • a wet transport hood next to the dry transport hood ensures that the dry transport hood is always dry and thus does not contaminate the substrates that have been taken up.
  • the single-substrate coarse cleaning devices, the receiving and collecting basin and the batch fine cleaning device are arranged in a row. This also simplifies the transport device since it only has to perform linear movements.
  • the device has an input area with a receptacle and an input basin which can be filled with liquid.
  • the input area with a receptacle has the advantage that an external dealer can deliver substrates to the device without precise coordination with the individual substrate coarse cleaning devices.
  • the inlet basin, which can be filled with liquid, may prevent liquids adhering to the substrates from drying out before rough cleaning.
  • the single substrate coarse cleaning device, the collecting tank, the batch fine cleaning device, the input area and the entrance basin are arranged in a row.
  • FIG. 1 is a perspective view of a cleaning device for substrates according to the present invention
  • FIG. 2 shows a top view of the cleaning device according to FIG. 1; 3 a and b a longitudinal sectional view through a first module of the cleaning device according to. Fig. 1 and a cross-sectional view through a
  • Fig. 4 is a schematic sectional view of a fine cleaning device.
  • Figures 1 and 2 show the cleaning device 1 according to the invention, which is essentially composed of two modules 2 and 3 and a transport device 4 serving the two modules.
  • the first module 2 forms an input and pre-cleaning station, while the second module 3 forms a collection, fine cleaning and output station.
  • the module 2 has a wafer input area 5 with a receiving and holding element 7 for a wafer 8.
  • the receiving and holding element 7 is arranged in such a way that the wafer 8 is held in a vertical position.
  • the wafer 8 is removed from a polishing station via an external dealer (not shown), possibly rotated into the vertical position, and inserted into the holding and holding device 7.
  • a receiving basin 9 Adjacent to the receiving area 5 is a receiving basin 9, which is filled with a fluid such as DI water, and a plurality of wafers such as e.g. B. can accommodate 5 wafers.
  • a fluid such as DI water
  • a plurality of wafers such as e.g. B. can accommodate 5 wafers.
  • the module 2 also has first and second brush cleaning devices 10 and 11, which are arranged adjacent to the side of the receiving area 5 opposite the receiving basin 9.
  • the first brush cleaning device 10 has a cover 14 and a treatment basin 15 with an overflow, which is filled with a treatment liquid 16 from below.
  • a wafer receiving element 17 is arranged in the form of a 3-point support such that it holds a wafer 8 inserted into the basin 15 so that it is half-immersed in the treatment liquid 16 and held vertically.
  • the brush cleaning device 10 also has two brush rollers 20, 21, which are each arranged on opposite sides of a wafer inserted into the basin 15, and two pressure rollers 22, 24, which bear against the edge of the wafer 8 during cleaning, in order to do this rotate.
  • the brush rollers 20, 21 extend in the longitudinal direction of the basin 15 and are arranged above the basin 15 such that they extend at least partially into the treatment liquid 16 in the basin 15.
  • the brush rollers 20, 21 are rotatable for cleaning a wafer 8 inserted into the basin 15.
  • the brush rollers have a fluid channel in their interior, via which treatment fluid is guided from the inside to the outside of the brush rollers.
  • At least one ultrasonic transmitter is also provided in the first brush cleaning device 10 in order to sonicate the wafer with ultrasonic waves for better cleaning.
  • the second brush cleaning device 11 is constructed essentially the same as the first brush basin, but without an ultrasonic transmitter.
  • the input area 5, the storage and collection basin 8, and the brush basin 10 and 11 are arranged in a row in the module 2.
  • the module 3 connects laterally directly to the module 2, specifically adjacent to the second brush cleaning device 11. Adjacent to the brush cleaning device 11, the module 3 has a storage and collection basin 30 which is used to hold a larger number of semiconductor wafers 8, such as B. 25 semiconductor wafers is suitable.
  • the collecting basin 30 has a receiving device (not shown in detail) and a lifting and / or lowering device for the semiconductor wafers 8.
