EP0375402B1 - Enveloppe en quartz pour lampe avec feuille en molybdène pourvue d'une surface résistant à l'oxydation réalisée par implantation ionique - Google Patents
Enveloppe en quartz pour lampe avec feuille en molybdène pourvue d'une surface résistant à l'oxydation réalisée par implantation ionique Download PDFInfo
- Publication number
- EP0375402B1 EP0375402B1 EP19890313370 EP89313370A EP0375402B1 EP 0375402 B1 EP0375402 B1 EP 0375402B1 EP 19890313370 EP19890313370 EP 19890313370 EP 89313370 A EP89313370 A EP 89313370A EP 0375402 B1 EP0375402 B1 EP 0375402B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- oxidation
- molybdenum
- inhibiting
- molybdenum foil
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims description 66
- 229910052750 molybdenum Inorganic materials 0.000 title claims description 66
- 239000011733 molybdenum Substances 0.000 title claims description 66
- 239000011888 foil Substances 0.000 title claims description 48
- 230000003647 oxidation Effects 0.000 title claims description 47
- 238000007254 oxidation reaction Methods 0.000 title claims description 47
- 239000010453 quartz Substances 0.000 title claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 24
- 238000005468 ion implantation Methods 0.000 title claims description 9
- 230000002401 inhibitory effect Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 17
- 239000002344 surface layer Substances 0.000 claims description 12
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001430 chromium ion Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 description 6
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 150000005309 metal halides Chemical class 0.000 description 3
- -1 tungsten halogen Chemical class 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical class [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/36—Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
- H01J61/366—Seals for leading-in conductors
- H01J61/368—Pinched seals or analogous seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
- H01J5/32—Seals for leading-in conductors
- H01J5/38—Pinched-stem or analogous seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
- H01J5/46—Leading-in conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/28—Manufacture of leading-in conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/32—Sealing leading-in conductors
- H01J9/323—Sealing leading-in conductors into a discharge lamp or a gas-filled discharge device
- H01J9/326—Sealing leading-in conductors into a discharge lamp or a gas-filled discharge device making pinched-stem or analogous seals
Definitions
- This invention relates to electric lamps that utilize quartz lamp envelopes and, more particularly, to quartz lamp envelopes that utilize molybdenum components which are treated to inhibit oxidation.
- Quartz is commonly used as a lamp envelope material in metal halide lamps and tungsten halogen incandescent lamps.
- the quartz envelope defines a sealed lamp interior containing a filament or discharge electrodes and a suitable chemical fill. Electrical energy is supplied to the filament or to the electrodes by means of electrical feedthroughs which pass through the lamp envelope and are hermetically sealed to the quartz. It is critical to lamp operation that the seal remains intact throughout the life of the lamp.
- quartz lamp envelopes It has been customary in quartz lamp envelopes to utilize a feedthrough configuration including a molybdenum ribbon, or foil, which passes through a press or pinch seal region of the quartz envelope.
- the molybdenum foil is sufficiently wide to conduct the required lamp current and is extremely thin. Since the molybdenum foil is very thin, its thermal expansion is extremely small. Thus, the probability of seal failure due to differential thermal expansion is small.
- the quartz is press sealed to the molybdenum foil, and a molybdenum electrical lead is welded to the external end of the foil.
- the molybdenum foil and the molybdenum electrical lead have a tendency to oxidize to form MoO 2 and MoO 3 molybdenum oxides.
- the molybdenum oxides initially form on the external electrical leads.
- the oxidation then progresses to the molybdenum foil and causes a significant amount of stress on the press seal.
- the stress is evident from Newton rings which appear at the point at which the leads are welded to the molybdenum foil.
- the quartz press seal cracks, thereby causing the lamp to fail.
- chromium is deposited on the molybdenum in a very high temperature pack cementation process. This is a very dangerous and inconvenient process. Pure hydrogen is passed through a tube furnace at 1200°C to initiate a reaction. The yield is very low, and devices are often damaged.
- FR-A-2 449 968 It is known from FR-A-2 449 968 to provide a method of making a lamp assembly comprising the steps of: providing a molybdenum foil strip having an oxidation inhibiting layer; and sealing the molybdenum foil strip into a press seal of a quartz lamp envelope to form an electrical feed-through to a sealed lamp interior.
- the method of the present invention is characterised in that the oxidation-inhibiting layer is formed by embedding oxidation-inhibiting material into a surface layer within the bulk of the molybdenum foil strip prior to sealing the molybdenum foil strip into the press seal.
- the oxidation-inhibiting material is applied to the molybdenum foil feedthrough by ion implantation.
