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EP0173808A1 - Circuit de commande de panneaux d'affichage à cristaux liquides - Google Patents

Circuit de commande de panneaux d'affichage à cristaux liquides Download PDF

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Publication number
EP0173808A1
EP0173808A1 EP85107726A EP85107726A EP0173808A1 EP 0173808 A1 EP0173808 A1 EP 0173808A1 EP 85107726 A EP85107726 A EP 85107726A EP 85107726 A EP85107726 A EP 85107726A EP 0173808 A1 EP0173808 A1 EP 0173808A1
Authority
EP
European Patent Office
Prior art keywords
display
voltage
segment
segments
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP85107726A
Other languages
German (de)
English (en)
Inventor
Friedrich Füldner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deutsche Thomson Brandt GmbH
Original Assignee
Deutsche Thomson Brandt GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche Thomson Brandt GmbH filed Critical Deutsche Thomson Brandt GmbH
Publication of EP0173808A1 publication Critical patent/EP0173808A1/fr
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G1/00—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data
    • G09G1/06—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data using single beam tubes, e.g. three-dimensional or perspective representation, rotation or translation of display pattern, hidden lines, shadows
    • G09G1/14—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data using single beam tubes, e.g. three-dimensional or perspective representation, rotation or translation of display pattern, hidden lines, shadows the beam tracing a pattern independent of the information to be displayed, this latter determining the parts of the pattern rendered respectively visible and invisible
    • G09G1/18—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data using single beam tubes, e.g. three-dimensional or perspective representation, rotation or translation of display pattern, hidden lines, shadows the beam tracing a pattern independent of the information to be displayed, this latter determining the parts of the pattern rendered respectively visible and invisible a small local pattern covering only a single character, and stepping to a position for the following character, e.g. in rectangular or polar co-ordinates, or in the form of a framed star

Definitions

  • the invention is based on a circuit arrangement as defined in the preamble in the claim.
  • LC displays which consist of many segments, are controlled in multiplex mode.
  • the individual segments and their counter electrodes are combined in a matrix.
  • each individual segment can be displayed by applying an alternating voltage, in that two opposing segments are activated simultaneously.
  • Microprocessors are used to control the segments of the LC display, and the corresponding control voltages are applied to their outputs.
  • the control voltages reach the LC display unit via LCD driver ICs.
  • the advantage of the invention lies in the low manufacturing costs and in a higher reliability.
  • FIG. 1a shows the electrodes of the same shape opposite the segments of FIG. 1a, which can be controlled via so-called common lines C1 to C4, these segments also being combined into groups.
  • the lines S1 to S10 and C1 to C4 are arranged in a matrix, so that each individual element of the display can be controlled separately and individually. Only the element to which the corresponding control voltage is present via lines S1 to S10 and C1 to C4 is always displayed.
  • FIGS. 2a-h The control voltages for the segment lines S1 and S2 and the common lines C1 to C4 are shown in FIGS. 2a-h.
  • a character formed from the segments can be displayed by the phase relationship of the signals on lines S1 and S2 with respect to the phase relationship of the signals on lines C1 to C4.
  • the mark "TUNING” and "FM” will come to the display, since the voltages according to Figures 2a and 2e, and FIG have mutually 2b and 2e the right for a display Phesenlage. (Fig.g, h)
  • FIG. 3 a Heidelberg constructed according to the feature of the invention is shown.
  • An LC display 1 with the inputs C1 to C4 and S1 to S10 is connected to a control unit 2.
  • At the output A1 of the microprocessor 2 there is a square wave of constant amplitude and phase, which are switched cyclically via the analog switch 3 to the inputs C1 to C4 of the LC display.
  • the analog switches 3 are controlled via control outputs A2 to A5, as a result of which the display is multiplexed.
  • the example shown is a microprocessor with open-drain outputs, for which a pull-up resistor 4 is required.
  • voltage dividers 5 are connected to the operating voltage, at the dividing points of which the output A1 of the control unit 2 is connected via the analog switch 3.
  • the analog switches 3 shown can be omitted if a microprocessor with tri-state outputs is used.
  • the inputs S1 to S10 of the display are connected to the outputs B1 to B10 of the microprocessor.
  • the inputs S1 to S10 are connected to taps of voltage dividers 6 and via resistors 7 to the outputs B1 to B10 of the control unit 2.
  • the LC display is effective at a certain voltage UD between the intersection of a segment line and a common line and e.g. switched off at 1/3 of this voltage UD. This is called 1/3 bias.
  • the voltage dividers 5 for the common lines C1 to C4 and the voltage dividers 6 for the segment lines S1 to S10 are to be dimensioned such that a voltage swing of 4/3 of the voltage UD arises at the taps for the common lines C1 to C4, so that between common - And segment line either the full display voltage UD or 1/3 UD arises.
  • a display voltage UD of e.g. 3 volts the potential on the common line must change between 4 volts and 0 volts if the potential of the segment line changes between 1 volt and 3 volts.
  • FIG. 4 shows a dimensioning example for the voltage dividers 5 and 6, with which the required voltages can be generated.
  • the A outputs and the B outputs are connected to the taps of the voltage dividers 5 and 6.
  • the resistors 14 and 7 are, depending on the switching state of the stages 12 ', 13' at the outputs A and B, at the positive operating voltage + U in parallel with the resistor 8 or 10, or in parallel with the reference potential Resistors 9 and 11 or the resistors 14 and 7 are switched off with a high homing.
  • the voltage swing on the common line 4/3 is the display voltage UD, i.e. 4 volts. Since the undervoltage only drops to 0.5 volts, the upper voltage has to be raised to 4.5 volts.
  • the example shown relates to an LC display with 4 common and 10 segment lines. Of course, any combination of the number of segment and common lines can be used.

