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DE69938788D1 - Hochleistungshalbleiterlichtquelle - Google Patents

Hochleistungshalbleiterlichtquelle

Info

Publication number
DE69938788D1
DE69938788D1 DE69938788T DE69938788T DE69938788D1 DE 69938788 D1 DE69938788 D1 DE 69938788D1 DE 69938788 T DE69938788 T DE 69938788T DE 69938788 T DE69938788 T DE 69938788T DE 69938788 D1 DE69938788 D1 DE 69938788D1
Authority
DE
Germany
Prior art keywords
light source
semiconductor light
high power
power semiconductor
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69938788T
Other languages
English (en)
Inventor
Gerry A Alphonse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trumpf Photonics Inc
Original Assignee
Trumpf Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics Inc filed Critical Trumpf Photonics Inc
Application granted granted Critical
Publication of DE69938788D1 publication Critical patent/DE69938788D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69938788T 1998-06-16 1999-06-16 Hochleistungshalbleiterlichtquelle Expired - Lifetime DE69938788D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8945498P 1998-06-16 1998-06-16
PCT/US1999/013568 WO1999066613A1 (en) 1998-06-16 1999-06-16 High power semiconductor light source

Publications (1)

Publication Number Publication Date
DE69938788D1 true DE69938788D1 (de) 2008-07-03

Family

ID=22217742

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69938788T Expired - Lifetime DE69938788D1 (de) 1998-06-16 1999-06-16 Hochleistungshalbleiterlichtquelle

Country Status (4)

Country Link
US (1) US6339606B1 (de)
EP (1) EP1121720B1 (de)
DE (1) DE69938788D1 (de)
WO (1) WO1999066613A1 (de)

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US6430207B1 (en) * 1998-09-23 2002-08-06 Sarnoff Corporation High-power laser with transverse mode filter
US6829276B1 (en) * 1999-10-22 2004-12-07 Trumpf Photonics, Inc. Integrated high power semiconductor laser
WO2001063331A1 (en) * 2000-02-25 2001-08-30 Princeton Lightwave, Inc. Multi-pass, arcuate bent waveguide, high power superluminescent diode
GB2370884A (en) * 2000-11-09 2002-07-10 Kamelian Ltd Optical waveguide
US6804281B1 (en) * 2001-01-23 2004-10-12 James N. Walpole Large modal volume semiconductor laser system with spatial mode filter
US6607933B2 (en) * 2001-08-07 2003-08-19 Agere Systems Optoelectronics Guardian Corp. Double layer beam expander for device-to-fiber coupling
US7085499B2 (en) 2001-11-15 2006-08-01 Hrl Laboratories, Llc Agile RF-lightwave waveform synthesis and an optical multi-tone amplitude modulator
WO2003043178A2 (en) 2001-11-15 2003-05-22 Hrl Laboratories, Llc Frequency agile spread waveform generator and method and pre-processor apparatus and method
US6872985B2 (en) * 2001-11-15 2005-03-29 Hrl Laboratories, Llc Waveguide-bonded optoelectronic devices
US10022078B2 (en) 2004-07-13 2018-07-17 Dexcom, Inc. Analyte sensor
JP3766637B2 (ja) * 2002-03-04 2006-04-12 富士通株式会社 光結合素子及び光デバイス
US20040061122A1 (en) * 2002-09-27 2004-04-01 Gerard Alphonse Light emitting device with low back facet reflections
US6879610B2 (en) * 2002-09-27 2005-04-12 Sarnoff Corporation Narrow spectral width light emitting devices
US20040202429A1 (en) * 2003-04-10 2004-10-14 Lambda Crossing Ltd. Planar optical component for coupling light to a high index waveguide, and method of its manufacture
US7050222B2 (en) * 2003-05-23 2006-05-23 Covega, Inc. Methods and devices for high power, depolarized superluminescent diodes
US7499653B2 (en) 2003-07-14 2009-03-03 Hrl Laboratories, Llc Multiple wavelength photonic oscillator
US7822082B2 (en) 2004-01-27 2010-10-26 Hrl Laboratories, Llc Wavelength reconfigurable laser transmitter tuned via the resonance passbands of a tunable microresonator
US7736382B2 (en) 2005-09-09 2010-06-15 Lockheed Martin Corporation Apparatus for optical stimulation of nerves and other animal tissue
US8475506B1 (en) 2007-08-13 2013-07-02 Lockheed Martin Corporation VCSEL array stimulator apparatus and method for light stimulation of bodily tissues
US8744570B2 (en) * 2009-01-23 2014-06-03 Lockheed Martin Corporation Optical stimulation of the brainstem and/or midbrain, including auditory areas
US8709078B1 (en) 2011-08-03 2014-04-29 Lockheed Martin Corporation Ocular implant with substantially constant retinal spacing for transmission of nerve-stimulation light
US8012189B1 (en) 2007-01-11 2011-09-06 Lockheed Martin Corporation Method and vestibular implant using optical stimulation of nerves
US8929973B1 (en) 2005-10-24 2015-01-06 Lockheed Martin Corporation Apparatus and method for characterizing optical sources used with human and animal tissues
US8792978B2 (en) 2010-05-28 2014-07-29 Lockheed Martin Corporation Laser-based nerve stimulators for, E.G., hearing restoration in cochlear prostheses and method
US8945197B1 (en) 2005-10-24 2015-02-03 Lockheed Martin Corporation Sight-restoring visual prosthetic and method using infrared nerve-stimulation light
US8956396B1 (en) 2005-10-24 2015-02-17 Lockheed Martin Corporation Eye-tracking visual prosthetic and method
US7988688B2 (en) * 2006-09-21 2011-08-02 Lockheed Martin Corporation Miniature apparatus and method for optical stimulation of nerves and other animal tissue
US8996131B1 (en) 2006-09-28 2015-03-31 Lockheed Martin Corporation Apparatus and method for managing chronic pain with infrared light sources and heat
US8498699B2 (en) 2008-10-03 2013-07-30 Lockheed Martin Company Method and nerve stimulator using simultaneous electrical and optical signals
US7883536B1 (en) 2007-01-19 2011-02-08 Lockheed Martin Corporation Hybrid optical-electrical probes
JP5616629B2 (ja) * 2007-03-23 2014-10-29 国立大学法人九州大学 高輝度発光ダイオード
US9011508B2 (en) 2007-11-30 2015-04-21 Lockheed Martin Corporation Broad wavelength profile to homogenize the absorption profile in optical stimulation of nerves
US20100016732A1 (en) * 2008-07-17 2010-01-21 Lockheed Martin Corporation Apparatus and method for neural-signal capture to drive neuroprostheses or control bodily function
WO2010040142A1 (en) 2008-10-03 2010-04-08 Lockheed Martin Corporation Nerve stimulator and method using simultaneous electrical and optical signals
JP5311046B2 (ja) * 2009-09-11 2013-10-09 セイコーエプソン株式会社 プロジェクター
US9977188B2 (en) 2011-08-30 2018-05-22 Skorpios Technologies, Inc. Integrated photonics mode expander
US9158057B2 (en) * 2012-05-18 2015-10-13 Gerard A Alphonse Semiconductor light source free from facet reflections
US9658401B2 (en) * 2014-05-27 2017-05-23 Skorpios Technologies, Inc. Waveguide mode expander having an amorphous-silicon shoulder
EP3338331B1 (de) 2015-08-21 2023-10-18 Universiteit Gent On-chip-breitbandlichtquelle
US10355449B2 (en) 2016-08-15 2019-07-16 University Of Central Florida Research Foundation, Inc. Quantum cascade laser with angled active region and related methods
US10649148B2 (en) 2017-10-25 2020-05-12 Skorpios Technologies, Inc. Multistage spot size converter in silicon photonics
US11360263B2 (en) 2019-01-31 2022-06-14 Skorpios Technologies. Inc. Self-aligned spot size converter

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US4856014A (en) 1986-12-31 1989-08-08 Trw Inc. Angled stripe superluminescent diode
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US4793679A (en) 1987-04-20 1988-12-27 General Electric Company Optical coupling system
US4764934A (en) 1987-07-27 1988-08-16 Ortel Corporation Superluminescent diode and single mode laser
US4875216A (en) * 1987-11-30 1989-10-17 Xerox Corporation Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
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US5008889A (en) 1989-11-06 1991-04-16 Wilson Keith E High-accuracy wavelength stabilization of angled-stripe super luminescent laser diode sources
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JPH04296067A (ja) 1991-03-26 1992-10-20 Mitsubishi Precision Co Ltd スーパー・ルミネッセント・ダイオード
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Also Published As

Publication number Publication date
WO1999066613A1 (en) 1999-12-23
EP1121720A4 (de) 2005-09-21
WO1999066613A9 (en) 2000-06-29
EP1121720B1 (de) 2008-05-21
EP1121720A1 (de) 2001-08-08
US6339606B1 (en) 2002-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition