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DE60125943D1 - Verfahren zur herstellung von mikroelektromechanische systeme enthaltenden bauteilen, das ein uv-härtbares band verwendet - Google Patents

Verfahren zur herstellung von mikroelektromechanische systeme enthaltenden bauteilen, das ein uv-härtbares band verwendet

Info

Publication number
DE60125943D1
DE60125943D1 DE60125943T DE60125943T DE60125943D1 DE 60125943 D1 DE60125943 D1 DE 60125943D1 DE 60125943 T DE60125943 T DE 60125943T DE 60125943 T DE60125943 T DE 60125943T DE 60125943 D1 DE60125943 D1 DE 60125943D1
Authority
DE
Germany
Prior art keywords
hardenable
band
containing components
systems containing
microelectromechanical systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60125943T
Other languages
English (en)
Other versions
DE60125943T2 (de
Inventor
Kia Silverbrook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silverbrook Research Pty Ltd
Original Assignee
Silverbrook Research Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silverbrook Research Pty Ltd filed Critical Silverbrook Research Pty Ltd
Application granted granted Critical
Publication of DE60125943D1 publication Critical patent/DE60125943D1/de
Publication of DE60125943T2 publication Critical patent/DE60125943T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865Multistep processes for the separation of wafers into individual elements
    • B81C1/00904Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/977Thinning or removal of substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor
    • Y10T156/1052Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor
    • Y10T156/1052Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1062Prior to assembly
    • Y10T156/1064Partial cutting [e.g., grooving or incising]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/14Layer or component removable to expose adhesive
    • Y10T428/149Sectional layer removable
    • Y10T428/1495Adhesive is on removable layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Dicing (AREA)
DE60125943T 2000-05-10 2001-05-02 Verfahren zur herstellung von mikroelektromechanische systeme enthaltenden bauteilen, das ein uv-härtbares band verwendet Expired - Lifetime DE60125943T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US567951 2000-05-10
US09/567,951 US6425971B1 (en) 2000-05-10 2000-05-10 Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
PCT/AU2001/000502 WO2001085600A1 (en) 2000-05-10 2001-05-02 Method of fabricating devices incorporating microelectromechanical systems using uv curable tapes

Publications (2)

Publication Number Publication Date
DE60125943D1 true DE60125943D1 (de) 2007-02-22
DE60125943T2 DE60125943T2 (de) 2007-10-31

Family

ID=24269301

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60125943T Expired - Lifetime DE60125943T2 (de) 2000-05-10 2001-05-02 Verfahren zur herstellung von mikroelektromechanische systeme enthaltenden bauteilen, das ein uv-härtbares band verwendet

Country Status (7)