- the oxidation-inhibiting material can be selected from the group consisting of chromium, aluminum, silicon, titanium, tantalum, palladium and combinations of these elements. Preferred materials include chromium and aluminum.
- the thickness of the surface layer is typically in the range of 2 to 10 nm (20 to 100 angstroms).
- the lamp assembly typically includes an external molybdenum electrical lead connected to the molybdenum foil.
- the electrical lead has an oxidation-inhibiting coating thereon.
- the oxidation-inhibiting coating may be formed by plasma-enhanced chemical vapour deposition.
- Preferred materials include silicon carbide, silicon nitride and combinations thereof. Since the molybdenum electrical lead does not extend into the press seal, the added thickness is not detrimental to seal integrity.
- the method of the present invention preferably includes the additional steps of forming an oxidation-inhibiting coating on an external electrical lead by plasma-enhanced chemical vapour deposition and attaching the coated electrical lead to the molybdenum foil strip.
- the electrical lead may have an oxidation-inhibiting material embedded into a surface layer thereof.
- the surface layer can be formed by ion implantation of the materials identified above in connection with the treatment of the molybdenum foil feedthrough.
- a lamp assembly 10 includes a quartz lamp envelope 12 which encloses a sealed lamp interior 14.
- An incandescent filament 16 is mounted within the lamp interior 14 and is connected to electrical feedthroughs 18 and 20 which extend through a press seal region 22 of the lamp envelope 12 for connection to an external source of electrical energy.
- the feedthrough 18 includes a molybdenum ribbon, or foil, 24 and a molybdenum electrical lead 26.
- the feedthrough 18 includes a molybdenum foil 30 and a molybdenum electrical lead 32.
- the electrical leads 26 and 32 are typically welded to molybdenum foils 24 and 30, respectively.
- Opposite ends of filament 16 are electrically connected to foils 24 and 30.
- the quartz of the lamp envelope 12 is sealed to foils 24 and 30 using a conventional press seal process so that the lamp interior 14 is isolated from the external environment.
- a metal halide discharge lamp utilizing a quartz lamp envelope is shown in FIG. 2.
- a generally cylindrical quartz lamp envelope 40 includes press seals 42 and 44 at opposite ends thereof.
- Discharge electrodes 46 and 48 are coupled by electrode rods 50 and 52 to molybdenum foils 54 and 56, respectively.
- Molybdenum electrical leads 58 and 60 which are coupled to molybdenum foils 54 and 56, respectively, provide means for connection of the electrodes to an external electrical source.
- the molybdenum foils 54 and 56 are located in press seals 42 and 44, respectively.
- quartz lamp assemblies can have various sizes, shapes and electrode or filament configurations.
- a common feature is a press or pinch seal with a molybdenum foil which acts as an electrical feedthrough.
- the width of the molybdenum foil is selected to carry the lamp operating current; and the thickness of the molybdenum foil is typically about 330 ⁇ m (0.013 inch).
- An oxidation-inhibiting material is embedded in a surface layer of molybdenum foils 24, 30, 54, 56.
- the oxidation-inhibiting material is embedded in the surface of the molydenum rather than forming a separate coating or surface layer. Therefore, the oxidation-ihibiting material does not increase the thickness of the molybdenum foils. As noted hereinabove, an increase in thickness is detrimental to seal integrity since it increases the probability of cracking caused by differential thermal expansion.
- the oxidation-inhibiting material is embedded in the surface layer of the molybdenum foils by ion implantation.
- Ion implantation is a well-known technique for introducing impurities into a bulk material such as a semiconductor or a metal.
- a beam of ions is generated in a source and is directed with varying degrees of acceleration toward the target.
- the momentum of the ions causes them to be embedded in the material of the target.
- the depth of penetration depends on the energy of the ions.
- An important advantage of ion implantation is that the ions of the oxidation-inhibiting material penetrate into the bulk of the molybdenum and do not increase its thickness.
- Suitable oxidation-inhibiting materials include chromium, aluminum, silicon, titanium, tantalum, palladium and combinations of those metals. Preferred materials include chromium, aluminum and combinations thereof.
- the surface layer in which the oxidation-inhibiting material is embedded has a thickness in the range of 2 to 10 nm (20 to 100 angstroms). The ion energy during implantation is selected to achieve the desired surface layer thickness. In an example of the ion implantation procedure, chromium ions are embedded into the molybdenum foil at an energy of 50 keV and a dose of 1 x 10 21 /m 2 .
- Quartz press seals with molybdenum ribbons treated with chromium and aluminum have remained unchanged for over 100 hours at 650°C, while untreated control foils failed at an average of 5 to 10 hours.
