DK2668136T3 - Fremgangsmåde til fremstilling af tinoxid af høj renhed - Google Patents
Fremgangsmåde til fremstilling af tinoxid af høj renhed Download PDFInfo
- Publication number
- DK2668136T3 DK2668136T3 DK12739986.3T DK12739986T DK2668136T3 DK 2668136 T3 DK2668136 T3 DK 2668136T3 DK 12739986 T DK12739986 T DK 12739986T DK 2668136 T3 DK2668136 T3 DK 2668136T3
- Authority
- DK
- Denmark
- Prior art keywords
- sno
- dicarboxylate complex
- high purity
- washed
- weight
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Claims (9)
1. Fremgangsmåde til fremstilling af SnO, der omfatter: (a) at reagere et Sn salt med en C2-12 dicarboxylsyre i den vandige fase for at danne en opslæmning, som omfatter et Sn-dicarboxylatkompleks; (b) at vaske Sn-dicarboxylatkomplekset med vand for at opnå en vaskeopløsning og et vasket Sn-dicarboxylatkompleks, hvorved en koncentration af anionen af Sn saltet i det vaskede Sn-dicarboxylatkompleks er mindre end 1 % efter vægt, hvorved vaskningen af Sn-dicarboxylatkomplekset fortsætter, indtil vaskeopløsningen har et neutralt pH; og (c) at reagere det vaskede Sn-dicarboxylatkompleks med en base for at danne SnO, hvorved SnO'en har en alfastrålingstælling på mindre end 0,002 cph/cm2, og hvorved SnO'en har en renhed på i det mindste 99 % efter vægt, undtagen en hvilken som helst tilstedeværende Sn02.
2. Fremgangsmåde ifølge krav 1, hvorved Sn saltet er valgt fra gruppen, der består af SnCl2, Sn(BF4)2, Sn(CH3S03)2 og blandinger deraf.
3. Fremgangsmåde ifølge krav 1, hvorved dicarboxylsyren er valgt fra gruppen, der består af oxalsyre, malonsyre, ravsyre, glutarsyre og blandinger deraf.
4. Fremgangsmåde ifølge krav 1, hvorved basen er valgt fra gruppen, der består af vandig ammoniak, ammoniumcarbonat og urea.
5. Fremgangsmåde ifølge krav 1, hvorved trinnet af at vaske Sn-dicarboxylaten fortsætter, indtil koncentrationen af anionen fra Sn saltet i det vaskede Sn-dicarboxylatkompleks er mindre end 0,1 % efter vægt.
6. Fremgangsmåde ifølge krav 1, der yderligere omfatter trinnet af at isolere Sn-dicarboxylatkomplekset ved filtrering forud for trinnet af at vaske Sn-dicarboxylatkomplekset.
7. Fremgangsmåde ifølge krav 1, der yderligere omfatter trinnet af at isolere SnO'en ved filtrering.
8. Fremgangsmåde ifølge krav 1, hvorved SnO'en omfatter Sn02 i en mængde, der er mindre end 1 % efter vægt.
9. Fremgangsmåde ifølge krav 1, hvorved SnO'en omfatter SnO i en mængde af 99,85 % efter vægt, undtagen Sn02, og hvorved SnO'en omfatter Sn02 i en mængde, der er mindre end 1 % efter vægt.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161436695P | 2011-01-27 | 2011-01-27 | |
| US201161531447P | 2011-09-06 | 2011-09-06 | |
| US13/358,561 US8277774B2 (en) | 2011-01-27 | 2012-01-26 | Method for the preparation of high purity stannous oxide |
| PCT/US2012/022821 WO2012103396A2 (en) | 2011-01-27 | 2012-01-27 | Method for the preparation of high purity stannous oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK2668136T3 true DK2668136T3 (da) | 2018-07-23 |
Family
ID=46577516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK12739986.3T DK2668136T3 (da) | 2011-01-27 | 2012-01-27 | Fremgangsmåde til fremstilling af tinoxid af høj renhed |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US8277774B2 (da) |
| EP (1) | EP2668136B1 (da) |
| JP (1) | JP5934254B2 (da) |
| CN (1) | CN103562134B (da) |
| DK (1) | DK2668136T3 (da) |
| ES (1) | ES2675933T3 (da) |
| PL (1) | PL2668136T3 (da) |
| PT (1) | PT2668136T (da) |
| RU (1) | RU2595697C2 (da) |
| TR (1) | TR201809454T4 (da) |
| WO (1) | WO2012103396A2 (da) |
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| JP6095929B2 (ja) * | 2011-09-30 | 2017-03-15 | ダウ グローバル テクノロジーズ エルエルシー | 複数のＳｎＯフレーク |
| JP6104549B2 (ja) * | 2011-09-30 | 2017-03-29 | ダウ グローバル テクノロジーズ エルエルシー | ＳｎＯを製造する方法 |
| US8993978B2 (en) | 2012-05-04 | 2015-03-31 | Honeywell International Inc. | Method for assessing an alpha particle emission potential of A metallic material |
| KR20160094385A (ko) | 2013-12-05 | 2016-08-09 | 허니웰 인터내셔날 인코포레이티드 | 조절된 pH를 갖는 주석(II) 메탄술포네이트 용액 |
