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DE2704339A1 - Silicon discs for solar cells - with improved structure produced by heat-treatment and ultrasonic irradiation - Google Patents

Silicon discs for solar cells - with improved structure produced by heat-treatment and ultrasonic irradiation

Info

Publication number
DE2704339A1
DE2704339A1 DE19772704339 DE2704339A DE2704339A1 DE 2704339 A1 DE2704339 A1 DE 2704339A1 DE 19772704339 DE19772704339 DE 19772704339 DE 2704339 A DE2704339 A DE 2704339A DE 2704339 A1 DE2704339 A1 DE 2704339A1
Authority
DE
Germany
Prior art keywords
silicon
treatment
rolled
solar cells
sounders
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19772704339
Other languages
German (de)
Inventor
Wolfgang Dr Rer Nat Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19772704339 priority Critical patent/DE2704339A1/en
Publication of DE2704339A1 publication Critical patent/DE2704339A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)

Abstract

Discs of Si esp. for use as solar cells are made by melting polycrystalline Si, rolling to the required thickness and subjecting the strip, before or after cutting into discs, to ultrasonic vibrations with a frequency greater than 10kHz (10kHz-10MHz) and to simultaneous heat treatment at 1300-1400 degrees C for 30-180 mins in an inert gas atmosphere. The source of the ultra-sonic vibrations is either a cooled magnetostrictive transducer or a piezo-electric transducer. The crystal size of rolled Si strip is thus increased.

Description

Verfahren zum Herstellen von scheibenförmigen Siliciumkörpern,Process for the production of disk-shaped silicon bodies,

insbesondere für Solarzellen.especially for solar cells.

Die Hauptanmeldung betrifft ein Verfahren zum Herstellen von scheibenförmigen Siliciumkörpern, wie sie insbesondere für Solarzellen verwendet werden, bei dem zunächst polykristallines Silicium aufgeschmolzen und durch Walzen in die Form eines die gewünschte Dicke der scheibenförmigen Siliciumkörper aufweisenden Bandes zum Erstarren gebracht und dann dieses Band entsprechend den gewünschten Abmessungen der Siliciumkörper zerteilt wird.The main application relates to a method for producing disk-shaped Silicon bodies, as they are used in particular for solar cells, in the First polycrystalline silicon melted and rolled into the shape of a the desired thickness of the disk-shaped silicon body having tape for Brought to solidify and then this tape according to the desired dimensions the silicon body is broken up.

Bei dem in der Hauptanmeldung beschriebenen Verfahren entstehen Siliciumbänder bzw. -scheiben, welche beztiglich ihrer Kristallstruktur eine nur mäßige Kristallperfektion aufweisen. Um die in den gewalzten Siliciumkörpern auftretenden Kristallstrukturen auszuheilen bzw. zu regenerieren, ist in der DT-PS 1.155.916 bereits vorgeschlagen worden, diese Körper einem Temperprozeß bei hohen Temperaturen (größer 11000C) auszusetzen. Dadurch wird eine Verbesserung der Kristallperfektion erreicht und es werden damit höhere Wirkungsgrade bei den aus diesen Bändern gefertigten Bauelementen erzielt.In the process described in the main application, silicon strips are produced or disks, which have only moderate crystal perfection in terms of their crystal structure exhibit. About the crystal structures occurring in the rolled silicon bodies to heal or regenerate is already proposed in DT-PS 1.155.916 been to subject these bodies to a tempering process at high temperatures (greater than 11000C). As a result, an improvement in the crystal perfection is achieved and thus there will be Achieved higher efficiencies in the components made from these tapes.

Die Aufgabe, die der Erfindung zugrundeliegt, besteht in einer weiteren Verbesserung der Kristallperfektion in Richtung Kornvergrößerung von durch Walzen hergestellten Siliciumbändern.The object on which the invention is based consists in a further one Improvement of crystal perfection in the direction of grain enlargement by rolling manufactured silicon ribbons.

Diese Aufgabe wird dadurch gelöst, daß der gewalzte Siliciumkörper vor oder nach der Zerteilung einer Behandlung mit kurzwelligen Ultraschallschwingungen bei gleichzeitiger Wärmeeinwirkung ausgesetzt wird.This object is achieved in that the rolled silicon body before or after a treatment with short-wave ultrasonic vibrations exposed to heat at the same time.

Die Erfindung geht dabei von der Erkenntnis aus, daß die durch das Walzen im Kristallinneren entstandenen sehr zahlreichen kleinen Gitterverbände durch die intensive Beschallung und die gleichzeitig zugeführte Wärme wieder zusammengeschüttelt und dadurch eine Kornvergrößerung herbeigeführt wird.The invention is based on the knowledge that the Rolling through the inside of the crystal resulted in very numerous small lattice associations the intense sonication and the simultaneously supplied heat shaken together again and thereby a grain enlargement is brought about.

