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EP0961371B1 - Optoelectronic module containing at least one optoelectronic component and temperature stabilising method - Google Patents

Optoelectronic module containing at least one optoelectronic component and temperature stabilising method Download PDF

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Publication number
EP0961371B1
EP0961371B1 EP98440107A EP98440107A EP0961371B1 EP 0961371 B1 EP0961371 B1 EP 0961371B1 EP 98440107 A EP98440107 A EP 98440107A EP 98440107 A EP98440107 A EP 98440107A EP 0961371 B1 EP0961371 B1 EP 0961371B1
Authority
EP
European Patent Office
Prior art keywords
temperature
optoelectronic
substrate
component
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP98440107A
Other languages
German (de)
French (fr)
Other versions
EP0961371A1 (en
Inventor
Jean-Luc Goudard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia Inc
Original Assignee
Alcatel SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA
Priority to EP98440107A priority Critical patent/EP0961371B1/en
Priority to DE69801648T priority patent/DE69801648T2/en
Priority to CA002272178A priority patent/CA2272178A1/en
Priority to JP11138460A priority patent/JP2000164968A/en
Priority to US09/317,222 priority patent/US6359330B1/en
Publication of EP0961371A1 publication Critical patent/EP0961371A1/en
Application granted granted Critical
Publication of EP0961371B1 publication Critical patent/EP0961371B1/en
Priority to US10/013,659 priority patent/US6528329B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8584—Means for heat extraction or cooling electrically controlled, e.g. Peltier elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres

Definitions

  • This invention relates to an optoelectronic module containing at least one optoelectronic component and to a method for stabilizing its temperature as set forth in the preambles of the respective independent claims.
  • the optoelectronic module according the invention has the advantage that the temperature measurement takes place directly on the substrate.
  • the thermistor is connected to the substrate by an electric connection, and the temperature measurement takes place on the substrate, and thus close to the laser diode or photodiode.
  • the extra cost of an additional electric wire connection is offset by the advantages of the assembly.
  • the advantage is a temperature setting at the location of the laser diode itself, based on a temperature measurement which is also made at the location of the laser diode. This makes it possible to achieve very high temperature stability and thus ensure laser stability, which is of great importance for the transmission of high data rates.
  • FIG. 1 shows schematically the construction of an optoelectronic module with a housing 1.
  • a laser diode 2 and a thermistor 4 are mounted on a substrate 9.
  • the substrate 9 rests flat on a Peltier element 6.
  • a monitor photodiode 3 which has an electric connection to a current regulator 5 which in turn is connected to the laser 2.
  • the light emitted by the laser diode 2 is concentrated by a lens 8 and lauchend into an optical fiber.
  • the thermistor 4 is connected by an electric line to a point 10 on the substrate. Its electric lead 11 is brought out through the housing.
  • the thermistor is also connected to a temperature controller which in turn is connected to the Peltier element 6.
  • the idea of the invention was implemented by connecting the thermistor 4 via an additional electric line to the measuring point 10.
  • This additional electric line permits the reference temperature to be determined at the point 10 rather than at the point where the electric lead 11 is fed through the wall of the housing 1, as is customary in the prior art.
  • temperature stabilization at the location of the laser diode is possible with a very high degree of accuracy. The stabilization no longer depends on the temperature of the air surrounding the housing. A high stability of the laser temperature can thus be achieved, thus ensuring the stability necessary for the transmission of high data rates.
  • the same principle can also be applied to other optoelectronic modules that require temperature stabilization.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Description

This invention relates to an optoelectronic module containing at least one optoelectronic component and to a method for stabilizing its temperature as set forth in the preambles of the respective independent claims.
From the prior art, for example from EP 0259888, it is known to design optoelectronic modules in such a way that the individual optoelectronic components, such as laser diodes or photodiodes, can be temperature-stabilized. To accomplish this, the active elements, which are formed or mounted on a substrate, are mounted by means of this substrate on a Peltier element, for example. To stabilize the output power and current consumption of, e.g., a laser diode, the substrate with the laser diode is cooled. A thermistor, which also rests on the substrate, is used as a sensor for the Peltier element. The thermistor requires a reference temperature to keep the temperature of the substrate, and thus of the laser diode, for example, stable. So far it has been usual to connect the thermistor directly to the housing by an electric connection. The temperature measurement of the thermistor thus takes place at the housing wall. Such a measurement may result in wrong temperature information being processed, since the housing has a temperature different from that of the substrate.
The optoelectronic module according the invention, with the characterizing features of the first independent claim, has the advantage that the temperature measurement takes place directly on the substrate. The thermistor is connected to the substrate by an electric connection, and the temperature measurement takes place on the substrate, and thus close to the laser diode or photodiode. The extra cost of an additional electric wire connection is offset by the advantages of the assembly. The advantage is a temperature setting at the location of the laser diode itself, based on a temperature measurement which is also made at the location of the laser diode. This makes it possible to achieve very high temperature stability and thus ensure laser stability, which is of great importance for the transmission of high data rates.
By the method according to the invention, with the characterizing features of the second independent claim, temperature control is possible with a high degree of accuracy.
One embodiment of the invention is illustrated in the accompanying drawing and will now be explained in more detail. The figure shows schematically the construction of an optoelectronic module with a housing 1. Inside the housing, a laser diode 2 and a thermistor 4 are mounted on a substrate 9. The substrate 9 rests flat on a Peltier element 6. Indicated beside the laser diode 2 is a monitor photodiode 3 which has an electric connection to a current regulator 5 which in turn is connected to the laser 2. The light emitted by the laser diode 2 is concentrated by a lens 8 and lauchend into an optical fiber. The thermistor 4 is connected by an electric line to a point 10 on the substrate. Its electric lead 11 is brought out through the housing. The thermistor is also connected to a temperature controller which in turn is connected to the Peltier element 6. In this embodiment, the idea of the invention was implemented by connecting the thermistor 4 via an additional electric line to the measuring point 10. This additional electric line permits the reference temperature to be determined at the point 10 rather than at the point where the electric lead 11 is fed through the wall of the housing 1, as is customary in the prior art. With the assembly according to the invention, temperature stabilization at the location of the laser diode is possible with a very high degree of accuracy. The stabilization no longer depends on the temperature of the air surrounding the housing. A high stability of the laser temperature can thus be achieved, thus ensuring the stability necessary for the transmission of high data rates. The same principle can also be applied to other optoelectronic modules that require temperature stabilization.

