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DE3280112D1 - Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium. - Google Patents

Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium.

Info

Publication number
DE3280112D1
DE3280112D1 DE8282106293T DE3280112T DE3280112D1 DE 3280112 D1 DE3280112 D1 DE 3280112D1 DE 8282106293 T DE8282106293 T DE 8282106293T DE 3280112 T DE3280112 T DE 3280112T DE 3280112 D1 DE3280112 D1 DE 3280112D1
Authority
DE
Germany
Prior art keywords
photovoltaic device
amorphous semiconductor
device made
amorphic silicon
amorphic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8282106293T
Other languages
English (en)
Inventor
Hamakawa Yoshihiro
Tawada Yoshihisa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26451701&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3280112(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP56112571A external-priority patent/JPS5814582A/ja
Priority claimed from JP56112572A external-priority patent/JPS5814583A/ja
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Application granted granted Critical
Publication of DE3280112D1 publication Critical patent/DE3280112D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive
DE8282106293T 1981-07-17 1982-07-14 Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium. Expired - Fee Related DE3280112D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56112571A JPS5814582A (ja) 1981-07-17 1981-07-17 高効率のアモルフアスシリコン系太陽電池
JP56112572A JPS5814583A (ja) 1981-07-17 1981-07-17 アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子

Publications (1)

Publication Number Publication Date
DE3280112D1 true DE3280112D1 (de) 1990-03-15

Family

ID=26451701

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8282106293T Expired - Fee Related DE3280112D1 (de) 1981-07-17 1982-07-14 Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium.
DE8888117644T Expired - Fee Related DE3280418T2 (de) 1981-07-17 1982-07-14 Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8888117644T Expired - Fee Related DE3280418T2 (de) 1981-07-17 1982-07-14 Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium.

Country Status (3)

Country Link
US (3) US4450316A (de)
EP (2) EP0309000B1 (de)
DE (2) DE3280112D1 (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0309000B1 (de) * 1981-07-17 1992-10-14 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorpher Halbleiter und photovoltaische Vorrichtung aus amorphem Silizium
JPS58137264A (ja) * 1982-02-09 1983-08-15 Fuji Electric Corp Res & Dev Ltd 光電変換装置
JPS5961077A (ja) * 1982-09-29 1984-04-07 Nippon Denso Co Ltd アモルフアスシリコン太陽電池
US4527006A (en) * 1982-11-24 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US4599482A (en) * 1983-03-07 1986-07-08 Semiconductor Energy Lab. Co., Ltd. Semiconductor photoelectric conversion device and method of making the same
GB2137810B (en) * 1983-03-08 1986-10-22 Agency Ind Science Techn A solar cell of amorphous silicon
JPS6068663A (ja) * 1983-09-26 1985-04-19 Komatsu Denshi Kinzoku Kk アモルフアスシリコン太陽電池
JPS6174638A (ja) * 1984-09-19 1986-04-16 Agency Of Ind Science & Technol 機能性有機・無機複合非晶質材料及びその製造方法
US4738729A (en) * 1984-10-19 1988-04-19 Toshihiko Yoshida Amorphous silicon semiconductor solar cell
DE3527363A1 (de) * 1985-05-17 1986-11-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur herstellung einer raeumlich periodischen halbleiter-schichtenfolge
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
US4843439A (en) * 1985-08-28 1989-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
JPS62198169A (ja) * 1986-02-25 1987-09-01 Fuji Electric Corp Res & Dev Ltd 太陽電池
JPH07101598B2 (ja) * 1986-06-27 1995-11-01 株式会社日立製作所 撮像管
US4711857A (en) * 1986-08-28 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
EP0283699B1 (de) * 1987-03-23 1994-06-15 Hitachi, Ltd. Photoelektrische Umwandlungsanordnung
JP2616929B2 (ja) * 1987-08-22 1997-06-04 株式会社日本自動車部品総合研究所 微結晶炭化ケイ素半導体膜の製造方法
JP2692091B2 (ja) * 1987-10-31 1997-12-17 株式会社日本自動車部品総合研究所 炭化ケイ素半導体膜およびその製造方法
FR2631346B1 (fr) * 1988-05-11 1994-05-20 Air Liquide Revetement protecteur multicouche pour substrat, procede de protection de substrat par depot par plasma d'un tel revetement, revetements obtenus et leurs applications
US5130775A (en) * 1988-11-16 1992-07-14 Yamatake-Honeywell Co., Ltd. Amorphous photo-detecting element with spatial filter
JPH02210715A (ja) * 1989-02-08 1990-08-22 Nippon Sheet Glass Co Ltd 二層構造を有する透明導電基体
JP2846651B2 (ja) * 1989-03-31 1999-01-13 三洋電機株式会社 光起電力装置
IL95097A0 (en) * 1989-08-23 1991-06-10 Himont Inc Thermoplastic olefin polymer and its preparation
US5078803A (en) * 1989-09-22 1992-01-07 Siemens Solar Industries L.P. Solar cells incorporating transparent electrodes comprising hazy zinc oxide
US4969956A (en) * 1989-12-19 1990-11-13 The United States Of America As Represented By The Secretary Of Commerce Transparent thin film thermocouple
IL96561A0 (en) * 1989-12-28 1991-09-16 Minnesota Mining & Mfg Amorphous silicon sensor
US5155567A (en) * 1990-01-17 1992-10-13 Ricoh Company, Ltd. Amorphous photoconductive material and photosensor employing the photoconductive material
JP3099957B2 (ja) * 1990-01-17 2000-10-16 株式会社リコー 光導電部材
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
JP2944014B2 (ja) * 1993-04-19 1999-08-30 シャープ株式会社 光走査型表示装置
AUPM512194A0 (en) * 1994-04-15 1994-05-12 Chulalongkorn University Amorphous semiconductor photocoupler
EP0898303A3 (de) * 1997-08-22 1999-04-07 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Elektrisch isolierendes Dünnschichtsystem mit definierter elektrischer Restleitfähigkeit
US5935705A (en) * 1997-10-15 1999-08-10 National Science Council Of Republic Of China Crystalline Six Cy Nz with a direct optical band gap of 3.8 eV
US6344608B2 (en) * 1998-06-30 2002-02-05 Canon Kabushiki Kaisha Photovoltaic element
JP3869952B2 (ja) * 1998-09-21 2007-01-17 キヤノン株式会社 光電変換装置とそれを用いたｘ線撮像装置
US20040135209A1 (en) * 2002-02-05 2004-07-15 Tzu-Chiang Hsieh Camera with MOS or CMOS sensor array
US7985919B1 (en) * 2006-08-18 2011-07-26 Nanosolar, Inc. Thermal management for photovoltaic devices
US20080078441A1 (en) * 2006-09-28 2008-04-03 Dmitry Poplavskyy Semiconductor devices and methods from group iv nanoparticle materials
US8203073B2 (en) 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8076571B2 (en) 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en) 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
WO2009062117A1 (en) * 2007-11-09 2009-05-14 Sunpreme, Inc. Low-cost solar cells and methods for their production
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
KR20100021845A (ko) * 2008-08-18 2010-02-26 삼성전자주식회사 적층형 태양 전지
US8022291B2 (en) 2008-10-15 2011-09-20 Guardian Industries Corp. Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
US7951640B2 (en) * 2008-11-07 2011-05-31 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
US8796066B2 (en) * 2008-11-07 2014-08-05 Sunpreme, Inc. Low-cost solar cells and methods for fabricating low cost substrates for solar cells
US8535760B2 (en) * 2009-09-11 2013-09-17 Air Products And Chemicals, Inc. Additives to silane for thin film silicon photovoltaic devices
US8003431B2 (en) * 2009-10-21 2011-08-23 Electronics And Telecommunications Research Institute Method for antireflection treatment of a zinc oxide film and method for manufacturing solar cell using the same
US8348504B2 (en) 2010-05-12 2013-01-08 Wireless Sensor Technologies, Llc Wireless temperature measurement system and methods of making and using same
US20120325305A1 (en) * 2011-06-21 2012-12-27 International Business Machines Corporation Ohmic contact between thin film solar cell and carbon-based transparent electrode
ITMI20111559A1 (it) * 2011-08-30 2013-03-01 St Microelectronics Srl Strato tco di contatto frontale di un pannello solare a film sottile con strato barriera di metallo refrattario e processo di fabbricazione
US9472702B1 (en) 2012-11-19 2016-10-18 Sandia Corporation Photovoltaic cell with nano-patterned substrate

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Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4104084A (en) * 1977-06-06 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cells having integral collector grids
CA1123525A (en) * 1977-10-12 1982-05-11 Stanford R. Ovshinsky High temperature amorphous semiconductor member and method of making same
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device
JPS5529154A (en) * 1978-08-23 1980-03-01 Shunpei Yamazaki Semiconductor device
US4388482A (en) * 1981-01-29 1983-06-14 Yoshihiro Hamakawa High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
JPS57204182A (en) * 1981-06-11 1982-12-14 Matsushita Electric Ind Co Ltd Semiconductor device
EP0309000B1 (de) * 1981-07-17 1992-10-14 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorpher Halbleiter und photovoltaische Vorrichtung aus amorphem Silizium

Also Published As

Publication number Publication date
DE3280418T2 (de) 1993-03-04
EP0070509A2 (de) 1983-01-26
EP0309000A3 (en) 1989-05-31
EP0070509B2 (de) 1993-05-19
EP0070509A3 (en) 1986-08-27
US4491682A (en) 1985-01-01
EP0309000B1 (de) 1992-10-14
US4499331A (en) 1985-02-12
EP0070509B1 (de) 1990-02-07
DE3280418D1 (de) 1992-11-19
US4450316A (en) 1984-05-22
EP0309000A2 (de) 1989-03-29

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Legal Events

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8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8339 Ceased/non-payment of the annual fee