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EP1033793A4 - Dispositif laser a semi-conducteur - Google Patents

Dispositif laser a semi-conducteur

Info

Publication number
EP1033793A4
EP1033793A4 EP99929803A EP99929803A EP1033793A4 EP 1033793 A4 EP1033793 A4 EP 1033793A4 EP 99929803 A EP99929803 A EP 99929803A EP 99929803 A EP99929803 A EP 99929803A EP 1033793 A4 EP1033793 A4 EP 1033793A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor laser
laser device
heat sink
distance
sink block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99929803A
Other languages
German (de)
English (en)
Other versions
EP1033793A1 (fr
EP1033793B1 (fr
Inventor
Takehiro Shiomoto
Ikuo Kohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of EP1033793A1 publication Critical patent/EP1033793A1/fr
Publication of EP1033793A4 publication Critical patent/EP1033793A4/fr
Application granted granted Critical
Publication of EP1033793B1 publication Critical patent/EP1033793B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/141—Beam splitting or combining systems operating by reflection only using dichroic mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B2007/0003—Recording, reproducing or erasing systems characterised by the structure or type of the carrier
    • G11B2007/0006—Recording, reproducing or erasing systems characterised by the structure or type of the carrier adapted for scanning different types of carrier, e.g. CD & DVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)

Abstract

Ce dispositif laser à semi-conducteur (100) comprend un premier (31) ainsi qu'un second (32) élément à semi-conducteur, lesquels possèdent des longueurs d'ondes différentes et sont montés soit directement sur un bloc thermique (2), soit sur un autre montage agencé sur le bloc thermique. Les axes optiques (A, B) des éléments à semi-conducteur sont sensiblement parallèles l'un avec l'autre. Ces premier et second éléments de laser à semi-conducteur (31, 32) sont montés sur le puits thermique (2) de manière que 0≤L≤d1+d2≤160 νm, d1 représentant la distance entre l'axe optique (A) du premier élément (31) et l'axe médian (O) d'une lentille de condensation (71) disposée devant le dispositif laser à semi-conducteur (c'est-à-dire faisant face aux surfaces émettrices des éléments à semi-conducteur), d2 représentant la distance entre l'axe optique (B) du second élément à semi-conducteur (32) et l'axe médian de la lentille de condensation, et L représentant la distance entre les axes optiques des premier et second éléments de laser à semi-conducteur.
EP99929803A 1998-07-14 1999-07-13 Dispositif laser a semi-conducteur Expired - Lifetime EP1033793B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19845798 1998-07-14
JP19845798 1998-07-14
PCT/JP1999/003765 WO2000004614A1 (fr) 1998-07-14 1999-07-13 Dispositif laser a semi-conducteur

Publications (3)

Publication Number Publication Date
EP1033793A1 EP1033793A1 (fr) 2000-09-06
EP1033793A4 true EP1033793A4 (fr) 2001-04-18
EP1033793B1 EP1033793B1 (fr) 2004-09-29

Family

ID=16391432

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99929803A Expired - Lifetime EP1033793B1 (fr) 1998-07-14 1999-07-13 Dispositif laser a semi-conducteur

Country Status (6)

Country Link
US (1) US6456635B1 (fr)
EP (1) EP1033793B1 (fr)
KR (1) KR100333027B1 (fr)
CN (1) CN1118911C (fr)
DE (1) DE69920653T2 (fr)
WO (1) WO2000004614A1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223791A (ja) 1999-02-04 2000-08-11 Sharp Corp 半導体レーザ装置およびその製造方法
JP2000353332A (ja) 1999-04-19 2000-12-19 Samsung Electronics Co Ltd 光出力モジュール及びこれを採用した互換型光ピックアップ装置
JP3849967B2 (ja) * 2000-05-19 2006-11-22 シャープ株式会社 光ピックアップ
JP3844290B2 (ja) * 2001-01-24 2006-11-08 シャープ株式会社 ホログラムレーザおよび光ピックアップ
JP2003324238A (ja) * 2002-05-02 2003-11-14 Sumitomo Electric Ind Ltd レーザモジュールおよび光ネットワーク
WO2003102938A1 (fr) * 2002-06-03 2003-12-11 Sony Corporation Element optique a deux longueurs d'ondes
JP3759081B2 (ja) 2002-07-18 2006-03-22 Ｎｅｃ化合物デバイス株式会社 半導体レーザ装置
JP2004152845A (ja) * 2002-10-29 2004-05-27 Sharp Corp 半導体レーザ装置
KR20040076650A (ko) * 2003-02-26 2004-09-03 삼성전자주식회사 광픽업 장치
JP4639578B2 (ja) * 2003-06-27 2011-02-23 日本電気株式会社 半導体レーザモジュール及びその製造方法
US7086390B2 (en) * 2004-11-05 2006-08-08 Briggs & Stratton Corporation Integrated fuel tank and vapor containment system
KR100576881B1 (ko) * 2005-01-03 2006-05-10 삼성전기주식회사 반도체 레이저 다이오드장치 및 그 제조방법
GB2432785B (en) * 2005-12-05 2011-08-10 Gerald Hipperson A lotion application compartment
JP4711838B2 (ja) * 2006-01-27 2011-06-29 株式会社東芝 多波長半導体レーザ装置
JP4283837B2 (ja) * 2006-09-26 2009-06-24 シャープ株式会社 半導体レーザ装置およびそれを用いた光ピックアップ装置
TW200947893A (en) * 2008-05-08 2009-11-16 Truelight Corp Dual-wavelength laser element for fiber communication
TW200947895A (en) * 2008-05-08 2009-11-16 Truelight Corp Tri-wavelength bi-directional fiber communication system
CN101587216B (zh) * 2008-05-20 2013-03-20 光环科技股份有限公司 用于光纤通信的双波长激光组件
CN108258577B (zh) * 2018-03-20 2019-08-23 福建中科光芯光电科技有限公司 一种用于提升激光器芯片可靠性及耦合效率的倒装封装
US11824323B1 (en) * 2018-12-06 2023-11-21 Nlight, Inc. Diode laser package for bidirectionally emitting semiconductor laser devices
CN112582874B (zh) * 2019-09-29 2021-10-01 山东华光光电子股份有限公司 一种激光光灸用复合激光器及封装方法

