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DK2850626T3 - Optoelektroniske indretninger med metalorganiske perovskiter med blandede anioner - Google Patents

Optoelektroniske indretninger med metalorganiske perovskiter med blandede anioner Download PDF

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DK2850626T3
DK2850626T3 DK13723943.0T DK13723943T DK2850626T3 DK 2850626 T3 DK2850626 T3 DK 2850626T3 DK 13723943 T DK13723943 T DK 13723943T DK 2850626 T3 DK2850626 T3 DK 2850626T3
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perovskite
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substituted
hydrogen
halide
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Henry Snaith
Michael Lee
Takuro Murakami
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Isis Innovation
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Claims (23)

1. Fotovoltaisk indretning, omfattende en perovskit med blandede anioner, kendetegnet ved, at perovskit med blandede anioner omfatter to eller flere forskellige anioner, der er udvalgt blandt halogenid-anioner og chalcogenid-anioner.
2. Fotovoltaisk indretning ifølge krav 1, hvor perovskit med blandede anioner er et sensibilisatormateriale.
3. Fotovoltaisk indretning ifølge krav 1 eller krav 2, hvor perovskit med blandede anioner omfatter en første kation, en anden kation, og de to eller flere forskellige anioner, og hvor den anden kation eventuelt er en metalkation, er fortrinsvis en divalent metalkation, og er mere foretrukket udvalgt blandt Sn2+ og Pb2+.
4. Fotovoltaisk indretning ifølge krav 3 hvor den første kation er en organisk kation, og den organiske kation er fortrinsvis en hvilken som helst af: en organisk kation med formelen (R1R2R3R4N)+, hvor R-ι er hydrogen, usub-stitueret eller substitueret CrC2o alkyl, eller usubstitueret eller substitueret aryl; R2 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; R3 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; og R4 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; en organisk kation med formelen (R5NH3)+ hvor R5 er hydrogen, eller usubstitueret eller substitueret CrC20 alkyl; og en organisk kation med formelen (R5R6N=CFI-NR7R8)+, hvor R5 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; R6 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; R7 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; og R8 er hydrogen, usubstitueret og substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; og fortrinsvis har formelen (H2N=CH-NH2)+.
5. Fotovoltaisk indretning ifølge et hvilket som helst af de foregående krav, hvor perovskit er en perovskit med blandede halogenider, hvor de to eller flere forskellige anioner er to eller flere forskellige halogenid-anioner.
6. Fotovoltaisk indretning ifølge et hvilket som helst af de foregående krav, hvor perovskit er en perovskitforbindelse med formelen (I):
(I) hvor: [A] er mindst én organisk kation; [B] er mindst én metalkation; og [X] er de to eller flere forskellige anioner.
7. Fotovoltaisk indretning ifølge et hvilket som helst af kravene 1 til 6, hvor perovskit er en perovskitforbindelse med formelen (Ila):
(Ila) hvor: A er en organisk kation med formelen (R5R6N=CH-NR7R8)+, hvor: R5, R6, R7 og R8 hver især uafhængigt er udvalgt blandt hydrogen, usubstitueret eller substitueret CrC2o alkyl, og usubstitueret eller substitueret aryl; B er en metalkation; X er en første halogenid-anion; X' er en anden halogenid-anion, som er forskellig fra den første halogenid-anion; og z er større end 0 og mindre end 1, og z er fortrinsvis fra 0,05 til 0,95.
8. Fotovoltaisk indretning ifølge et hvilket som helst af kravene 1 til 6, hvor perovskit er udvalgt blandt CFI3NFI3PbBrl2, CFI2NFI2PbBrCI2, CFI3NFI3PblBr2, CH3NH3PblCI2, CH3NH3PbCIBr2, CH3NH3Pbl2CI, CH3NH3SnBrl2, CH3NH3SnBrCI2, CH3NH3SnF2Br, CH3NH3SnlBr2, CH3NH3SnlCI2, CH3NH3SnF2l, CH3NH3SnCIBr2, CH3NH3SnlCI og CH3NH3SnF2CI.
9. Fotovoltaisk indretning ifølge krav 7, hvor perovskit har formelen (H2N=CH-NH2)Pbl3zBr3(i-z).
10. Fotovoltaisk indretning ifølge et hvilket som helst af de foregående krav, som er en fotovoltaisk indretning, som omfatter en hvilken som helst af: (i) en første elektrode; en anden elektrode; og, anbragt mellem den første og anden elektrode: (a) perovskit; (ii) en første elektrode; en anden elektrode; og, anbragt mellem den første og anden elektrode: (a) et lag af n-typen; og (b) perovskit; (iii) en første elektrode; en anden elektrode; og, anbragt mellem den første og anden elektrode: (a) et lag af p-typen; og (b) perovskit; (iv) en første elektrode; en anden elektrode; og, anbragt mellem den første og anden elektrode: (a) et lag af n-typen; (b) perovskit; og (c) et lag af p-typen.
11. Fotovoltaisk indretning ifølge et hvilket som helst af kravene 1 til 10, som er en fotovoltaisk indretning, der omfatter: en første elektrode; en anden elektrode; og, anbragt mellem den første og anden elektrode: (a) et porøst lag af en halvleder; og (b) et sensibilisatormateriale med perovskit; og eventuelt (c) et ladningstransporterende materiale.
12. Fotovoltaisk indretning ifølge et hvilket som helst af kravene 1 til 11, som er en fotovoltaisk indretning, der omfatter: en første elektrode; en anden elektrode; og, anbragt mellem den første og anden elektrode: (a) et porøst lag af en halvleder, som er et porøst lag af en halvleder af p-typen; (b) et sensibilisatormateriale med perovskit; og (c) et ladningstransporterende materiale, som er et elektrontransporterende materiale; hvor det porøse lag af en halvleder af p-typen eventuelt omfatter en oxid af nikkel, vanadium, kobber eller molybdæn; hvor det porøse lag af en halvleder af p-typen eventuelt er i kontakt med et kompakt lag af en halvleder af p-typen, og hvor det kompakte lag af en halv leder af p-typen fortrinsvis omfatter en oxid af nikkel, vanadium, kobber, molybdæn eller wolfram; og hvor det elektrontransporterende materiale eventuelt omfatter en fulleren eller perylen, eller derivater deraf, eller P(NDI20D-T2).
13. Fotovoltaisk indretning ifølge et hvilket som helst af kravene 1 til 11, som er en fotovoltaisk indretning, der omfatter: en første elektrode; en anden elektrode; og, anbragt mellem den første og anden elektrode: (a) et porøst lag af en halvleder, som er et porøst lag af en halvleder af n-typen; (b) et sensibilisatormateriale med perovskit; og (c) et ladningstransporterende materiale, som er et hultransporterende materiale; hvor det porøse lag af en halvleder af n-typen omfatter: en oxid af titanium, tin, zink, niobium, tantalum, wolfram, indium, gallium, neodinium, palladium eller cadmium, og fortrinsvis omfatter Ti02; og hvor det porøse lag af en halvleder eventuelt er i kontakt med et kompakt lag af en halvleder af n-typen, og hvor det kompakte lag af en halvleder af n-typen eventuelt omfatter Ti02.
14. Fotovoltaisk indretning ifølge krav 13, hvor det hultransporterende materiale er en hvilken som helst af: en hultransporterende faststofmateriale eller en flydende elektrolyt; en polymer- eller molekylehultransportør, og hvor det polymer- eller moleky-lehultransportørmateriale eventuelt er udvalgt blandt spiro-OMeTAD, P3HT, PCPDTBT og PVK; en molekylehultransportør, eller en polymer eller copolymerer; og en uorganisk hultransportør, og hvor den uorganiske hultransportør eventuelt er Cul, CuBr, CuSCN, Cu20, CuO eller CIS.
