DE60125943D1 - Verfahren zur herstellung von mikroelektromechanische systeme enthaltenden bauteilen, das ein uv-härtbares band verwendet - Google Patents
Verfahren zur herstellung von mikroelektromechanische systeme enthaltenden bauteilen, das ein uv-härtbares band verwendetInfo
- Publication number
- DE60125943D1 DE60125943D1 DE60125943T DE60125943T DE60125943D1 DE 60125943 D1 DE60125943 D1 DE 60125943D1 DE 60125943 T DE60125943 T DE 60125943T DE 60125943 T DE60125943 T DE 60125943T DE 60125943 D1 DE60125943 D1 DE 60125943D1
- Authority
- DE
- Germany
- Prior art keywords
- hardenable
- band
- containing components
- systems containing
- microelectromechanical systems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00904—Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
- Y10T156/1064—Partial cutting [e.g., grooving or incising]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/14—Layer or component removable to expose adhesive
- Y10T428/149—Sectional layer removable
- Y10T428/1495—Adhesive is on removable layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Dicing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US567951 | 2000-05-10 | ||
| US09/567,951 US6425971B1 (en) | 2000-05-10 | 2000-05-10 | Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes |
| PCT/AU2001/000502 WO2001085600A1 (en) | 2000-05-10 | 2001-05-02 | Method of fabricating devices incorporating microelectromechanical systems using uv curable tapes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60125943D1 true DE60125943D1 (de) | 2007-02-22 |
| DE60125943T2 DE60125943T2 (de) | 2007-10-31 |
Family
ID=24269301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60125943T Expired - Lifetime DE60125943T2 (de) | 2000-05-10 | 2001-05-02 | Verfahren zur herstellung von mikroelektromechanische systeme enthaltenden bauteilen, das ein uv-härtbares band verwendet |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6425971B1 (de) |
| EP (1) | EP1301432B1 (de) |
| AU (3) | AU2001254522B2 (de) |
| DE (1) | DE60125943T2 (de) |
| IL (1) | IL152691A (de) |
| SG (1) | SG129303A1 (de) |
| WO (1) | WO2001085600A1 (de) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6425971B1 (en) * | 2000-05-10 | 2002-07-30 | Silverbrook Research Pty Ltd | Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes |
| JP3631956B2 (ja) * | 2000-05-12 | 2005-03-23 | 富士通株式会社 | 半導体チップの実装方法 |
| US6610167B1 (en) * | 2001-01-16 | 2003-08-26 | Amkor Technology, Inc. | Method for fabricating a special-purpose die using a polymerizable tape |
| US6572944B1 (en) | 2001-01-16 | 2003-06-03 | Amkor Technology, Inc. | Structure for fabricating a special-purpose die using a polymerizable tape |
| JP4649745B2 (ja) | 2001-02-01 | 2011-03-16 | ソニー株式会社 | 発光素子の転写方法 |
| US6982184B2 (en) * | 2001-05-02 | 2006-01-03 | Silverbrook Research Pty Ltd | Method of fabricating MEMS devices on a silicon wafer |
| US6878608B2 (en) * | 2001-05-31 | 2005-04-12 | International Business Machines Corporation | Method of manufacture of silicon based package |
| US6793209B1 (en) * | 2001-08-28 | 2004-09-21 | Pts Corporation | MEMS die holder |
| JP3745260B2 (ja) * | 2001-10-02 | 2006-02-15 | ローム株式会社 | 半導体装置の製造方法 |
| US6709948B2 (en) * | 2001-12-21 | 2004-03-23 | Texas Instruments Incorporated | Process for manufacturing a two-axis mirror |
