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EP0499220A1 - Procédé de croissance automatique de la partie col d'un lingot monocristallin - Google Patents

Procédé de croissance automatique de la partie col d'un lingot monocristallin Download PDF

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Publication number
EP0499220A1
EP0499220A1 EP92102297A EP92102297A EP0499220A1 EP 0499220 A1 EP0499220 A1 EP 0499220A1 EP 92102297 A EP92102297 A EP 92102297A EP 92102297 A EP92102297 A EP 92102297A EP 0499220 A1 EP0499220 A1 EP 0499220A1
Authority
EP
European Patent Office
Prior art keywords
crystal
diameter
heater
power supplied
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP92102297A
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German (de)
English (en)
Other versions
EP0499220B1 (fr
Inventor
Kenji Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
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Publication of EP0499220A1 publication Critical patent/EP0499220A1/fr
Application granted granted Critical
Publication of EP0499220B1 publication Critical patent/EP0499220B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

Definitions

  • the present invention relates to an automatic control method for growing single-crystal neck portions by the CZ method.
  • crystal diameter control for neck portions is performed by adjusting the speed of pulling up a crystal
  • such a type of automatic control method used for cone and body portions can be used for the neck portions.
  • crystal diameter control for neck portions is performed by adjusting the temperature of a liquid melt
  • such a type of automatic control method used for cone and body portions can not be used for neck portions. If it is used for neck portions, the diameter control deviation at the neck portions exceeds the acceptable diameter deviation thereof because the acceptable diameter deviation of neck portions is smaller than that of the cone and body portions and because response of the crystal diameter variation to the temperature variation of a melt is substantially slower than that to the speed variation of pulling up a crystal.
  • the present invention achieves such a target by employing the following method (1):
  • the initial temperature of the melt can be set at a proper value, and the target pattern of the crystal diameter can be corrected. Therefore, the effect of the method (1) is enhanced. In other words, if the power supplied to the heater varies less, the method (1) provides a better result of the diameter control.
  • Fig. 1 is a block diagram of an automatic controlling device for growing single-crystal neck portions, the device employing a method according to the present invention.
  • Fig. 2 is a schematic sectional view of an apparatus to which an automatic controlling device for growing single-crystal neck portions employing a method according to the present invention is applied.
  • Fig. 3 is a flow chart, illustrating software of a microcomputer 58 shown in Fig. 1.
  • Fig. 4 is a flow chart, also illustrating software of the microcomputer 58 shown in Fig. 1.
  • Fig. 5 is a flow chart, also illustrating software of the microcomputer 58 shown in Fig. 1.
  • Fig. 6 is a graph showing the crystal diameter target pattern D0(L) determined by a diameter setting unit 42.
  • Fig. 7A is a graph showing three membership functions of the pulling-up speed V: proper, slow, and fast.
  • Fig. 7B is a graph showing three membership functions of the diameter control deviation ⁇ D: proper; negative and large in absolute value (neg. large); and positive and large (pos. large).
  • Fig. 7C is a graph showing three membership functions of the power correction value ⁇ P: no correction is needed (no cor.); negative correction is needed (neg. cor.); and positive correction is needed (pos. cor.).
  • Figs. 8A, 8B and 8C are graphs illustrating calculations for the power correction based on a fuzzy inference rule.
  • a graphite crucible 14 is mounted on a table 12 fixed on the top end of a shaft 10.
  • a quartz crucible 16 is fitted in the graphite crucible 14.
  • the graphite crucible 14 is surrounded by a heater 18 which is surrounded by a graphite heat-insulating member 20.
  • the heater 18 is supplied with electric power, a polycrystalline silicon ingot placed in the quartz crucible 16 becomes a melt 22.
  • a seed crystal 30 is connected by a seed holder 28 to the bottom end of a wire 26.
  • the wire 26 is wound up or down by a motor 24 placed above the melt 22.
  • a silicon single crystal 32 grows from the tip of the seed crystal 30.
  • Growing of the silicon is carried out in a chamber 34.
  • Argon gas is blown down from an upper portion of the chamber 34 to purge the air inside the chamber 34. Because the argon gas is blown against the melt surface 22S and makes it wave, the diameter control for the neck portion of a single crystal having a small diameter becomes more difficult.
  • a CCD camera 38 for observing a diameter D of the bottom portion of the silicon single crystal 32 is placed above a window 36 provided at a shoulder portion of the chamber 34.
  • the CCD camera 38 is positioned so that the optical axis thereof is directed to the center portion of the melt surface 22S.
  • Video signals from the CCD camera 38 are sent to a diameter measuring unit 40 shown in Fig. 1.
  • the diameter measuring unit 40 detects, by means of image processing, the diameter D of a fusion ring formed at the interface between the silicon single crystal 32 and the melt surface 22S, i.e. the diameter D of the bottom portion of the silicon single crystal 32. Since the diameter of the neck portion of the single silicon crystal 32 is small, the CCD camera has a great magnification ratio, e.g. one scanning line corresponding to 0.05 mm of real size, to increase the precision of the measurement.
  • the target diameter is a function of a crystal length L, for example, as shown by a folded line P0Q0ST in Fig. 6.
  • a memory contained in the diameter measuring unit 42 stores target diameters D0(L) expressed by a folded line PST. The reason for this will be explained later.
  • a diameter setting unit 42 outputs a target diameter Do corresponding to a crystal length L inputted thereto.
  • the crystal length L is obtained in the following way: a rotary encoder 44 whose rotational shaft is connected to a drive shaft of the motor 24 outputs pulses; and an up-down counter 46 counts the pulses for the crystal length L.
  • a counted value of the up-down counter 46 is cleared when the seed crystal 30 is at the upper limit position and when the seed crystal 30 contacts the melt surface 22S.
  • the incidence of contact is detected, e.g. by applying voltage between the wire 26 and the shaft 10 and by detecting a current which flows therebetween when the contact is made.
