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EP0684624A1 - Source semi-conductrice d'électrons polarisés de spin et appareil utilisant cette source - Google Patents

Source semi-conductrice d'électrons polarisés de spin et appareil utilisant cette source Download PDF

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Publication number
EP0684624A1
EP0684624A1 EP95107677A EP95107677A EP0684624A1 EP 0684624 A1 EP0684624 A1 EP 0684624A1 EP 95107677 A EP95107677 A EP 95107677A EP 95107677 A EP95107677 A EP 95107677A EP 0684624 A1 EP0684624 A1 EP 0684624A1
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layer
band
substrate
electron
superlattice structure
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EP0684624B1 (fr
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Baba C/O Nec Corporation Toshio
Mizuta C/O Nec Corporation Masashi
Tsunehiko Omori
Yoshimasa Kurihara
Tsutomu Nakanishi
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NEC Corp
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NEC Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0296—Spin-polarised beams

Definitions

  • the present invention relates to a spin polarized electron semiconductor source and an apparatus utilizing the same, and more particularly, to improvement of spin polarization and quantum efficiency in the spin polarized electron semiconductor source.
  • the charged weak bosons couple only chirality-left quarks and leptons. In high energy interactions of massless limit, the chirality equals the helicity.
  • a polarized electron beam therefore, can control weak interactions in high energy experiments, and is expected to play important roles in experiments of e + e- linear colliders.
  • the sensitivities of the experiments increase proportionally to the square of the spin polarization degree. Therefore, a spin polarized electron source as a photocathode by which electrons having as high spin polarization as possible can be extracted is urgently required. Besides the degree of spin polarization, the amount of charge which can be extracted from the spin polarized electron source is important in the collider. Therefore, it is desirable for a spin polarized electron semiconductor source to satisfy a spin polarization close to 100 % for electrons having an aligned spin and a high quantum efficiency for a large current.
  • a spin polarized electron source for extracting spin polarized electrons an example in which the band structure of a bulk semiconductor is utilized is described in a paper (Solid State Communication, Vol. 16, p. 877, 1975) by G. Lan- pel et al.
  • this spin polarized electron semiconductor source a multilayer in which Cesium (Cs) layers and oxygen (O) layers are alternately laminated is deposited on the surface of a p-type GaAs semiconductor to produce a negative electron affinity. Electrons having a maximum spin polarization of 50 % can be extracted from the semiconductor surface by irradiating circularly polarized laser beam having an energy substantially equal to the forbidden band of GaAs.
  • a band for heavy holes and a band for light holes are degenerated in the valence band and therefore a ratio of electrons having a downward spin and electrons having an upward spin is 3 : 1 because of difference in transition probability when electrons are excited from these bands to the conduction band. For this reason, the polarization of 50 % at a maximum can be obtained.
  • a spin polarized electron semiconductor source utilizing strained crystal there is the paper (Physics Letters A., Vol. 158, p. 345, 1991) by T. Nakanishi et al., for example.
  • Fig. 1A shows the structure of such a spin polarized electron semiconductor source utilizing strained crystal.
  • a lattice relaxation layer 102 of p-type GaPAs which has a lattice constant greater than that of a p-type GaAs substrate 101 and no lattice relaxation is provided on the substrate 101, and a thin strained layer 103 of p-type GaAs in which the lattice relaxation is not generated is provided on the lattice relaxation layer 102.
  • a compressive stress acts due to the strain in a direction along the plane in the uppermost GaAs strained layer 103 to align the lattice of the strained layer 103 with the lattice of the relaxation layer 102.
  • the degeneracy of the heavy hole band and the light hole band is removed in the valence band so that the heavy hole band is positioned higher in energy than the light hole band. Therefore, if the energy of exciting light is chosen to be equal to an energy from the heavy hole band to a conduction band, i.e., a forbidden band energy, electrons are excited only from the heavy hole band so that the electrons having completely aligned spin can be obtained. In this manner, the spin polarization of 100 % ought to be achieved in theory.
  • the spin polarization of extracted electrons is lower than 100 % in actual because of extension of bands by thermal energy and spin scattering in the strained crystal.
  • a high polarization of 80 % or above was obtained.
  • a spin polarized electron semiconductor source device using a superlattice structure of a short period is described in, for example, a paper (Physical Review Letters, Vol. 67, p. 3294, 1991) by Omori el at.
  • the structure of the electron semiconductor source device using the superlattice structure is shown in Fig. 1 B.
  • a buffer layer 104 of p-type GaAs there is sequentially formed a buffer layer 104 of p-type GaAs and a block layer 105 of p-type AIGaAs having a wide forbidden band.
  • the buffer layer 104 is formed to provide a flat surface and the block layer 105 is formed to prevent electrons excited in the substrate 101 from going into a superlattice structure 110.
  • the superlattice structure 110 having a short period is formed on the block layer 105.
  • a well layer 112 of p-type GaAs having a thickness equal to or shorter than a wavelength of electron wave and a barrier layer 114 of p-type AIGaAs having a thickness through which an electron can transmit due to the tunnel effect are alternately laminated.
  • a protection layer 120 of As is formed on the superlattice structure 110.
  • the degeneracy for heavy holes and light holes is removed in the superlattice structure 110 and a mini band for the heavy holes and a mini band for the light holes are formed in the valence band due to quantum effect.
  • These mini bands occupy different energy levels because of a great difference in effective mass.
  • the mini band for the heavy holes takes a position higher in energy than that of the mini band for the light holes. Accordingly, if exciting light is chosen to have an energy from the mini band for the heavy holes to a conduction band and is irradiated to the semiconductor source with a circular polarization, electrons can be excited only from the mini band for the heavy holes only and can have completely aligned spins.
  • the quantum efficiency is relatively high, the spin polarization is insufficient.
  • the quantum efficiency is as low as 0.5 % or below because there are defects in the crystal due to the doped impurity and the strained crystal layer cannot be made thicker. In this manner, a high spin polarization and a high quantum efficiency could not be both satisfied simultaneously.
  • An object of the present invention is to provide a spin polarized electron semiconductor source in which a high spin polarization and a high quantum efficiency can be achieved.
  • Another object of the present invention is to provide an apparatus utilizing the above spin polarized electron semiconductor source.
  • a structure of an electron source includes a superlattice structure formed above a substrate, for generating electrons due to input light, and comprising a plurality of layers, in each of which a strained well layer and a barrier layer are laminated, a material of the strained well layer having a lattice constant different from that of a material of the substrate not to have lattice relaxation and having a thickness equal to or less than a wavelength of electron wave, and the barrier layer having a thickness such that an electron can transmit the barrier layer based on tunnel effect and a valence band energy lower than that of the strained well layer, and a surface layer formed on the superlattice structure, for emitting the electrons generated by the superlattice structure.
  • an electron source device includes a vacuum chamber, an electron source provided in the vacuum chamber, wherein the electron source includes a substrate, a block layer for blocking injection of electron from the substrate, a superlattice structure of no lattice relaxation formed on the block layer such that a first layer and a second layer are alternately laminated plural times, one of the first and second layer having a lattice constant different from that of a material of the substrate such that a band for heavy holes and a band for light holes are split and formed, the superlattice structure transiting electrons from the heavy hole band to a conduction band in response to an input light beam, and a surface layer formed on the superlattice structure, for emitting the electrons in the conduction band of the superlattice structure, a power supply having a positive terminal connected to the surface layer and a negative terminal connected to the substrate, for supply a DC voltage to the electron source in a pulse manner, means for forming on the surface layer a layer having a negative electron affinity
  • a structure of an electron source includes a substrate, a block layer for blocking injection of electron from the substrate, a superlattice structure formed on the block layer and having a strain of a lattice structure without lattice relaxation, for forming a band for heavy holes and a band for light holes, electrons being excited from the heavy hole band to a conduction band in response to an input light beam, and a surface layer formed on the superlattice structure, for emitting the electrons excited in the superlattice structure.
  • the superlattice structure is formed by alternately laminating a first layer and a second layer.
  • the first layer the second layer are thin and the superlattice structure has a plurality of short periods of the first and second layers.
  • the first layer is one of the strained well layer and the barrier layer and the second layer is the other.
  • the first layer as the strained well layer has a lattice constant different from that of the substrate such that the super lattice structure has the strain of the lattice structure.
  • At least a part of the barrier layers may be formed of a material having substantially the same lattice constant as that of a material of the substrate or may be formed of a material having a lattice constant such that an average of the lattice constant of the material of the strained well layer and that of a material of the barrier layer is about equal to the lattice constant of the material of the substrate.
  • the strained well layer and the barrier layer may include p-type impurities of substantially the same density, or one of the strained well layer and the barrier layer may be a substantially intrinsic layer and the other may include a p-type impurity.
  • the impurity density is desirably in a range of 5 x 10 16 cm- 3 to 1 x 10 18 cm- 3 .