| CN103833069B (zh) * | 2013-12-20 | 2016-04-20 | 柳州百韧特先进材料有限公司 | 一种利用甲基磺酸亚锡含锡废液制备氧化亚锡的方法 |
| JP6569237B2 (ja) * | 2014-03-06 | 2019-09-04 | 三菱マテリアル株式会社 | 酸化第一錫の製造方法、Ｓｎめっき液の製造方法 |
| CN106536609B (zh) | 2014-07-07 | 2022-04-29 | 霍尼韦尔国际公司 | 具有离子清除剂的热界面材料 |
| US20160097139A1 (en) | 2014-10-02 | 2016-04-07 | Jx Nippon Mining & Metals Corporation | Method For Manufacturing High Purity Tin, Electrowinning Apparatus For High Purity Tin And High Purity Tin |
| EP3227399B1 (en) | 2014-12-05 | 2021-07-14 | Honeywell International Inc. | High performance thermal interface materials with low thermal impedance |
| TWI651415B (zh) | 2015-10-19 | 2019-02-21 | 日商Ｊｘ金屬股份有限公司 | 高純度錫及其製造方法 |
| US10312177B2 (en) | 2015-11-17 | 2019-06-04 | Honeywell International Inc. | Thermal interface materials including a coloring agent |
| US9546433B1 (en) | 2015-11-24 | 2017-01-17 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
| US9359687B1 (en) | 2015-11-24 | 2016-06-07 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
| US9425164B1 (en) | 2015-11-24 | 2016-08-23 | International Business Machines Corporation | Low alpha tin |
| US10781349B2 (en) | 2016-03-08 | 2020-09-22 | Honeywell International Inc. | Thermal interface material including crosslinker and multiple fillers |
| US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
| CN106966426B (zh) * | 2017-04-21 | 2018-11-16 | 浙江百传网络科技有限公司 | 一种纳米多孔氧化亚锡的制备方法 |
| US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
| US10428256B2 (en) | 2017-10-23 | 2019-10-01 | Honeywell International Inc. | Releasable thermal gel |
| US12297121B2 (en) * | 2017-11-15 | 2025-05-13 | Jx Advanced Metals Corporation | Stannous oxide powder and method for producing same |
| US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
| US11981581B2 (en) | 2018-03-05 | 2024-05-14 | Jx Metals Corporation | Stannous oxide powder |
| CN110944945A (zh) | 2018-07-25 | 2020-03-31 | Ｊｘ金属株式会社 | 一氧化锡粉末 |
| WO2020026745A1 (ja) * | 2018-07-30 | 2020-02-06 | 三菱マテリアル株式会社 | 低α線放出量の酸化第一錫及びその製造方法 |
| JP7314658B2 (ja) * | 2018-07-30 | 2023-07-26 | 三菱マテリアル株式会社 | 低α線放出量の酸化第一錫の製造方法 |
| GB201812664D0 (en) * | 2018-08-03 | 2018-09-19 | Imperial Innovations Ltd | Recycling of lead-and tin-based materials |
| US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
| CN111138271A (zh) * | 2020-01-20 | 2020-05-12 | 太原理工大学 | 一种有机金属盐添加剂的制备方法 |
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| SU77936A1 (ru) * | 1947-05-14 | 1948-11-30 | И.Г. Губанов | Способ получени окиси олова анодным растворением металлического олова |
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-
2012
- 2012-01-26 US US13/358,561 patent/US8277774B2/en active Active
- 2012-01-27 TR TR2018/09454T patent/TR201809454T4/tr unknown
- 2012-01-27 ES ES12739986.3T patent/ES2675933T3/es active Active
- 2012-01-27 RU RU2013139466/05A patent/RU2595697C2/ru active
- 2012-01-27 CN CN201280006800.3A patent/CN103562134B/zh active Active
- 2012-01-27 WO PCT/US2012/022821 patent/WO2012103396A2/en not_active Ceased
- 2012-01-27 EP EP12739986.3A patent/EP2668136B1/en active Active
- 2012-01-27 PT PT127399863T patent/PT2668136T/pt unknown
- 2012-01-27 PL PL12739986T patent/PL2668136T3/pl unknown
- 2012-01-27 JP JP2013551353A patent/JP5934254B2/ja active Active
- 2012-01-27 DK DK12739986.3T patent/DK2668136T3/da active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014506554A (ja) | 2014-03-17 |
| RU2013139466A (ru) | 2015-03-10 |
| US8277774B2 (en) | 2012-10-02 |
| EP2668136A2 (en) | 2013-12-04 |
| JP5934254B2 (ja) | 2016-06-15 |
| CN103562134B (zh) | 2016-01-20 |
| TR201809454T4 (tr) | 2018-07-23 |
| ES2675933T3 (es) | 2018-07-13 |
| WO2012103396A2 (en) | 2012-08-02 |
| WO2012103396A3 (en) | 2012-11-08 |
| US20120195822A1 (en) | 2012-08-02 |
| EP2668136B1 (en) | 2018-04-11 |
| CN103562134A (zh) | 2014-02-05 |
| PT2668136T (pt) | 2018-07-04 |
| EP2668136A4 (en) | 2016-07-06 |
| RU2595697C2 (ru) | 2016-08-27 |
| PL2668136T3 (pl) | 2018-10-31 |
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