  • a single crystal growing apparatus performs cascade control of the wire pulling-up speed V so as to adjust a crystal diameter D as close to a target diameter D0 as possible.
  • An output voltage EV0 from the PID controller 48 is supplied to a variable-speed motor controller 50 as a target value of the rotational speed of the motor 24.
  • an output from the rotary encoder 44 is converted by an F/V converter 52 to voltage EV proportional to the frequency.
  • the voltage EV is supplied to the variable-speed motor controller 50 as a feed back amount.
  • the variable-speed motor controller 50 is a PID controller.
  • the variable-speed motor controller 50 controls the rotational speed of the motor 24, i.e.
  • the changing over switch 54 selects either an output from the variable-speed motor controller 50 or an output from the a microcomputer 58 to send to the driver 56.
  • the output from the microcomputer 58 is selected for the closed loop control by which the rotational speed of the motor 24 is maintained constant.
  • the diameter D of a crystal depends on the temperature of the melt 22 as well as on the pulling-up speed of the crystal, the response time of a change in the crystal diameter D to a change in the power supplied to the heater 18 is several ten times to several hundred times as long as the response time of a change in the crystal diameter D to a change in the crystal pulling-up speed.
  • the growing time for the thin neck portion is short, and it is required that the diameter control deviation thereof be about as small as +-0.5 mm or smaller. Therefore, to employ the melt temperature to control the crystal diameter D of the neck portion, a special control method, different from the control method used for the cone and body portions, is needed.
  • a single crystal growing apparatus according to the present invention has the below-described construction in which the power supplied to the heater 18 is controlled so that the diameter D of a crystal becomes closer to a target diameter D0.
  • a two-color pyrometer 62 is provided for detecting the temperature of the melt surface 22S. Data of the melt surface temperature outputted by the two-color pyrometer 62 are sent to the microcomputer 58. The microcomputer 58 also receives data of the diameter control deviation ⁇ D, the pulling-up speed V (since the pulling-up speed V is in inverse proportion to the frequency of the pulse from the rotary encoder 44, the speed V is calculated from the frequency measured by software), the crystal length L and a shift ⁇ L, described later, outputted by the diameter setting unit 42.
  • a procedure of control by the microcomputer 58 for growing a single crystal neck portion will be described.
  • the procedure is composed of processes (A) to (C) corresponding to Figs. 3 to 5.
  • ⁇ D the diameter control deviation
  • proper negative and large in absolute value (neg. large); and positive and large (pos. large).
  • the control deviation is supposed to be limited within a range of +-3 mm.
  • Fig. 7A three membership functions are employed, of the pulling-up speed V: proper, slow and fast.
  • the pulling-up speed is restricted within a range of 1 to 5 mm/sec according to this embodiment.
  • Fig. 7C three membership functions of the power correction value ⁇ P are employed: no correction is needed (no cor.); negative correction is needed (neg. cor.); and positive correction is needed (pos. cor.).
  • the power correction is performed in a range corresponding to a range of -3 to 3 of a scale of a power correction dial which is used in manual operation.
  • a fuzzy controlling rule as shown in Table 1 is applied among the above membership functions.
  • the diameter control deviation ⁇ D is negative and large in absolute value and the pulling-up speed V is low (such a condition is expressed as "( ⁇ D:neg.large) AND (V:slow)" hereinafter, other conditions being expressed in the same manner)
  • negative correction is performed.
  • the diameter control deviation ⁇ D is positive and large and the pulling-up speed V is high, positive correction is performed. In the other conditions, no correction is performed.
  • a power correction value ⁇ P0 is obtained from Figs. 7A to 7C and 8A to 8C as described below.
  • the logical sum of the areas shown in Fig.8A and Fig. 8B is obtained as shown in Fig. 8C.
  • the center value of the area as shown in Fig. 8C (the position of a vertical line which divides the area equally into the right and left-side parts) is used as the power correction value ⁇ P0, i.e. -0.375 in this case.
  • the correction value ⁇ P0 is obtained as -0.375 when the no correction needed as well as the negative correction is considered, whereas it is obtained as -1.83, i.e. the position of a center of the shadowed area in Fig. 8A, when the negative correction alone is considered.
  • the pulling-up speed can be easily employed in the diameter control, by handling it substantially equally to the diameter control deviation on the basis of a common idea. Also, determination of the controlling parameters (shapes of the membership functions and the fuzzy inference rule) is easier than that of a controlling constant in PID control.
  • a success in growing a crystal neck portion theoretically means obtaining a crystal neck portion having no dislocation. Whether or not a crystal can be made free from dislocations depends not only on the shape of the crystal but on other conditions. However, since this embodiment performs the diameter control, the effects thereof should be judged, based solely on the crystal shape. Therefore, in the description below, a success in controlling the growth of a crystal neck portion means obtaining a crystal whose diameter is in a range from 2.5 to 4 mm and whose length is not less than 10 mm.
  • the present invention is intended to cover various modifications.
  • a curve such as Gaussian distribution may be employed.
  • the fuzzy inference rule shown in Table 1 is preferable, it does not restrict the present invention.
  • the present invention is characterized in that a fuzzy controlling is performed for correction of the power supplied to the heater and that the pulling-up speed is employed as a factor in the fuzzy controlling.
  • the above calculation method Figs. 8A to 8C, i.e. a min-max method, according to the fuzzy inference rule does not restrict the present invention.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Feedback Control In General (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
EP92102297A 1991-02-14 1992-02-12 Procédé de croissance automatique de la partie col d'un lingot monocristallin Expired - Lifetime EP0499220B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3042640A JPH0717475B2 (ja) 1991-02-14 1991-02-14 単結晶ネック部育成自動制御方法
JP42640/91 1991-02-14

Publications (2)

Publication Number Publication Date
EP0499220A1 true EP0499220A1 (fr) 1992-08-19
EP0499220B1 EP0499220B1 (fr) 1995-06-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP92102297A Expired - Lifetime EP0499220B1 (fr) 1991-02-14 1992-02-12 Procédé de croissance automatique de la partie col d'un lingot monocristallin

Country Status (4)

Country Link
US (1) US5288363A (fr)
EP (1) EP0499220B1 (fr)
JP (1) JPH0717475B2 (fr)
DE (1) DE69202996T2 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4301072A1 (de) * 1993-01-16 1994-07-21 Leybold Ag Verfahren und Vorrichtung zum Ziehen von Einkristallen aus einer Schmelze
EP0747512A3 (fr) * 1995-06-07 1997-08-20 Memc Electronic Materials Procédé d'élimination des dislocations dans le col d'un lingot monocristallin
EP0745830A3 (fr) * 1995-06-02 1998-05-20 MEMC Electronic Materials, Inc. Système et méthode pour contrÔler la croissance d'un monocristal de silicium
WO1999050482A1 (fr) * 1998-04-01 1999-10-07 Memc Electronic Materials, Inc. Procede et systeme a boucle ouverte utilises pour surveiller la croissance de cristaux de semi-conducteurs
WO2000056956A1 (fr) * 1999-03-22 2000-09-28 Memc Electronic Materials, Inc. Procede et appareil de regulation du diametre d'un cristal de silicium lors d'un processus de tirage
WO2001029292A1 (fr) * 1999-10-19 2001-04-26 Memc Electronic Materials, Inc. Procede de regulation de la croissance d'un cristal semi-conducteur
WO2001057294A1 (fr) * 2000-02-01 2001-08-09 Memc Electronic Materials, Inc. Procede permettant de regler la croissance d'un cristal de silicium de maniere a reduire la vitesse de croissance et les variations de diametre
WO2003021011A1 (fr) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Processus d'elimination des dislocations du col pendant la croissance cristalline par tirage czochralski
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
CN100346010C (zh) * 2005-05-13 2007-10-31 中国科学院上海硅酸盐研究所 一种熔体晶体实时观察系统