  • the collection basin 30 is filled with a treatment fluid, such as. B. di-water, filled so that the received in the collecting container 30 semiconductor wafer 8 are completely immersed in the fluid.
  • the pool 30 may be an overflow pool, although this is not shown.
  • a fine cleaning device 35 which can best be seen in FIG. 4, is provided adjacent to the collecting basin 30.
  • the fine cleaning device 35 has a treatment basin 36, which can optionally be used simultaneously and / or alternately with a treatment fluid, such as, for example, B. an etching liquid, a chemical cleaning liquid and / or a rinsing liquid. Furthermore, a lifting and lowering device 37 in the form of a knife for the semiconductor wafer 8 is provided in the basin.
  • a treatment fluid such as, for example, B. an etching liquid, a chemical cleaning liquid and / or a rinsing liquid.
  • a lifting and lowering device 37 in the form of a knife for the semiconductor wafer 8 is provided in the basin.
  • the fine cleaning device 35 also has at least one ultrasound transmitter (not shown) in order to sonicate the wafers located in the treatment basin 36 and the treatment fluid with ultrasound waves.
  • at least one ultrasound transmitter (not shown) in order to sonicate the wafers located in the treatment basin 36 and the treatment fluid with ultrasound waves.
  • inlet nozzles 38 for the treatment fluid and an outlet 39 in the form of a quick dump valve, via which the treatment fluid is drained off.
  • An output station 40 is provided adjacent to the fine cleaning device 35, on which the cleaned and dried wafers are placed and from which they are transported away.
  • the transport device 4 operating the two modules 2 and 3 has a first horizontally and vertically movable dealer 50 for transporting the wafers 8 from
  • the dealer 50 has, in a known manner, a gripping device 51 for the wafer 8, which is designed as a so-called edge gripper.
  • the gripping device is connected to the first vertical strut 55 of the transport device 4 by means of connecting elements 52 spaced apart and vertically movable.
  • the vertical strut 55 is in turn horizontally movable attached to horizontal struts 56, 57 of the transport device 4. The vertical movement of the gripping device thus takes place along the Strut 55, while the horizontal movement takes place by moving the strut 55 along the struts 56, 57.
  • the transport device 4 also has a second dealer 60, which is essentially the same as the first dealer 50, and which in turn can be moved vertically and horizontally along vertical and horizontal struts.
  • the dealer 60 serves to transport the individual wafers 8 from the first brush cleaning device 10 into the second brush cleaning device 11 and from the second brush cleaning device 11 into the storage and collection basin 30 of the second module 3.
  • the transport device 4 also has a wet transfer hood 65 for transporting a batch of wafers from the collecting basin 30 into the fine cleaning device 35.
  • a wet transfer hood 65 is known, for example, from DE-A-196 52 526 by the same applicant, which is made the subject of the present disclosure in order to avoid repetitions.
  • the transport device 4 also has a dry transfer hood 70, which is described for example in DE-A-196 52 526 by the same applicant. In order to avoid repetition, the content of the pre-registration is made the subject of the present application.
  • the dry transfer hood 70 which is shown schematically in FIG. 4, serves to receive the wafers lifted out of the treatment basin 36 and to transport them to the output station 40.
  • the dry transfer hood has lateral guides 71 for receiving and guiding the wafers 8 and a locking element 72 in order to hold the received wafers.
  • the cover 70 has a gas feed 75, via which a gas mixture, which consists, for example, of nitrogen and isopropyl alcohol (N 2 / IPA), can be introduced.
  • the collecting basin 30, the fine cleaning device 35 and the dispensing unit 40 are arranged in a row with the input area 5, the receiving and collecting basin 8, and the first and second brush cleaning devices 10 and 11.
  • a wafer 8 is picked up by an external wet robot, not shown, from a polisher output station, not shown, possibly rotated into a vertical position, and placed on the receiving and holding element 7 of the input area 5.
  • the dealer 50 then grips the wafer and first transports it into the liquid-filled receptacle 9, and deposits it therein.
