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EE200800038A - Teemandist nano-otsak ja meetod nano-otsaku valmistamiseks - Google Patents

Teemandist nano-otsak ja meetod nano-otsaku valmistamiseks

Info

Publication number
EE200800038A
EE200800038A EEP200800038A EEP200800038A EE200800038A EE 200800038 A EE200800038 A EE 200800038A EE P200800038 A EEP200800038 A EE P200800038A EE P200800038 A EEP200800038 A EE P200800038A EE 200800038 A EE200800038 A EE 200800038A
Authority
EE
Estonia
Prior art keywords
nozzle
nano
diamond
making
making nano
Prior art date
Application number
EEP200800038A
Other languages
English (en)
Inventor
Kopylov Peter
Obraztsov Alexander
Original Assignee
Eesti Nanotehnoloogiate Arenduskeskuse As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eesti Nanotehnoloogiate Arenduskeskuse As filed Critical Eesti Nanotehnoloogiate Arenduskeskuse As
Priority to EEP200800038A priority Critical patent/EE200800038A/et
Priority to PCT/EP2009/056100 priority patent/WO2009153116A2/en
Publication of EE200800038A publication Critical patent/EE200800038A/et

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/16—Probe manufacture
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/14—Particular materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
EEP200800038A 2008-05-29 2008-05-29 Teemandist nano-otsak ja meetod nano-otsaku valmistamiseks EE200800038A (et)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EEP200800038A EE200800038A (et) 2008-05-29 2008-05-29 Teemandist nano-otsak ja meetod nano-otsaku valmistamiseks
PCT/EP2009/056100 WO2009153116A2 (en) 2008-05-29 2009-05-19 Diamond nano-tip and method for production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EEP200800038A EE200800038A (et) 2008-05-29 2008-05-29 Teemandist nano-otsak ja meetod nano-otsaku valmistamiseks

Publications (1)

Publication Number Publication Date
EE200800038A true EE200800038A (et) 2010-02-15

Family

ID=40786727

Family Applications (1)

Application Number Title Priority Date Filing Date
EEP200800038A EE200800038A (et) 2008-05-29 2008-05-29 Teemandist nano-otsak ja meetod nano-otsaku valmistamiseks

Country Status (2)

Country Link
EE (1) EE200800038A (et)
WO (1) WO2009153116A2 (et)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112779517B (zh) * 2020-12-28 2022-07-01 吉林工程技术师范学院 一种自支撑纳米锥金刚石的制备方法
CN113418904B (zh) * 2021-06-21 2023-05-16 北京大学 一种表面增强拉曼散射基底及其制备方法和应用

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0181256B1 (ko) * 1996-02-01 1999-03-20 김은영 침상의 다이아몬드 팁 제조방법

Also Published As

Publication number Publication date
WO2009153116A3 (en) 2010-06-10
WO2009153116A2 (en) 2009-12-23

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Legal Events

Date Code Title Description
GB1A Change in the ownership or in the address of the owner
GB1A Change in the ownership or in the address of the owner
HH1A Change of representative