Country Link
US (2) US6425971B1 (de)
EP (1) EP1301432B1 (de)
AU (3) AU2001254522B2 (de)
DE (1) DE60125943T2 (de)
IL (1) IL152691A (de)
SG (1) SG129303A1 (de)
WO (1) WO2001085600A1 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6425971B1 (en) * 2000-05-10 2002-07-30 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
JP3631956B2 (ja) * 2000-05-12 2005-03-23 富士通株式会社 半導体チップの実装方法
US6610167B1 (en) * 2001-01-16 2003-08-26 Amkor Technology, Inc. Method for fabricating a special-purpose die using a polymerizable tape
US6572944B1 (en) 2001-01-16 2003-06-03 Amkor Technology, Inc. Structure for fabricating a special-purpose die using a polymerizable tape
JP4649745B2 (ja) 2001-02-01 2011-03-16 ソニー株式会社 発光素子の転写方法
US6982184B2 (en) * 2001-05-02 2006-01-03 Silverbrook Research Pty Ltd Method of fabricating MEMS devices on a silicon wafer
US6878608B2 (en) * 2001-05-31 2005-04-12 International Business Machines Corporation Method of manufacture of silicon based package
US6793209B1 (en) * 2001-08-28 2004-09-21 Pts Corporation MEMS die holder
JP3745260B2 (ja) * 2001-10-02 2006-02-15 ローム株式会社 半導体装置の製造方法
US6709948B2 (en) * 2001-12-21 2004-03-23 Texas Instruments Incorporated Process for manufacturing a two-axis mirror
JP3553551B2 (ja) * 2002-01-11 2004-08-11 沖電気工業株式会社 半導体ウェハを用いた半導体装置の製造方法
CN1271684C (zh) * 2002-01-25 2006-08-23 松下电器产业株式会社 电子器件的制造方法
JP4791693B2 (ja) * 2002-04-11 2011-10-12 積水化学工業株式会社 半導体チップの製造方法
US7052117B2 (en) 2002-07-03 2006-05-30 Dimatix, Inc. Printhead having a thin pre-fired piezoelectric layer
KR100439511B1 (ko) * 2002-07-05 2004-07-09 삼성전기주식회사 마이크로 전기 기계 구조 칩의 다이싱 방법
US6780733B2 (en) * 2002-09-06 2004-08-24 Motorola, Inc. Thinned semiconductor wafer and die and corresponding method
US7281778B2 (en) 2004-03-15 2007-10-16 Fujifilm Dimatix, Inc. High frequency droplet ejection device and method
US8491076B2 (en) 2004-03-15 2013-07-23 Fujifilm Dimatix, Inc. Fluid droplet ejection devices and methods
US7202141B2 (en) * 2004-03-29 2007-04-10 J.P. Sercel Associates, Inc. Method of separating layers of material
US20050249945A1 (en) * 2004-05-10 2005-11-10 Wen Kun Yang Manufacturing tool for wafer level package and method of placing dies
JP2005342808A (ja) * 2004-05-31 2005-12-15 Oki Electric Ind Co Ltd Memsデバイスの製造方法
DE602004013292T2 (de) * 2004-06-11 2009-05-28 S.O.I. Tec Silicon On Insulator Technologies S.A. Verfahren zur Herstellung eines Verbundsubstrats
US7507638B2 (en) * 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
US20060016547A1 (en) * 2004-07-22 2006-01-26 Chien-Hua Chen System and method for transferring structured material to a substrate
JP2006108280A (ja) * 2004-10-04 2006-04-20 Matsushita Electric Ind Co Ltd 電子部品ピックアップ方法および電子部品搭載方法ならびに電子部品搭載装置
DE102004058876B3 (de) * 2004-12-06 2006-05-24 Infineon Technologies Ag Verfahren zum Aufbringen einer Klebstoffschicht auf dünngeschliffene Halbleiterchips eines Halbleiterwafers
WO2006074016A2 (en) 2004-12-30 2006-07-13 Fujifilm Dimatix, Inc. Ink jet printing
US20060189023A1 (en) * 2005-02-23 2006-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Three dimensional structure formed by using an adhesive silicon wafer process
US7288464B2 (en) * 2005-04-11 2007-10-30 Hewlett-Packard Development Company, L.P. MEMS packaging structure and methods
US20060234412A1 (en) * 2005-04-19 2006-10-19 Hewlett-Packard Development Company, L.P. Intellectual Property Administration MEMS release methods
US20060286768A1 (en) * 2005-06-16 2006-12-21 Intel Corporation Method of supporting microelectronic wafer during backside processing
US8614449B1 (en) * 2005-10-11 2013-12-24 SemiLEDs Optoelectronics Co., Ltd. Protection for the epitaxial structure of metal devices
US7875530B2 (en) * 2005-12-02 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7968379B2 (en) * 2006-03-09 2011-06-28 SemiLEDs Optoelectronics Co., Ltd. Method of separating semiconductor dies
US7452739B2 (en) * 2006-03-09 2008-11-18 Semi-Photonics Co., Ltd. Method of separating semiconductor dies
TWI299888B (en) * 2006-05-03 2008-08-11 Touch Micro System Tech Method of fabricating micro connectors
US20070284681A1 (en) * 2006-06-12 2007-12-13 Intermec Ip Corp. Apparatus and method for protective covering of microelectromechanical system (mems) devices
US20080003780A1 (en) * 2006-06-30 2008-01-03 Haixiao Sun Detachable stiffener for ultra-thin die
DE102006032047A1 (de) * 2006-07-10 2008-01-24 Schott Ag Verfahren zur Herstellung optoelektronischer Bauelemente und damit hergestellte Erzeugnisse
US20080085572A1 (en) * 2006-10-05 2008-04-10 Advanced Chip Engineering Technology Inc. Semiconductor packaging method by using large panel size