  • the receiving basin 9 can accommodate up to five wafers, for example.
  • the dealer 50 then takes the wafer out of the receiving basin 9 again and drives it over the first brush cleaning device 10, the lid 14 of which opens.
  • the dealer 50 deposits the wafer on the support 17 in the treatment basin 15 and moves out of the brush cleaning device.
  • the pressure rollers 22, 24 and the brush rollers 20, 21 are brought into engagement with the wafer, and the treatment tank 15 is filled with a liquid 16, for example di-water, until it overflows, so that the wafer 8 is half-immersed.
  • the brush rollers 20, 21 are rotated and thereby press the wafer 8 slightly upwards against the pressure rollers 22, 24, as a result of which the wafer 8 is lifted off the receptacle 17 and is set into a rotary movement by the rotating pressure rollers 22, 24.
  • the wafer is roughly cleaned by the brush rollers 20, 21.
  • the ultrasound transmitter is activated, thereby increasing the cleaning effect.
  • the rotational speed of the brush rollers 20, 21 and the pressure rollers 22, 24 is slowed down towards the end of the cleaning, whereby the wafer 8 is lowered back into the receptacle 7.
  • the brush rollers 20, 21 and the pressure rollers 22, 24 are moved away from the wafer 8 and the lid 14 of the brush cleaning device 10 opens.
  • the second handler 60 moves over the first brush cleaning device 10, grips the wafer 8 and transports it into the second brush cleaning device 11, where it deposits the wafer 8 on a support.
  • the cleaning process from the first brush basin 10 is essentially repeated, this time using no ultrasound, and the water in the treatment basin is also not made to overflow.
  • the wafer After cleaning in the second brush cleaning device 11, the wafer is gripped by the second handler 60, transported over the collecting basin 30 and inserted into the receiving device located therein. The previous steps are repeated with new wafers in each case until all the places in the collecting basin 30 are occupied.
  • the wet transfer hood 65 When all the seats in the collecting basin 30 are occupied, the wet transfer hood 65 is moved over the collecting basin 30, and all wafers 8 are lifted together from the collecting basin 30 into the wet transfer hood 65 and locked. When the wafers 8 are locked in the wet transfer hood 65, they move over the fine cleaning device 35.
  • the lifting and lowering device 37 located in the treatment basin 36 is raised in order to receive the wafers 8 accommodated in the wet transfer hood 65 . Then the locking mechanism of the wet transfer hood 65 and the wafers 8 are released together via the lifting / lowering device 37 into the treatment basin 36, which is filled with a treatment fluid such as e.g. B. Di-water is filled, lowered. From the nozzles 38 in
  • Cleaning liquid is injected between the wafers 8 in the pelvic floor.
  • the di-water in the container will then become displaced above and runs over an overflow.
  • the ultrasound transmitter is activated for a specific treatment tent.
  • the cleaning liquid is drained down by means of a quick dump valve 39 and the container is again filled with di-water from below.
  • the dry transfer hood 70 is moved over the treatment basin 36, and a gas mixture, such as N 2 / IPA, is introduced as a layer over the surface of the DI water via the hood 70.
  • the wafers 8 are lifted from the di-water m together with the lifting / lowering device 37, the dry transfer hood 70.
  • the locking mechanism 72 of the hood is actuated to hold the wafers 8.
  • the dry transfer hood 70 then travels over the output station 40 and deposits the wafers 8 on the wafer holder of the output station 40 by opening the locking mechanism 72.
  • the wafers 8 are picked up from the output station with an external drying robot.
  • the present invention has been described using a specific exemplary embodiment. However, the invention is not restricted to this special exemplary embodiment.
  • the invention is not restricted to this special exemplary embodiment.
  • this requires a very precise timing, since the wafer should not remain in the receiving area for too long, since otherwise liquids present on the wafer could dry out.
  • the wafers are operated by an external robot are inserted directly into the receiving basin 9 and the dealer 50 only transports the wafers from the receiving and collecting basin 9 into the brush cleaning device 10.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)

