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DK0793758T3 - Fremgangsmåde til fugtighedstætning af murværk - Google Patents

Fremgangsmåde til fugtighedstætning af murværk

Info

Publication number
DK0793758T3
DK0793758T3 DK95936959T DK95936959T DK0793758T3 DK 0793758 T3 DK0793758 T3 DK 0793758T3 DK 95936959 T DK95936959 T DK 95936959T DK 95936959 T DK95936959 T DK 95936959T DK 0793758 T3 DK0793758 T3 DK 0793758T3
Authority
DK
Denmark
Prior art keywords
channel
masonry
waxy material
floor
moisture sealing
Prior art date
Application number
DK95936959T
Other languages
Danish (da)
English (en)
Inventor
Horst Becker
Original Assignee
Isotec Franchise Systeme Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isotec Franchise Systeme Gmbh filed Critical Isotec Franchise Systeme Gmbh
Application granted granted Critical
Publication of DK0793758T3 publication Critical patent/DK0793758T3/da

Links

Classifications

    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
    • E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
    • E04B1/62—Insulation or other protection; Elements or use of specified material therefor
    • E04B1/64—Insulation or other protection; Elements or use of specified material therefor for making damp-proof; Protection against corrosion
    • E04B1/644—Damp-proof courses
    • E04B1/648—Damp-proof courses obtained by injection or infiltration of water-proofing agents into an existing wall

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Electromagnetism (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Building Environments (AREA)
  • Finishing Walls (AREA)
  • Aftertreatments Of Artificial And Natural Stones (AREA)
  • Drilling And Exploitation, And Mining Machines And Methods (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Chemical And Physical Treatments For Wood And The Like (AREA)
  • Moulds, Cores, Or Mandrels (AREA)
  • Glass Compositions (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
DK95936959T 1994-11-23 1995-11-23 Fremgangsmåde til fugtighedstætning af murværk DK0793758T3 (da)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4441643 1994-11-23
PCT/DE1995/001640 WO1996016237A1 (fr) 1994-11-23 1995-11-23 PROCEDE D'ETANCHEIFICATION CONTRE L'HUMIDITE POUR OUVRAGES DE MAçONNERIE
US08/851,689 US5885865A (en) 1994-11-23 1997-05-06 Method for making low-topography buried capacitor by a two stage etching process and device made

Publications (1)

Publication Number Publication Date
DK0793758T3 true DK0793758T3 (da) 1999-06-28

Family

ID=25942208

Family Applications (1)

Application Number Title Priority Date Filing Date
DK95936959T DK0793758T3 (da) 1994-11-23 1995-11-23 Fremgangsmåde til fugtighedstætning af murværk

Country Status (11)

