DE69934684D1 - Vorrichtung zur gasbehandlung - Google Patents

Vorrichtung zur gasbehandlung

Info

Publication number: DE69934684D1
Authority: DE; Germany
Prior art keywords: gas treatment; treatment; gas
Prior art date: 1998-04-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69934684T

Other languages

English (en)

Other versions

DE69934684T2 (de

Inventor

Hideaki Amano

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Electron Ltd

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-04-09

Filing date

1999-04-09

Publication date

2007-02-15

1999-04-09 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2007-02-15 Publication of DE69934684D1 publication Critical patent/DE69934684D1/de

2007-10-18 Application granted granted Critical

2007-10-18 Publication of DE69934684T2 publication Critical patent/DE69934684T2/de

2019-04-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
General Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Plasma & Fusion (AREA)
Drying Of Semiconductors (AREA)
Plasma Technology (AREA)
Chemical Vapour Deposition (AREA)
ing And Chemical Polishing (AREA)

DE69934684T 1998-04-09 1999-04-09 Vorrichtung zur gasbehandlung Expired - Fee Related DE69934684T2 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP11420498A JP2001102309A (ja)	1998-04-09	1998-04-09	ガス処理装置
JP11420498		1998-04-09
PCT/JP1999/001902 WO1999053533A1 (fr)	1998-04-09	1999-04-09	Appareil de traitement au gaz

Publications (2)

Publication Number	Publication Date
DE69934684D1 true DE69934684D1 (de)	2007-02-15
DE69934684T2 DE69934684T2 (de)	2007-10-18

Family

ID=14631825

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69934684T Expired - Fee Related DE69934684T2 (de)	1998-04-09	1999-04-09	Vorrichtung zur gasbehandlung

Country Status (7)

Country	Link
EP (1)	EP1079423B1 (de)
JP (1)	JP2001102309A (de)
KR (1)	KR20010042483A (de)
DE (1)	DE69934684T2 (de)
IL (1)	IL138903A0 (de)
TW (1)	TW412786B (de)
WO (1)	WO1999053533A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN100447297C (zh) *	2003-04-16	2008-12-31	东洋制罐株式会社	微波等离子体处理方法
US8083853B2 (en)	2004-05-12	2011-12-27	Applied Materials, Inc.	Plasma uniformity control by gas diffuser hole design
US8074599B2 (en)	2004-05-12	2011-12-13	Applied Materials, Inc.	Plasma uniformity control by gas diffuser curvature
US8328939B2 (en)	2004-05-12	2012-12-11	Applied Materials, Inc.	Diffuser plate with slit valve compensation
US7429410B2 (en)	2004-09-20	2008-09-30	Applied Materials, Inc.	Diffuser gravity support
JP5055114B2 (ja) *	2005-03-30	2012-10-24	パナソニック株式会社	プラズマドーピング方法
KR101253332B1 (ko) *	2006-03-03	2013-04-10	주성엔지니어링(주)	균일한 가스분사를 위한 가스분배판
WO2016190036A1 (ja) *	2015-05-22	2016-12-01	株式会社日立ハイテクノロジーズ	プラズマ処理装置およびそれを用いたプラズマ処理方法
JP2020147795A (ja) *	2019-03-13	2020-09-17	東京エレクトロン株式会社	プラズマ処理装置
US20210047730A1 (en) *	2019-08-13	2021-02-18	Applied Materials, Inc.	Chamber configurations for controlled deposition
JP7281433B2 (ja) *	2020-06-24	2023-05-25	株式会社日立ハイテク	プラズマ処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57121236A (en) *	1981-01-20	1982-07-28	Matsushita Electronics Corp	Plasma processing and device thereof
JPH02198138A (ja) *	1989-01-27	1990-08-06	Nec Corp	平行平板型ドライエッチング装置の電極板
US4990229A (en) *	1989-06-13	1991-02-05	Plasma & Materials Technologies, Inc.	High density plasma deposition and etching apparatus
EP0413239B1 (de) *	1989-08-14	1996-01-10	Applied Materials, Inc.	Gasverteilungssystem und Verfahren zur Benutzung dieses Systems
JPH0390577A (ja) *	1989-09-04	1991-04-16	Hitachi Ltd	マイクロ波プラズマ処理装置
JP2630089B2 (ja) *	1990-03-19	1997-07-16	株式会社日立製作所	マイクロ波プラズマ処理装置
US5234526A (en) *	1991-05-24	1993-08-10	Lam Research Corporation	Window for microwave plasma processing device
JPH0570956A (ja) *	1991-09-13	1993-03-23	Kobe Steel Ltd	有磁場マイクロ波吸収プラズマ処理装置
JPH06204181A (ja) *	1992-12-29	1994-07-22	Ibiden Co Ltd	プラズマエッチング用電極板
US5552017A (en) *	1995-11-27	1996-09-03	Taiwan Semiconductor Manufacturing Company	Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow

1998
- 1998-04-09 JP JP11420498A patent/JP2001102309A/ja active Pending
1999
- 1999-04-08 TW TW088105600A patent/TW412786B/zh not_active IP Right Cessation
- 1999-04-09 IL IL13890399A patent/IL138903A0/xx unknown
- 1999-04-09 WO PCT/JP1999/001902 patent/WO1999053533A1/ja not_active Ceased
- 1999-04-09 DE DE69934684T patent/DE69934684T2/de not_active Expired - Fee Related
- 1999-04-09 EP EP99913610A patent/EP1079423B1/de not_active Expired - Lifetime
- 1999-04-09 KR KR1020007011103A patent/KR20010042483A/ko not_active Ceased

Also Published As

Publication number	Publication date
TW412786B (en)	2000-11-21
WO1999053533A1 (fr)	1999-10-21
JP2001102309A (ja)	2001-04-13
KR20010042483A (ko)	2001-05-25
EP1079423A1 (de)	2001-02-28
IL138903A0 (en)	2001-11-25
EP1079423B1 (de)	2007-01-03
DE69934684T2 (de)	2007-10-18
EP1079423A4 (de)	2005-06-08

Publication	Publication Date	Title
DE69835300D1 (de)	2006-08-31	Vorrichtung zur inhalation
DE69841352D1 (de)	2010-01-21	Vorrichtung zur Abwasserbehandlung
DE69835000D1 (de)	2006-08-03	Vorrichtung zur Gasbehandlung
DE69720277T2 (de)	2004-01-29	Vorrichtung zur luftbehandlung
DE69929267D1 (de)	2006-03-30	Vorrichtung zur entfernten Authentifikation
DE69934219D1 (de)	2007-01-11	Vorrichtung zur blutanalyse
DE69925493D1 (de)	2005-06-30	Vorrichtung zur vorbeugung von vorhofstachyarrhythmien
DE69940014D1 (de)	2009-01-15	Vorrichtung zur verhinderung von autodiebstahl
DE60035865D1 (de)	2007-09-20	Vorrichtung zur zitzenbehandlung
DE69734082D1 (de)	2005-10-06	Vorrichtung zur Synchronisierung
DE69935789D1 (de)	2007-05-24	Verfahren und vorrichtung zur abwärtsneigung des antennendiagramms
DE69902077D1 (de)	2002-08-14	Vorrichtung zur Reinigung von Wasserstoff
DE60001342D1 (de)	2003-03-13	Vorrichtung zur Photokoagulation
DE69935357D1 (de)	2007-04-12	Vorrichtung zur Faltungsverschachtelung
DE69810534D1 (de)	2003-02-13	Vorrichtung zur Abgasreinigung
DE60015900D1 (de)	2004-12-23	Vorrichtung zur Gasrückgewinnung
DE59901300D1 (de)	2002-05-29	Vorrichtung zur kühlung von gasen
DE69627534D1 (de)	2003-05-22	Vorrichtung zur verbesserung des athmens
DE69833430D1 (de)	2006-04-20	Vorrichtung zur abwasserbehandlung
DE69810604D1 (de)	2003-02-13	Vorrichtung und methode zur gasgeneration
DE69720887D1 (de)	2003-05-22	Vorrichtung zur Stabilisierung
DE69904802D1 (de)	2003-02-13	Vorrichtung zur muenzenrueckgabe fuer muenzautomaten
DE59509949D1 (de)	2002-01-24	Vorrichtung zur strahlteilung
DE69913334T2 (de)	2004-10-21	Vorrichtung zur orthodontischen behandlung
DE69826667D1 (de)	2004-11-04	Vorrichtung zur atem-erkennung

Legal Events

Date	Code	Title	Description
2008-01-24	8364	No opposition during term of opposition
2010-02-18	8339	Ceased/non-payment of the annual fee