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2525300B2 (ja) * 1991-08-19 1996-08-14 信越半導体株式会社 シリコン単結晶の製造方法
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
US6226032B1 (en) 1996-07-16 2001-05-01 General Signal Corporation Crystal diameter control system
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
US5935321A (en) * 1997-08-01 1999-08-10 Motorola, Inc. Single crystal ingot and method for growing the same
US5922127A (en) * 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller
US5882402A (en) * 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
JP4173216B2 (ja) * 1998-02-02 2008-10-29 株式会社Ｓｕｍｃｏ 単結晶の製造方法
US6171391B1 (en) 1998-10-14 2001-01-09 Memc Electronic Materials, Inc. Method and system for controlling growth of a silicon crystal
JP2006056780A (ja) * 2005-11-07 2006-03-02 Sumco Corp 単結晶の製造方法および装置
US20200002839A1 (en) * 2018-06-28 2020-01-02 Global Wafers Co., Ltd. Monitoring a moving average of the ingot neck pull rate to control the quality of the neck for ingot growth
CN115584557A (zh) * 2022-11-08 2023-01-10 晶科能源股份有限公司 一种温度控制方法和设备、单晶炉
CN119392355B (zh) * 2024-10-25 2025-09-02 中环领先(徐州)半导体材料有限公司 单晶生长的方法、单晶生长设备及其控制装置

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EP0294311A1 (fr) * 1987-06-05 1988-12-07 Shin-Etsu Handotai Company Limited Réglage automatique du diamètre d'un barreau cristallin

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FR2071788A5 (fr) * 1969-11-26 1971-09-17 Ibm
US3958129A (en) * 1974-08-05 1976-05-18 Motorola, Inc. Automatic crystal diameter control for growth of semiconductor crystals
EP0294311A1 (fr) * 1987-06-05 1988-12-07 Shin-Etsu Handotai Company Limited Réglage automatique du diamètre d'un barreau cristallin

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485802A (en) * 1993-01-16 1996-01-23 Leybold Aktiengesellschaft Method and apparatus for pulling monocrystals from a melt
DE4301072A1 (de) * 1993-01-16 1994-07-21 Leybold Ag Verfahren und Vorrichtung zum Ziehen von Einkristallen aus einer Schmelze
CN1079847C (zh) * 1995-06-02 2002-02-27 Memc电子材料有限公司 用于控制硅单晶生长的系统和方法
EP0745830A3 (fr) * 1995-06-02 1998-05-20 MEMC Electronic Materials, Inc. Système et méthode pour contrÔler la croissance d'un monocristal de silicium
EP0747512A3 (fr) * 1995-06-07 1997-08-20 Memc Electronic Materials Procédé d'élimination des dislocations dans le col d'un lingot monocristallin
WO1999050482A1 (fr) * 1998-04-01 1999-10-07 Memc Electronic Materials, Inc. Procede et systeme a boucle ouverte utilises pour surveiller la croissance de cristaux de semi-conducteurs
WO2000056956A1 (fr) * 1999-03-22 2000-09-28 Memc Electronic Materials, Inc. Procede et appareil de regulation du diametre d'un cristal de silicium lors d'un processus de tirage
US6776840B1 (en) 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
WO2001029292A1 (fr) * 1999-10-19 2001-04-26 Memc Electronic Materials, Inc. Procede de regulation de la croissance d'un cristal semi-conducteur
US6726764B2 (en) 2000-02-01 2004-04-27 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
WO2001057294A1 (fr) * 2000-02-01 2001-08-09 Memc Electronic Materials, Inc. Procede permettant de regler la croissance d'un cristal de silicium de maniere a reduire la vitesse de croissance et les variations de diametre
WO2003021011A1 (fr) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Processus d'elimination des dislocations du col pendant la croissance cristalline par tirage czochralski
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
CN100346010C (zh) * 2005-05-13 2007-10-31 中国科学院上海硅酸盐研究所 一种熔体晶体实时观察系统

Also Published As

Publication number Publication date
DE69202996D1 (de) 1995-07-27
EP0499220B1 (fr) 1995-06-21
DE69202996T2 (de) 1995-11-16
JPH04260688A (ja) 1992-09-16
JPH0717475B2 (ja) 1995-03-01
US5288363A (en) 1994-02-22

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