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DE60309164D1 - Inhaltsadressierbare Speicherzelle (CAM) mit schwebendem Gatter und deren Herstellungsverfahren - Google Patents

Inhaltsadressierbare Speicherzelle (CAM) mit schwebendem Gatter und deren Herstellungsverfahren

Info

Publication number
DE60309164D1
DE60309164D1 DE60309164T DE60309164T DE60309164D1 DE 60309164 D1 DE60309164 D1 DE 60309164D1 DE 60309164 T DE60309164 T DE 60309164T DE 60309164 T DE60309164 T DE 60309164T DE 60309164 D1 DE60309164 D1 DE 60309164D1
Authority
DE
Germany
Prior art keywords
cam
manufacturing
memory cell
floating gate
addressable memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60309164T
Other languages
English (en)
Inventor
Mauro Bonanomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60309164D1 publication Critical patent/DE60309164D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
DE60309164T 2003-08-29 2003-08-29 Inhaltsadressierbare Speicherzelle (CAM) mit schwebendem Gatter und deren Herstellungsverfahren Expired - Lifetime DE60309164D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425565A EP1511082B1 (de) 2003-08-29 2003-08-29 Inhaltsadressierbare Speicherzelle (CAM) mit schwebendem Gatter und deren Herstellungsverfahren

Publications (1)

Publication Number Publication Date
DE60309164D1 true DE60309164D1 (de) 2006-11-30

Family

ID=34089798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60309164T Expired - Lifetime DE60309164D1 (de) 2003-08-29 2003-08-29 Inhaltsadressierbare Speicherzelle (CAM) mit schwebendem Gatter und deren Herstellungsverfahren

Country Status (3)

Country Link
US (1) US7285816B2 (de)
EP (1) EP1511082B1 (de)
DE (1) DE60309164D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7986535B2 (en) * 2007-07-17 2011-07-26 Raytheon Company Methods and apparatus for a cascade converter using series resonant cells with zero voltage switching
US7839023B2 (en) 2007-07-18 2010-11-23 Raytheon Company Methods and apparatus for three-phase inverter with reduced energy storage
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018953A (ja) * 1983-07-12 1985-01-31 Seiko Epson Corp 半導体集積回路
EP0453863A2 (de) * 1990-04-27 1991-10-30 National Semiconductor Corporation Verfahren und Gerät zur Ausführung einer Mediumzugriffssteuerung/Wirtsystemschnittstelle
JP2590744B2 (ja) * 1994-07-28 1997-03-12 日本電気株式会社 不揮発性半導体記憶装置
KR100317492B1 (ko) * 1999-12-28 2001-12-24 박종섭 플래쉬 메모리 소자의 코드저장 셀

Also Published As

Publication number Publication date
EP1511082B1 (de) 2006-10-18
EP1511082A1 (de) 2005-03-02
US20050230739A1 (en) 2005-10-20
US7285816B2 (en) 2007-10-23

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Legal Events

Date Code Title Description
8332 No legal effect for de