15. Perovskit med blandede halogenider med formelen (I)
(I) hvor: [A] er mindst én organisk kation med formelen (R-|R2R3R4N)+, hvor: (i) Ri er hydrogen, usubstitueret eller substitueret C1-C20 alkyl, eller usubsti-tueret eller substitueret aryl; (ii) R2 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; (iii) R3 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret; og (iv) R4 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; [B] er mindst én divalent metalkation; og [X] er to eller flere forskellige halogenid-anioner; forudsat at: (i) når [A] er en enkel organisk kation, som er(CH3NH3)+ og [B] er en enkel metalkation, som er Sn2+, omfatter perovskit med blandede halogenider ikke: (a) en chlorid-ion og en bromid-ion, eller (b) en bromid-ion og en iodid-ion; og (ii) når [A] er en enkel organisk kation, som er (CH3NH3)+ og [B] er en enkel metalkation, som er Pb2+, omfatter perovskit med blandede halogenider ikke en chlorid-ion og en bromid-ion.
16. Perovskit med blandede halogenider ifølge krav 15, hvor: (i) [X] er to forskellige halogenid-anioner X og X'; og/eller (ii) den divalente metalkation er en hvilken som helst af Sn2+ og Pb2+; og/eller (iii) [A] er mindst én organisk kation med formelen (R5NH3)+, hvor: R5 er hydrogen, eller usubstitueret eller substitueret CrC20 alkyl, og hvor R5 eventuelt er methyl.
17. Perovskit med blandede halogenider ifølge et hvilket som helst af kravene 15 eller 16, hvor perovskit er en perovskitforbindelse med formelen (II):
(II) hvor: A er en organisk kation; B er en divalent metalkation; X er en første halogenid-anion; X' er en anden halogenid-anion, som er forskellig fra den første halogenid-anion; og y er fra 0,05 til 2,95. forudsat at: (i) når A er en organisk kation, som er (CH3NH3)+ og B er en divalent metal-kation, som er Sn2+, omfatter perovskit med blandede halogenider ikke: (a) en chlorid-ion og en bromid-ion, eller (b) en bromid-ion og en iodid-ion; og (ii) når A er en organisk kation, som er (CH3NH3)+, og B er en divalent metal-kation, som er Pb2+, omfatter perovskit med blandede halogenider ikke en chlorid-ion og en bromid-ion.
18. Perovskit med blandede halogenider ifølge kravene 16 eller 17, hvor X er iodid, og X' er fluorid eller chlorid, eller X er fluorid, og X' er chlorid, bromid eller iodid.
19. Perovskit med blandede halogenider ifølge et hvilket som helst af kravene 15 til 18, hvor perovskit med blandede anioner er udvalgt blandt CH3NH3PbBrl2, CH3NH3PblBr2, CH3NH3PblCI2, CH3NH3Pbl2CI, CH3NH3SnF2Br, CH3NH3SnlCI2, CH3NH3SnF2l, CH3NH3Snl2CI og CH3NH3SnF2CI.
20. Perovskit med blandede halogenider med formelen (I)
(I) hvor: [A] er mindst én organisk kation med formelen (R5R6N=CH-NR7R8)+, hvor: (i) R5 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubsti-tueret eller substitueret aryl; (ii) R6 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; (iii) R7 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; og (iv) R8 er hydrogen, usubstitueret eller substitueret C1-C20 alkyl, eller usubstitueret eller substitueret aryl: [B] er mindst én divalent metalkation; og [X] er to eller flere forskellige halogenid-ioner.
21. Perovskit med blandede halogenider ifølge krav 20, hvor perovskit er en perovskitforbindelse med formelen (Ila):
(Ila) hvor: A er en organisk kation med formelen (R5R6N=CH-NR7R8)+, hvor: (i) R5 er hydrogen, usubstitueret eller substitueret C1-C20 alkyl, eller usubsti-tueret eller substitueret aryl; (ii) R6 er hydrogen, usubstitueret eller substitueret C1-C20 alkyl, eller usubstitueret eller substitueret aryl; (iii) R7 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; og (iv) R8 er hydrogen, usubstitueret eller substitueret CrC20 alkyl, eller usubstitueret eller substitueret aryl; B er en metalkation, der er udvalgt blandt Sn2+ og Pb2+; X er en første halogenid-anion; X' er en anden halogenid-anion, som er forskellig fra den første halogenid-anion; og z er større end 0 og mindre end 1, og z er fortrinsvis fra 0,05 til 0,95.
22. Perovskit med blandede halogenider ifølge krav 21, hvor den organiske kation har formelen (H2N=CH-NH2)+, og hvor perovskit fortrinsvis har formelen (H2N=CH-NH2)Pbl3zBr3(i-z).
23. Fotosensibiliserende materiale til en fotovaltaisk indretning, som omfatter perovskit med blandede anioner, hvor perovskit med blandede anioner omfatter to eller flere forskellig anioner udvalgt blandt halogenid-anioner og cha-Icogenid-anioner, og hvor perovskit med blandede anioner eventuelt er yderligere defineret i et hvilket som helst af kravene 2 til 22.
DK13723943.0T 2012-05-18 2013-05-20 Optoelektroniske indretninger med metalorganiske perovskitter med blandede anioner DK2850626T4 (da)

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GBGB1208793.8A GB201208793D0 (en) 2012-05-18 2012-05-18 Optoelectronic device
PCT/GB2013/051306 WO2013171517A1 (en) 2012-05-18 2013-05-20 Optoelectronic devices with organometal perovskites with mixed anions

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DK2850626T4 DK2850626T4 (da) 2020-01-13

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Families Citing this family (236)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9181475B2 (en) 2012-02-21 2015-11-10 Northwestern University Photoluminescent compounds
WO2013171520A1 (en) 2012-05-18 2013-11-21 Isis Innovation Limited Optoelectronic device comprising perovskites
GB201208793D0 (en) * 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
