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EP0976457A1 - Procédé de traitement de matériau semiconducteur - Google Patents

Procédé de traitement de matériau semiconducteur Download PDF

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Publication number
EP0976457A1
EP0976457A1 EP99113591A EP99113591A EP0976457A1 EP 0976457 A1 EP0976457 A1 EP 0976457A1 EP 99113591 A EP99113591 A EP 99113591A EP 99113591 A EP99113591 A EP 99113591A EP 0976457 A1 EP0976457 A1 EP 0976457A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor material
energy
shock wave
pulse
energy converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99113591A
Other languages
German (de)
English (en)
Other versions
EP0976457B1 (fr
Inventor
Matthäus Schantz
Dirk Dr. Flottmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
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Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of EP0976457A1 publication Critical patent/EP0976457A1/fr
Application granted granted Critical
Publication of EP0976457B1 publication Critical patent/EP0976457B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/18—Use of auxiliary physical effects, e.g. ultrasonics, irradiation, for disintegrating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
    • B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
    • B02C19/00—Other disintegrating devices or methods
    • B02C19/18—Use of auxiliary physical effects, e.g. ultrasonics, irradiation, for disintegrating
    • B02C2019/183—Crushing by discharge of high electrical energy

Definitions

  • the invention relates to a method for treating Semiconductor material.
  • Crystal rods are used as a starting material, for example Manufacture of single crystals needed.
  • Crystal rods are first crushed into fragments. These fragments are melted in a crucible and then the single crystal is formed Melt drawn.
  • the dopants specifically introduced into the semiconductor material be the only impurity in the semiconductor material is present.
  • the The aim is to prevent contamination of the semiconductor material minimize.
  • EP-573 855 A1 (corresponds to US 5,464,159) describes in detail the with the crushing of semiconductor materials in Related problems as well as various already proposed solutions.
  • EP-573 855 A1 discloses a Process in which a crystal rod is focused using Shock waves is smashed. It is by repeated Action of shock waves on the semiconductor material this way long to crush until the fragments of the semiconductor material are smaller than a desired limit the fragments.
  • a crucible for pulling single crystals that is too big polycrystalline silicon fragments is filled a comparatively low degree of filling and thus contains not enough material to make a single crystal of the necessary or desired size.
  • the too big fragments also lead to an extension of the melting time in the Crucibles, which in turn lead to undesirable contamination can. Fragments that are too large must therefore be shredded to avoid these disadvantages.
  • Fragments that are too small are more likely due to their large surface area contaminated and would therefore have to be expensive from impurities be freed. Because of this, small fragments and Particulate matter that occurs when the polysilicon rods are shredded arises, not used for the production of single crystals, but are e.g. for the production of solar silicon used.
  • the contamination arising during the treatment should less than with conventional crushing Hand chisels in rooms with clean classes greater than 1000.
  • the invention relates to a method for treating Semiconductor materials, in which one or more by means of a Energy converter generated shock waves, in a liquid Transfer medium to a rod-shaped semiconductor material are characterized in that the energy converter from Semiconductor material has a distance of 1 cm to 100 cm and a shock wave a pulse energy of 1 to 20 kJ and one Has pulse rise time up to the energy maximum of 1 to 5 ⁇ s.
  • the energy converter never has a direct one Contact with the semiconductor material.
  • the shock waves are from their place of origin, preferably by a liquid Medium, for example water, preferably degassed water highest purity, transferred.
  • the energy converter is preferably spaced from 1 to 12 cm, particularly preferably from 1.5 to 3 cm from the surface of the semiconductor material.
  • Shock waves are caused, for example, by explosive charges, electrical discharges, on electromagnetic or Piezoelectric path can be generated.
  • a shock wave preferably has a pulse energy of 10 to 15 kJ, particularly preferably 11 to 13 kJ.
  • the shock wave preferably has a pulse rise time up to Energy maximum of 2 to 4 ⁇ s.
  • the invention thus also relates to the use of the Method according to the invention for crushing Semiconductor material.
  • shock waves from electrical discharge between two electrodes in the focal point of a semi-ellipsoid reflector to create. That between the discharge the plasma forming the electrodes leads to a Speed of sound propagating in the transmission medium, spherical shock wave front, which from the walls of the Reflector reflects and in the focus of an imaginary to Half-ellipsoids arranged in mirror symmetry is bundled. The is around this focal point Focus area of the semi-ellipsoid reflector.
  • the size of the energy input determines in which area and how many microcracks form and thus the size of the fracture.
  • the shock wave is focused on the semiconductor rod usually not in the case of bars made of currently customary materials required.