  • the superlattice structure may have a thickness such that the superlattice structure can utilize the input light sufficiently to excite the electrons from a valence band to a conduction band. If an average of lattice constants of the strained well and barrier is substantially equal to a lattice constance of the substrate, the superlattice structure may be formed to have a thickness enough to utilize an input light beam.
  • the surface layer includes a p-type impurity of a density higher than those of the strained well layer and the barrier layer to provide a proper electron affinity so that the surface layer can accommodate a bent portion of the energy band on a side of the surface layer of the electron source structure when a power is supplied between the substrate and the surface layer.
  • Fig. 2 is a schematic diagram showing the spin polarized electron semiconductor source apparatus according to a first embodiment of the present invention.
  • the apparatus includes a spin polarized electron semiconductor source 20, a power supply 22 for supplying a DC voltage to the semiconductor source 20, and a light exciting apparatus 28 having a laser unit for supplying a light beam having a circular polarization and having a specific energy or wavelength to the semiconductor source 20.
  • the semiconductor source 20 is accommodated in a vacuum chamber 26 and emits spin polarized electrons 42 when a bias is applied to the semiconductor source 20 by the power supply 22 and the light beam is irradiated to the semiconductor source 20 by the light source 28.
  • the emitted electrons 42 are deflected by a deflector 24 and inputted to a measuring apparatus 30 such as a Mott polarization analyzer for measuring spin polarization and a quantum efficiency.
  • the block layer 4 has a thickness of 1 /1.m and a Be acceptor density of 5 x 1018 cm-3 and prevents electrons generated in the substrate 2 from going into the superlattice structure 6.
  • a strained well layer 12 and a barrier layer 14 are alternately laminated.
  • the strained well layer 12 is made of a material having a lattice constant greater than that of the substrate 2 with compressive stress applied inside a plane and has a thickness equal to or less than a wavelength of electron wave.
  • the strained well layer 12 is formed of p-type In o . 15 Ga o . 85 As and has a thickness of 2.0 nm and a Be density of 5 x 10 17 cm- 3 .
  • the barrier layer 14 is formed of the same material as that of the substrate 2 in this embodiment and has a thickness such that an electron can transmit the barrier layer 14.
  • the barrier layer 14 is formed of p-type GaAs has a thickness of 3.1 nm and a Be density of 5 x 10 17 cm- 3 .
  • the strained well layer 12 and the barrier layer 14 constitute a single short period of the superlattice structure 6.
  • the superlattice structure includes a plurality of periods, e.g., 18 periods (corresponding to 91.8 nm) in this embodiment.
  • the surface layer 8 accommodates a bending portion of a band structure of the semiconductor source 20 when the DC voltage is applied and has a thickness of 4.8 nm and a Be density of 4 x 10 19 cm- 3 in this embodiment.
  • a cap layer of As (not shown) is provided on the surface layer 8 for surface passivation in a manufacturing process and it is removed in the measurement.
  • the manufacture of the electron semiconductor source 20 of the present invention is performed at a substrate temperature of 520 ° C using molecular beam epitaxy (MBE) as a crystal growth method.
  • MBE molecular beam epitaxy
  • the block layer 4 of p-type Al o . 35 Ga o . 65 As is formed on the substrate 2 of p-type GaAs of a flat surface to have a thickness of 1 ⁇ m and a Be acceptor density of 5 x 10 18 cm- 3 .
  • the superlattice structure 6 having a plurality of short periods of the strained well layer 12 and the barrier layer 14 which are alternately laminated is formed on the block layer 4.
  • the barrier layer 14 of p-type GaAs is formed to have a thickness of 3.1 nm and a Be density of 5 x 10 17 cm- 3 .
  • An alternate layer of the strained well layer 12 and barrier layer 14 are repeated plural periods, e.g., 18 periods (corresponding to 91.8 nm) in this embodiment.
  • the surface layer 8 of p +- type In 0.15 Ga 0.85 As is formed to have a thickness of 4.8 nm and a Be density of 4 x 10 19 cm- 3 . Thereafter, the temperature of the substrate is cooled to -10 ° C and an As protection film of about 1 ⁇ m is deposited to suppress oxidization of the surface in the atmosphere. Thus, the device is completed.