PL2850627T3 (pl) 2012-05-18 2016-10-31 Urządzenie optoelektroniczne zawierające porowaty materiał rusztowania oraz perowskity
HUE059781T2 (hu) 2012-09-18 2022-12-28 Univ Oxford Innovation Ltd Optoelektronikai eszköz
JP6128900B2 (ja) * 2013-03-08 2017-05-17 大阪瓦斯株式会社 無機ホール輸送材を使用したペロブスカイト系光電変換装置
US10510914B2 (en) 2013-03-21 2019-12-17 Board Of Trustees Of Michigan State University Transparent energy-harvesting devices
EP3042402A4 (en) * 2013-09-04 2017-05-31 Dyesol Ltd A photovoltaic device
US12215266B2 (en) 2013-09-26 2025-02-04 Samsung Electronics Co., Ltd. Nanocrystal particles and processes for synthesizing the same
US11746290B2 (en) 2013-09-26 2023-09-05 Samsung Electronics Co., Ltd. Nanocrystal particles and processes for synthesizing the same
JP6415223B2 (ja) * 2013-09-30 2018-10-31 積水化学工業株式会社 有機無機複合薄膜太陽電池
WO2015049031A1 (en) 2013-10-02 2015-04-09 Merck Patent Gmbh Hole transport material
US11180660B2 (en) 2013-11-26 2021-11-23 Cubic Perovskite Llc Mixed cation perovskite material devices
US9136408B2 (en) 2013-11-26 2015-09-15 Hunt Energy Enterprises, Llc Perovskite and other solar cell materials
US9425396B2 (en) 2013-11-26 2016-08-23 Hunt Energy Enterprises L.L.C. Perovskite material layer processing
US9416279B2 (en) 2013-11-26 2016-08-16 Hunt Energy Enterprises, L.L.C. Bi- and tri-layer interfacial layers in perovskite material devices
CN103682153B (zh) * 2013-11-28 2017-02-08 中国科学院物理研究所 用于钙钛矿型有机卤化铅薄膜太阳能电池的金属‑绝缘层‑半导体背接触界面结构及其制备方法
WO2015092397A1 (en) 2013-12-17 2015-06-25 Isis Innovation Limited Photovoltaic device comprising a metal halide perovskite and a passivating agent
JP2015119102A (ja) * 2013-12-19 2015-06-25 アイシン精機株式会社 ハイブリッド型太陽電池
GB201322572D0 (en) 2013-12-19 2014-02-05 Oxford Photovoltaics Ltd Connection of photoactive regions in an optoelectronic device
CN105830228B (zh) * 2013-12-23 2017-09-22 韩国化学研究院 无机/有机杂化钙钛矿化合物前体物质
CN103779101A (zh) * 2014-01-07 2014-05-07 浙江大学 一种杂化固体太阳能电池及其制备方法
CN103762344B (zh) * 2014-01-21 2016-08-17 华中科技大学 一种两性分子改性的钙钛矿光电功能材料及其应用
CN106170877B (zh) * 2014-02-26 2018-08-31 联邦科学和工业研究组织 形成钙钛矿光敏装置的光敏层的方法
WO2015139082A1 (en) * 2014-03-17 2015-09-24 Monash University Improved precipitation process for producing perovskite-based solar cells
JP5943492B2 (ja) * 2014-03-26 2016-07-05 旭化成株式会社 シリコン太陽電池
JP6337561B2 (ja) * 2014-03-27 2018-06-06 株式会社リコー ペロブスカイト型太陽電池
CN103915567A (zh) * 2014-03-28 2014-07-09 中国科学院上海技术物理研究所 一种以无机化合物为空穴传输层的钙钛矿太阳能电池
WO2015160838A1 (en) * 2014-04-15 2015-10-22 Northwestern University Lead-free solid-state organic-inorganic halide perovskite photovoltaic cells
US10727001B2 (en) 2014-04-16 2020-07-28 Ricoh Company, Ltd. Photoelectric conversion element
WO2015159952A1 (ja) * 2014-04-18 2015-10-22 富士フイルム株式会社 光電変換素子、これを用いた太陽電池ならびに光電変換素子の製造方法
WO2015164731A1 (en) 2014-04-24 2015-10-29 Northwestern University Solar cells with perovskite-based light sensitization layers
JP6175463B2 (ja) * 2014-04-25 2017-08-02 富士フイルム株式会社 光電変換素子、これを用いた太陽電池ならびに光電変換素子の製造方法
CN103956431B (zh) * 2014-04-30 2017-10-20 华南理工大学 一种溶液加工的有机‑无机平面异质结太阳电池及其制备
GB201407606D0 (en) * 2014-04-30 2014-06-11 Cambridge Entpr Ltd Electroluminescent device
GB201408947D0 (en) * 2014-05-20 2014-07-02 Oxford Photovoltaics Ltd Increased - transparency optoelectronic device
EP3595026A1 (en) 2014-05-28 2020-01-15 Alliance for Sustainable Energy, LLC Methods for producing and using perovskite materials and devices therefrom
CN103996749B (zh) * 2014-06-04 2016-02-10 山西大学 一种钙钛矿太阳能电池光阳极的原位制备方法
US20150380169A1 (en) * 2014-06-30 2015-12-31 Sharp Laboratories Of America, Inc. Surface-Passivated Mesoporous Structure Solar Cell
US20150380170A1 (en) * 2014-06-30 2015-12-31 Sharp Laboratories Of America, Inc. Mesoporous Structure Solar Cell with Siloxane Barrier
TWI532198B (zh) * 2014-07-02 2016-05-01 國立成功大學 太陽能電池及其製造方法
WO2016009956A1 (ja) * 2014-07-12 2016-01-21 株式会社カネカ 複合太陽電池、太陽電池モジュール、および集光太陽電池
CN105280817B (zh) 2014-07-16 2017-11-07 财团法人工业技术研究院 太阳能电池与其形成方法
US9305715B2 (en) * 2014-08-01 2016-04-05 Hunt Energy Enterprises Llc Method of formulating perovskite solar cell materials
US20170226641A1 (en) 2014-08-07 2017-08-10 Okinawa Institute Of Science And Technology School Corporation System and method based on multi-source deposition for fabricating perovskite film
GB201414110D0 (en) * 2014-08-08 2014-09-24 Isis Innovation Thin film production
CN104157788B (zh) * 2014-08-19 2017-03-29 武汉大学 一种基于SnO2的钙钛矿薄膜光伏电池及其制备方法
CN105448524B (zh) * 2014-09-05 2018-03-20 中国科学院苏州纳米技术与纳米仿生研究所 银掺杂有机金属钙钛矿材料、太阳能电池及其制作方法
ES2563361B1 (es) * 2014-09-12 2016-09-14 Abengoa Research, S.L. Compuesto aromático policíclico sustituido como material de transporte de huecos en células solares de estado sólido basadas en perovskita
US20170260125A1 (en) * 2014-09-16 2017-09-14 Kureha Corporation Organic-inorganic hybrid compound, amine hydrogen iodide salt, composition for photoelectric conversion element, and photoelectric conversion element
CN104218109B (zh) * 2014-09-22 2016-05-25 南开大学 一种高效率钙钛矿薄膜太阳电池及其制备方法
WO2016060183A1 (ja) * 2014-10-14 2016-04-21 積水化学工業株式会社 太陽電池
CN107078220B (zh) * 2014-10-14 2019-07-26 积水化学工业株式会社 太阳能电池
KR101540364B1 (ko) * 2014-11-05 2015-07-30 한국과학기술연구원 Zso 기반 페로브스카이트 태양전지 및 이의 제조방법
CN107108461B (zh) * 2014-11-06 2020-04-28 浦项工科大学校产学协力团 钙钛矿纳米结晶粒子及利用该粒子的光电元件
JP6829682B2 (ja) 2014-11-06 2021-02-10 エスエヌ ディスプレイ カンパニー リミテッド ペロブスカイト発光素子用の発光層及びその製造方法とこれを利用したペロブスカイト発光素子
