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DE60019780D1 - Verfahren zur herstellung von czochralski-silizium ohne agglomierte eigenzwischengitteratom-defekte - Google Patents

Verfahren zur herstellung von czochralski-silizium ohne agglomierte eigenzwischengitteratom-defekte

Info

Publication number
DE60019780D1
DE60019780D1 DE60019780T DE60019780T DE60019780D1 DE 60019780 D1 DE60019780 D1 DE 60019780D1 DE 60019780 T DE60019780 T DE 60019780T DE 60019780 T DE60019780 T DE 60019780T DE 60019780 D1 DE60019780 D1 DE 60019780D1
Authority
DE
Germany
Prior art keywords
gitteratomy
agglomered
defects
production
czochralski silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60019780T
Other languages
English (en)
Other versions
DE60019780T2 (de
Inventor
Stagno Luciano Mule
Jeffrey L Libbert
Joseph C Holzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE60019780D1 publication Critical patent/DE60019780D1/de
Application granted granted Critical
Publication of DE60019780T2 publication Critical patent/DE60019780T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60019780T 1999-09-23 2000-09-18 Verfahren zur herstellung von czochralski-silizium ohne agglomerierte eigenzwischengitteratom-defekte Expired - Lifetime DE60019780T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15572599P 1999-09-23 1999-09-23
US155725P 1999-09-23
US17547800P 2000-01-11 2000-01-11
US175478P 2000-01-11
PCT/US2000/025524 WO2001021865A1 (en) 1999-09-23 2000-09-18 Method for producing czochralski silicon free of agglomerated self-interstitial defects

Publications (2)

Publication Number Publication Date
DE60019780D1 true DE60019780D1 (de) 2005-06-02
DE60019780T2 DE60019780T2 (de) 2005-10-06

Family

ID=26852564

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60019780T Expired - Lifetime DE60019780T2 (de) 1999-09-23 2000-09-18 Verfahren zur herstellung von czochralski-silizium ohne agglomerierte eigenzwischengitteratom-defekte

Country Status (7)

Country Link
US (1) US6635587B1 (de)
EP (1) EP1222325B1 (de)
JP (1) JP4360770B2 (de)
KR (1) KR100778194B1 (de)
DE (1) DE60019780T2 (de)
TW (1) TW574449B (de)
WO (1) WO2001021865A1 (de)

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US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6846539B2 (en) 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
WO2004044276A1 (en) * 2002-11-12 2004-05-27 Memc Electronic Materials, Inc. A crystal puller and method for growing a monocrystalline ingot
DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
KR101168655B1 (ko) * 2007-12-28 2012-07-25 삼성코닝정밀소재 주식회사 Ｎ 타입 질화갈륨 웨이퍼의 광학 특성 향상 방법
FR3034108A1 (fr) 2015-03-24 2016-09-30 Soitec Silicon On Insulator Methode de reduction de defauts et fabrication de substrat
ES3041838T3 (en) * 2016-11-14 2025-11-14 Shinetsu Chemical Co Method for manufacturing high-photoelectric-conversion-efficiency solar cell
CN117393588A (zh) * 2023-10-12 2024-01-12 上海新昇半导体科技有限公司 单晶硅晶圆及其形成方法

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FR2460479A1 (fr) * 1979-06-29 1981-01-23 Ibm France Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski
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JP3009078B2 (ja) 1992-01-06 2000-02-14 オムロン株式会社 文字認識装置
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Also Published As

Publication number Publication date
TW574449B (en) 2004-02-01
JP2003510800A (ja) 2003-03-18
KR100778194B1 (ko) 2007-11-27
WO2001021865A1 (en) 2001-03-29
EP1222325A1 (de) 2002-07-17
US6635587B1 (en) 2003-10-21
EP1222325B1 (de) 2005-04-27
JP4360770B2 (ja) 2009-11-11
KR20020042688A (ko) 2002-06-05
DE60019780T2 (de) 2005-10-06

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