Landscapes

  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
EP85107726A 1984-07-28 1985-06-22 Circuit de commande de panneaux d'affichage à cristaux liquides Withdrawn EP0173808A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843427986 DE3427986A1 (de) 1984-07-28 1984-07-28 Schaltungsanordnung zur ansteuerung von fluessigkristall-anzeigen
DE3427986 1984-07-28

Publications (1)

Publication Number Publication Date
EP0173808A1 true EP0173808A1 (fr) 1986-03-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP85107726A Withdrawn EP0173808A1 (fr) 1984-07-28 1985-06-22 Circuit de commande de panneaux d'affichage à cristaux liquides

Country Status (2)

Country Link
EP (1) EP0173808A1 (fr)
DE (1) DE3427986A1 (fr)

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005078693A3 (fr) * 2004-02-03 2005-10-13 Idc Llc Dispositif de reglage de tension d'une commande
US7250315B2 (en) 2002-02-12 2007-07-31 Idc, Llc Method for fabricating a structure for a microelectromechanical system (MEMS) device
US7256922B2 (en) 2004-07-02 2007-08-14 Idc, Llc Interferometric modulators with thin film transistors
US7291921B2 (en) 2003-09-30 2007-11-06 Qualcomm Mems Technologies, Inc. Structure of a micro electro mechanical system and the manufacturing method thereof
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7349136B2 (en) 2004-09-27 2008-03-25 Idc, Llc Method and device for a display having transparent components integrated therein
US7369296B2 (en) 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7369292B2 (en) 2006-05-03 2008-05-06 Qualcomm Mems Technologies, Inc. Electrode and interconnect materials for MEMS devices
US7373026B2 (en) 2004-09-27 2008-05-13 Idc, Llc MEMS device fabricated on a pre-patterned substrate
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7405861B2 (en) 2004-09-27 2008-07-29 Idc, Llc Method and device for protecting interferometric modulators from electrostatic discharge
US7405863B2 (en) 2006-06-01 2008-07-29 Qualcomm Mems Technologies, Inc. Patterning of mechanical layer in MEMS to reduce stresses at supports
US7417784B2 (en) 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7417783B2 (en) 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7420728B2 (en) 2004-09-27 2008-09-02 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7485236B2 (en) 2003-08-26 2009-02-03 Qualcomm Mems Technologies, Inc. Interference display cell and fabrication method thereof
US7492502B2 (en) 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7527996B2 (en) 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7534640B2 (en) 2005-07-22 2009-05-19 Qualcomm Mems Technologies, Inc. Support structure for MEMS device and methods therefor
US7547568B2 (en) 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7547565B2 (en) 2005-02-04 2009-06-16 Qualcomm Mems Technologies, Inc. Method of manufacturing optical interference color display
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7553684B2 (en) 2004-09-27 2009-06-30 Idc, Llc Method of fabricating interferometric devices using lift-off processing techniques
US7566664B2 (en) 2006-08-02 2009-07-28 Qualcomm Mems Technologies, Inc. Selective etching of MEMS using gaseous halides and reactive co-etchants
US7616369B2 (en) 2003-06-24 2009-11-10 Idc, Llc Film stack for manufacturing micro-electromechanical systems (MEMS) devices
US7623287B2 (en) 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7630114B2 (en) 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US7643203B2 (en) 2006-04-10 2010-01-05 Qualcomm Mems Technologies, Inc. Interferometric optical display system with broadband characteristics
US7684104B2 (en) 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
US7706044B2 (en) 2003-05-26 2010-04-27 Qualcomm Mems Technologies, Inc. Optical interference display cell and method of making the same
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US8736590B2 (en) 2009-03-27 2014-05-27 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators
US8791897B2 (en) 2004-09-27 2014-07-29 Qualcomm Mems Technologies, Inc. Method and system for writing data to MEMS display elements
US8830557B2 (en) 2007-05-11 2014-09-09 Qualcomm Mems Technologies, Inc. Methods of fabricating MEMS with spacers between plates and devices formed by same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0741897A1 (fr) * 1994-11-28 1996-11-13 Koninklijke Philips Electronics N.V. Microcontroleur se raccordant a un affichage a cristaux liquides
KR100253378B1 (ko) * 1997-12-15 2000-04-15 김영환 주문형반도체의외부표시장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2266420A1 (en) * 1974-03-29 1975-10-24 Thomson Csf Liq. crystal cell controller and visual panel - incorporates triacs connected to system supplying logic information as binary signals

