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DE60041199D1 - Programmierverfahren für nichtflüchtigen Speicher - Google Patents

Programmierverfahren für nichtflüchtigen Speicher

Info

Publication number
DE60041199D1
DE60041199D1 DE60041199T DE60041199T DE60041199D1 DE 60041199 D1 DE60041199 D1 DE 60041199D1 DE 60041199 T DE60041199 T DE 60041199T DE 60041199 T DE60041199 T DE 60041199T DE 60041199 D1 DE60041199 D1 DE 60041199D1
Authority
DE
Germany
Prior art keywords
volatile memory
programming procedure
programming
procedure
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041199T
Other languages
English (en)
Inventor
Marco Pasotti
Sandre Guido De
Giovanni Guaitini
David Iezzi
Marco Poles
Pierluigi Rolandi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60041199D1 publication Critical patent/DE60041199D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE60041199T 2000-12-29 2000-12-29 Programmierverfahren für nichtflüchtigen Speicher Expired - Lifetime DE60041199D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00830866A EP1220228B1 (de) 2000-12-29 2000-12-29 Programmierverfahren für nichtflüchtigen Speicher

Publications (1)

Publication Number Publication Date
DE60041199D1 true DE60041199D1 (de) 2009-02-05

Family

ID=8175615

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041199T Expired - Lifetime DE60041199D1 (de) 2000-12-29 2000-12-29 Programmierverfahren für nichtflüchtigen Speicher

Country Status (3)

Country Link
US (1) US6655758B2 (de)
EP (1) EP1220228B1 (de)
DE (1) DE60041199D1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10303316A1 (de) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Schneller remanenter Speicher
JP4469649B2 (ja) * 2003-09-17 2010-05-26 株式会社ルネサステクノロジ 半導体フラッシュメモリ
JP4223427B2 (ja) * 2004-03-30 2009-02-12 株式会社ルネサステクノロジ 不揮発性半導体記憶装置及びそのデータ書き換え方法
US7123517B2 (en) * 2004-10-07 2006-10-17 International Business Machines Corporation Reprogrammable integrated circuit (IC) with overwritable nonvolatile storage
US7312641B2 (en) * 2004-12-28 2007-12-25 Spansion Llc Sense amplifiers with high voltage swing
JP4907896B2 (ja) * 2005-04-12 2012-04-04 株式会社東芝 不揮発性半導体記憶装置
WO2008127458A2 (en) 2006-12-06 2008-10-23 Fusion Multisystems, Inc. (Dba Fusion-Io) Apparatus, system, and method for a shared, front-end, distributed raid
WO2009067633A1 (en) * 2007-11-20 2009-05-28 California Institute Of Technology Rank modulation for memory devices
US8225180B2 (en) * 2007-11-20 2012-07-17 California Institute Of Technology Error correcting codes for rank modulation
US8266503B2 (en) 2009-03-13 2012-09-11 Fusion-Io Apparatus, system, and method for using multi-level cell storage in a single-level cell mode
US9223514B2 (en) 2009-09-09 2015-12-29 SanDisk Technologies, Inc. Erase suspend/resume for memory
CN102129884A (zh) * 2010-01-20 2011-07-20 旺宏电子股份有限公司 一种利用位线动态切换增加编程效率的方法与装置
US8854882B2 (en) 2010-01-27 2014-10-07 Intelligent Intellectual Property Holdings 2 Llc Configuring storage cells
WO2011094454A2 (en) * 2010-01-27 2011-08-04 Fusion-Io, Inc. Apparatus, system, and method for determining a read voltage threshold for solid-state storage media
US8661184B2 (en) 2010-01-27 2014-02-25 Fusion-Io, Inc. Managing non-volatile media
US8380915B2 (en) 2010-01-27 2013-02-19 Fusion-Io, Inc. Apparatus, system, and method for managing solid-state storage media
US9245653B2 (en) 2010-03-15 2016-01-26 Intelligent Intellectual Property Holdings 2 Llc Reduced level cell mode for non-volatile memory
US8984216B2 (en) 2010-09-09 2015-03-17 Fusion-Io, Llc Apparatus, system, and method for managing lifetime of a storage device
US8527693B2 (en) 2010-12-13 2013-09-03 Fusion IO, Inc. Apparatus, system, and method for auto-commit memory
US9047178B2 (en) 2010-12-13 2015-06-02 SanDisk Technologies, Inc. Auto-commit memory synchronization
US10817421B2 (en) 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent data structures
US9208071B2 (en) 2010-12-13 2015-12-08 SanDisk Technologies, Inc. Apparatus, system, and method for accessing memory
US10817502B2 (en) 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent memory management
US9218278B2 (en) 2010-12-13 2015-12-22 SanDisk Technologies, Inc. Auto-commit memory
US9443566B2 (en) 2012-10-24 2016-09-13 Stmicroelectronics S.R.L. Identification of a condition of a sector of memory cells in a non-volatile memory
FR3029342B1 (fr) * 2014-12-01 2018-01-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit de lecture pour memoire resistive
JP6997595B2 (ja) * 2017-11-09 2022-01-17 ルネサスエレクトロニクス株式会社 半導体記憶装置、及び半導体記憶装置の制御方法
US12057831B2 (en) * 2019-07-12 2024-08-06 Arizona Board Of Regents On Behalf Of Arizona State University Threshold logic gates using flash transistors
EP4365904A1 (de) * 2022-11-01 2024-05-08 EM Microelectronic-Marin SA Verfahren und speichersystem zur redundanten speicherung sensibler daten und einstellung eines referenzwertes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295797A (ja) * 1985-10-21 1987-05-02 Sharp Corp 不揮発性半導体記憶装置
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
JP3160316B2 (ja) * 1991-07-25 2001-04-25 株式会社東芝 不揮発性半導体記憶装置
FR2752324B1 (fr) * 1996-08-08 1998-09-18 Sgs Thomson Microelectronics Memoire non volatile en circuit-integre a lecture rapide
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
US5754477A (en) * 1997-01-29 1998-05-19 Micron Technology, Inc. Differential flash memory cell and method for programming
US6011722A (en) * 1998-10-13 2000-01-04 Lucent Technologies Inc. Method for erasing and programming memory devices

Also Published As

Publication number Publication date
EP1220228B1 (de) 2008-12-24
US6655758B2 (en) 2003-12-02
US20020118573A1 (en) 2002-08-29
EP1220228A1 (de) 2002-07-03

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Legal Events

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