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DK3759745T3 - Dannelse af piezoelektriske anordninger - Google Patents

Dannelse af piezoelektriske anordninger Download PDF

Info

Publication number
DK3759745T3
DK3759745T3 DK19716472.6T DK19716472T DK3759745T3 DK 3759745 T3 DK3759745 T3 DK 3759745T3 DK 19716472 T DK19716472 T DK 19716472T DK 3759745 T3 DK3759745 T3 DK 3759745T3
Authority
DK
Denmark
Prior art keywords
formation
piezoelectric devices
piezoelectric
devices
Prior art date
Application number
DK19716472.6T
Other languages
English (en)
Inventor
David Hughes
Desmond Gibson
Daniel Irving
Original Assignee
Novosound Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novosound Ltd filed Critical Novosound Ltd
Application granted granted Critical
Publication of DK3759745T3 publication Critical patent/DK3759745T3/da

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B06GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06BMETHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/08Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Physical Vapour Deposition (AREA)
DK19716472.6T 2018-02-28 2019-02-27 Dannelse af piezoelektriske anordninger DK3759745T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1803257.3A GB2571529B (en) 2018-02-28 2018-02-28 Formation of piezoelectric devices
PCT/GB2019/050549 WO2019166805A2 (en) 2018-02-28 2019-02-27 Formation of piezoelectric devices

Publications (1)

Publication Number Publication Date
DK3759745T3 true DK3759745T3 (da) 2024-09-16

Family

ID=61903159

Family Applications (1)

Application Number Title Priority Date Filing Date
DK19716472.6T DK3759745T3 (da) 2018-02-28 2019-02-27 Dannelse af piezoelektriske anordninger

Country Status (9)

Country Link
US (1) US11882767B2 (da)
EP (1) EP3759745B8 (da)
CN (1) CN112088438B (da)
CA (1) CA3092312A1 (da)
DK (1) DK3759745T3 (da)
ES (1) ES2986661T3 (da)
GB (1) GB2571529B (da)
IL (1) IL276977B2 (da)
WO (1) WO2019166805A2 (da)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2571361B (en) * 2018-03-02 2020-04-22 Novosound Ltd Ultrasound array transducer manufacturing
GB2582562B (en) 2019-03-22 2021-07-21 Novosound Ltd Ultrasonic device
GB2594328B (en) 2020-04-24 2024-04-10 Novosound Ltd Secure ultrasound system
GB2603887A (en) 2020-11-24 2022-08-24 Novosound Ltd Tamper proof ultrasound sensor
CN116939442A (zh) * 2022-04-01 2023-10-24 深圳市韶音科技有限公司 一种声学设备
GB2636143A (en) 2023-11-30 2025-06-11 Novosound Ltd Wide area monitoring system
CN118719517B (zh) * 2024-06-20 2025-05-16 中山大学 多阵列超声换能器、多阵列超声换能器制造方法及内窥镜

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396495A (en) * 1977-02-02 1978-08-23 Murata Manufacturing Co Piezooelectric crystal film of zinc oxide
JPS5830749B2 (ja) * 1977-07-28 1983-07-01 株式会社村田製作所 酸化亜鉛の圧電結晶膜
JP3947443B2 (ja) * 2002-08-30 2007-07-18 Tdk株式会社 電子デバイス用基板および電子デバイス
JP4451104B2 (ja) * 2003-09-16 2010-04-14 学校法人桐蔭学園 Pzt圧電結晶膜の製法及び超音波トランスデューサ
CN101118948A (zh) * 2007-09-03 2008-02-06 清华大学 具有大压电常数和高电阻率的V掺杂ZnO薄膜材料
JP5449970B2 (ja) * 2009-10-09 2014-03-19 富士フイルム株式会社 圧電体膜の成膜方法、圧電素子、液体吐出装置、及び圧電型超音波振動子
CN102163687A (zh) * 2010-12-10 2011-08-24 清华大学 一种高压电响应氧化锌柔性压力传感器及其制备方法
US9166141B2 (en) * 2011-09-09 2015-10-20 Dvx, Llc Process of manufacturing a piezopolymer transducer with matching layer
JP6164405B2 (ja) * 2013-03-28 2017-07-19 セイコーエプソン株式会社 圧電素子モジュール、超音波トランスデューサー、超音波デバイス、液体噴射ヘッド、液体噴射装置及び圧電素子モジュールの製造方法
JP2017117981A (ja) * 2015-12-25 2017-06-29 セイコーエプソン株式会社 圧電素子、圧電モジュール、電子機器、及び圧電素子の製造方法
US20170263847A1 (en) * 2016-03-09 2017-09-14 Teledyne Dalsa Semiconductor, Inc. Piezoelectric Alloy Films
GB2555835B (en) * 2016-11-11 2018-11-28 Novosound Ltd Ultrasound transducer
CN108231998A (zh) * 2017-12-31 2018-06-29 中国科学院声学研究所 一种掺钒ZnO厚膜及其制备方法

Also Published As

Publication number Publication date
CN112088438B (zh) 2025-11-25
GB2571529A (en) 2019-09-04
CA3092312A1 (en) 2019-09-06
WO2019166805A3 (en) 2019-10-03
ES2986661T3 (es) 2024-11-12
IL276977B2 (en) 2025-06-01
GB2571529B (en) 2021-04-14
GB201803257D0 (en) 2018-04-11
EP3759745B1 (en) 2024-06-12
IL276977B1 (en) 2025-02-01
EP3759745A2 (en) 2021-01-06
CN112088438A (zh) 2020-12-15
WO2019166805A2 (en) 2019-09-06
EP3759745B8 (en) 2024-07-24
IL276977A (en) 2020-10-29
US20200411750A1 (en) 2020-12-31
US11882767B2 (en) 2024-01-23

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