DE69723404D1 - Elektrode - Google Patents
ElektrodeInfo
- Publication number
- DE69723404D1 DE69723404D1 DE69723404T DE69723404T DE69723404D1 DE 69723404 D1 DE69723404 D1 DE 69723404D1 DE 69723404 T DE69723404 T DE 69723404T DE 69723404 T DE69723404 T DE 69723404T DE 69723404 D1 DE69723404 D1 DE 69723404D1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
Landscapes
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3040596P | 1996-10-29 | 1996-10-29 | |
| US30405P | 1996-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69723404D1 true DE69723404D1 (de) | 2003-08-14 |
| DE69723404T2 DE69723404T2 (de) | 2004-04-15 |
Family
ID=21854049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69723404T Expired - Lifetime DE69723404T2 (de) | 1996-10-29 | 1997-10-28 | Elektrode |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5959396A (de) |
| EP (1) | EP0845799B1 (de) |
| JP (1) | JPH10144250A (de) |
| KR (1) | KR19980033220A (de) |
| DE (1) | DE69723404T2 (de) |
| TW (1) | TW442852B (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6291827B1 (en) * | 1999-03-26 | 2001-09-18 | Mosel Vitelic Inc. | Insulating apparatus for a conductive line |
| GB2367685B (en) * | 2000-07-26 | 2004-06-16 | Masslab Ltd | Ion source for a mass spectrometer |
| KR100712494B1 (ko) * | 2001-08-31 | 2007-05-02 | 삼성전자주식회사 | 이온주입장치의 레졸빙 어퍼쳐 |
| KR100551338B1 (ko) * | 2003-07-25 | 2006-02-09 | 동부아남반도체 주식회사 | 이온빔 발생장치의 일렉트로드 헤드 |
| US7145157B2 (en) * | 2003-09-11 | 2006-12-05 | Applied Materials, Inc. | Kinematic ion implanter electrode mounting |
| KR100510559B1 (ko) * | 2003-12-30 | 2005-08-26 | 삼성전자주식회사 | 이온 주입 장비의 매니퓰레이터 어셈블리 |
| KR100553716B1 (ko) * | 2004-08-02 | 2006-02-24 | 삼성전자주식회사 | 이온 주입 설비의 이온 소스부 |
| US20090101834A1 (en) * | 2007-10-23 | 2009-04-23 | Applied Materials, Inc. | Ion beam extraction assembly in an ion implanter |
| US20130045339A1 (en) * | 2011-08-15 | 2013-02-21 | Varian Semiconductor Equipment Associates, Inc. | Techniques for diamond nucleation control for thin film processing |
| US10714296B2 (en) * | 2018-12-12 | 2020-07-14 | Axcelis Technologies, Inc. | Ion source with tailored extraction shape |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
| GB8623453D0 (en) * | 1986-09-30 | 1986-11-05 | Tecvac Ltd | Ion implantation |
| DE3708716C2 (de) * | 1987-03-18 | 1993-11-04 | Hans Prof Dr Rer Nat Oechsner | Hochfrequenz-ionenquelle |
| US5218210A (en) * | 1992-02-18 | 1993-06-08 | Eaton Corporation | Broad beam flux density control |
| JP3054302B2 (ja) * | 1992-12-02 | 2000-06-19 | アプライド マテリアルズ インコーポレイテッド | イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム |
-
1997
- 1997-10-16 US US08/951,717 patent/US5959396A/en not_active Expired - Lifetime
- 1997-10-28 KR KR1019970055501A patent/KR19980033220A/ko not_active Withdrawn
- 1997-10-28 EP EP97308618A patent/EP0845799B1/de not_active Expired - Lifetime
- 1997-10-28 DE DE69723404T patent/DE69723404T2/de not_active Expired - Lifetime
- 1997-10-29 JP JP9297070A patent/JPH10144250A/ja active Pending
- 1997-11-21 TW TW086116240A patent/TW442852B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| DE69723404T2 (de) | 2004-04-15 |
| EP0845799A3 (de) | 2000-09-20 |
| EP0845799A2 (de) | 1998-06-03 |
| US5959396A (en) | 1999-09-28 |
| KR19980033220A (ko) | 1998-07-25 |
| TW442852B (en) | 2001-06-23 |
| JPH10144250A (ja) | 1998-05-29 |
| EP0845799B1 (de) | 2003-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |