DE60301119D1 - Non-volatile SRAM memory cell - Google Patents

Non-volatile SRAM memory cell

Info

Publication number: DE60301119D1
Authority: DE; Germany
Prior art keywords: memory cell; sram memory; volatile sram; volatile; cell
Prior art date: 2002-12-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60301119T

Other languages

German (de)

Other versions

DE60301119T2 (en

Inventor

Richard Fournel

Emmanuel Vincent

Sylvie Bruyere

Philippe Candelier

Francois Jacquet

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics SA

Original Assignee

STMicroelectronics SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-12-23

Filing date

2003-12-08

Publication date

2005-09-01

2003-12-08 Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA

2005-09-01 Application granted granted Critical

2005-09-01 Publication of DE60301119D1 publication Critical patent/DE60301119D1/en

2006-06-01 Publication of DE60301119T2 publication Critical patent/DE60301119T2/en

2023-12-09 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM

DE60301119T 2002-12-23 2003-12-08 Non-volatile SRAM memory cell Expired - Lifetime DE60301119T2 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FR0216558A FR2849260B1 (en)	2002-12-23	2002-12-23	NONVOLATILE SRAM MEMORY CELL.
FR0216558		2002-12-23

Publications (2)

Publication Number	Publication Date
DE60301119D1 true DE60301119D1 (en)	2005-09-01
DE60301119T2 DE60301119T2 (en)	2006-06-01

Family

ID=32406433

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60301119T Expired - Lifetime DE60301119T2 (en)	2002-12-23	2003-12-08	Non-volatile SRAM memory cell

Country Status (4)

Country	Link
US (1)	US7184299B2 (en)
EP (1)	EP1434237B1 (en)
DE (1)	DE60301119T2 (en)
FR (1)	FR2849260B1 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7251150B2 (en) *	2001-10-23	2007-07-31	Aeroflex Colorado Springs Inc.	Radiation-hardened programmable device
FR2849260B1 (en)	2002-12-23	2005-03-11	St Microelectronics Sa	NONVOLATILE SRAM MEMORY CELL.
FR2877143A1 (en)	2004-10-25	2006-04-28	St Microelectronics Sa	VOLATILE MEMORY CELL PRE-RECORDED
US20060139995A1 (en) *	2004-12-28	2006-06-29	Ali Keshavarzi	One time programmable memory
US7835196B2 (en)	2005-10-03	2010-11-16	Nscore Inc.	Nonvolatile memory device storing data based on change in transistor characteristics
FR2905192A1 (en) *	2006-08-24	2008-02-29	St Microelectronics Sa	LOGIC CELL PROTECTED AGAINST ALEAS
US7483290B2 (en) *	2007-02-02	2009-01-27	Nscore Inc.	Nonvolatile memory utilizing hot-carrier effect with data reversal function
US7518917B2 (en) *	2007-07-11	2009-04-14	Nscore Inc.	Nonvolatile memory utilizing MIS memory transistors capable of multiple store operations
US7542341B2 (en) *	2007-08-20	2009-06-02	Nscore, Inc.	MIS-transistor-based nonvolatile memory device with verify function
US7460400B1 (en)	2007-08-22	2008-12-02	Nscore Inc.	Nonvolatile memory utilizing MIS memory transistors with bit mask function
US7463519B1 (en)	2007-08-22	2008-12-09	Nscore Inc.	MIS-transistor-based nonvolatile memory device for authentication
US7511999B1 (en)	2007-11-06	2009-03-31	Nscore Inc.	MIS-transistor-based nonvolatile memory with reliable data retention capability
US7630247B2 (en) *	2008-02-25	2009-12-08	Nscore Inc.	MIS-transistor-based nonvolatile memory
US7639546B2 (en)	2008-02-26	2009-12-29	Nscore Inc.	Nonvolatile memory utilizing MIS memory transistors with function to correct data reversal
US7733714B2 (en)	2008-06-16	2010-06-08	Nscore Inc.	MIS-transistor-based nonvolatile memory for multilevel data storage
US7821806B2 (en) *	2008-06-18	2010-10-26	Nscore Inc.	Nonvolatile semiconductor memory circuit utilizing a MIS transistor as a memory cell
US7791927B1 (en) *	2009-02-18	2010-09-07	Nscore Inc.	Mis-transistor-based nonvolatile memory circuit with stable and enhanced performance
US8213247B2 (en) *	2009-11-16	2012-07-03	Nscore Inc.	Memory device with test mechanism
US8259505B2 (en)	2010-05-28	2012-09-04	Nscore Inc.	Nonvolatile memory device with reduced current consumption
US8451657B2 (en)	2011-02-14	2013-05-28	Nscore, Inc.	Nonvolatile semiconductor memory device using MIS transistor
US9159404B2 (en)	2014-02-26	2015-10-13	Nscore, Inc.	Nonvolatile memory device
US9484072B1 (en)	2015-10-06	2016-11-01	Nscore, Inc.	MIS transistors configured to be placed in programmed state and erased state
US9966141B2 (en)	2016-02-19	2018-05-08	Nscore, Inc.	Nonvolatile memory cell employing hot carrier effect for data storage
JP2019160371A (en)	2018-03-14	2019-09-19	株式会社東芝	Memory circuit and electronic device
US11056178B1 (en) *	2020-07-20	2021-07-06	Micron Technology, Inc.	Read operations based on a dynamic reference

