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DE60038524D1 - Elektrode für halbleiteranordnung und verfahren zum herstellen - Google Patents

Elektrode für halbleiteranordnung und verfahren zum herstellen

Info

Publication number
DE60038524D1
DE60038524D1 DE60038524T DE60038524T DE60038524D1 DE 60038524 D1 DE60038524 D1 DE 60038524D1 DE 60038524 T DE60038524 T DE 60038524T DE 60038524 T DE60038524 T DE 60038524T DE 60038524 D1 DE60038524 D1 DE 60038524D1
Authority
DE
Germany
Prior art keywords
electrode
manufacturing
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60038524T
Other languages
English (en)
Inventor
Koichi Toyosaki
Akifumi Nakajima
Naoki Tsukiji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE60038524D1 publication Critical patent/DE60038524D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04252Electrodes, e.g. characterised by the structure characterised by the material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
DE60038524T 1999-02-18 2000-02-17 Elektrode für halbleiteranordnung und verfahren zum herstellen Expired - Lifetime DE60038524D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4027799 1999-02-18
JP4027899 1999-02-18
PCT/JP2000/000885 WO2000049645A1 (fr) 1999-02-18 2000-02-17 Electrode pour dispositif a semi-conducteur et son procede de fabrication

Publications (1)

Publication Number Publication Date
DE60038524D1 true DE60038524D1 (de) 2008-05-21

Family

ID=26379728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60038524T Expired - Lifetime DE60038524D1 (de) 1999-02-18 2000-02-17 Elektrode für halbleiteranordnung und verfahren zum herstellen

Country Status (6)

Country Link
US (1) US6639316B1 (de)
EP (1) EP1091393B1 (de)
JP (1) JP4865130B2 (de)
CA (1) CA2328907A1 (de)
DE (1) DE60038524D1 (de)
WO (1) WO2000049645A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4703198B2 (ja) * 2005-01-24 2011-06-15 三菱電機株式会社 半導体レーザ装置およびその製造方法
JP4963807B2 (ja) * 2005-08-04 2012-06-27 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
JPWO2008120432A1 (ja) * 2007-03-28 2010-07-15 パナソニック株式会社 オーミック電極構造体および半導体素子
JP5532743B2 (ja) * 2009-08-20 2014-06-25 三菱電機株式会社 半導体装置及びその製造方法
JP5393751B2 (ja) * 2011-09-28 2014-01-22 株式会社沖データ 発光装置、発光素子アレイ、および画像表示装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179533A (en) * 1978-04-25 1979-12-18 The United States Of America As Represented By The Secretary Of The Navy Multi-refractory films for gallium arsenide devices
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
JPS59220966A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体装置
JPS61108166A (ja) * 1984-10-31 1986-05-26 Nec Corp 半導体素子の電極形成方法
JPS6220348A (ja) * 1985-07-19 1987-01-28 Hitachi Ltd ウエハ自公転機構
US5187111A (en) * 1985-09-27 1993-02-16 Kabushiki Kaisha Toshiba Method of manufacturing Schottky barrier gate FET
JPS6354774A (ja) 1986-08-25 1988-03-09 Toshiba Corp 化合物半導体装置の製造方法
JP2503217B2 (ja) * 1986-12-19 1996-06-05 富士通株式会社 電極配線の形成方法
JPH0387067A (ja) * 1989-06-16 1991-04-11 Sumitomo Electric Ind Ltd 3―5族化合物半導体素子の電極構造及びその形成方法
US5260603A (en) * 1990-01-25 1993-11-09 Kabushiki Kaisha Toshiba Electrode structure of semiconductor device for use in GaAs compound substrate
JPH03244128A (ja) * 1990-02-22 1991-10-30 Toshiba Corp 半導体装置
JPH05259107A (ja) * 1992-03-10 1993-10-08 Sumitomo Electric Ind Ltd オーミック電極およびその製造方法
DE4405716C2 (de) * 1994-02-23 1996-10-31 Telefunken Microelectron Verfahren zur Herstellung von ohmschen Kontakten für Verbindungshalbleiter
JPH07273316A (ja) * 1994-03-30 1995-10-20 Nippondenso Co Ltd 半導体装置
KR960026483A (ko) * 1994-12-15 1996-07-22 구자홍 반도체소자 제조방법
JP3623292B2 (ja) * 1995-11-21 2005-02-23 株式会社アルバック 真空蒸着用基板傾斜自公転装置
US6268618B1 (en) * 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
JPH11243259A (ja) * 1997-12-25 1999-09-07 Denso Corp 半導体レーザおよび半導体レーザの駆動方法

Also Published As

Publication number Publication date
EP1091393A1 (de) 2001-04-11
CA2328907A1 (en) 2000-08-24
EP1091393A4 (de) 2005-03-02
US6639316B1 (en) 2003-10-28
JP4865130B2 (ja) 2012-02-01
WO2000049645A1 (fr) 2000-08-24
EP1091393B1 (de) 2008-04-09

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Legal Events

Date Code Title Description
8332 No legal effect for de