  • the vacuum chamber 26 was evacuated to the base pressure of about 6 x 10 10 torr. After being introduced into the ultra-high vacuum chamber 26, the semiconductor source 20 was heated up to 400 ° C such that the As protection film was vaporized and removed from the surface so that a clean surface could be obtained. Then, a multilayer of Cs and O was formed on the surface from which the As layer is removed, to obtain a negative electron affinity (NEA). Thereby, the preparation of measurement was completed. The polarization measurement is performed at room temperature. A high voltage is applied to the semiconductor source 20 by the power supply 22 such that the surface layer 8 is at a ground voltage and the substrate 2 is at about -4 kV. As shown in Fig.
  • the light source 28 includes a CW titanium: sapphire laser which is excited by an argon laser and circularly polarized monochromatic light beam of 915 nm with 100 ⁇ W is irradiated from the light source 28 to the semiconductor source 20 through a quarter-wave plate. Electrons extracted from the semiconductor source 20 is accelerated up to 100 keV and deflected by a deflector 24 such that the electrons are inputted to the Mott polarization analyzer 30. As a result when the spin polarization and quantum efficiency of the semiconductor source 20 was measured, a maximum spin polarization of 87 % and a maximum quantum efficiency of 2 % could be obtained. That is, both the high spin polarization and high quantum efficiency could be satisfied simultaneously.
  • mini bands are formed for the heavy holes and light holes due to quantum effect.
  • the degeneracy of heavy hole band and light hole band is removed in the valence band such that these band respectively have different energy levels.
  • the heavy hole has a large effective mass and takes an energy level slightly lower than that of the heavy hole band of crystal GaAs and, therefore, the energy level shift of the heavy hole mini band is not distinguishable.
  • the light hole has a small effective mass and the energy level of the light hole mini band is moved into a low energy level direction with a large extent from the energy level of the crystal GaAs and, therefore, the energy level shift of the light hole mini band is distinguishable.
  • the material of the strained well layer 12 has a lattice constant greater than those of the substrate 2 and the barrier layer 14 so that the strained well layer is strained such that a distance between lattices in a lamination direction is elongated.
  • the energy difference between the heavy hole mini band and the light hole mini band becomes further wider compared to a case of the strained crystal in which the lattices are strained only.
  • the Be density of the strained well layer 12 or the barrier well layer 14 is desirably in a range of 1 x 10 16 to 1 x 10 18 cm-3.
  • the electrons Since the width of mini conduction band is sufficiently wide because the superlattice structure is composed of a plurality of short periods, the electrons have a high electron mobility as in bulk crystal. For this reason, the spin polarized electrons can move to the surface layer 8 with a short time during which they are not subjected to spin scattering. In the surface layer 8, the electrons are accelerated due to a great internal electric field to go out of the semiconductor source 20. In this case, if the acceptor density of the surface layer 8 is as much as strained well or barrier layer, a portion of the superlattice structure 6 is bent as well as the surface layer 8 such that the spin scattering is caused, as shown in Fig. 4A.
  • the bent portion is accommodated only in the surface layer 8 as shown in Fig. 4B.
  • the surface layer 8 it is required for the surface layer 8 to be heavily doped with Be.
  • the acceptor density of the surface layer 8 is too much, the surface layer 8 does not have good match to the Cs-O multilayer with respect to electron affinity.
  • the surface layer 8 is desirable to have the thickness of about 4.8 nm and the Be density in a range of 1 x 10 19 to 1 x 10 20 cm-3.
  • the semiconductor source 20 can be designed to have the photon absorption region thicker than the strained crystal, the exciting light can be utilized effectively so that a high quantum efficiency can be achieved.
  • electrons having a high spin polarization close to 100 % can be taken out with a high quantum efficiency in the spin polarized electron semiconductor source 20 according to the first embodiment of the present invention.
  • the structure diagram shown in Fig. 2 is used and the substrate 2, the block layer 4, a strained well layer 12, the barrier layer 14, and the surface layer 8 are formed of p-type GaAs, p-type AI O . 35 Ga o . r , 5 As, p-type Ino. 15 Gao. 85 As, p-type Al 0.35 Ga 0.65 As, and p +- type In o . 15 Ga o . 85 As, respectively.
  • the manufacturing method of the semiconductor source 20 according to the second embodiment of the present invention was substantially the same as in the first embodiment.
  • the structure of semiconductor source 20 was the same as in the first embodiment other than using the barrier layer 14 of p-type Al 0.35 Ga 0.65 As having a thickness of 3.1 nm and a Be density of 5 x 10 17 cm- 3 .