Country Link
US (1) US5885865A (fr)
EP (1) EP0793758B1 (fr)
AT (1) ATE172510T1 (fr)
CZ (1) CZ292440B6 (fr)
DE (1) DE59504019D1 (fr)
DK (1) DK0793758T3 (fr)
ES (1) ES2124025T3 (fr)
HU (1) HU220002B (fr)
PL (1) PL321190A1 (fr)
RU (1) RU2135716C1 (fr)
WO (1) WO1996016237A1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652170A (en) * 1996-01-22 1997-07-29 Micron Technology, Inc. Method for etching sloped contact openings in polysilicon
US6143276A (en) 1997-03-21 2000-11-07 Imarx Pharmaceutical Corp. Methods for delivering bioactive agents to regions of elevated temperatures
TW421849B (en) * 1998-02-23 2001-02-11 Winbond Electronics Corp Structure of multi-layered dielectric opening and its fabricating method
AT408221B (de) * 1999-06-08 2001-09-25 Niv Spezial Grundbaugesellscha Spezialmörtel zur feuchtigkeitsabdichtung
US6130168A (en) * 1999-07-08 2000-10-10 Taiwan Semiconductor Manufacturing Company Using ONO as hard mask to reduce STI oxide loss on low voltage device in flash or EPROM process
US6258729B1 (en) 1999-09-02 2001-07-10 Micron Technology, Inc. Oxide etching method and structures resulting from same
US6441418B1 (en) * 1999-11-01 2002-08-27 Advanced Micro Devices, Inc. Spacer narrowed, dual width contact for charge gain reduction
US6551923B1 (en) 1999-11-01 2003-04-22 Advanced Micro Devices, Inc. Dual width contact for charge gain reduction
US6242331B1 (en) * 1999-12-20 2001-06-05 Taiwan Semiconductor Manufacturing Company Method to reduce device contact resistance using a hydrogen peroxide treatment
KR100388682B1 (ko) * 2001-03-03 2003-06-25 삼성전자주식회사 반도체 메모리 장치의 스토리지 전극층 및 그 형성방법
US6410955B1 (en) * 2001-04-19 2002-06-25 Micron Technology, Inc. Comb-shaped capacitor for use in integrated circuits
RU2211206C2 (ru) * 2001-05-30 2003-08-27 Закрытое акционерное общество "Астрин" Способ поверхностной гидрофобизации осадочных и метаморфических карбонатных пород
US6888217B2 (en) * 2001-08-30 2005-05-03 Micron Technology, Inc. Capacitor for use in an integrated circuit
GB2386471B (en) * 2001-12-11 2004-04-07 Samsung Electronics Co Ltd A method for fabricating a one-cylinder stack capacitor
KR100434496B1 (ko) * 2001-12-11 2004-06-05 삼성전자주식회사 단일 실린더 스택형 커패시터 및 이중 몰드를 이용한 제조방법
RU2243191C2 (ru) * 2002-04-05 2004-12-27 Научно-исследовательский институт малотоннажных химических продуктов и реактивов Способ гидрофобизации шифера
US7875547B2 (en) * 2005-01-12 2011-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Contact hole structures and contact structures and fabrication methods thereof
KR100855992B1 (ko) * 2007-04-02 2008-09-02 삼성전자주식회사 경사진 측벽을 갖는 활성 필라를 구비하는 비휘발성 메모리트랜지스터, 이를 구비하는 비휘발성 메모리 어레이 및상기 비휘발성 메모리 트랜지스터의 제조방법
DE102017114282A1 (de) * 2017-06-27 2018-12-27 BKM.Mannesmann AG Verfahren zum zerstörungsfreien nachträglichen Einbau einer Horizontalsperre in eine gemauerte Denkmalswand

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE195381C (fr) *
GB852938A (en) * 1958-05-20 1960-11-02 Richardson & Starling Ltd Improvements in and relating to the reduction or prevention of dampness in walls andother permeable surfaces of building structures
GB1177662A (en) * 1967-07-07 1970-01-14 Gallwey Chemical Company Ltd Improvements in or relating to the Damp-Proofing of Walls and Similar Structures.
DE1962974A1 (de) * 1969-12-16 1971-06-24 Lasthaus Josef Wilhelm Verfahren zur Isolierung von Bauwerken gegen aufsteigende Mauerfeuchtigkeit
SU643600A1 (ru) * 1977-10-25 1979-01-25 Полтавский инженерно-строительный институт Способ устройсва гидроизол ции
DE3535654A1 (de) * 1985-10-05 1987-04-23 Friedrich Roehrmann Verfahren zum trocknen und isolieren von feuchtem mauerwerk
GB8723451D0 (en) * 1987-10-06 1987-11-11 Shudell J J Consolidating treatment for decomposing concrete structures
DE4208798C2 (de) * 1992-03-19 2002-09-26 Isotec Franchise Systeme Gmbh Vorrichtung zum Einbringen von heißem Paraffin in Mauerwerk
US5401681A (en) * 1993-02-12 1995-03-28 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells
US5494841A (en) * 1993-10-15 1996-02-27 Micron Semiconductor, Inc. Split-polysilicon CMOS process for multi-megabit dynamic memories incorporating stacked container capacitor cells
US5604147A (en) * 1995-05-12 1997-02-18 Micron Technology, Inc. Method of forming a cylindrical container stacked capacitor

Also Published As

Publication number Publication date
PL321190A1 (en) 1997-11-24
ES2124025T3 (es) 1999-01-16
DE59504019D1 (de) 1998-11-26
RU2135716C1 (ru) 1999-08-27
EP0793758A1 (fr) 1997-09-10
ATE172510T1 (de) 1998-11-15
HUT77580A (hu) 1998-06-29
WO1996016237A1 (fr) 1996-05-30
CZ292440B6 (cs) 2003-09-17
HU220002B (hu) 2001-10-28
CZ143697A3 (en) 1997-10-15
US5885865A (en) 1999-03-23
EP0793758B1 (fr) 1998-10-21

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