- a press seal is considered to have failed when a crack forms through the seal.
- the molybdenum electrical leads 26, 32, 58, 60 that are attached to the external ends of the molybdenum foils can be provided with an oxidation-inhibiting surface layer using ion implantation in the same manner described hereinabove in connection with the molybdenum foils. It is important to provide oxidation-resistant surfaces on the electrical leads 26, 32, 58 and 60 even though the leads are outside the press seal, since oxidation progresses along the leads to the press seal, thereby causing seal failure.
- an oxidation-inhibiting coating is applied to the molybdenum electrical leads by plasma-enhanced chemical vapour deposition (PECVD).
- PECVD is a known process in which a coating is deposited on the surface of a substrate by means of a plasma. The thickness of the coating is determined by the deposition time, and the composition is determined by the plasma composition.
- One advantage of the PECVD process is that the coating is uniformly applied to the surface of the electrical leads.
- Suitable materials for PECVD coating of molybdenum electrical leads include silicon carbide and silicon nitride.
- the oxidation-inhibiting coating has a thickness in the range of about 5 to 100 nm (50 to 1000 angstroms).
- the preferred coating is silicon carbide.
- Silicon carbide coating of components by PECVD can be obtained from Spire Corporation of Bedford, Massachusetts. Molybdenum samples coated with silicon carbide have withstood temperatures up to 700°C in air for over 150 hours without any change, while untreated control samples of molybdenum last for only one hour under the same conditions before oxidizing.
- the quartz lamp envelope is fabricated with molybdenum foils that are ion implanted with chromium, aluminum or combinations thereof to a depth of 2 to 10 nm (20 to 100 angstroms).
- the molybdenum electrical leads have a coating of silicon carbide deposited by PECVD. This combination provides very high resistance to oxidation and does not require changes in the lamp production process.
- the oxidation-inhibiting materials are applied to the foils and to the electrical leads prior to the lamp assembly process. Oxidation of the molybdenum lamp components is significantly reduced, thereby allowing the lamp to have a much longer life with considerably fewer failures caused by molybdenum oxidation.
- the present invention as claimed provides an improved method of making quartz lamp assemblies; having reliable, long-life press seals; furthermore, having feedthrough components with oxidation-resistant surfaces; in particular having oxidation-resistant molybdenum feedthrough foils; and further having external molybdenum electrical leads with oxidation-resistant surfaces.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
- Semiconductor Lasers (AREA)
- Physical Vapour Deposition (AREA)
Claims (11)
- Procédé de fabrication d'un ensemble de lampe comprenant les étapes suivantes :caractérisé en ce quedisposer une bande d'une feuille de molybdène (24, 30 ; 54, 56) ayant une couche d'inhibition de l'oxydation ;sceller la bande de la feuille de molybdène à l'intérieur d'un scellement par pincement (22 ; 42, 44) d'une ampoule (12 ; 40) en quartz d'une lampe pour former un passage d'alimentation électrique vers l'intérieur scellé de la lampe,
la dite couche d'inhibition de l'oxydation est formée par encastrement d'un matériau d'inhibition de l'oxydation à l'intérieur d'une couche de surface à l'intérieur du volume de la bande de la feuille de molybdène préalablement au scellement de la bande de la feuille de molybdène à l'intérieur du scellement par pincement. - Procédé selon la revendication 1, dans lequel le matériau d'inhibition de l'oxydation est choisi dans le groupe comprenant le chrome, l'aluminium, le silicium, le titane, le tantale et le palladium.
- Procédé selon la revendication 2, dans lequel le matériau d'inhibition de l'oxydation est choisi parmi deux ou plus des matériaux du groupe comprenant le chrome, l'aluminium, le silicium, le titane, le tantale et le palladium.
- Procédé selon l'une quelconque des revendications 1, 2 ou 3, dans lequel la dite couche de surface dans laquelle est encastré le matériau d'inhibition de l'oxydation présente une épaisseur compris entre 2 et 10 nm (entre 20 et 100 Angströms).
- Procédé selon l'une quelconque des revendications précédentes, dans lequel le matériau d'inhibition de l'oxydation est encastré par le processus d'implantation des ions.
- Procédé selon la revendication 5, dans lequel des ions de chrome sont encastrés à l'intérieur de la dite bande de la feuille de molybdène (24, 30 ; 54, 56) sous une énergie de 50 keV et une dose de 1 x 1021/m2.
