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DK4029059T3 - Fremstillingsfremgangsmåde - Google Patents

Fremstillingsfremgangsmåde Download PDF

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Publication number
DK4029059T3
DK4029059T3 DK19769096.9T DK19769096T DK4029059T3 DK 4029059 T3 DK4029059 T3 DK 4029059T3 DK 19769096 T DK19769096 T DK 19769096T DK 4029059 T3 DK4029059 T3 DK 4029059T3
Authority
DK
Denmark
Prior art keywords
manufacturing process
manufacturing
Prior art date
Application number
DK19769096.9T
Other languages
English (en)
Inventor
Philippe Caroff-Gaonac'h
Leonardus Petrus Kouwenhoven
Pavel Aseev
Original Assignee
Microsoft Technology Licensing Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsoft Technology Licensing Llc filed Critical Microsoft Technology Licensing Llc
Application granted granted Critical
Publication of DK4029059T3 publication Critical patent/DK4029059T3/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
DK19769096.9T 2019-09-10 2019-09-10 Fremstillingsfremgangsmåde DK4029059T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2019/074049 WO2021047754A1 (en) 2019-09-10 2019-09-10 Fabrication method

Publications (1)

Publication Number Publication Date
DK4029059T3 true DK4029059T3 (da) 2023-11-27

Family

ID=67956749

Family Applications (1)

Application Number Title Priority Date Filing Date
DK19769096.9T DK4029059T3 (da) 2019-09-10 2019-09-10 Fremstillingsfremgangsmåde

Country Status (5)

Country Link
US (1) US20240107897A1 (da)
EP (1) EP4029059B1 (da)
CN (1) CN114365290B (da)
DK (1) DK4029059T3 (da)
WO (1) WO2021047754A1 (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023079561A1 (en) * 2021-11-07 2023-05-11 Yeda Research And Development Co. Ltd. Tapered nanowire device for quantum computing

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1359131A (fr) * 1961-12-11 1964-04-24 Fairchild Camera Instr Co Procédé pour la croissance épitaxiale de matières semi-conductrices
CA2231625C (en) * 1997-03-17 2002-04-02 Canon Kabushiki Kaisha Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
US6255182B1 (en) * 2000-02-14 2001-07-03 Advanced Micro Devices, Inc. Method of forming a gate structure of a transistor by means of scalable spacer technology
US20060228850A1 (en) * 2005-04-06 2006-10-12 Pang-Yen Tsai Pattern loading effect reduction for selective epitaxial growth
US8030108B1 (en) * 2008-06-30 2011-10-04 Stc.Unm Epitaxial growth of in-plane nanowires and nanowire devices
CN102842662B (zh) * 2012-09-10 2015-07-01 圆融光电科技有限公司 一种纳米柱阵列化合物半导体器件的自组装制备方法
CN104952984B (zh) * 2014-03-27 2017-11-14 清华大学 外延结构的制备方法
CN107849727B (zh) * 2015-06-26 2021-07-13 哥本哈根大学 生长在衬底上的纳米结构的网络
EP3427311B1 (en) * 2016-03-07 2020-07-22 The University of Copenhagen A manufacturing method for a nanostructured device using a shadow mask
KR102720158B1 (ko) * 2016-10-31 2024-10-23 삼성전자주식회사 반도체 메모리 장치의 제조 방법
GB201718897D0 (en) * 2017-11-15 2017-12-27 Microsoft Technology Licensing Llc Superconductor-semiconductor fabrication
WO2019074557A1 (en) * 2017-10-15 2019-04-18 Microsoft Technology Licensing Llc LATERAL GRID PRODUCTION IN TOPOLOGICAL QUESTIONS WITH SELECTIVE GROWTH OF AREA

Also Published As

Publication number Publication date
CN114365290B (zh) 2025-06-06
EP4029059A1 (en) 2022-07-20
WO2021047754A1 (en) 2021-03-18
CN114365290A (zh) 2022-04-15
US20240107897A1 (en) 2024-03-28
EP4029059B1 (en) 2023-10-25

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