KR101643052B1 (ko) 2014-11-06 2016-07-27 포항공과대학교 산학협력단 파장변환입자, 파장변환입자의 제조방법, 및 파장변환입자를 포함하는 발광 소자
WO2016072806A2 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 코어-쉘 구조의 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자
KR101703451B1 (ko) 2014-11-06 2017-02-09 포항공과대학교 산학협력단 엑시톤 버퍼층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법
WO2016072810A1 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 엑시톤 버퍼층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법
WO2016072805A1 (ko) * 2014-11-06 2016-05-12 포항공과대학교 산학협력단 페로브스카이트 나노결정입자 및 이를 이용한 광전자 소자
EP3221905A2 (en) * 2014-11-20 2017-09-27 Qatar Foundation For Education Science And Community Development Hybrid organic-inorganic perovskite-based solar cell with copper oxide as a hole transport material
BR112017010550B1 (pt) * 2014-11-21 2022-05-17 Hunt Perovskite Technologies, L.L.C. Dispositivos fotovoltaicos de material de perovskita com camadas interfaciais
GB201421133D0 (en) * 2014-11-28 2015-01-14 Cambridge Entpr Ltd Electroluminescent device
EP3227394B1 (en) * 2014-12-03 2019-07-03 Saule Sp. z o.o. A film-forming compostion and a method for manufacturnig a photoactive film
KR101856726B1 (ko) * 2014-12-08 2018-05-10 주식회사 엘지화학 유무기 하이브리드 페로브스카이트 화합물, 이의 제조방법 및 이를 포함하는 태양전지
WO2016093485A1 (ko) * 2014-12-08 2016-06-16 주식회사 엘지화학 유무기 하이브리드 페로브스카이트 화합물, 이의 제조방법 및 이를 포함하는 태양전지
DE102014225543B4 (de) * 2014-12-11 2021-02-25 Siemens Healthcare Gmbh Perowskit-Partikel mit Beschichtung aus einem Halbleitermaterial, Verfahren zu deren Herstellung, Detektor, umfassend beschichtete Partikel, Verfahren zur Herstellung eines Detektors und Verfahren zur Herstellung einer Schicht umfassend beschichtete Partikel
DE102014225541A1 (de) 2014-12-11 2016-06-16 Siemens Healthcare Gmbh Detektionsschicht umfassend Perowskitkristalle
JP2016132638A (ja) * 2015-01-19 2016-07-25 三菱化学株式会社 有機無機ペロブスカイト化合物、発光体、半導体材料、電子デバイス及び太陽電池
WO2016121700A1 (ja) * 2015-01-30 2016-08-04 次世代化学材料評価技術研究組合 ハロゲン化スズ（ｉｉ）系ペロブスカイト薄膜およびその製造方法、ならびにそれを用いた電子デバイスおよび光電変換装置
KR101543438B1 (ko) * 2015-02-27 2015-08-11 성균관대학교산학협력단 페로브스카이트 태양전지 및 이의 제조 방법
US9701696B2 (en) 2015-02-27 2017-07-11 Alliance For Sustainable Energy, Llc Methods for producing single crystal mixed halide perovskites
EP3065189A1 (en) 2015-03-05 2016-09-07 Solaronix Sa Novel hole transport materials and optoelectronic devices containing the same
JP2016178166A (ja) * 2015-03-19 2016-10-06 積水化学工業株式会社 光電極の製造方法、光電極、太陽電池の製造方法および太陽電池
JP2016178167A (ja) * 2015-03-19 2016-10-06 積水化学工業株式会社 光電極の製造方法、光電極、太陽電池の製造方法および太陽電池
CN104733617A (zh) * 2015-03-30 2015-06-24 朱熹 利用大晶粒形成来制备高效率钙钛矿型太阳能电池
US20160293858A1 (en) * 2015-04-01 2016-10-06 Massachusetts Institute Of Technology Optoelectric devices fabricated with defect tolerant semiconductors
WO2016163985A1 (en) * 2015-04-06 2016-10-13 Tao Xu Perovskite photovoltaic device
JP6501303B2 (ja) * 2015-05-29 2019-04-17 国立大学法人金沢大学 微粒子化ペロブスカイト膜及びそれを用いた機能性素子
WO2016200897A1 (en) * 2015-06-08 2016-12-15 The Florida State University Research Foundation, Inc. Single-layer light-emitting diodes using organometallic halide perovskite/ionic-conducting polymer composite
GB201510351D0 (en) 2015-06-12 2015-07-29 Oxford Photovoltaics Ltd Method of depositioning a perovskite material
KR102164354B1 (ko) * 2015-06-12 2020-10-12 옥스퍼드 포토발테익스 리미티드 광기전 디바이스
CN105280819A (zh) * 2015-06-16 2016-01-27 郑州大学 一种平面异质结钙钛矿太阳能电池及其制备方法
CN105023921B (zh) * 2015-06-17 2017-11-28 华北电力大学 一种钙钛矿‑硅整体级联叠层太阳电池及其制备方法
JP6566738B2 (ja) * 2015-06-22 2019-08-28 富士フイルム株式会社 光電変換素子、太陽電池、および、光電変換素子の多孔質層の形成方法
JP6379074B2 (ja) * 2015-06-30 2018-08-22 富士フイルム株式会社 光電変換素子及び太陽電池
JP6476085B2 (ja) * 2015-06-30 2019-02-27 富士フイルム株式会社 光電変換素子及び太陽電池
JP6952610B2 (ja) * 2015-06-30 2021-10-20 ケンブリッジ・エンタープライズ・リミテッドＣａｍｂｒｉｄｇｅ Ｅｎｔｅｒｐｒｉｓｅ Ｌｉｍｉｔｅｄ ルミネセントデバイス
MY185883A (en) * 2015-07-10 2021-06-14 Hunt Perovskite Tech L L C Perovskite material layer processing
GB201513272D0 (en) * 2015-07-28 2015-09-09 Isis Innovation Luminescent material
JP6725221B2 (ja) * 2015-07-31 2020-07-15 積水化学工業株式会社 薄膜太陽電池
JP6469053B2 (ja) * 2015-09-17 2019-02-13 旭化成株式会社 組成物及びその製造方法
CN105226192A (zh) * 2015-10-11 2016-01-06 复旦大学 一种可拉伸的线状钙钛矿太阳能电池及其制备方法
EP3412750B1 (en) * 2015-10-28 2025-07-30 Samsung Electronics Co., Ltd. Quantum dots, production methods thereof, and electronic devices including the same
CN105405973A (zh) * 2015-10-30 2016-03-16 华中科技大学 基于钙钛矿类吸光材料的介观太阳能电池及其制备方法
WO2017087611A1 (en) * 2015-11-20 2017-05-26 Alliance For Sustainable Energy, Llc Multi-layered perovskites, devices, and methods of making the same
PL3182466T3 (pl) 2015-12-14 2020-11-02 Oxford Photovoltaics Limited Hermetyzacja modułu fotowoltaicznego
CN105575964B (zh) * 2015-12-22 2018-08-21 苏州大学 结合太阳能电池和光探测器的自驱动光电探测体系及其制备方法
KR102498798B1 (ko) 2015-12-22 2023-02-09 삼성전자주식회사 양자점 및 이를 포함하는 소자
JP6431513B2 (ja) * 2015-12-24 2018-11-28 旭化成株式会社 組成物
KR102653473B1 (ko) 2015-12-29 2024-04-01 삼성전자주식회사 양자점을 포함하는 전자 소자
CN105469996B (zh) * 2016-01-06 2018-02-23 中南大学 一种基于金属纳米粒子界面修饰的钙钛矿太阳能电池及其制备方法
US10622161B2 (en) 2016-01-06 2020-04-14 Nutech Ventures Narrow band perovskite single crystal photodetectors with tunable spectral response
CN105702869A (zh) * 2016-01-25 2016-06-22 上海科技大学 一种混合阳离子钙钛矿及其制备方法
EP3199664A1 (en) * 2016-01-29 2017-08-02 IMEC vzw Multi-solvent perovskite composition
CN105679966B (zh) * 2016-02-06 2018-04-06 杭州纤纳光电科技有限公司 一种基于钙钛矿材料的晶体管的制备方法
CN105609652B (zh) * 2016-02-06 2018-04-20 杭州纤纳光电科技有限公司 一种基于钙钛矿材料的发光二极管的制备方法
CN105679944B (zh) * 2016-02-06 2018-11-06 杭州纤纳光电科技有限公司 一种基于钙钛矿材料的太阳能电池及其制备方法
WO2017165434A1 (en) * 2016-03-21 2017-09-28 Nutech Ventures Sensitive x-ray and gamma-ray detectors including perovskite single crystals
KR20170113453A (ko) * 2016-03-31 2017-10-12 성균관대학교산학협력단 층상 유무기 복합 페로브스카이트를 이용한 멤리스터
KR102059556B1 (ko) * 2016-03-31 2019-12-26 성균관대학교산학협력단 Pb-free 유무기 복합 페로브스카이트를 이용한 멤리스터
KR101877302B1 (ko) * 2016-04-05 2018-07-11 한국화학연구원 무/유기 하이브리드 페로브스카이트 화합물 막 및 이의 제조방법
KR102692575B1 (ko) 2016-04-11 2024-08-07 삼성디스플레이 주식회사 페로브스카이트 화합물, 이를 포함한 박막 및 이를 포함한 광전자 장치
CN105679807B (zh) * 2016-04-15 2020-04-28 深圳市华星光电技术有限公司 Oled显示器件及其制作方法
JP7021782B2 (ja) 2016-04-22 2022-02-17 ザ トラスティーズ オブ プリンストン ユニバーシティ 有機－無機ハイブリッドペロブスカイトナノ結晶およびそれを作製する方法
JP6857868B2 (ja) * 2016-04-25 2021-04-14 パナソニックＩｐマネジメント株式会社 光吸収材料およびそれを用いた太陽電池
IL245536A0 (en) * 2016-05-08 2016-07-31 Yeda Res & Dev A process for preparing materials of halide perovskite and materials related to halide perovskite
JP6430437B2 (ja) * 2016-06-01 2018-11-28 旭化成株式会社 集合体
KR102562899B1 (ko) 2016-06-02 2023-08-04 삼성디스플레이 주식회사 발광 소자
CN105977389A (zh) * 2016-06-07 2016-09-28 昆明理工大学 一种钙钛矿光吸收材料及其制备方法
KR102600473B1 (ko) 2016-06-09 2023-11-13 삼성디스플레이 주식회사 조명장치
TR201608131A2 (tr) * 2016-06-15 2016-08-22 Yenel Esma Lületaşi bi̇leşenleri̇ üzeri̇ne oluşturulan yeni̇ perovski̇t duyarli güneş hücresi̇
JP6941099B2 (ja) * 2016-06-24 2021-09-29 住友化学株式会社 組成物、及び化合物
CN109311691B (zh) * 2016-06-24 2021-12-28 住友化学株式会社 化合物、分散液组合物及树脂组合物
WO2018005749A1 (en) * 2016-06-29 2018-01-04 Alliance For Sustainable Energy, Llc Methods for making perovskite solar cells having improved hole-transport layers
JP6431134B2 (ja) * 2016-07-12 2018-11-28 旭化成株式会社 組成物
CN106058055A (zh) * 2016-07-19 2016-10-26 同济大学 二维层状有机‑无机复合钙钛矿材料光探测器及制作方法
EP3272757A1 (en) * 2016-07-21 2018-01-24 Ecole Polytechnique Fédérale de Lausanne (EPFL) Mixed cation perovskite solid state solar cell and fabrication thereof
KR101810155B1 (ko) * 2016-07-29 2017-12-19 울산과학기술원 고효율 페로브스카이트 화합물계 막의 제조방법 및 이를 포함하는 태양전지
EP3500577B1 (en) 2016-08-22 2021-12-01 Raynergy Tek Inc. Organic semiconducting compounds
JP6181261B1 (ja) * 2016-09-13 2017-08-16 株式会社東芝 光電変換素子
KR20180033074A (ko) * 2016-09-23 2018-04-02 주식회사 엘지화학 유-무기 복합 태양전지 및 유-무기 복합 태양전지 제조방법
WO2018056667A1 (ko) * 2016-09-23 2018-03-29 주식회사 엘지화학 유-무기 복합 태양전지 및 유-무기 복합 태양전지 제조방법
WO2018064235A1 (en) * 2016-09-27 2018-04-05 Massachusetts Institute Of Technology Tunable light emitting diodes utilizing quantum-confined layered perovskite emitters
US10796901B2 (en) * 2016-09-29 2020-10-06 Nanoco Technologies Ltd. Shelling of halide perovskite nanoparticles for the prevention of anion exchange
KR102629585B1 (ko) * 2016-10-04 2024-01-25 삼성전자주식회사 광전 변환 소자 및 이를 포함하는 촬상 장치
EP3306690B1 (en) 2016-10-05 2022-09-07 Raynergy Tek Inc. Organic semiconducting compounds
JP2019531380A (ja) 2016-10-05 2019-10-31 メルク パテント ゲーエムベーハー 有機半導体化合物
WO2018065350A1 (en) 2016-10-05 2018-04-12 Merck Patent Gmbh Organic semiconducting compounds
US10611783B2 (en) 2016-10-14 2020-04-07 Alliance For Sustainable Energy, Llc Oriented perovskite crystals and methods of making the same
WO2018078080A1 (en) 2016-10-31 2018-05-03 Merck Patent Gmbh Organic semiconducting compounds
KR102626917B1 (ko) * 2016-11-24 2024-01-18 삼성전자주식회사 나노결정, 그 제조방법 및 광전자 소자
CN106753336B (zh) * 2016-11-25 2019-08-06 首都师范大学 一种多色卤素钙钛矿荧光材料的制备方法和应用
CN106748885A (zh) * 2016-12-05 2017-05-31 天津市职业大学 一种钙钛矿太阳电池用卤化甲脒铅的生产方法
CN108148073B (zh) 2016-12-06 2023-12-08 天光材料科技股份有限公司 有机半导体化合物
CN106757371A (zh) * 2016-12-19 2017-05-31 山东大学 一种基于甲胺气氛的有机无机复合钙钛矿单晶诱导转变方法及装置
KR102162547B1 (ko) * 2017-01-26 2020-10-08 울산과학기술원 4가 금속 이온을 함유하는 칼코젠화 유무기 페로브스카이트 화합물 및 이의 제조방법
US10651408B2 (en) * 2017-02-14 2020-05-12 International Business Machines Corporation Selenium-fullerene heterojunction solar cell
GB2559800B (en) 2017-02-20 2019-06-12 Oxford Photovoltaics Ltd Multijunction photovoltaic device
JP6378383B1 (ja) 2017-03-07 2018-08-22 株式会社東芝 半導体素子およびその製造方法
EP3592748A1 (en) 2017-03-09 2020-01-15 Merck Patent GmbH Organic semiconducting compounds
EP3379592B1 (en) 2017-03-17 2023-02-22 Samsung Electronics Co., Ltd. Photoelectric conversion device including perovskite compound, method of manufacturing the same, and imaging device including the same
JP6960233B2 (ja) * 2017-03-24 2021-11-05 株式会社カネカ 太陽電池モジュール
US11205735B2 (en) 2017-05-05 2021-12-21 Universidad De Antioquia Low temperature p-i-n hybrid mesoporous optoelectronic device
EP3399564A1 (en) * 2017-05-05 2018-11-07 Ecole Polytechnique Fédérale de Lausanne (EPFL) Inorganic hole conductor based perovskite photoelectric conversion device with high operational stability at long term
CN107266337B (zh) * 2017-05-12 2019-11-19 上海大学 钙钛矿发光材料甲脒溴化铅纳米晶的低温快速制备方法
EP3401305A1 (en) 2017-05-12 2018-11-14 Dottikon Es Holding Ag Indane derivatives and their use in organic electronics
TWI774767B (zh) 2017-05-12 2022-08-21 瑞士商多蒂孔股份有限公司 茚烷衍生物及其在有機電子產品的用途
WO2019005663A1 (en) 2017-06-30 2019-01-03 Northwestern University ORGANIC-INORGANIC HYBRID PERROSKITE COMPOUNDS
KR101962848B1 (ko) * 2017-07-17 2019-03-27 포항공과대학교 산학협력단 비대칭 알킬기가 치환된 유기 반도체 화합물 및 이를 포함하는 태양전지
CN109285846B (zh) 2017-07-20 2023-10-13 松下知识产权经营株式会社 光传感器及使用它的光检测装置
EP3665729B1 (en) 2017-08-11 2021-07-07 Raynergy Tek Inc. Organic semiconducting polymer
US20200361955A1 (en) 2017-09-13 2020-11-19 Raynergy Tek Incorporation Organic semiconducting compounds
KR102125008B1 (ko) * 2017-09-13 2020-06-22 아주대학교산학협력단 비풀러렌 전자 전달 물질 및 이를 이용한 페로브스카이트 태양전지