  • the spin polarization and quantum efficiency of the semiconductor source 20 was measured under a condition of irradiation of 100 ⁇ W in the CW mode using an exciting laser having a wavelength of 830 nm, a maximum spin polarization of 90 % and quantum efficiency of 2 % could be obtained. That is, the spin polarization higher than in the first embodiment could be obtained, resulting in achieving the high performance.
  • the AIGaAs having a forbidden band wider than that a material of the substrate 2 is used as the material of the barrier layer 14 and, therefore, an energy difference between the mini band for the heavy holes and the mini band for the light holes becomes greater than in the first embodiment so that the spin polarization is further more improved than in the first embodiment.
  • the semiconductor spin polarized electron source according to the third embodiment of the present invention will be described below.
  • the substrate 2 the block layer 4, a strained well layer 12, the barrier layer 14, and the surface layer 8 are formed of p-type GaAs, p-type Al 0.35 Ga 0.65 As, p-type Ino. 15 Gao. 85 As, p-type GaP o . 2 As o . 8 , and p +- type In o . 15 Ga o . 85 As, respectively.
  • the manufacturing method of the semiconductor source 20 according to the third embodiment of the present invention was substantially the same as in the first embodiment.
  • the structure of the semiconductor source 20 was the same as in the first embodiment except that the barrier layer 14 of p-type GaP o . 2 As o . 8 having a thickness of 3.1 nm and a Be density of 5 x 10 17 cm- 3 is used and the thickness of superlattice structure layer is 300 nm as a whole.
  • the spin polarization and quantum efficiency of the semiconductor source 20 was measured under a condition of irradiation of 100 ⁇ W in the CW mode using an exciting laser having a wavelength of 880 nm, a maximum spin polarization of 88 % and quantum efficiency of 4 % could be obtained. That is, the spin polarization higher than in the first and the quantum efficiency higher than in the first and second embodiments could be obtained, resulting in achieving the high performance.
  • the barrier layer 14 Since GaP o . 2 As o . 8 having a lattice constant smaller than that of the GaAs substrate 2 is used as the barrier layer 14, if the barrier layer 14 is used in combination with the In O . 15 Ga o . 85 As strained well layer 12 having a lattice constant greater than that of the GaAs substrate 2, the average lattice constant of the strained well layer 12 and the barrier layer 14 can be set to be substantially the same as that of the GaAs substrate 2. As a result, the thickness of the superlattice structure 6 can be made thicker and thicker without the lattice relaxation. For this reason, the quantum efficiency can be improved more than in the first and second embodiments.
  • the spin polarized electron semiconductor source apparatus will be described below.
  • the structure shown in Fig. 1 is used.
  • the substrate 2, the block layer 4, a strained well layer 12, the barrier layer 14, and the surface layer 8 are formed of p-type GaAs, p-type GaAs, intrinsic type In O . 15 Ga o . 85 As, p-type GaAs, and p +- type In 0.15 Ga 0.85 As, respectively.
  • the manufacturing method of the semiconductor source 20 according to the fourth embodiment of the present invention was substantially the same as in the first embodiment.
  • the structure of semiconductor source 20 was the same as in the first embodiment except that the p-type Al 0.35 Ga 0.65 As having a thickness of 3.1 nm and a Be density of 5 x 10 17 cm- 3 is used as the barrier layer 14 and the undoped intrinsic type In O . 15 Ga o . 85 As of 2.0 nm is used as the strained well layer 12.
  • the strained well layer 12 does not contain ionized impurity, there is less recombination which is generated due to any lattice defect caused by the presence of the impurity. This effect influences the quantum efficiency greatly because the probability that excited spin polarization electrons are in the strained well layer 12 is greater than the probability that they are in the barrier layer 14. Therefore, the quantum efficiency higher than in the first embodiments can be obtained.
  • the spin polarized electron semiconductor source apparatus will be described below.
  • the structure shown in Fig. 2 is used and the substrate 2, the block layer 4, a strained well layer 12, the barrier layer 14, and the surface layer 8 are formed of p-type GaAs, p-type Al 0.35 Ga 0.65 As, p-type In O . 15 Ga o . 85 As, undoped intrinsic-type GaAs, and p +- type In O . 15 Ga o . 85 As, respectively.
  • the manufacturing method of the semiconductor source 20 according to the fifth embodiment of the present invention was substantially the same as in the first embodiment.
  • the structure of semiconductor source 20 was the same as in the first except that the undoped intrinsic-type GaAs having a thickness of 3.1 nm is used as the barrier layer 14 and the p-type In O . 15 Ga o . 85 As of 2.0 nm and a BE density of 5 x 10 17 cm- 3 is used as the strained well layer 12.