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US4517667A (en) * 1982-06-10 1985-05-14 Xerox Corporation Direct read after write optical disk system
JPS63298724A (ja) * 1987-03-16 1988-12-06 Nippon Telegr & Teleph Corp <Ntt> 相変態形書き替え可能光記録媒体光ヘツド用半導体アレイレ−ザ
US4860276A (en) * 1986-09-18 1989-08-22 Nippon Telegraph And Telephone Corporation Micro optical head with an optically switched laser diode
JPH02159083A (ja) * 1988-12-12 1990-06-19 Mitsubishi Electric Corp 半導体レーザ装置
JPH0432288A (ja) * 1990-05-29 1992-02-04 Toshiba Corp 集積型半導体レーザ装置
JPH09128782A (ja) * 1995-11-02 1997-05-16 Sanyo Electric Co Ltd 光学式記録媒体の再生装置
JPH1031841A (ja) * 1996-07-18 1998-02-03 Olympus Optical Co Ltd 光ピックアップ
EP0838813A2 (fr) * 1996-10-24 1998-04-29 Samsung Electronics Co., Ltd. Dispositif de lecture optique compatible avec plusieurs formats de disque

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JPS62152474A (ja) 1985-12-26 1987-07-07 アロカ株式会社 マグネテイツクインプラント加温装置
JPH054288Y2 (fr) * 1986-03-19 1993-02-02
JPH0652582B2 (ja) 1987-09-01 1994-07-06 株式会社日立製作所 光ヘッド
JPH04154182A (ja) 1990-10-18 1992-05-27 Nec Corp 半導体レーザ装置
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JPH09320098A (ja) 1996-05-27 1997-12-12 Sony Corp 光ピックアップ装置および複合光学装置
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JPH11112108A (ja) 1997-09-30 1999-04-23 Victor Co Of Japan Ltd 半導体レーザ素子

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US4517667A (en) * 1982-06-10 1985-05-14 Xerox Corporation Direct read after write optical disk system
US4860276A (en) * 1986-09-18 1989-08-22 Nippon Telegraph And Telephone Corporation Micro optical head with an optically switched laser diode
JPS63298724A (ja) * 1987-03-16 1988-12-06 Nippon Telegr & Teleph Corp <Ntt> 相変態形書き替え可能光記録媒体光ヘツド用半導体アレイレ−ザ
JPH02159083A (ja) * 1988-12-12 1990-06-19 Mitsubishi Electric Corp 半導体レーザ装置
JPH0432288A (ja) * 1990-05-29 1992-02-04 Toshiba Corp 集積型半導体レーザ装置
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JPH09128782A (ja) * 1995-11-02 1997-05-16 Sanyo Electric Co Ltd 光学式記録媒体の再生装置
JPH1031841A (ja) * 1996-07-18 1998-02-03 Olympus Optical Co Ltd 光ピックアップ
EP0838813A2 (fr) * 1996-10-24 1998-04-29 Samsung Electronics Co., Ltd. Dispositif de lecture optique compatible avec plusieurs formats de disque

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Also Published As

Publication number Publication date
CN1118911C (zh) 2003-08-20
KR100333027B1 (ko) 2002-04-15
KR20010023938A (ko) 2001-03-26
EP1033793A1 (fr) 2000-09-06
DE69920653T2 (de) 2005-10-13
US6456635B1 (en) 2002-09-24
EP1033793B1 (fr) 2004-09-29
CN1273703A (zh) 2000-11-15
WO2000004614A1 (fr) 2000-01-27
DE69920653D1 (de) 2004-11-04

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