- Procédé selon l'une quelconque des revendications précédentes, dans lequel un revêtement d'inhibition de l'oxydation est formé sur une entrée électrique extérieure de courant (26, 32 ; 58, 60), qui est fixée à la dite bande de la feuille de molybdène (24, 30; 54, 56) avant le scellement de la dite bande à l'intérieur du scellement par pincement (22 ; 42, 44).
- Procédé selon la revendication 7, dans lequel le matériau utilisé pour former le revêtement d'inhibition de l'oxydation est un carbure de silicium et/ou un nitrure de silicium.
- Procédé selon la revendication 7 ou 8, dans lequel le dit revêtement d'inhibition de l'oxydation est formé par dépôt de vapeur chimique amélioré par plasma.
- Procédé selon la revendication 9, dans lequel le dit revêtement d'inhibition de l'oxydation présente une épaisseur comprise entre 5 et 100 nm (50 et 1000 Angströms).
- Procédé selon l'une quelconque des revendications 1 à 6, dans lequel un matériau d'inhibition de l'oxydation est encastré à l'intérieur une entrée électrique externe de courant (26, 32 ; 58, 60) qui est fixée à la dite bande de la feuille de molybdène (24, 30; 54, 56) avant de sceller la dite bande à l'intérieur du scellement par pincement (22 ; 42, 44).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28775588A | 1988-12-21 | 1988-12-21 | |
| US287755 | 1988-12-21 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0375402A2 EP0375402A2 (fr) | 1990-06-27 |
| EP0375402A3 EP0375402A3 (fr) | 1991-03-27 |
| EP0375402B1 true EP0375402B1 (fr) | 1998-03-18 |
Family
ID=23104197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19890313370 Expired - Lifetime EP0375402B1 (fr) | 1988-12-21 | 1989-12-20 | Enveloppe en quartz pour lampe avec feuille en molybdène pourvue d'une surface résistant à l'oxydation réalisée par implantation ionique |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0375402B1 (fr) |
| JP (1) | JPH02267850A (fr) |
| CA (1) | CA2006129C (fr) |
| DE (1) | DE68928611T2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7764019B2 (en) | 2005-07-26 | 2010-07-27 | Koninklijke Philips Electronics N.V. | Lamp and method of manufacturing a lamp |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0657912B1 (fr) * | 1993-12-08 | 1998-04-01 | Ushiodenki Kabushiki Kaisha | Procédé de connection d'une feuille de molybdène à une portion d'un conducteur de molybdène et méthode de production d'une pièce de lampe hermétiquement incluse utilisant ledit procédé |
| CN1298014C (zh) * | 1998-08-13 | 2007-01-31 | 皇家菲利浦电子有限公司 | 其外部电流导线涂有涂层的电灯 |
| US7888872B2 (en) * | 2004-09-30 | 2011-02-15 | Koninklijke Philips Electronics N.V. | Electric lamp |
| DE102007059340B4 (de) | 2006-12-19 | 2019-10-24 | Osram Gmbh | Stromzuführungssystem |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7501272A (nl) * | 1975-02-04 | 1976-08-06 | Philips Nv | Electrische lamp. |
| JPS5544786A (en) * | 1978-09-27 | 1980-03-29 | Hitachi Ltd | Pressure sensor |
| NL183794B (nl) * | 1979-02-26 | Philips Nv | Hogedrukkwikontladingslamp. | |
| GB8429740D0 (en) * | 1984-11-24 | 1985-01-03 | Emi Plc Thorn | Lead wires in pinch seals |
| DE3731531A1 (de) * | 1986-09-20 | 1988-04-07 | Fraunhofer Ges Forschung | Verfahren zur erweiterung der aufloesung einer zeilen- oder matrixkamera |
-
1989
- 1989-12-20 EP EP19890313370 patent/EP0375402B1/fr not_active Expired - Lifetime
- 1989-12-20 DE DE1989628611 patent/DE68928611T2/de not_active Expired - Fee Related
- 1989-12-20 CA CA 2006129 patent/CA2006129C/fr not_active Expired - Fee Related
- 1989-12-21 JP JP32980489A patent/JPH02267850A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7764019B2 (en) | 2005-07-26 | 2010-07-27 | Koninklijke Philips Electronics N.V. | Lamp and method of manufacturing a lamp |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0375402A2 (fr) | 1990-06-27 |
| CA2006129A1 (fr) | 1990-06-21 |
| EP0375402A3 (fr) | 1991-03-27 |
| DE68928611T2 (de) | 1998-11-12 |
| JPH02267850A (ja) | 1990-11-01 |
| DE68928611D1 (de) | 1998-04-23 |
| CA2006129C (fr) | 1994-03-08 |
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