  • the method according to the invention does not make a small one Part of the rod crushed, but the whole with the shock wave
  • the loaded rod area is shredded homogeneously.
  • a comminution chamber filled with water is expedient provided that in the simplest case Can be water basin, in which the to be shredded Semiconductor material is introduced.
  • the shock waves are coupled into the comminution chamber.
  • the semi-ellipsoid reflector in the comminution chamber located or mounted on one of their boundary surfaces. If necessary, the location of the shock wave generation is determined by one that transmits shock waves impermeable to foreign substances Membrane spatially separated from the semiconductor material to get it in front To protect contaminants.
  • the rod When using 1 or two energy converters, the rod preferably treated bit by bit with one pulse each.
  • each two energy converters at an angle of 180 ° to each other arranged.
  • the semiconductor material is preferably comminuted at low temperatures, for example room temperature, see above that an induced by high temperatures and / or accelerated diffusion of superficially adsorbed Foreign substances, especially foreign metals, largely avoided becomes.
  • the work surfaces of the tools for transportation and the Positioning of the semiconductor material are to Exclude impurities, preferably made of plastic, such as polyethylene (PE), polytetrafluoroethylene (PTFE) or polyvinylidene difluoride (PVDF), or from the Material such as the comminuted material itself. As well it has proven to be convenient to use the inner surfaces of the Line the shredding chamber with plastic.
  • PE polyethylene
  • PTFE polytetrafluoroethylene
  • PVDF polyvinylidene difluoride
  • the method according to the invention enables use for the first time the shock wave comminution for the comminution of Semiconductor material such that a specifically adjustable Fractional size distribution of the semiconductor material is obtained.
  • the inventive method has the advantage that Strength and possibly also direction of the impulses that affect the Crystal surface act, a force is exerted by their effect, the number and direction of microcracks being affected. The number and orientation of the cracks along The grain boundaries of the material determine the shape and size of the newly created fragments.
  • Another advantage of the method according to the invention lies in the fact that it is still in the effective range of the pulse generator Fragments not further crushed by further impulses be so that the post-shredding in this process has no significant influence.
  • the one through the Impact, abrasion causing contamination from the rod base can by the geometric arrangement the energy converter can be greatly minimized.
  • the invention thus also relates to the use of the Process according to the invention for cleaning Semiconductor material.
  • cavitation bubbles occur as a result of the shock waves, which have a cleaning effect on the surface of the semiconductor material.
  • oxidizing compounds are formed in the cavitation bubbles, which are usually used for cleaning semiconductor materials. So are found in the liquid in which the method is carried out after performing the method z.
  • the oxidizing compounds occur in very high local concentrations, which are in the mol / l range, since the compounds are initially limited to the cavitation bubbles, that is, they are formed there and z. T. also be destroyed again.
  • a cleaning effect occurs not only through the implosion of the cavitation bubbles on the surface of the semiconductor material, but also through the cleaning action of the oxidizing compounds which act on the surface in high local concentrations when the gas bubbles break up on the surface of the semiconductor material.
  • the method according to the invention is massive for the treatment, large-volume body made of semiconductor material, preferably made of mono- or polycrystalline silicon, suitable.
  • the semiconductor material is preferably polycrystalline silicon.
  • Fig. 1 shows an apparatus for performing the inventive method as used in Example 1 becomes.
  • a piece of a from a separation plant polycrystalline silicon rod (1) was on a base made of polysilicon rods (2) completely into a water-filled one Basin (3) immersed. At a distance of 2 cm from the Rod surface are two semi-ellipsoid reflectors (4) arranged so that they form an angle of 180 ° to each other, being in the middle between the semi-ellipsoid reflectors the silicon rod (1) is located.
  • the semi-ellipsoid reflectors (4) are via supply lines (5) with the associated Energy supply facilities (6) connected.
  • a shock wave pulse with a pulse energy of 12kJ and a pulse duration of 3 ⁇ s was generated by igniting an arc between the electrodes (8) of the semi-ellipsoid reflector.
  • the shock wave runs over an elastic membrane (7) to the surface of the silicon rod (1).
  • the position of the rod in the pelvis was chosen so that it at least approximately matched the focusing area of a semi-ellipsoid reflector.
  • the rod section exposed to the shock wave had a diameter of 190 mm and a length of 1.20 m.
  • the treatment resulted in fragments of the following size: Fracture size (longest dimension / cm) Proportion (% by weight) 0 to 1 2nd > 1 to 4.5 3rd > 4.5 to 7 15 > 7 to 12 75 > 12 5
  • This size distribution is for further processing in Crucible pulling process very well suited.