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4207615A (en) *	1978-11-17	1980-06-10	Intel Corporation	Non-volatile ram cell
JP3450896B2 (en) *	1994-04-01	2003-09-29	三菱電機株式会社	Non-volatile memory device
US5892712A (en) *	1996-05-01	1999-04-06	Nvx Corporation	Semiconductor non-volatile latch device including embedded non-volatile elements
US6122191A (en) *	1996-05-01	2000-09-19	Cypress Semiconductor Corporation	Semiconductor non-volatile device including embedded non-volatile elements
TW587251B (en) *	1999-10-04	2004-05-11	Koninkl Philips Electronics Nv	A non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanent programmed information in the cell a non-volatile one
US6965524B2 (en) *	2002-03-19	2005-11-15	O2Ic, Inc.	Non-volatile static random access memory
FR2849260B1 (en)	2002-12-23	2005-03-11	St Microelectronics Sa	NONVOLATILE SRAM MEMORY CELL.

2002
- 2002-12-23 FR FR0216558A patent/FR2849260B1/en not_active Expired - Fee Related
2003
- 2003-12-02 US US10/726,263 patent/US7184299B2/en not_active Expired - Lifetime
- 2003-12-08 DE DE60301119T patent/DE60301119T2/en not_active Expired - Lifetime
- 2003-12-08 EP EP03293055A patent/EP1434237B1/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US20040252554A1 (en)	2004-12-16
FR2849260B1 (en)	2005-03-11
EP1434237B1 (en)	2005-07-27
FR2849260A1 (en)	2004-06-25
DE60301119T2 (en)	2006-06-01
EP1434237A1 (en)	2004-06-30
US7184299B2 (en)	2007-02-27

Publication	Publication Date	Title
DE60301119D1 (en)	2005-09-01	Non-volatile SRAM memory cell
DE60300777D1 (en)	2005-07-07	NON-VOLATILE REDUNDANCY ADDRESS MEMORY
DE60314068D1 (en)	2007-07-12	Non-volatile semiconductor memory
DE602004028190D1 (en)	2010-09-02	memory array
DE60217463D1 (en)	2007-02-22	Non-volatile ferroelectric, two-transistor memory cell
DE602004007173D1 (en)	2007-08-09	Non-volatile semiconductor memory
DE60216708D1 (en)	2007-01-25	Memory cell structure
DE60119199D1 (en)	2006-06-08	memory cell
SG121879A1 (en)	2006-05-26	Memory cell structure
DE60326116D1 (en)	2009-03-26	Non-volatile memory cell and nonvolatile semiconductor memory device
DE60332081D1 (en)	2010-05-27	Non-volatile semiconductor memory device
SG108925A1 (en)	2005-02-28	Non-volatile memory cells
DE60222947D1 (en)	2007-11-22	Semiconductor memory
DE602004020504D1 (en)	2009-05-20	MEMORY CONTROL
DE60037786D1 (en)	2008-03-06	Non-volatile semiconductor memory with two bit cells
GB0418846D0 (en)	2004-09-22	Memory cell
DE60304209D1 (en)	2006-05-11	MAGNETIC TUNNEL BARRIER MEMORY CELL ARCHITECTURE
DE60317381D1 (en)	2007-12-20	Semiconductor memory
AU2003285948A8 (en)	2004-06-30	Source-biased memory cell array
DE60317930D1 (en)	2008-01-17	IMPROVED SYSTEM FOR PROGRAMMING NON-VOLATILE MEMORY CELL
DE60222891D1 (en)	2007-11-22	Non-volatile memory arrangement and self-repair method
DE602004016280D1 (en)	2008-10-16	Non-volatile memory cell and operating method therefor
DE60334276D1 (en)	2010-11-04	Programmable memory transistor
DE60336787D1 (en)	2011-06-01	Semiconductor memory
NO20032188L (en)	2003-07-17	A self-adjusting non-volatile memory cell

Legal Events

Date	Code	Title	Description
2006-08-17	8364	No opposition during term of opposition