| JP3553551B2 (ja) * | 2002-01-11 | 2004-08-11 | 沖電気工業株式会社 | 半導体ウェハを用いた半導体装置の製造方法 |
| CN1271684C (zh) * | 2002-01-25 | 2006-08-23 | 松下电器产业株式会社 | 电子器件的制造方法 |
| JP4791693B2 (ja) * | 2002-04-11 | 2011-10-12 | 積水化学工業株式会社 | 半導体チップの製造方法 |
| US7052117B2 (en) | 2002-07-03 | 2006-05-30 | Dimatix, Inc. | Printhead having a thin pre-fired piezoelectric layer |
| KR100439511B1 (ko) * | 2002-07-05 | 2004-07-09 | 삼성전기주식회사 | 마이크로 전기 기계 구조 칩의 다이싱 방법 |
| US6780733B2 (en) * | 2002-09-06 | 2004-08-24 | Motorola, Inc. | Thinned semiconductor wafer and die and corresponding method |
| US7281778B2 (en) | 2004-03-15 | 2007-10-16 | Fujifilm Dimatix, Inc. | High frequency droplet ejection device and method |
| US8491076B2 (en) | 2004-03-15 | 2013-07-23 | Fujifilm Dimatix, Inc. | Fluid droplet ejection devices and methods |
| US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
| US20050249945A1 (en) * | 2004-05-10 | 2005-11-10 | Wen Kun Yang | Manufacturing tool for wafer level package and method of placing dies |
| JP2005342808A (ja) * | 2004-05-31 | 2005-12-15 | Oki Electric Ind Co Ltd | Memsデバイスの製造方法 |
| DE602004013292T2 (de) * | 2004-06-11 | 2009-05-28 | S.O.I. Tec Silicon On Insulator Technologies S.A. | Verfahren zur Herstellung eines Verbundsubstrats |
| US7507638B2 (en) * | 2004-06-30 | 2009-03-24 | Freescale Semiconductor, Inc. | Ultra-thin die and method of fabricating same |
| US20060016547A1 (en) * | 2004-07-22 | 2006-01-26 | Chien-Hua Chen | System and method for transferring structured material to a substrate |
| JP2006108280A (ja) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | 電子部品ピックアップ方法および電子部品搭載方法ならびに電子部品搭載装置 |
| DE102004058876B3 (de) * | 2004-12-06 | 2006-05-24 | Infineon Technologies Ag | Verfahren zum Aufbringen einer Klebstoffschicht auf dünngeschliffene Halbleiterchips eines Halbleiterwafers |
| WO2006074016A2 (en) | 2004-12-30 | 2006-07-13 | Fujifilm Dimatix, Inc. | Ink jet printing |
| US20060189023A1 (en) * | 2005-02-23 | 2006-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional structure formed by using an adhesive silicon wafer process |
| US7288464B2 (en) * | 2005-04-11 | 2007-10-30 | Hewlett-Packard Development Company, L.P. | MEMS packaging structure and methods |
| US20060234412A1 (en) * | 2005-04-19 | 2006-10-19 | Hewlett-Packard Development Company, L.P. Intellectual Property Administration | MEMS release methods |
| US20060286768A1 (en) * | 2005-06-16 | 2006-12-21 | Intel Corporation | Method of supporting microelectronic wafer during backside processing |
| US8614449B1 (en) * | 2005-10-11 | 2013-12-24 | SemiLEDs Optoelectronics Co., Ltd. | Protection for the epitaxial structure of metal devices |
| US7875530B2 (en) * | 2005-12-02 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7968379B2 (en) * | 2006-03-09 | 2011-06-28 | SemiLEDs Optoelectronics Co., Ltd. | Method of separating semiconductor dies |
| US7452739B2 (en) * | 2006-03-09 | 2008-11-18 | Semi-Photonics Co., Ltd. | Method of separating semiconductor dies |
| TWI299888B (en) * | 2006-05-03 | 2008-08-11 | Touch Micro System Tech | Method of fabricating micro connectors |
| US20070284681A1 (en) * | 2006-06-12 | 2007-12-13 | Intermec Ip Corp. | Apparatus and method for protective covering of microelectromechanical system (mems) devices |