KR101952154B1 (ko) * 2017-09-22 2019-02-26 포항공과대학교 산학협력단 다양한 환경에서 사용가능한 인공잎 장치 및 이의 제조방법
US10553367B2 (en) * 2017-10-20 2020-02-04 Qatar Foundation Photovoltaic perovskite oxychalcogenide material and optoelectronic devices including the same
US11649321B2 (en) 2017-11-02 2023-05-16 Raynergy Tek Incorporation Organic semiconducting compounds
JP7165412B2 (ja) 2017-11-06 2022-11-04 株式会社Kyulux 有機無機ペロブスカイト、膜、発光膜、遅延蛍光放射膜、発光素子および発光素子の製造方法
CN111315797A (zh) 2017-11-10 2020-06-19 默克专利股份有限公司 有机半导体化合物
EP3486960A1 (en) 2017-11-20 2019-05-22 Universidad De Córdoba Optoelectronic device comprising guanidinium in the organic-inorganic perovskite
CN108023019B (zh) * 2017-12-19 2024-01-02 北京大学深圳研究生院 一种钙钛矿光电晶体管及其制备方法
KR101945814B1 (ko) 2017-12-20 2019-02-08 성균관대학교산학협력단 저항 변화 메모리 소자 및 이의 제조 방법
US11094884B2 (en) * 2018-01-12 2021-08-17 The Board Of Trustees Of The University Of Alabama Rapid metal oxide layer-specific photonic treatment using UV LED for fabrication of flexible perovskite structures
WO2019154973A1 (en) 2018-02-12 2019-08-15 Merck Patent Gmbh Organic semiconducting compounds
KR102528301B1 (ko) 2018-02-26 2023-05-04 삼성디스플레이 주식회사 전자 장치 및 조명 장치
CN108400195A (zh) * 2018-03-06 2018-08-14 郑州大学 一种基于Cs2AgBiBr6薄膜的光电导型探测器及制备方法
CN112236882B (zh) 2018-03-28 2023-06-30 天光材料科技股份有限公司 有机半导体化合物
CN112352328B (zh) 2018-03-28 2023-09-22 天光材料科技股份有限公司 有机半导体化合物
CN108493341A (zh) * 2018-03-30 2018-09-04 苏州大学 以五氧化二钽作为电子传输层的钙钛矿太阳能电池的制备
CN112368316A (zh) 2018-04-27 2021-02-12 天光材料科技股份有限公司 有机半导体聚合物
US12247126B2 (en) 2018-05-09 2025-03-11 Board Of Trustees Of Michigan State University Near-infrared harvesting transparent luminescent solar concentrators with engineered stokes shift
CN108807986B (zh) * 2018-05-28 2020-10-30 河南工程学院 一种碱式氯化铅微纳结构晶体的制备方法
US20210257167A1 (en) * 2018-06-19 2021-08-19 Kao Corporation Layered perovskite, light absorption layer, light-absorption-layer-equipped substrate, photoelectric conversion element, and solar cell
GB201811537D0 (en) * 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Turnable blue emitting lead halide perovskites
GB201811538D0 (en) 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Stabilised a/m/x materials
WO2020011831A1 (en) 2018-07-13 2020-01-16 Merck Patent Gmbh Organic semiconducting compounds
GB201811539D0 (en) 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Fabrication process for a/m/x materials
WO2020018626A1 (en) 2018-07-18 2020-01-23 Massachusetts Institute Of Technology Alternating multi-source vapor transport deposition
CN108987522A (zh) * 2018-07-25 2018-12-11 京东方科技集团股份有限公司 一种光电传感器、光电传感组件及其制作方法
IT201800008110A1 (it) * 2018-08-17 2020-02-17 Eni Spa Dispositivi fotovoltaici comprendenti concentratori solari luminescenti e celle fotovoltaiche a base di perovskite
WO2020048939A1 (en) 2018-09-06 2020-03-12 Merck Patent Gmbh Organic semiconducting compounds
WO2020068670A1 (en) 2018-09-24 2020-04-02 Board Of Trustees Of Michigan State University Transparent luminescent solar concentrator
CN109216560B (zh) * 2018-10-17 2021-02-09 重庆大学 一种具有硫化铟薄膜的无机钙钛矿太阳能电池制备方法及其产品
EP3650438A1 (en) 2018-11-09 2020-05-13 Dottikon Es Holding Ag Di-, tri- and tetraphenylindane derivatives and their use in organic electronics
US10907050B2 (en) 2018-11-21 2021-02-02 Hee Solar, L.L.C. Nickel oxide sol-gel ink
CN109394235B (zh) * 2018-11-27 2022-02-08 浙江清华柔性电子技术研究院 柔性血氧传感器及其制作方法
GB201820427D0 (en) 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
FI130068B (en) * 2018-12-31 2023-01-31 Aalto Univ Foundation Sr Double-sided solar cell unit
JP6628119B1 (ja) * 2019-01-08 2020-01-08 パナソニックＩｐマネジメント株式会社 太陽電池
WO2020144885A1 (ja) * 2019-01-08 2020-07-16 パナソニックＩｐマネジメント株式会社 太陽電池
US10727428B1 (en) * 2019-02-01 2020-07-28 Natioinal Technology & Engineering Solutions Of Sa Organic-semiconducting hybrid solar cell
WO2020161052A1 (en) 2019-02-06 2020-08-13 Merck Patent Gmbh Organic semiconducting polymers
WO2020178298A1 (en) 2019-03-07 2020-09-10 Raynergy Tek Inc. Organic semiconducting composition
PL429454A1 (pl) * 2019-04-02 2020-10-05 Saule Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania jodków organicznych, kompozycja perowskitotwórcza z jodkiem organicznym otrzymanym tym sposobem oraz ogniwo fotowoltaiczne z warstwą perowskitową wytworzoną z tej kompozycji
GB2583965A (en) 2019-05-16 2020-11-18 Oxford Photovoltaics Ltd Photovoltaic device
CN114342085A (zh) * 2019-06-12 2022-04-12 艾维·马武西·阿索 掺杂混合阳离子钙钛矿材料及利用其的器件
CN110491996B (zh) * 2019-07-09 2022-08-05 中南民族大学 一种基于氨基喹啉类离子液体的二维碳基钙钛矿太阳能电池
EP3764406A1 (en) 2019-07-11 2021-01-13 Oxford Photovoltaics Limited Multi-junction photovoltaic device
KR102272548B1 (ko) * 2019-08-08 2021-07-05 고려대학교 산학협력단 페로브스카이트 광전소자 및 이의 제조방법
WO2021038897A1 (ja) * 2019-08-27 2021-03-04 パナソニックＩｐマネジメント株式会社 太陽電池
US20210104686A1 (en) * 2019-10-03 2021-04-08 The University Of Toledo Materials and Methods to Improve the Stability of Metal Halide Perovskites
JP2021132108A (ja) * 2020-02-19 2021-09-09 シャープ株式会社 光電変換素子、及び光電変換素子の製造方法
WO2021187341A1 (ja) * 2020-03-19 2021-09-23 キヤノン株式会社 光電変換素子、該光電変換素子を有する光電変換装置
CN111430547B (zh) * 2020-03-19 2023-10-17 电子科技大学 一种基于虾青素阴极缓冲层的有机太阳能电池及其制备方法
US20230171974A1 (en) * 2020-05-28 2023-06-01 Japan Science And Technology Agency Core-shell particle, composite, light-receiving member for photoelectric conversion element, and photoelectric conversion element
WO2021255468A1 (en) 2020-06-18 2021-12-23 Oxford Photovoltaics Limited Multijunction photovoltaic devices with metal oxynitride layer
