DE926987C - Process for the production of thin, cohesive, homogeneous, hexagonal selenium layers on a smooth, translucent base, e.g. B. on glass or quartz glass - Google Patents
Process for the production of thin, cohesive, homogeneous, hexagonal selenium layers on a smooth, translucent base, e.g. B. on glass or quartz glassInfo
- Publication number
- DE926987C DE926987C DEF9219A DEF0009219A DE926987C DE 926987 C DE926987 C DE 926987C DE F9219 A DEF9219 A DE F9219A DE F0009219 A DEF0009219 A DE F0009219A DE 926987 C DE926987 C DE 926987C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- thin
- glass
- homogeneous
- smooth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 28
- 229910052711 selenium Inorganic materials 0.000 title claims description 28
- 239000011669 selenium Substances 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 5
- 239000011521 glass Substances 0.000 title claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 230000001427 coherent effect Effects 0.000 claims description 2
- 238000010410 dusting Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000006911 nucleation Effects 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000001654 germ layer Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/287—Chalcogenides
- C03C2217/289—Selenides, tellurides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
Verfahren zur Herstellung von dünnen, zusammenhängenden, homogenen, hexagonalen Selenschichten auf glatter, lichtdurchlässiger Unterlage, z. B. auf Glas oder Quarzcrlas Zur Herstellung von dünnen, kristallinen, hexagonalen Selenschichten, wie sie z. B. in Selengleichrichtern und Selenphotoelementen benötigt werden, sind mehrere Verfahren bekannt.Process for the production of thin, coherent, homogeneous, hexagonal selenium layers on a smooth, translucent surface, e.g. B. on Glass or quartz crystal For the production of thin, crystalline, hexagonal selenium layers, how they z. B. are needed in selenium rectifiers and selenium photo elements several procedures known.
Nach einem dieser Verfahren wird das flüssige Selen auf die Unterlage, z. B. eine aufgerauhte Metallplatte, aufgestrichen, wo es auch bei und nach der Abkühlung amorph bleibt. Das amorphe Selen wird dann unter gleichzeitiger Anwendung von erhöhtem Druck und Temperatur in eine dünne, kristalline Schicht umgewandelt. Auf diese Weise erhält man völlig homogene Schichten.According to one of these processes, the liquid selenium is applied to the base, z. B. a roughened metal plate, painted on, where it is also during and after the Cooling remains amorphous. The amorphous selenium is then used simultaneously converted into a thin, crystalline layer by increased pressure and temperature. In this way, completely homogeneous layers are obtained.
Nach einem anderen Verfahren wird Selen im Vakuum auf eine aufgerauhte, auf eineTemperatur von über ioo° C erhitzte Unterlage aufgedampft. Das Selen schlägt sich hierbei sofort in kristalliner Form nieder.According to another process, selenium is applied to a roughened, evaporated onto a surface heated to over 100 ° C. The selenium beats this immediately settles in crystalline form.
Beide Verfahren werden heute bei der Herstellung von Selengleichrichtern und Selenphotoelementen in größtem Ausmaße angewandt; sie liefern jedoch nicht in allen Fällen gleich gute Resultate, z. B. nicht in den Fällen, wenn eine dünne, hexagonale Selenschicht von einer Dicke von etwa i ,u auf einem lichtdurchlässigen Träger, z. B. auf Glas oder Quarzglas, gebildet werden soll. Da diese lichtdurchlässigen Träger in der Regel eine glatte Oberfläche aufweisen, begegnet die Bildung der kristallinen Selenschicht großen Schwierigkeiten. Die Schichten, die mittels des Preßverfahrens gebildet werden, haften auf glatten Unterlagen außerordentlich schlecht, da eine die Haftfestigkeit steigernde Selenidbildung zwischen lichtdurchlässiger Unterlage und der gebildeten Selenschicht nicht stattfindet. Arbeitet man andererseits nach dem Bedampfungsverfahren, so ist es schwierig, vollkommen homogene Schichten zu erhalten.Both processes are used today in the manufacture of selenium rectifiers and selenium photo elements applied to the greatest extent; however, they do not deliver in equally good results in all cases, e.g. B. not in cases where a thin, hexagonal selenium layer about i, u thick on a translucent layer Carrier, e.g. B. on glass or quartz glass is to be formed. Because this translucent Carriers usually have a smooth surface, countered the formation of the crystalline Selenium great difficulty. The layers that are produced by means of the pressing process are formed, adhere to smooth Documents extremely bad, there is a selenide formation that increases the adhesive strength between translucent Underlay and the selenium layer formed does not take place. On the other hand, if you work After the vapor deposition process, it is difficult to produce completely homogeneous layers to obtain.