Claims (3)

  1. An optoelectronic module with a housing (1) containing at least one optoelectronic component (2) to be thermally stabilized, said optoelectronic component (2) being formed or mounted on a substrate (9) and connected to temperature-stabilizing means (6), the temperature being measured by means of an electrical component (4) mounted on the substrate (9), characterized in that the electrical component (4) has a direct electric connection to a point (10) on the substrate (9), which is not located in the area of the substrate on which said electrical component (4) is mounted, and that said point (10) serves as a temperature reference.
  2. An optoelectronic module as claimed in claim 1, characterized in that the electrical component is thermistor.
  3. A method of stabilizing the temperature of an optoelectronic component in an optoelectronic module comprising temperature-stabilizing means (6) and temperature-measuring means (4), characterized in that the measurement of the reference temperature takes place on the substrate surface which also supports an optoelectronic component (2) with help of a direct electrical connection of said temperature-measuring means (4) to a point (10) on the substrate severing as a temperature reference, said point (10) not being located in the area of the substrate on which said temperature-measuring means (4) are mounted.
EP98440107A 1998-05-25 1998-05-25 Optoelectronic module containing at least one optoelectronic component and temperature stabilising method Expired - Lifetime EP0961371B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP98440107A EP0961371B1 (en) 1998-05-25 1998-05-25 Optoelectronic module containing at least one optoelectronic component and temperature stabilising method
DE69801648T DE69801648T2 (en) 1998-05-25 1998-05-25 Optoelectronic module with at least one optoelectronic component and method for temperature stabilization
CA002272178A CA2272178A1 (en) 1998-05-25 1999-05-17 Optoelectronic module and method for stabilizing its temperature
JP11138460A JP2000164968A (en) 1998-05-25 1999-05-19 Photoelectric module and method for stabilizing its temperature
US09/317,222 US6359330B1 (en) 1998-05-25 1999-05-24 Optoelectronic module and method for stabilizing its temperature
US10/013,659 US6528329B2 (en) 1998-05-25 2001-12-13 Method for stabilizing temperature of an optoelectronic module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98440107A EP0961371B1 (en) 1998-05-25 1998-05-25 Optoelectronic module containing at least one optoelectronic component and temperature stabilising method

Publications (2)

Publication Number Publication Date
EP0961371A1 EP0961371A1 (en) 1999-12-01
EP0961371B1 true EP0961371B1 (en) 2001-09-12

Family

ID=8235682

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98440107A Expired - Lifetime EP0961371B1 (en) 1998-05-25 1998-05-25 Optoelectronic module containing at least one optoelectronic component and temperature stabilising method

Country Status (5)

Country Link
US (2) US6359330B1 (en)
EP (1) EP0961371B1 (en)
JP (1) JP2000164968A (en)
CA (1) CA2272178A1 (en)
DE (1) DE69801648T2 (en)

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US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
EP1290733A1 (en) 2000-05-31 2003-03-12 Motorola, Inc. Semiconductor device and method for manufacturing the same
WO2002003437A1 (en) * 2000-06-30 2002-01-10 Motorola, Inc., A Corporation Of The State Of Delaware Hybrid semiconductor structure and device
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
JP4413417B2 (en) * 2000-12-18 2010-02-10 古河電気工業株式会社 Laser diode module
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6810049B2 (en) * 2001-03-02 2004-10-26 The Furukawa Electric Co., Ltd. Semiconductor laser device and semiconductor laser module
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
DE10117020C2 (en) * 2001-04-05 2003-05-08 Unique M O D E Ag Optical or optoelectronic module
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
GB2404281A (en) * 2003-07-25 2005-01-26 Agilent Technologies Inc Optoelectronic assembly with thermoelectric cooler
US7333521B1 (en) * 2003-12-04 2008-02-19 National Semiconductor Corporation Method of sensing VCSEL light output power by monitoring electrical characteristics of the VCSEL
DE102004047682A1 (en) * 2004-09-30 2006-04-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH LED array
US7630422B1 (en) 2005-01-14 2009-12-08 National Semiconductor Corporation Driver for vertical-cavity surface-emitting laser and method
RU2525151C1 (en) * 2013-04-17 2014-08-10 Федеральное государственное унитарное предприятие "ВСЕРОССИЙСКИЙ НАУЧНО-ИССЛЕДОВАТЕЛЬСКИЙ ИНСТИТУТ ОПТИКО-ФИЗИЧЕСКИХ ИЗМЕРЕНИЙ" (ФГУП "ВНИИОФИ") Method for thermal stabilisation of photodiode for measurement of electrical characteristics thereof
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Also Published As

Publication number Publication date
DE69801648D1 (en) 2001-10-18
EP0961371A1 (en) 1999-12-01
JP2000164968A (en) 2000-06-16
CA2272178A1 (en) 1999-11-25
US20020055195A1 (en) 2002-05-09
DE69801648T2 (en) 2002-04-18
US6359330B1 (en) 2002-03-19
US6528329B2 (en) 2003-03-04

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