CN113823747A (zh) * 2020-06-18 2021-12-21 Tcl科技集团股份有限公司 纳米材料及其制备方法和发光二极管
JP7642640B2 (ja) * 2020-07-02 2025-03-10 積水化学工業株式会社 太陽電池
KR20230068438A (ko) 2020-09-22 2023-05-17 케일룩스 코포레이션 통합 탠덤 태양광 모듈 제작을 위한 방법 및 소자
TWI765376B (zh) 2020-10-20 2022-05-21 財團法人工業技術研究院 鈣鈦礦薄膜及其前驅組成物、鈣鈦礦薄膜製備方法、包括此薄膜之半導體元件
WO2022104483A1 (en) * 2020-11-23 2022-05-27 Solaires Entreprises Inc. 2d/3d alloyed halide perovskites: method for their preparation and use in solar cells
KR102513963B1 (ko) * 2021-01-12 2023-03-23 동서대학교 산학협력단 광전기화학 물분해(Photoelectrochemical water splitting)용 P(NDI2OD-T2)광전극 제조방법
KR102862451B1 (ko) 2021-03-16 2025-09-24 주성엔지니어링(주) 태양 전지 및 그 제조 방법
CN115838592A (zh) * 2021-08-23 2023-03-24 中国科学院福建物质结构研究所 一种二维锡基钙钛矿材料及其制备方法和应用
CN115710495B (zh) * 2021-08-23 2025-01-14 中国科学院福建物质结构研究所 一种二维非铅钙钛矿材料及其制备方法和应用
CN113937245B (zh) * 2021-09-03 2023-09-01 华中科技大学 一种高效白光有机无机杂化锌基二维钙钛矿材料与制备
GB202114040D0 (en) 2021-09-30 2021-11-17 Oxford Photovoltaics Ltd Perovskite materials and their use in photocoltaic devices
KR20240105395A (ko) 2021-11-04 2024-07-05 도티콘 이에스 홀딩 아게 스피로-(인단-플루오렌) 타입의 화합물 및 유기 전자장치에서의 이의 용도
KR102855891B1 (ko) * 2021-11-30 2025-09-04 한국화학연구원 비대칭 n형 유기 반도체 화합물, 이의 제조방법 및 이를 함유하는 유기 광 검출기
GB202203452D0 (en) 2022-03-11 2022-04-27 Oxford Photovoltaics Ltd Sequential deposition of perovskites
CN119301295A (zh) 2022-03-11 2025-01-10 牛津光伏有限公司 用于制备多组分钙钛矿的方法
WO2023247416A1 (en) 2022-06-21 2023-12-28 Dottikon Es Holding Ag Tetraarylbenzidine type compounds and their use in organic electronics
CN114975792B (zh) * 2022-07-27 2022-11-15 中国华能集团清洁能源技术研究院有限公司 一种钙钛矿太阳能电池及其制备方法
TWI827340B (zh) * 2022-11-04 2023-12-21 國立清華大學 鈣鈦礦太陽能電池及其製造方法
WO2024191096A1 (ko) * 2023-03-10 2024-09-19 포항공과대학교 산학협력단 준할라이드 첨가제를 포함하는 페로브스카이트 복합체, 그를 포함하는 전자소자 및 그의 제조방법

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3323324B2 (ja) 1993-06-18 2002-09-09 株式会社リコー 発光ダイオードおよび発光ダイオードアレイ
US5721634A (en) 1996-10-09 1998-02-24 Boeing North American, Inc. Cesium-germanium halide salts forming nonlinear optical crystals
US5882548A (en) 1997-05-08 1999-03-16 International Business Machines Corporation Luminescent organic-inorganic perovskites with a divalent rare earth metal halide framework
JP3693468B2 (ja) 1997-07-23 2005-09-07 シャープ株式会社 半導体発光素子
US5871579A (en) 1997-09-25 1999-02-16 International Business Machines Corporation Two-step dipping technique for the preparation of organic-inorganic perovskite thin films
US6027666A (en) 1998-06-05 2000-02-22 The Governing Council Of The University Of Toronto Fast luminescent silicon
US6180956B1 (en) 1999-03-03 2001-01-30 International Business Machine Corp. Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
US6420056B1 (en) 1999-07-08 2002-07-16 International Business Machines Corporation Electroluminescent device with dye-containing organic-inorganic hybrid materials as an emitting layer
US6150536A (en) 1999-07-08 2000-11-21 International Business Machines Corporation Dye doped organic-inorganic hybrid materials
EP1087412B1 (en) 1999-09-24 2008-10-01 Kabushiki Kaisha Toshiba Electrolyte composition, photosensitized solar cell using said electrolyte composition, and method of manufacturing photosensitized solar cell
JP2001148491A (ja) 1999-11-19 2001-05-29 Fuji Xerox Co Ltd 光電変換素子
US6429318B1 (en) 2000-02-07 2002-08-06 International Business Machines Corporaiton Layered organic-inorganic perovskites having metal-deficient inorganic frameworks
JP3542077B2 (ja) 2000-09-08 2004-07-14 独立行政法人 科学技術振興機構 有機アンモニウム・無機層状ペロブスカイト化合物とその製造方法
JP4278080B2 (ja) 2000-09-27 2009-06-10 富士フイルム株式会社 高感度受光素子及びイメージセンサー
JP2002198551A (ja) 2000-12-27 2002-07-12 Mitsubishi Heavy Ind Ltd 光電変換素子とそれを用いた光電変換装置及び光電変換素子の製造方法
JP2002299063A (ja) 2001-04-03 2002-10-11 Japan Science & Technology Corp 臭化鉛系層状ペロブスカイト化合物を発光層とした電界発光素子
US6709929B2 (en) 2001-06-25 2004-03-23 North Carolina State University Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates
JP4729203B2 (ja) * 2001-07-25 2011-07-20 独立行政法人科学技術振興機構 ハロゲン化鉛系層状ペロブスカイト化合物の燐光を利用した電界発光素子
EP1289030A1 (en) * 2001-09-04 2003-03-05 Sony International (Europe) GmbH Doping of a hole transporting material
EP1837930A1 (en) * 2001-09-04 2007-09-26 Sony Deutschland GmbH Photovoltaic device and method for preparing the same
JP3779596B2 (ja) 2001-11-16 2006-05-31 独立行政法人科学技術振興機構 ポジトロンエミッショントモグラフィ装置
JP4010170B2 (ja) 2002-04-11 2007-11-21 ソニー株式会社 光電変換素子の製造方法
JP4086037B2 (ja) 2002-06-14 2008-05-14 松下電工株式会社 光電変換素子の製造方法
US20060162767A1 (en) 2002-08-16 2006-07-27 Angelo Mascarenhas Multi-junction, monolithic solar cell with active silicon substrate
JP4259081B2 (ja) 2002-10-10 2009-04-30 セイコーエプソン株式会社 半導体装置の製造方法
EP1550742A4 (en) 2002-10-10 2007-01-03 Kansai Paint Co Ltd METHOD FOR PRODUCING A SEMICONDUCTOR FILM AND USE OF SEMICONDUCTOR FILM
US6995445B2 (en) 2003-03-14 2006-02-07 The Trustees Of Princeton University Thin film organic position sensitive detectors
US7741559B2 (en) * 2003-05-13 2010-06-22 Asahi Kasei Kabushiki Kaisha Photoelectric conversion element
WO2004112440A1 (ja) 2003-06-13 2004-12-23 Matsushita Electric Industrial Co., Ltd. 発光素子及びその製造方法、表示装置
JP4191566B2 (ja) 2003-09-12 2008-12-03 アトミック エナジー カウンセル − インスティトゥート オブ ニュークリアー エナジー リサーチ 電流ブロック構造を有する発光ダイオードおよびその製造方法
US7045205B1 (en) 2004-02-19 2006-05-16 Nanosolar, Inc. Device based on coated nanoporous structure
WO2005114748A2 (en) 2004-04-13 2005-12-01 Solaris Nanosciences, Inc. Plasmon enhanced sensitized photovoltaic cells