Das erfindungsgemäße Verfahren vermeidet diese Nachteile und besteht darin, daß bei der Herstellung von homogenen, hexagönalen Selenschichten auf einer eine glatte Oberfläche aufweisenden, ultraviolettes, sichtbares und ultrarotes Licht durchlässigen Unterlage, z. B. auf Glas oder Quarzglas, vor Aufbringen des Selens, beispielsweise durch Aufdampfen oder Aufstäuben, die lichtdurchlässige Unterlage . mit einer dünnen,. keimbildenden, optisch nicht in Erscheinung tretenden Fremdschicht belegt wird. Diese Keim-Schicht fördert die Kristallisation des aufgebrachten Selens in hohem Maße. Zweckmäßig werden für diese Keimschichten Stoffe verwendet, die dem Selen chemisch ähnlich sind, d. h. solche Stoffe, die in derselben Gruppe des Periodischen Systemfis, wie Selen stehen. Bei der Verwendung solcher Stoffe, insbesondere bei der Verwendung des Nachbarelementes Tellur, wird eine besonders wirkungsvolle Keimschicht ohne irgendwelche schädlichen Nebeneinflüsse erzielt.The method according to the invention avoids these disadvantages and exists in that in the production of homogeneous, hexagonal selenium layers on a smooth-surfaced ultraviolet, visible and ultrared light permeable base, e.g. B. on glass or quartz glass, before applying the selenium, for example by vapor deposition or dusting, the translucent base . with a thin ,. germ-forming, optically invisible foreign layer is occupied. This seed layer promotes the crystallization of the applied selenium to a great extent. Appropriately, substances are used for these germ layers that the Are chemically similar to selenium, i.e. H. those substances that are in the same group of the periodic Systemfis, how selenium stand. When using such substances, especially with the use of the neighboring element tellurium becomes a particularly effective seed layer achieved without any harmful side effects.
Das erfindungsgemäße Verfahren läßt sich beispielsweise so durchführen, daß die bekeimte Unterlage auf eine Temperatur von über 9o° C gebracht wird und dann .das Selen aufgedampft wird, wobei der Niederschlag des Selens unmittelbar in kristalliner Form erfolgt. Die Selenschicht kann, jedoch auch auf :die bekeimte Unterlage bei normaler. Temperatur aufgebracht und dann bei einer über 9o° C liegenden Temperatur in die kristalline Modifikation umgewandelt werden.The method according to the invention can be carried out, for example, that the germinated base is brought to a temperature of over 9o ° C and then .das selenium is evaporated, with the precipitate of selenium immediately takes place in crystalline form. The selenium layer can, however, also affect: the germinated Underlay at normal. Temperature applied and then at a temperature above 90 ° C Temperature can be converted into the crystalline modification.
Das Verfahren ermöglicht es, auf lichtdurchlässigen, eine glatte Oberfläche aufweisenden Unterlagen homogene, hexagonale Selenschichten bis herunter zu einer Dicke von etwa i X i o-5 mm herzustellen.The process enables translucent, smooth surface having homogeneous, hexagonal selenium layers down to one Thickness of about i X i o -5 mm.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEF9219A DE926987C (en) | 1952-06-10 | 1952-06-10 | Process for the production of thin, cohesive, homogeneous, hexagonal selenium layers on a smooth, translucent base, e.g. B. on glass or quartz glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEF9219A DE926987C (en) | 1952-06-10 | 1952-06-10 | Process for the production of thin, cohesive, homogeneous, hexagonal selenium layers on a smooth, translucent base, e.g. B. on glass or quartz glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE926987C true DE926987C (en) | 1955-04-28 |
Family
ID=7086064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEF9219A Expired DE926987C (en) | 1952-06-10 | 1952-06-10 | Process for the production of thin, cohesive, homogeneous, hexagonal selenium layers on a smooth, translucent base, e.g. B. on glass or quartz glass |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE926987C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2908592A (en) * | 1939-01-22 | 1959-10-13 | Int Standard Electric Corp | Method of producing a selenium rectifier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE398108C (en) * | 1919-11-12 | 1924-07-04 | Max Volmer Dr | Process for the production of copper coatings, especially of copper mirrors on non-metallic surfaces |
| US2408116A (en) * | 1941-07-12 | 1946-09-24 | Fed Telephone & Radio Corp | Selenium coated elements and method of making them |
-
1952
- 1952-06-10 DE DEF9219A patent/DE926987C/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE398108C (en) * | 1919-11-12 | 1924-07-04 | Max Volmer Dr | Process for the production of copper coatings, especially of copper mirrors on non-metallic surfaces |
| US2408116A (en) * | 1941-07-12 | 1946-09-24 | Fed Telephone & Radio Corp | Selenium coated elements and method of making them |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2908592A (en) * | 1939-01-22 | 1959-10-13 | Int Standard Electric Corp | Method of producing a selenium rectifier |
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