DE60038524D1 - Elektrode für halbleiteranordnung und verfahren zum herstellen - Google Patents
Elektrode für halbleiteranordnung und verfahren zum herstellenInfo
- Publication number
- DE60038524D1 DE60038524D1 DE60038524T DE60038524T DE60038524D1 DE 60038524 D1 DE60038524 D1 DE 60038524D1 DE 60038524 T DE60038524 T DE 60038524T DE 60038524 T DE60038524 T DE 60038524T DE 60038524 D1 DE60038524 D1 DE 60038524D1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- manufacturing
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4027799 | 1999-02-18 | ||
| JP4027899 | 1999-02-18 | ||
| PCT/JP2000/000885 WO2000049645A1 (fr) | 1999-02-18 | 2000-02-17 | Electrode pour dispositif a semi-conducteur et son procede de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60038524D1 true DE60038524D1 (de) | 2008-05-21 |
Family
ID=26379728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60038524T Expired - Lifetime DE60038524D1 (de) | 1999-02-18 | 2000-02-17 | Elektrode für halbleiteranordnung und verfahren zum herstellen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6639316B1 (de) |
| EP (1) | EP1091393B1 (de) |
| JP (1) | JP4865130B2 (de) |
| CA (1) | CA2328907A1 (de) |
| DE (1) | DE60038524D1 (de) |
| WO (1) | WO2000049645A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4703198B2 (ja) * | 2005-01-24 | 2011-06-15 | 三菱電機株式会社 | 半導体レーザ装置およびその製造方法 |
| JP4963807B2 (ja) * | 2005-08-04 | 2012-06-27 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JPWO2008120432A1 (ja) * | 2007-03-28 | 2010-07-15 | パナソニック株式会社 | オーミック電極構造体および半導体素子 |
| JP5532743B2 (ja) * | 2009-08-20 | 2014-06-25 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| JP5393751B2 (ja) * | 2011-09-28 | 2014-01-22 | 株式会社沖データ | 発光装置、発光素子アレイ、および画像表示装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4179533A (en) * | 1978-04-25 | 1979-12-18 | The United States Of America As Represented By The Secretary Of The Navy | Multi-refractory films for gallium arsenide devices |
| US4186410A (en) * | 1978-06-27 | 1980-01-29 | Bell Telephone Laboratories, Incorporated | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
| JPS59220966A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | 半導体装置 |
| JPS61108166A (ja) * | 1984-10-31 | 1986-05-26 | Nec Corp | 半導体素子の電極形成方法 |
| JPS6220348A (ja) * | 1985-07-19 | 1987-01-28 | Hitachi Ltd | ウエハ自公転機構 |
| US5187111A (en) * | 1985-09-27 | 1993-02-16 | Kabushiki Kaisha Toshiba | Method of manufacturing Schottky barrier gate FET |
| JPS6354774A (ja) | 1986-08-25 | 1988-03-09 | Toshiba Corp | 化合物半導体装置の製造方法 |
| JP2503217B2 (ja) * | 1986-12-19 | 1996-06-05 | 富士通株式会社 | 電極配線の形成方法 |
| JPH0387067A (ja) * | 1989-06-16 | 1991-04-11 | Sumitomo Electric Ind Ltd | 3―5族化合物半導体素子の電極構造及びその形成方法 |
| US5260603A (en) * | 1990-01-25 | 1993-11-09 | Kabushiki Kaisha Toshiba | Electrode structure of semiconductor device for use in GaAs compound substrate |
| JPH03244128A (ja) * | 1990-02-22 | 1991-10-30 | Toshiba Corp | 半導体装置 |
| JPH05259107A (ja) * | 1992-03-10 | 1993-10-08 | Sumitomo Electric Ind Ltd | オーミック電極およびその製造方法 |
| DE4405716C2 (de) * | 1994-02-23 | 1996-10-31 | Telefunken Microelectron | Verfahren zur Herstellung von ohmschen Kontakten für Verbindungshalbleiter |
| JPH07273316A (ja) * | 1994-03-30 | 1995-10-20 | Nippondenso Co Ltd | 半導体装置 |
| KR960026483A (ko) * | 1994-12-15 | 1996-07-22 | 구자홍 | 반도체소자 제조방법 |
| JP3623292B2 (ja) * | 1995-11-21 | 2005-02-23 | 株式会社アルバック | 真空蒸着用基板傾斜自公転装置 |
| US6268618B1 (en) * | 1997-05-08 | 2001-07-31 | Showa Denko K.K. | Electrode for light-emitting semiconductor devices and method of producing the electrode |
| JPH11243259A (ja) * | 1997-12-25 | 1999-09-07 | Denso Corp | 半導体レーザおよび半導体レーザの駆動方法 |
-
2000
- 2000-02-17 CA CA002328907A patent/CA2328907A1/en not_active Abandoned
- 2000-02-17 DE DE60038524T patent/DE60038524D1/de not_active Expired - Lifetime
- 2000-02-17 JP JP2000600295A patent/JP4865130B2/ja not_active Expired - Fee Related
- 2000-02-17 WO PCT/JP2000/000885 patent/WO2000049645A1/ja not_active Ceased
- 2000-02-17 EP EP00903995A patent/EP1091393B1/de not_active Expired - Lifetime
- 2000-10-18 US US09/690,845 patent/US6639316B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1091393A1 (de) | 2001-04-11 |
| CA2328907A1 (en) | 2000-08-24 |
| EP1091393A4 (de) | 2005-03-02 |
| US6639316B1 (en) | 2003-10-28 |
| JP4865130B2 (ja) | 2012-02-01 |
| WO2000049645A1 (fr) | 2000-08-24 |
| EP1091393B1 (de) | 2008-04-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8332 | No legal effect for de |