| US20080003780A1 (en) * | 2006-06-30 | 2008-01-03 | Haixiao Sun | Detachable stiffener for ultra-thin die |
| DE102006032047A1 (de) * | 2006-07-10 | 2008-01-24 | Schott Ag | Verfahren zur Herstellung optoelektronischer Bauelemente und damit hergestellte Erzeugnisse |
| US20080085572A1 (en) * | 2006-10-05 | 2008-04-10 | Advanced Chip Engineering Technology Inc. | Semiconductor packaging method by using large panel size |
| US7988247B2 (en) | 2007-01-11 | 2011-08-02 | Fujifilm Dimatix, Inc. | Ejection of drops having variable drop size from an ink jet printer |
| US7605009B2 (en) | 2007-03-12 | 2009-10-20 | Silverbrook Research Pty Ltd | Method of fabrication MEMS integrated circuits |
| US7678667B2 (en) * | 2007-06-20 | 2010-03-16 | Silverbrook Research Pty Ltd | Method of bonding MEMS integrated circuits |
| KR100963675B1 (ko) * | 2008-03-14 | 2010-06-15 | 제일모직주식회사 | 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체소자의 제조방법 |
| US8012785B2 (en) * | 2009-04-24 | 2011-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating an integrated CMOS-MEMS device |
| DE102010009015A1 (de) * | 2010-02-24 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips |
| DE102010045056B4 (de) * | 2010-09-10 | 2015-03-19 | Epcos Ag | Verfahren zum Herstellen von Chip-Bauelementen |
| TWI486259B (zh) * | 2010-12-27 | 2015-06-01 | Au Optronics Corp | 可撓式基板結構及其製作方法 |
| US8632162B2 (en) | 2012-04-24 | 2014-01-21 | Eastman Kodak Company | Nozzle plate including permanently bonded fluid channel |
| US8969177B2 (en) * | 2012-06-29 | 2015-03-03 | Applied Materials, Inc. | Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film |
| JP2014029921A (ja) * | 2012-07-31 | 2014-02-13 | Sony Corp | 半導体基板の処理方法及び半導体基板処理品 |
| TWI549268B (zh) * | 2013-02-27 | 2016-09-11 | 精材科技股份有限公司 | 晶圓封裝方法 |
| US9418895B1 (en) * | 2015-03-14 | 2016-08-16 | International Business Machines Corporation | Dies for RFID devices and sensor applications |
| US9862600B2 (en) | 2015-05-21 | 2018-01-09 | Ams International Ag | Chip structure |
| KR102588785B1 (ko) * | 2019-02-25 | 2023-10-12 | 미쓰비시덴키 가부시키가이샤 | 반도체 소자의 제조 방법 |
| TWI851713B (zh) | 2019-06-03 | 2024-08-11 | 愛爾蘭商滿捷特科技公司 | 處理mems晶圓的方法及晶圓組件 |
| US20230307284A1 (en) * | 2020-07-31 | 2023-09-28 | Bondtech Co., Ltd. | Chip bonding system and chip bonding method |
| CN114148987B (zh) * | 2021-11-08 | 2024-12-20 | 歌尔微电子股份有限公司 | 微机电系统装置的制造方法、微机电系统装置和电子设备 |
| JP2024082960A (ja) * | 2022-12-09 | 2024-06-20 | 株式会社レゾナック | 半導体チップを製造する方法 |
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| US5714029A (en) * | 1984-03-12 | 1998-02-03 | Nitto Electric Industrial Co., Ltd. | Process for working a semiconductor wafer |
| US5187007A (en) * | 1985-12-27 | 1993-02-16 | Lintec Corporation | Adhesive sheets |
| US4822755A (en) * | 1988-04-25 | 1989-04-18 | Xerox Corporation | Method of fabricating large area semiconductor arrays |
| US5058856A (en) * | 1991-05-08 | 1991-10-22 | Hewlett-Packard Company | Thermally-actuated microminiature valve |
| US5476566A (en) | 1992-09-02 | 1995-12-19 | Motorola, Inc. | Method for thinning a semiconductor wafer |
| CA2115947A1 (en) * | 1993-03-03 | 1994-09-04 | Gregory C. Smith | Wafer-like processing after sawing dmds |
| US5435876A (en) * | 1993-03-29 | 1995-07-25 | Texas Instruments Incorporated | Grid array masking tape process |
| JPH0722358A (ja) * | 1993-06-15 | 1995-01-24 | Sharp Corp | 半導体装置の製造方法 |
| US5445559A (en) * | 1993-06-24 | 1995-08-29 | Texas Instruments Incorporated | Wafer-like processing after sawing DMDs |
| JP3463398B2 (ja) * | 1995-03-10 | 2003-11-05 | 株式会社デンソー | 半導体装置の製造方法 |
| JP3491378B2 (ja) | 1995-04-10 | 2004-01-26 | 松下電器産業株式会社 | インク噴射型プリンターヘッド基板の切断方法 |
| DE19536438A1 (de) * | 1995-09-29 | 1997-04-03 | Siemens Ag | Halbleiterbauelement und Herstellverfahren |
| US5904546A (en) * | 1996-02-12 | 1999-05-18 | Micron Technology, Inc. | Method and apparatus for dicing semiconductor wafers |
| US5923995A (en) | 1997-04-18 | 1999-07-13 | National Semiconductor Corporation | Methods and apparatuses for singulation of microelectromechanical systems |
| US6184109B1 (en) | 1997-07-23 | 2001-02-06 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
| US5972781A (en) * | 1997-09-30 | 1999-10-26 | Siemens Aktiengesellschaft | Method for producing semiconductor chips |
| JPH11204551A (ja) | 1998-01-19 | 1999-07-30 | Sony Corp | 半導体装置の製造方法 |
| JP2000223446A (ja) | 1998-11-27 | 2000-08-11 | Denso Corp | 半導体装置およびその製造方法 |
| US6320266B1 (en) * | 1999-03-18 | 2001-11-20 | Advanced Micro Devices, Inc. | Technique for reducing breakage of thinned flip-chip multi-layer integrated circuit devices |
| JP3865184B2 (ja) * | 1999-04-22 | 2007-01-10 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2003516630A (ja) * | 1999-12-08 | 2003-05-13 | アナログ デバイセス インコーポレーテッド | 超小型回路ダイをウェハから分離する方法 |
| JP2001185519A (ja) * | 1999-12-24 | 2001-07-06 | Hitachi Ltd | 半導体装置及びその製造方法 |
| US6425971B1 (en) * | 2000-05-10 | 2002-07-30 | Silverbrook Research Pty Ltd | Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes |
| US6438954B1 (en) * | 2001-04-27 | 2002-08-27 | 3M Innovative Properties Company | Multi-directional thermal actuator |
-
2000
- 2000-05-10 US US09/567,951 patent/US6425971B1/en not_active Expired - Lifetime
-
2001
- 2001-05-02 DE DE60125943T patent/DE60125943T2/de not_active Expired - Lifetime
- 2001-05-02 AU AU2001254522A patent/AU2001254522B2/en not_active Ceased
- 2001-05-02 EP EP01927493A patent/EP1301432B1/de not_active Expired - Lifetime
- 2001-05-02 WO PCT/AU2001/000502 patent/WO2001085600A1/en not_active Ceased
- 2001-05-02 AU AU5452201A patent/AU5452201A/xx active Pending
- 2001-05-02 SG SG200406428A patent/SG129303A1/en unknown
- 2001-05-02 US US10/258,517 patent/US6846692B2/en not_active Expired - Lifetime
- 2001-05-02 IL IL152691A patent/IL152691A/en not_active IP Right Cessation
-
2005
- 2005-02-04 AU AU2005200471A patent/AU2005200471B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20030139018A1 (en) | 2003-07-24 |
| EP1301432A4 (de) | 2005-07-20 |
| EP1301432B1 (de) | 2007-01-10 |
| US6846692B2 (en) | 2005-01-25 |
| DE60125943T2 (de) | 2007-10-31 |
| AU5452201A (en) | 2001-11-20 |
| WO2001085600A1 (en) | 2001-11-15 |
| IL152691A (en) | 2006-07-05 |
| EP1301432A1 (de) | 2003-04-16 |
| AU2005200471A1 (en) | 2005-02-24 |
| SG129303A1 (en) | 2007-02-26 |
| US6425971B1 (en) | 2002-07-30 |
| IL152691A0 (en) | 2003-06-24 |
| AU2001254522B2 (en) | 2004-11-11 |
| AU2005200471B2 (en) | 2005-12-01 |
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| 8364 | No opposition during term of opposition |