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2266420A1 (en) * 1974-03-29 1975-10-24 Thomson Csf Liq. crystal cell controller and visual panel - incorporates triacs connected to system supplying logic information as binary signals

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
L'ELECTRICITE ELECTRONIQUE MODERNE, Band 42, Nr. 267, Oktober 1972, Seiten 35-37, Paris, FR; M. SCHIEKEL: "Affichage alphanumérique par dispositif à cristaux liquides" *

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7250315B2 (en) 2002-02-12 2007-07-31 Idc, Llc Method for fabricating a structure for a microelectromechanical system (MEMS) device
US7642110B2 (en) 2002-02-12 2010-01-05 Qualcomm Mems Technologies, Inc. Method for fabricating a structure for a microelectromechanical systems (MEMS) device
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7706044B2 (en) 2003-05-26 2010-04-27 Qualcomm Mems Technologies, Inc. Optical interference display cell and method of making the same
US7616369B2 (en) 2003-06-24 2009-11-10 Idc, Llc Film stack for manufacturing micro-electromechanical systems (MEMS) devices
US7485236B2 (en) 2003-08-26 2009-02-03 Qualcomm Mems Technologies, Inc. Interference display cell and fabrication method thereof
US7291921B2 (en) 2003-09-30 2007-11-06 Qualcomm Mems Technologies, Inc. Structure of a micro electro mechanical system and the manufacturing method thereof
US7532194B2 (en) 2004-02-03 2009-05-12 Idc, Llc Driver voltage adjuster
WO2005078693A3 (fr) * 2004-02-03 2005-10-13 Idc Llc Dispositif de reglage de tension d'une commande
US7256922B2 (en) 2004-07-02 2007-08-14 Idc, Llc Interferometric modulators with thin film transistors
US7405861B2 (en) 2004-09-27 2008-07-29 Idc, Llc Method and device for protecting interferometric modulators from electrostatic discharge
US7492502B2 (en) 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7417783B2 (en) 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7420728B2 (en) 2004-09-27 2008-09-02 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7429334B2 (en) 2004-09-27 2008-09-30 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7553684B2 (en) 2004-09-27 2009-06-30 Idc, Llc Method of fabricating interferometric devices using lift-off processing techniques
US8791897B2 (en) 2004-09-27 2014-07-29 Qualcomm Mems Technologies, Inc. Method and system for writing data to MEMS display elements
US7349136B2 (en) 2004-09-27 2008-03-25 Idc, Llc Method and device for a display having transparent components integrated therein
US7373026B2 (en) 2004-09-27 2008-05-13 Idc, Llc MEMS device fabricated on a pre-patterned substrate
US7369296B2 (en) 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7684104B2 (en) 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
US7547565B2 (en) 2005-02-04 2009-06-16 Qualcomm Mems Technologies, Inc. Method of manufacturing optical interference color display
US7534640B2 (en) 2005-07-22 2009-05-19 Qualcomm Mems Technologies, Inc. Support structure for MEMS device and methods therefor
US7630114B2 (en) 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US8394656B2 (en) 2005-12-29 2013-03-12 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7547568B2 (en) 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7643203B2 (en) 2006-04-10 2010-01-05 Qualcomm Mems Technologies, Inc. Interferometric optical display system with broadband characteristics
US7527996B2 (en) 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7623287B2 (en) 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7564613B2 (en) 2006-04-19 2009-07-21 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7417784B2 (en) 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7369292B2 (en) 2006-05-03 2008-05-06 Qualcomm Mems Technologies, Inc. Electrode and interconnect materials for MEMS devices
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7405863B2 (en) 2006-06-01 2008-07-29 Qualcomm Mems Technologies, Inc. Patterning of mechanical layer in MEMS to reduce stresses at supports
US7566664B2 (en) 2006-08-02 2009-07-28 Qualcomm Mems Technologies, Inc. Selective etching of MEMS using gaseous halides and reactive co-etchants
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US8830557B2 (en) 2007-05-11 2014-09-09 Qualcomm Mems Technologies, Inc. Methods of fabricating MEMS with spacers between plates and devices formed by same
US8736590B2 (en) 2009-03-27 2014-05-27 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators

Also Published As

Publication number Publication date
DE3427986A1 (de) 1986-01-30

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