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DE60139936D1 - Graben-mosfet mit doppelt diffundiertem body-profil - Google Patents

Graben-mosfet mit doppelt diffundiertem body-profil

Info

Publication number
DE60139936D1
DE60139936D1 DE60139936T DE60139936T DE60139936D1 DE 60139936 D1 DE60139936 D1 DE 60139936D1 DE 60139936 T DE60139936 T DE 60139936T DE 60139936 T DE60139936 T DE 60139936T DE 60139936 D1 DE60139936 D1 DE 60139936D1
Authority
DE
Germany
Prior art keywords
mosfet
triangular
body profile
double diffused
diffused body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139936T
Other languages
English (en)
Inventor
Fwu-Iuan Hshieh
Koon Chong So
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Application granted granted Critical
Publication of DE60139936D1 publication Critical patent/DE60139936D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60139936T 2000-06-16 2001-06-14 Graben-mosfet mit doppelt diffundiertem body-profil Expired - Lifetime DE60139936D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/595,486 US6472678B1 (en) 2000-06-16 2000-06-16 Trench MOSFET with double-diffused body profile
PCT/US2001/019363 WO2001099177A2 (en) 2000-06-16 2001-06-14 Trench mosfet with double-diffused body profile

Publications (1)

Publication Number Publication Date
DE60139936D1 true DE60139936D1 (de) 2009-10-29

Family

ID=24383432

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139936T Expired - Lifetime DE60139936D1 (de) 2000-06-16 2001-06-14 Graben-mosfet mit doppelt diffundiertem body-profil

Country Status (9)

Country Link
US (2) US6472678B1 (de)
EP (1) EP1292990B1 (de)
JP (1) JP2003536274A (de)
KR (1) KR100759937B1 (de)
CN (1) CN1220273C (de)
AU (1) AU2001266977A1 (de)
DE (1) DE60139936D1 (de)
TW (1) TW493239B (de)
WO (1) WO2001099177A2 (de)

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US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US6822288B2 (en) * 2001-11-20 2004-11-23 General Semiconductor, Inc. Trench MOSFET device with polycrystalline silicon source contact structure
US6576516B1 (en) * 2001-12-31 2003-06-10 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US8629019B2 (en) 2002-09-24 2014-01-14 Vishay-Siliconix Method of forming self aligned contacts for a power MOSFET
US8080459B2 (en) 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
US6921699B2 (en) * 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
JP4829473B2 (ja) 2004-01-21 2011-12-07 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置およびその製造方法
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
KR100582374B1 (ko) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 고전압 트랜지스터 및 그 제조 방법
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
CN101185169B (zh) 2005-04-06 2010-08-18 飞兆半导体公司 沟栅场效应晶体管及其形成方法
US20070004116A1 (en) * 2005-06-06 2007-01-04 M-Mos Semiconductor Sdn. Bhd. Trenched MOSFET termination with tungsten plug structures
WO2006135746A2 (en) 2005-06-10 2006-12-21 Fairchild Semiconductor Corporation Charge balance field effect transistor
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP5198752B2 (ja) * 2006-09-28 2013-05-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
JP2008218711A (ja) * 2007-03-05 2008-09-18 Renesas Technology Corp 半導体装置およびその製造方法、ならびに電源装置
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
JP2010541212A (ja) 2007-09-21 2010-12-24 フェアチャイルド・セミコンダクター・コーポレーション 電力デバイスのための超接合構造及び製造方法
WO2009060406A1 (en) * 2007-11-08 2009-05-14 Nxp B.V. A trench-gate semiconductor device and method of manufacturing the same
EP2209142B1 (de) * 2007-11-09 2020-05-27 Sanken Electric Co., Ltd. Halbleiterbauelement und herstellungsverfahren dafür
US7772668B2 (en) * 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US7911260B2 (en) * 2009-02-02 2011-03-22 Infineon Technologies Ag Current control circuits
US9425306B2 (en) 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9230810B2 (en) 2009-09-03 2016-01-05 Vishay-Siliconix System and method for substrate wafer back side and edge cross section seals
TWI405326B (zh) * 2009-10-14 2013-08-11 Anpec Electronics Corp 雙導通半導體元件及其製作方法
US9431530B2 (en) 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
JP4791572B2 (ja) * 2009-12-21 2011-10-12 ルネサスエレクトロニクス株式会社 半導体装置
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP2010283368A (ja) * 2010-07-26 2010-12-16 Renesas Electronics Corp 半導体装置の製造方法
US8487371B2 (en) 2011-03-29 2013-07-16 Fairchild Semiconductor Corporation Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
JP2013065749A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
US9287391B2 (en) * 2012-03-05 2016-03-15 Mitsubishi Electric Corporation Semiconductor device
US9318549B2 (en) * 2013-02-18 2016-04-19 Infineon Technologies Austria Ag Semiconductor device with a super junction structure having a vertical impurity distribution
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP3183753B1 (de) 2014-08-19 2025-03-19 Vishay-Siliconix Mosfet-halbleiteranordnung
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
US9673314B2 (en) * 2015-07-08 2017-06-06 Vishay-Siliconix Semiconductor device with non-uniform trench oxide layer
US20230101610A1 (en) * 2021-09-30 2023-03-30 Texas Instruments Incorporated Field-effect transistor having fractionally enhanced body structure
CN117594658B (zh) * 2023-11-16 2024-10-22 深圳芯能半导体技术有限公司 一种沟槽型场效应晶体管及其制备方法

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US5688725A (en) * 1994-12-30 1997-11-18 Siliconix Incorporated Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance
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Also Published As

Publication number Publication date
KR100759937B1 (ko) 2007-09-19
CN1436371A (zh) 2003-08-13
JP2003536274A (ja) 2003-12-02
WO2001099177A2 (en) 2001-12-27
EP1292990A2 (de) 2003-03-19
CN1220273C (zh) 2005-09-21
WO2001099177A3 (en) 2002-03-28
KR20030062236A (ko) 2003-07-23
US20020009854A1 (en) 2002-01-24
TW493239B (en) 2002-07-01
AU2001266977A1 (en) 2002-01-02
EP1292990B1 (de) 2009-09-16
US6518128B2 (en) 2003-02-11
US6472678B1 (en) 2002-10-29

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Legal Events

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