US7988247B2 (en) 2007-01-11 2011-08-02 Fujifilm Dimatix, Inc. Ejection of drops having variable drop size from an ink jet printer
US7605009B2 (en) 2007-03-12 2009-10-20 Silverbrook Research Pty Ltd Method of fabrication MEMS integrated circuits
US7678667B2 (en) * 2007-06-20 2010-03-16 Silverbrook Research Pty Ltd Method of bonding MEMS integrated circuits
KR100963675B1 (ko) * 2008-03-14 2010-06-15 제일모직주식회사 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체소자의 제조방법
US8012785B2 (en) * 2009-04-24 2011-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating an integrated CMOS-MEMS device
DE102010009015A1 (de) * 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
DE102010045056B4 (de) * 2010-09-10 2015-03-19 Epcos Ag Verfahren zum Herstellen von Chip-Bauelementen
TWI486259B (zh) * 2010-12-27 2015-06-01 Au Optronics Corp 可撓式基板結構及其製作方法
US8632162B2 (en) 2012-04-24 2014-01-21 Eastman Kodak Company Nozzle plate including permanently bonded fluid channel
US8969177B2 (en) * 2012-06-29 2015-03-03 Applied Materials, Inc. Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film
JP2014029921A (ja) * 2012-07-31 2014-02-13 Sony Corp 半導体基板の処理方法及び半導体基板処理品
TWI549268B (zh) * 2013-02-27 2016-09-11 精材科技股份有限公司 晶圓封裝方法
US9418895B1 (en) * 2015-03-14 2016-08-16 International Business Machines Corporation Dies for RFID devices and sensor applications
US9862600B2 (en) 2015-05-21 2018-01-09 Ams International Ag Chip structure
KR102588785B1 (ko) * 2019-02-25 2023-10-12 미쓰비시덴키 가부시키가이샤 반도체 소자의 제조 방법
TWI851713B (zh) 2019-06-03 2024-08-11 愛爾蘭商滿捷特科技公司 處理mems晶圓的方法及晶圓組件
US20230307284A1 (en) * 2020-07-31 2023-09-28 Bondtech Co., Ltd. Chip bonding system and chip bonding method
CN114148987B (zh) * 2021-11-08 2024-12-20 歌尔微电子股份有限公司 微机电系统装置的制造方法、微机电系统装置和电子设备
JP2024082960A (ja) * 2022-12-09 2024-06-20 株式会社レゾナック 半導体チップを製造する方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714029A (en) * 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
US5187007A (en) * 1985-12-27 1993-02-16 Lintec Corporation Adhesive sheets
US4822755A (en) * 1988-04-25 1989-04-18 Xerox Corporation Method of fabricating large area semiconductor arrays
US5058856A (en) * 1991-05-08 1991-10-22 Hewlett-Packard Company Thermally-actuated microminiature valve
US5476566A (en) 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
CA2115947A1 (en) * 1993-03-03 1994-09-04 Gregory C. Smith Wafer-like processing after sawing dmds
US5435876A (en) * 1993-03-29 1995-07-25 Texas Instruments Incorporated Grid array masking tape process
JPH0722358A (ja) * 1993-06-15 1995-01-24 Sharp Corp 半導体装置の製造方法
US5445559A (en) * 1993-06-24 1995-08-29 Texas Instruments Incorporated Wafer-like processing after sawing DMDs
JP3463398B2 (ja) * 1995-03-10 2003-11-05 株式会社デンソー 半導体装置の製造方法
JP3491378B2 (ja) 1995-04-10 2004-01-26 松下電器産業株式会社 インク噴射型プリンターヘッド基板の切断方法
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren
US5904546A (en) * 1996-02-12 1999-05-18 Micron Technology, Inc. Method and apparatus for dicing semiconductor wafers
US5923995A (en) 1997-04-18 1999-07-13 National Semiconductor Corporation Methods and apparatuses for singulation of microelectromechanical systems
US6184109B1 (en) 1997-07-23 2001-02-06 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US5972781A (en) * 1997-09-30 1999-10-26 Siemens Aktiengesellschaft Method for producing semiconductor chips
JPH11204551A (ja) 1998-01-19 1999-07-30 Sony Corp 半導体装置の製造方法
JP2000223446A (ja) 1998-11-27 2000-08-11 Denso Corp 半導体装置およびその製造方法
US6320266B1 (en) * 1999-03-18 2001-11-20 Advanced Micro Devices, Inc. Technique for reducing breakage of thinned flip-chip multi-layer integrated circuit devices
JP3865184B2 (ja) * 1999-04-22 2007-01-10 富士通株式会社 半導体装置の製造方法
JP2003516630A (ja) * 1999-12-08 2003-05-13 アナログ デバイセス インコーポレーテッド 超小型回路ダイをウェハから分離する方法
JP2001185519A (ja) * 1999-12-24 2001-07-06 Hitachi Ltd 半導体装置及びその製造方法
US6425971B1 (en) * 2000-05-10 2002-07-30 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
US6438954B1 (en) * 2001-04-27 2002-08-27 3M Innovative Properties Company Multi-directional thermal actuator

Also Published As

Publication number Publication date
US20030139018A1 (en) 2003-07-24
EP1301432A4 (de) 2005-07-20
EP1301432B1 (de) 2007-01-10
US6846692B2 (en) 2005-01-25
DE60125943T2 (de) 2007-10-31
AU5452201A (en) 2001-11-20
WO2001085600A1 (en) 2001-11-15
IL152691A (en) 2006-07-05
EP1301432A1 (de) 2003-04-16
AU2005200471A1 (en) 2005-02-24
SG129303A1 (en) 2007-02-26
US6425971B1 (en) 2002-07-30
IL152691A0 (en) 2003-06-24
AU2001254522B2 (en) 2004-11-11
AU2005200471B2 (en) 2005-12-01

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