US8592680B2 (en) 2004-08-11 2013-11-26 The Trustees Of Princeton University Organic photosensitive devices
WO2006034561A1 (en) 2004-09-27 2006-04-06 The State Scientific Institution 'institute Of Molecular And Atomic Physics Of The National Academy Of Science Of Belarus' High-efficient small-aperture light converter
EP1724838A1 (en) 2005-05-17 2006-11-22 Ecole Polytechnique Federale De Lausanne Tandem photovoltaic conversion device
JP2007031178A (ja) 2005-07-25 2007-02-08 Utsunomiya Univ ＣｄＴｅ系酸化物薄膜及びその形成方法
US8034745B2 (en) 2005-08-01 2011-10-11 Amit Goyal High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods
JP2007095488A (ja) 2005-09-29 2007-04-12 Toshiba Corp 発光素子およびその製造方法
EP2007843B1 (en) 2006-04-03 2009-12-02 Philips Intellectual Property & Standards GmbH Organic electroluminescent device
JP5084730B2 (ja) 2006-07-05 2012-11-28 日本化薬株式会社 色素増感太陽電池
TW200821321A (en) * 2006-11-14 2008-05-16 Ind Tech Res Inst Ruthenium complexes with tridentate heterocyclic chelate and dye-sensitized solar cells using the same as dye-sensitizers
KR100839371B1 (ko) * 2006-11-17 2008-06-19 삼성에스디아이 주식회사 염료감응 태양전지
KR100838158B1 (ko) 2007-01-04 2008-06-13 한국과학기술연구원 메조 다공성 금속산화물 박막을 포함하는 염료감응태양전지용 광전극 및 이의 제조방법
JP2008189947A (ja) 2007-01-31 2008-08-21 National Institute For Materials Science ペロブスカイト薄膜及びその製造方法
KR20080079894A (ko) 2007-02-28 2008-09-02 삼성에스디아이 주식회사 염료감응 태양전지 및 이의 제조방법
JP2008227330A (ja) * 2007-03-15 2008-09-25 Canon Inc 発光素子
JP2009006548A (ja) 2007-06-27 2009-01-15 Saga Univ 有機無機層状ペロブスカイト化合物薄膜及びその作製方法
US8440908B2 (en) 2007-07-25 2013-05-14 Polymers Crc Ltd. Solar cell and method for preparation thereof
US20090032097A1 (en) 2007-07-31 2009-02-05 Bigioni Terry P Enhancement of dye-sensitized solar cells using colloidal metal nanoparticles
KR20090052696A (ko) 2007-11-21 2009-05-26 한국전자통신연구원 ｐ－ｎ 접합 다이오드를 포함하는 기판을 구비한 염료감응태양전지
US8193704B2 (en) 2008-02-19 2012-06-05 National Institute Of Advanced Industrial Science And Technology Perovskite oxide thin film EL element
JP5285062B2 (ja) 2008-03-19 2013-09-11 シャープ株式会社 光増感素子及びそれを用いた太陽電池
WO2009127692A2 (en) * 2008-04-18 2009-10-22 Nanologica Ab Solar to electric energy conversion device
JP2010009786A (ja) 2008-06-24 2010-01-14 Sharp Corp 色素増感型太陽電池および色素増感型太陽電池モジュール
CN101635203B (zh) 2008-07-27 2011-09-28 比亚迪股份有限公司 一种半导体电极及制法和含有该半导体电极的太阳能电池
JP2010103500A (ja) * 2008-09-26 2010-05-06 Toppan Printing Co Ltd 有機電界発光素子及びその製造方法、画像表示装置、照明装置
TW201032340A (en) 2009-02-26 2010-09-01 Nat Applied Res Laboratories A silicon quantum dot near-infrared phototransistor detector
US20110089402A1 (en) 2009-04-10 2011-04-21 Pengfei Qi Composite Nanorod-Based Structures for Generating Electricity
KR101061970B1 (ko) 2009-05-25 2011-09-05 한국과학기술연구원 전도성 비금속 필름을 이용한 광전극 및 이를 포함하는 염료감응 태양전지
KR101174088B1 (ko) 2009-06-25 2012-08-14 제일모직주식회사 유기광전소자용 화합물 및 이를 포함하는 유기광전소자
GB0916037D0 (en) 2009-09-11 2009-10-28 Isis Innovation Device
JP5489621B2 (ja) 2009-09-29 2014-05-14 ヤヱガキ醗酵技研株式会社 光電変換素子とその光電変換素子を用いた光発電装置
GB0920918D0 (en) 2009-11-27 2010-01-13 Isis Innovation Device
WO2011071738A2 (en) 2009-12-08 2011-06-16 OmniPV, Inc. Luminescent materials that emit light in the visible range or the near infrared range and methods of forming thereof
KR101068131B1 (ko) * 2009-12-29 2011-09-28 한국화학연구원 광양극 양자점 감응형 태양전지 및 광양극 제조방법
EP2560212B1 (en) 2010-02-18 2019-06-12 Korea Research Institute Of Chemical Technology Method for manufacturing a nanostructured inorganic/organic heterojunction solar cell
GB201004106D0 (en) 2010-03-11 2010-04-28 Isis Innovation Device
JP5621488B2 (ja) 2010-03-17 2014-11-12 ソニー株式会社 光電変換装置
JP2011238472A (ja) 2010-05-11 2011-11-24 Sony Corp 光電変換装置
US8907205B2 (en) 2010-06-18 2014-12-09 Institut National De La Recherche Scientifique (Inrs) Combined Pn junction and bulk photovoltaic device
CN102468413B (zh) 2010-11-09 2014-10-29 四川新力光源股份有限公司 一种交流led发光装置
GB201020209D0 (en) 2010-11-29 2011-01-12 Isis Innovation Device
KR101172374B1 (ko) 2011-02-14 2012-08-08 성균관대학교산학협력단 페로브스카이트계 염료를 이용한 염료감응 태양 전지 및 이의 제조방법
US20120048329A1 (en) 2011-06-02 2012-03-01 Lalita Manchanda Charge-coupled photovoltaic devices
US9484475B2 (en) 2011-10-11 2016-11-01 The Trustees Of The University Of Pennsylvania Semiconductor ferroelectric compositions and their use in photovoltaic devices
US9181475B2 (en) 2012-02-21 2015-11-10 Northwestern University Photoluminescent compounds
GB201203881D0 (en) 2012-03-05 2012-04-18 Isis Innovation Mesoporous single crystal semiconductore
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
WO2013171520A1 (en) 2012-05-18 2013-11-21 Isis Innovation Limited Optoelectronic device comprising perovskites
PL2850627T3 (pl) 2012-05-18 2016-10-31 Urządzenie optoelektroniczne zawierające porowaty materiał rusztowania oraz perowskity
EP2693503A1 (en) 2012-08-03 2014-02-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Organo metal halide perovskite heterojunction solar cell and fabrication thereof
WO2014042449A2 (ko) 2012-09-12 2014-03-20 한국화학연구원 광흡수 구조체가 구비된 태양전지
GB201216605D0 (en) 2012-09-18 2012-10-31 Isis Innovation Optoelectronic device
HUE059781T2 (hu) 2012-09-18 2022-12-28 Univ Oxford Innovation Ltd Optoelektronikai eszköz
GB201309409D0 (en) 2013-05-24 2013-07-10 Isis Innovation Optoelectronic device
WO2015177770A2 (en) * 2014-05-23 2015-11-26 Ecole Polytechnique Federale De Lausanne (Epfl) Nanowires of organic-inorganic perovskites

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