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DE60335180D1 - Hochspannungschnittstelle und Steuerschaltung dafür - Google Patents

Hochspannungschnittstelle und Steuerschaltung dafür

Info

Publication number
DE60335180D1
DE60335180D1 DE60335180T DE60335180T DE60335180D1 DE 60335180 D1 DE60335180 D1 DE 60335180D1 DE 60335180 T DE60335180 T DE 60335180T DE 60335180 T DE60335180 T DE 60335180T DE 60335180 D1 DE60335180 D1 DE 60335180D1
Authority
DE
Germany
Prior art keywords
circuit
external components
control circuit
high voltage
voltage interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335180T
Other languages
English (en)
Inventor
Horst Knoedgen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Design North America Inc
Original Assignee
Dialog Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dialog Semiconductor Inc filed Critical Dialog Semiconductor Inc
Application granted granted Critical
Publication of DE60335180D1 publication Critical patent/DE60335180D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor

Landscapes

  • Dc-Dc Converters (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Details Of Television Scanning (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE60335180T 2003-07-04 2003-07-04 Hochspannungschnittstelle und Steuerschaltung dafür Expired - Lifetime DE60335180D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03368067A EP1494354B1 (de) 2003-07-04 2003-07-04 Hochspannungschnittstelle und Steuerschaltung dafür

Publications (1)

Publication Number Publication Date
DE60335180D1 true DE60335180D1 (de) 2011-01-13

Family

ID=32865090

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335180T Expired - Lifetime DE60335180D1 (de) 2003-07-04 2003-07-04 Hochspannungschnittstelle und Steuerschaltung dafür

Country Status (4)

Country Link
US (1) US6781423B1 (de)
EP (1) EP1494354B1 (de)
AT (1) ATE490597T1 (de)
DE (1) DE60335180D1 (de)

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US8619443B2 (en) 2010-09-29 2013-12-31 The Powerwise Group, Inc. System and method to boost voltage
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US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7843237B2 (en) * 2008-11-17 2010-11-30 Infineon Technologies Austria Ag Circuit arrangement for actuating a transistor
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US8698446B2 (en) 2009-09-08 2014-04-15 The Powerwise Group, Inc. Method to save energy for devices with rotating or reciprocating masses
EA021950B1 (ru) 2009-09-08 2015-10-30 Дзе Пауэрвайз Груп, Инк. Система и способ сбережения энергии для устройств с вращающимися или выполняющими возвратно-поступательное движение массами
US8138529B2 (en) 2009-11-02 2012-03-20 Transphorm Inc. Package configurations for low EMI circuits
US8816497B2 (en) * 2010-01-08 2014-08-26 Transphorm Inc. Electronic devices and components for high efficiency power circuits
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US8786327B2 (en) 2011-02-28 2014-07-22 Transphorm Inc. Electronic components with reactive filters
US9209176B2 (en) 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
US9234943B2 (en) * 2011-12-16 2016-01-12 Lear Corporation Method and system for battery current measurement calibration
CN103178692A (zh) * 2011-12-22 2013-06-26 西门子电气传动有限公司 功率开关器件的驱动装置
US8847631B2 (en) * 2011-12-23 2014-09-30 General Electric Company High speed low loss gate drive circuit
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
US8803246B2 (en) 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
US9059076B2 (en) * 2013-04-01 2015-06-16 Transphorm Inc. Gate drivers for circuits based on semiconductor devices
US9537425B2 (en) 2013-07-09 2017-01-03 Transphorm Inc. Multilevel inverters and their components
US9543940B2 (en) 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
US10200030B2 (en) 2015-03-13 2019-02-05 Transphorm Inc. Paralleling of switching devices for high power circuits
US10498326B2 (en) * 2016-03-01 2019-12-03 Texas Instruments Incorporated Output driver with power down protection
US10158288B2 (en) * 2016-11-29 2018-12-18 Dialog Semiconductor (Uk) Limited Apparatus and method of a slope regulator and regulation slope of switching power FETs
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
RU2680343C1 (ru) * 2017-11-02 2019-02-19 Олег Георгиевич Егоров Способ формирования наносекундных импульсов трансформаторными индуктивными накопителями энергии на нагрузке
US11075622B1 (en) * 2020-09-10 2021-07-27 Allegro Microsystems, Llc Switch turn on in a gate driver circuit
US11082038B1 (en) 2020-09-10 2021-08-03 Allegro Microsystems, Llc Gate driver isolating circuit
JP7470084B2 (ja) * 2021-09-10 2024-04-17 株式会社東芝 電子回路、電子システム及び駆動方法
CN114844333A (zh) * 2022-04-27 2022-08-02 昂宝电子(上海)有限公司 半桥拓扑电路及其控制方法
CN116232011B (zh) * 2023-03-07 2024-01-26 禹创半导体(深圳)有限公司 一种具有能量回收机制的电压转换装置以及一种电源芯片

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Also Published As

Publication number Publication date
US6781423B1 (en) 2004-08-24
EP1494354A1 (de) 2005-01-05
EP1494354B1 (de) 2010-12-01
ATE490597T1 (de) 2010-12-15

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