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Food Science & Technology (AREA)
  • Mechanical Engineering (AREA)
  • Disintegrating Or Milling (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP99113591A 1998-07-30 1999-07-08 Procédé de traitement de matériau semiconducteur Expired - Lifetime EP0976457B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19834447A DE19834447A1 (de) 1998-07-30 1998-07-30 Verfahren zum Behandeln von Halbleitermaterial
DE19834447 1998-07-30

Publications (2)

Publication Number Publication Date
EP0976457A1 true EP0976457A1 (fr) 2000-02-02
EP0976457B1 EP0976457B1 (fr) 2000-11-15

Family

ID=7875902

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99113591A Expired - Lifetime EP0976457B1 (fr) 1998-07-30 1999-07-08 Procédé de traitement de matériau semiconducteur

Country Status (4)

Country Link
US (1) US6360755B1 (fr)
EP (1) EP0976457B1 (fr)
JP (1) JP3180910B2 (fr)
DE (2) DE19834447A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003078321A1 (fr) * 2002-03-18 2003-09-25 Wacker-Chemie Gmbh Poudre de silice de grande purete, procede et dispositif pour sa production
WO2009047107A3 (fr) * 2007-10-02 2010-03-11 Wacker Chemie Ag Silicium polycristallin et son procédé de production
US7780937B2 (en) 2005-03-09 2010-08-24 Evonik Degussa Gmbh Granules based on pyrogenically prepared silicon dioxide, method for their preparation and use thereof
WO2010106056A1 (fr) * 2009-03-16 2010-09-23 Schmid Silicon Technology Gmbh Purification de silicium métallurgique
RU2411083C2 (ru) * 2009-03-20 2011-02-10 Юрий Владимирович Борисов Способ диспергирования и сепарации материалов и устройство для его осуществления
CN102600948A (zh) * 2012-03-29 2012-07-25 北京德高洁清洁设备有限公司 一种全自动机械化多晶硅破碎机
CN103372490A (zh) * 2012-04-13 2013-10-30 洛阳理工学院 一种带有回转臂的自平衡冲击多晶硅破碎机
RU2733434C1 (ru) * 2020-02-27 2020-10-01 Анатолий Евгеньевич Волков Способ и устройство электроимпульсного дробления-сепарации
CN112334232A (zh) * 2018-07-04 2021-02-05 三菱综合材料株式会社 半导体原料的破碎方法或裂纹产生方法及半导体原料块的制造方法
CN113304848A (zh) * 2021-07-08 2021-08-27 江苏鑫华半导体材料科技有限公司 一种硅块破碎装置及使用方法、硅块破碎方法及应用方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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JPH1167786A (ja) * 1997-08-25 1999-03-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE10009569C2 (de) * 2000-02-29 2003-03-27 Schott Glas Verfahren und Vorrichtung zum Zerkleinern von Glaskörpern mittels Mikrowellenerwärmung
IL147049A0 (en) * 2001-12-12 2002-08-14 Do Coop Techmologies Ltd Thermal process involving cold rf irradiated liquid as core method for producing nano-size particles
DE102005019873B4 (de) * 2005-04-28 2017-05-18 Wacker Chemie Ag Vorrichtung und Verfahren zum maschinellen Zerkleinern von Halbleitermaterialien
DE102012213565A1 (de) 2012-08-01 2014-02-06 Wacker Chemie Ag Vorrichtung und Verfahren zum Zerkleinern eines polykristallinen Siliciumstabs
CN102836765B (zh) * 2012-09-18 2014-12-31 新特能源股份有限公司 一种破碎多晶硅的方法及其装置
JP2016531833A (ja) * 2013-08-29 2016-10-13 ザ ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティー 電磁力を用いた材料劈開のための制御された亀裂伝播の方法
JP6339994B2 (ja) * 2015-12-08 2018-06-06 パナソニック株式会社 放電破砕装置及び放電破砕方法
JP6722874B2 (ja) * 2017-06-06 2020-07-15 パナソニックＩｐマネジメント株式会社 板状物品の分解装置
JP2021107042A (ja) * 2019-12-27 2021-07-29 三菱マテリアル株式会社 半導体材料の破砕方法又はクラック発生方法、及び半導体材料塊の製造方法
US11630153B2 (en) * 2021-04-26 2023-04-18 Winbond Electronics Corp. Chip testing apparatus and system with sharing test interface
CN114433330B (zh) * 2022-02-08 2023-06-02 西安交通大学 一种可控冲击波破碎矿石的装置及方法
US11865546B2 (en) * 2022-02-11 2024-01-09 Sharp Pulse Corp. Material extracting system and method

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WO1986006652A1 (fr) * 1985-05-03 1986-11-20 Ceee Corporation Procede et appareil de fragmentation d'une substance par decharge d'energie electrique pulsee
US5082502A (en) * 1988-09-08 1992-01-21 Cabot Corporation Cleaning apparatus and process
EP0573855A1 (fr) 1992-05-27 1993-12-15 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH Procédé de broyage sans contamination de matériaux semi-conducteurs, notamment de silicium
DE19545579A1 (de) * 1995-12-07 1997-06-12 Tzn Forschung & Entwicklung Verfahren und Anordnung zur Zerkleinerung von Materialien in metallischen Gehäusen, insbesondere Autokatalysatoren
DE19749127A1 (de) * 1997-11-06 1999-05-20 Wacker Chemie Gmbh Verfahren zur Vorbereitung der Zerkleinerung eines Kristalls