Abstract

Dans un procédé et un dispositif pour le nettoyage de substrats (8), ces derniers subissent chacun individuellement un prénettoyage par voie humide dans au moins une installation de nettoyage grossier (10, 11), ils sont ensuite transportés à l'état humide dans un bac collecteur (30) rempli d'un fluide de traitement, ils sont rassemblés dans le bac collecteur (30) et lorsqu'un certain nombre de substrats se trouve dans le bac collecteur (30), ils sont transportés ensemble sous forme d'une charge à l'état humide dans une installation de nettoyage fin (35). Dans cette installation de nettoyage fin (35), la charge constituée des substrats (8) subit un nettoyage final par voie humide et est ensuite séchée.
EP99934565A 1998-07-06 1999-07-03 Procede et dispositif pour le nettoyage de substrats Withdrawn EP1101245A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19830162A DE19830162A1 (de) 1998-07-06 1998-07-06 Verfahren und Vorrichtung zum Reinigen von Substraten
DE19830162 1998-07-06
PCT/EP1999/004633 WO2000002234A2 (fr) 1998-07-06 1999-07-03 Procede et dispositif pour le nettoyage de substrats

Publications (1)

Publication Number Publication Date
EP1101245A2 true EP1101245A2 (fr) 2001-05-23

Family

ID=7873131

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99934565A Withdrawn EP1101245A2 (fr) 1998-07-06 1999-07-03 Procede et dispositif pour le nettoyage de substrats

Country Status (6)

Country Link
EP (1) EP1101245A2 (fr)
JP (1) JP2002520132A (fr)
KR (1) KR20010071759A (fr)
DE (1) DE19830162A1 (fr)
TW (1) TW439135B (fr)
WO (1) WO2000002234A2 (fr)

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DE10118167B4 (de) * 2000-04-11 2007-06-28 Samsung Electronics Co., Ltd., Suwon Vorrichtung und Verfahren zur Reinigung von Halbleiterwafern
DE10103111A1 (de) * 2001-01-24 2002-08-01 Mattson Wet Products Gmbh Vorrichtung zum Behandeln von Substraten
DE10122669A1 (de) * 2001-05-10 2002-12-12 Mattson Wet Products Gmbh Vorrichtung zum Nassreinigen von scheibenförmigen Substraten
DE10200525A1 (de) * 2002-01-09 2003-10-23 Mattson Wet Products Gmbh Vorrichtung und Verfahren zum Behandeln von scheibenförmigen Substraten
DE10219771B4 (de) * 2002-05-03 2006-05-11 Emag Ag Vorrichtung zum automatischen Reinigen von in Maschinenkassetten aufgenommenen Vakuumhaltern oder -pipetten
KR100677034B1 (ko) * 2003-10-20 2007-01-31 동부일렉트로닉스 주식회사 반도체 소자의 세정방법 및 그 장치
TWI415533B (zh) * 2010-09-15 2013-11-11 Zhen Ding Technology Co Ltd 濕處理裝置及濕處理方法
CN109518203B (zh) * 2018-12-13 2020-10-30 江苏美霖铜业有限公司 一种有色金属表面处理装置
DE102022104205B3 (de) 2022-02-22 2023-06-22 Hiwin Technologies Corp. Automatisches Parameterladeverfahren und -system sowie Serviceserver und Client-Server

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JP2543007B2 (ja) * 1993-08-23 1996-10-16 株式会社エンヤシステム ウエ−ハ枚葉洗浄装置
DE4413077C2 (de) * 1994-04-15 1997-02-06 Steag Micro Tech Gmbh Verfahren und Vorrichtung zur chemischen Behandlung von Substraten
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Also Published As

Publication number Publication date
WO2000002234A3 (fr) 2000-08-24
KR20010071759A (ko) 2001-07-31
WO2000002234A2 (fr) 2000-01-13
DE19830162A1 (de) 2000-01-20
JP2002520132A (ja) 2002-07-09
TW439135B (en) 2001-06-07

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