  • the spin polarization and quantum efficiency of the device was measured under a condition of irradiation of 100 ⁇ W in the CW mode using an exciting laser having a wavelength of 915 nm, a spin polarization of 89 % and quantum efficiency of 2 % could be obtained. That is, the spin polarization higher than in the first embodiment could be obtained, resulting in achieving the high performance.
  • the energy band is bent at many portions in the superlattice structure 6 due to space charge.
  • the bent portions of the energy band makes the effective barrier height against holes higher.
  • the energy difference between the mini band for the heavy holes and the mini band for the light holes becomes greater than in the first embodiment. Therefore, the spin polarization larger than in the first embodiment can be obtained.
  • GaAs only GaAs is used for the substrate.
  • compound semiconductor such as InP, InAs, GaSb, and GaP and element semiconductor such as Si and Ge may be used as the substrate or the other single crystal semiconductor substrate and single crystal metal substrate may be used.
  • GaAs, InGaAs, AIGaAs and GaPAs are shown in the above description as semiconductor material constituting the strained superlattice structure.
  • any combination of semiconductor materials which satisfies the condition indicated in the present invention is possible and that representative compound semiconductor such as InP, InAIAs, InAIGaAs, AIGaPAs, GaSb, AIGaSb, InAs, GaP, GaN, and AsGaN and the other semiconductor may be used.
  • representative compound semiconductor such as InP, InAIAs, InAIGaAs, AIGaPAs, GaSb, AIGaSb, InAs, GaP, GaN, and AsGaN and the other semiconductor may be used.
  • AIGaAs As the block layer only AIGaAs is shown. However, another semiconductor material having an electron affinity smaller than that of the substrate may be used. Further, although only InGaAs is shown as the material of surface layer which is the same as the material of strained well layer, the material of surface layer may be the same as the material of barrier layer or another semiconductor material may be used having electron affinity not so much small compared to that of the material of short period of superlattice. Furthermore, only As is shown as the protection film from oxidization in the atmosphere. However, a material such as Sb and InAs vaporizing at a temperature at which the superlattice structure is not damaged may be used for the protection film.
  • the first to fifth embodiments are disclosed in the present invention. It will be apparent that the semiconductor spin polarized electron source according to the present invention can be realized even in combination of any of the first to fifth embodiments. For instance, in the second to fifth embodiments, two of three conditions, i.e., the composition of barrier layer, presence/absence of strain in the barrier layer, and a layer for impurity to be doped are fixed and only one condition is changed. However, it is apparent that the performance of the device higher than in the first embodiment can be obtained even in a case that two or more conditions are changed.
  • the strained well layer or barrier layer may be divided into a plurality of sublayers which have different compositions as shown in Fig. 6.
  • the strained well layer is formed of a multilayer in which a GaAs sublayer and an InAs sublayer are alternately laminated plural times
  • the barrier layer is formed of a multilayer in which an AlAs sublayer and a GaAs sublayer are alternately laminated plural times.
  • the sublayer structures function as the InGaAs layer and the AIGaAs layer, respectively.
  • the spin polarized electron semiconductor source of the present invention a large amount of electrons having a great spin polarization can be taken out and the operation life can be elongated because the semiconductor spin polarized electron source operates with a weak exciting light intensity.

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EP95107677A 1994-05-27 1995-05-19 Source semi-conductrice d'électrons polarisés de spin et appareil utilisant cette source Expired - Lifetime EP0684624B1 (fr)

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Cited By (2)

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EP1037268A4 (fr) * 1998-07-07 2003-06-11 Japan Science & Tech Corp PROCEDE DE SYNTHESE DE FILMS MINCES DE MONOCRISTAUX D'AlN A FAIBLE RESISTANCE DE TYPES n ET p
CN119297740A (zh) * 2024-10-10 2025-01-10 安徽格恩半导体有限公司 一种GaN基化合物半导体激光器元件

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JP3284239B2 (ja) * 2000-03-07 2002-05-20 東北大学長 スピン偏極伝導電子生成方法および半導体素子
JP2007258119A (ja) * 2006-03-24 2007-10-04 Univ Nagoya スピン偏極電子発生装置
WO2009119074A1 (fr) * 2008-03-25 2009-10-01 国立大学法人名古屋大学 Source d'électrons à spin polarisé
JP6001319B2 (ja) * 2012-05-10 2016-10-05 国立研究開発法人科学技術振興機構 スピン偏極電子発生素子及びその製造方法

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