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US4313573A (en) * 1980-02-25 1982-02-02 Battelle Development Corporation Two stage comminution
DE19534232C2 (de) * 1995-09-15 1998-01-29 Karlsruhe Forschzent Verfahren zur Zerkleinerung und Zertrümmerung von aus nichtmetallischen oder teilweise metallischen Bestandteilen konglomerierten Festkörpern und zur Zerkleinerung homogener nichtmetallischer Festkörper
US6033994A (en) * 1997-05-16 2000-03-07 Sony Corporation Apparatus and method for deprocessing a multi-layer semiconductor device

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WO1986006652A1 (fr) * 1985-05-03 1986-11-20 Ceee Corporation Procede et appareil de fragmentation d'une substance par decharge d'energie electrique pulsee
US5082502A (en) * 1988-09-08 1992-01-21 Cabot Corporation Cleaning apparatus and process
EP0573855A1 (fr) 1992-05-27 1993-12-15 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH Procédé de broyage sans contamination de matériaux semi-conducteurs, notamment de silicium
US5464159A (en) 1992-05-27 1995-11-07 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Method for the contamination-free size reduction of semiconductor material, especially silicon
DE19545579A1 (de) * 1995-12-07 1997-06-12 Tzn Forschung & Entwicklung Verfahren und Anordnung zur Zerkleinerung von Materialien in metallischen Gehäusen, insbesondere Autokatalysatoren
DE19749127A1 (de) * 1997-11-06 1999-05-20 Wacker Chemie Gmbh Verfahren zur Vorbereitung der Zerkleinerung eines Kristalls

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003078321A1 (fr) * 2002-03-18 2003-09-25 Wacker-Chemie Gmbh Poudre de silice de grande purete, procede et dispositif pour sa production
US7780937B2 (en) 2005-03-09 2010-08-24 Evonik Degussa Gmbh Granules based on pyrogenically prepared silicon dioxide, method for their preparation and use thereof
CN101815671B (zh) * 2007-10-02 2012-10-24 瓦克化学股份公司 多晶硅及其生产方法
WO2009047107A3 (fr) * 2007-10-02 2010-03-11 Wacker Chemie Ag Silicium polycristallin et son procédé de production
US8398946B2 (en) 2007-10-02 2013-03-19 Wacker Chemie Ag Polycrystalline silicon and method for the production thereof
WO2010106056A1 (fr) * 2009-03-16 2010-09-23 Schmid Silicon Technology Gmbh Purification de silicium métallurgique
RU2411083C2 (ru) * 2009-03-20 2011-02-10 Юрий Владимирович Борисов Способ диспергирования и сепарации материалов и устройство для его осуществления
CN102600948A (zh) * 2012-03-29 2012-07-25 北京德高洁清洁设备有限公司 一种全自动机械化多晶硅破碎机
CN103372490A (zh) * 2012-04-13 2013-10-30 洛阳理工学院 一种带有回转臂的自平衡冲击多晶硅破碎机
CN103372490B (zh) * 2012-04-13 2015-04-22 洛阳理工学院 一种带有回转臂的自平衡冲击多晶硅破碎机
CN112334232A (zh) * 2018-07-04 2021-02-05 三菱综合材料株式会社 半导体原料的破碎方法或裂纹产生方法及半导体原料块的制造方法
EP3819031A4 (fr) * 2018-07-04 2022-04-27 Mitsubishi Materials Corporation Procédé de fragmentation ou procédé de production de fissures dans une matière première semi-conductrice et procédé de production de masse de matière première semi-conductrice
RU2733434C1 (ru) * 2020-02-27 2020-10-01 Анатолий Евгеньевич Волков Способ и устройство электроимпульсного дробления-сепарации
WO2021173032A1 (fr) * 2020-02-27 2021-09-02 Общество С Ограниченной Ответственностью «Дельтарут» Dispositif et procédé de broyage-séparation par impulsions électriques
CN113304848A (zh) * 2021-07-08 2021-08-27 江苏鑫华半导体材料科技有限公司 一种硅块破碎装置及使用方法、硅块破碎方法及应用方法

Also Published As

Publication number Publication date
US6360755B1 (en) 2002-03-26
JP2000079350A (ja) 2000-03-21
EP0976457B1 (fr) 2000-11-15
DE19834447A1 (de) 2000-02-10
DE59900015D1 (de) 2000-12-21
JP3180910B2 (ja) 2001-07-03

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