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DE60039545D1 - Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode - Google Patents

Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode

Info

Publication number
DE60039545D1
DE60039545D1 DE60039545T DE60039545T DE60039545D1 DE 60039545 D1 DE60039545 D1 DE 60039545D1 DE 60039545 T DE60039545 T DE 60039545T DE 60039545 T DE60039545 T DE 60039545T DE 60039545 D1 DE60039545 D1 DE 60039545D1
Authority
DE
Germany
Prior art keywords
emitting
manufacture
light
semiconductor device
photosensitive semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039545T
Other languages
English (en)
Inventor
Josuke Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE60039545D1 publication Critical patent/DE60039545D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
DE60039545T 2000-10-20 2000-10-20 Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode Expired - Lifetime DE60039545D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/007359 WO2002035612A1 (fr) 2000-10-20 2000-10-20 Dispositif a semi-conducteur emetteur ou recepteur de lumiere et procede de fabrication dudit dispositif

Publications (1)

Publication Number Publication Date
DE60039545D1 true DE60039545D1 (de) 2008-08-28

Family

ID=11736611

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60039535T Expired - Lifetime DE60039535D1 (de) 2000-10-20 2000-10-20 Lichtemittierdende bzw. lichtempfindliche halbleiteranordnung und ihre herstellungsmethode
DE60039545T Expired - Lifetime DE60039545D1 (de) 2000-10-20 2000-10-20 Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60039535T Expired - Lifetime DE60039535D1 (de) 2000-10-20 2000-10-20 Lichtemittierdende bzw. lichtempfindliche halbleiteranordnung und ihre herstellungsmethode

Country Status (10)

Country Link
US (1) US6744073B1 (de)
EP (2) EP1646090B1 (de)
JP (1) JP3938908B2 (de)
KR (1) KR100549249B1 (de)
CN (1) CN1182590C (de)
AU (1) AU773312B2 (de)
CA (1) CA2393219C (de)
DE (2) DE60039535D1 (de)
TW (1) TW469655B (de)
WO (1) WO2002035612A1 (de)

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WO2003017383A1 (fr) * 2001-08-13 2003-02-27 Josuke Nakata Dispositif a semi-conducteur et procede de fabrication correspondant
WO2003017382A1 (en) * 2001-08-13 2003-02-27 Josuke Nakata Light-emitting or light-receiving semiconductor module and method of its manufacture
US7602035B2 (en) * 2001-10-19 2009-10-13 Josuke Nakata Light emitting or light receiving semiconductor module and method for manufacturing same
WO2003056633A1 (fr) * 2001-12-25 2003-07-10 Josuke Nakata Appareil semi-conducteur d'emission et de reception de lumiere
JP3902210B2 (ja) * 2002-05-02 2007-04-04 仗祐 中田 受光又は発光用パネルおよびその製造方法
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US7387400B2 (en) * 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
EP1620903B1 (de) * 2003-04-30 2017-08-16 Cree, Inc. Festkörper-hochleistungslichtquelle
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
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US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
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US7614759B2 (en) 2005-12-22 2009-11-10 Cree Led Lighting Solutions, Inc. Lighting device
KR101135507B1 (ko) * 2006-01-11 2012-04-13 교세미 가부시키가이샤 수광 또는 발광용 반도체 모듈
CA2640083A1 (en) * 2006-02-06 2007-08-16 Kyosemi Corporation Light receiving or emitting semiconductor module
JP2009534866A (ja) * 2006-04-24 2009-09-24 クリー， インコーポレイティッド 横向き平面実装白色ｌｅｄ
AU2012227357C1 (en) * 2006-06-14 2014-08-07 Kyosemi Corporation Semiconductor device module
WO2007144944A1 (ja) 2006-06-14 2007-12-21 Kyosemi Corporation ロッド形半導体デバイス
CA2654941C (en) 2006-07-04 2013-01-08 Kyosemi Corporation Panel-shaped semiconductor module
WO2008004304A1 (fr) 2006-07-07 2008-01-10 Kyosemi Corporation Module semi-conducteur en forme de panneau
WO2008018116A1 (fr) 2006-08-07 2008-02-14 Kyosemi Corporation Module semi-conducteur pour une génération d'électricité ou une émission de lumière
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
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US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
EP2320471A4 (de) * 2008-08-08 2015-11-04 Sphelar Power Corp Tageslicht-solarbatteriemodul
CN102113125B (zh) * 2008-08-08 2013-06-05 京半导体股份有限公司 采光型太阳电池模组
ES2705690T3 (es) * 2010-01-08 2019-03-26 Tae Tech Inc Conversión de fotones de alta energía en electricidad
US9859348B2 (en) * 2011-10-14 2018-01-02 Diftek Lasers, Inc. Electronic device and method of making thereof
US9209019B2 (en) 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
CN103858221B (zh) * 2011-10-14 2017-02-15 迪夫泰克激光公司 位于衬底上的平坦化半导体颗粒
US9455307B2 (en) * 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
TWI506801B (zh) 2011-12-09 2015-11-01 鴻海精密工業股份有限公司 太陽能電池組
CN103165690B (zh) 2011-12-16 2015-11-25 清华大学 太阳能电池
CN103165719B (zh) 2011-12-16 2016-04-13 清华大学 太阳能电池
CN103187476B (zh) 2011-12-29 2016-06-15 清华大学 太阳能电池的制备方法
CN103187453B (zh) 2011-12-29 2016-04-13 清华大学 太阳能电池
CN103187456B (zh) 2011-12-29 2015-08-26 清华大学 太阳能电池
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Also Published As

Publication number Publication date
WO2002035612A1 (fr) 2002-05-02
CA2393219A1 (en) 2002-05-02
CA2393219C (en) 2007-01-09
US6744073B1 (en) 2004-06-01
AU7953300A (en) 2002-05-06
CN1373907A (zh) 2002-10-09
TW469655B (en) 2001-12-21
EP1253649B1 (de) 2008-07-16
HK1084237A1 (en) 2006-07-21
EP1253649A1 (de) 2002-10-30
AU773312B2 (en) 2004-05-20
DE60039535D1 (de) 2008-08-28
KR20020069349A (ko) 2002-08-30
CN1182590C (zh) 2004-12-29
EP1646090B1 (de) 2008-07-16
JP3938908B2 (ja) 2007-06-27
EP1253649A4 (de) 2005-11-16
JPWO2002035612A1 (ja) 2004-03-04
KR100549249B1 (ko) 2006-02-03
EP1646090A1 (de) 2006-04-12

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