Es liegt im Rahmen der Erfindung, daß die Schallschwingungen mittels elektromechanischer Schallgeber mit einer Frequenz von mehr als 10 kHz erzeugt und auf das gewalzte Siliciumband übertragen werden. Dabei können als Schallgeber sowohl magnetostriktive als auch piezoelektrische Schallgeber verwendet werden.It is within the scope of the invention that the sound vibrations by means of electromechanical sound generator with a frequency of more than 10 kHz generated and are transferred to the rolled silicon ribbon. Both can be used as a sounder Magnetostrictive as well as piezoelectric sounders can be used.

Der Frequenzbereich der Schallschwingungen wird im Bereich von 10 kHz bis 10 MHz (10 - 1000 W/cm2) gewählt.The frequency range of the sound vibrations is in the range of 10 kHz to 10 MHz (10 - 1000 W / cm2) selected.

In einer Weiterbildung des Erfindungsgedankens ist vorgesehen, das gewalzte Siliciumband während der Schalleinwirkung auf einer Temperatur im Bereich von 1300 - 140000 (Schmelzpunkt Silicium 14300C) zu halten. Dabei wird die Temperatur mittels Widerstandsbeheizung unter Schutzgas der Aufnahmeplatte fQr das Siliciumband erzeugt.In a further development of the inventive concept it is provided that rolled silicon strip during exposure to the sound at a temperature in the range from 1300 - 140000 (melting point silicon 14300C). This is the temperature by means of resistance heating under protective gas of the receiving plate for the silicon strip generated.

Weitere Einzelheiten sind aus der an Hand eines AusfUhrungsbeispiels erklärten Figur der Zeichnung zu entnehmen.Further details can be found on the basis of an exemplary embodiment explained figure can be found in the drawing.

Uber den Ultraschallgeber 1 werden über einen aus Silicium bestehenden Ultraschalleiter 2, dessen oberes Ende als Auflagefläche 3 für ein ca. 10 cm breites, durch Walzen hergestelltes Siliciumband 4 ausgebildet ist, Ultraschallschwingungen mit einer Frequenz von 50 kHz übertragen, so daß pro cm2 Siliciumfläche eine Leistung von 20 W entsteht. Der Transport des Siliciumbandes 4 erfolgt in Pfeilrichtung 5. Durch einen Siliciumblock 6 wird das Siliciumband 4 mit dem Ultraschallgeber 1 in Kontakt gebracht. Das obere Ende des die Schallechwingungen übertragenden Siliciumleiters 2 mit der Bandauflage 3 wird von einem Widerstandsofen 7 umgeben, der dafür sorgt, daß eine Temperatur von ca. 14000C während der Beschallungszeit (im Mittel eine Stunde) aufrechterhalten wird. Während der Behandlung wird über das Siliciumband 4 ein Schutzgasstrom, vorzugsweise aus Argon bestehend, geleitet.About the ultrasonic transducer 1 are made of silicon Ultrasonic conductor 2, the upper end of which serves as a support surface 3 for an approx. 10 cm wide, silicon ribbon 4 manufactured by rolling is formed, ultrasonic vibrations transmitted at a frequency of 50 kHz, so that a power per cm2 of silicon area of 20 W. The silicon strip 4 is transported in the direction of arrow 5. Through a Silicon block 6 is the silicon strip 4 with the ultrasonic transducer 1 brought into contact. The upper end of the silicon conductor that transmits the acoustic vibrations 2 with the tape support 3 is surrounded by a resistance furnace 7, which ensures that a temperature of approx. 14000C during the sonication time (on average a Hour) is maintained. During the treatment, the silicon tape is used 4 a flow of protective gas, preferably consisting of argon, passed.

Das Verfahren nach der Lehre der Erfindung ist besonders gut geeignet für die Herstellung von Solarzellen aus kristallinem Silicium, die z. Zt. noch wegen ihrer Kornstruktur nur ungenügende Energieausbeuten liefern. Das Verfahren ist aber ebenso anwendbar für alle anderen Materialien mit körnigem Kristallgefüge, bei denen eine Kornvergrößerung angestrebt wird.The method according to the teaching of the invention is particularly well suited for the production of solar cells from crystalline silicon, the z. Currently still because of their grain structure only deliver inadequate energy yields. The procedure is though can also be used for all other materials with a granular crystal structure, for which a grain enlargement is sought.

9 Patentansprüche 1 Figur Leerseite9 claims 1 figure Blank page

Claims (9)

Patentans prtiahe Verfahren zum Herstellen von scheibenförmigen Siliciuakörpern, wie sie insbesondere für Solarzellen verwendet werden, bei dem zunächst polykristallines Silicium aufgeschmolzen und durch Walzen in die Form eines die gewünschte Dicke der scheibenförmigen Siliciumkörper aufweisenden Bandes zum Erstarren gebracht wird und dann dieses Band entsprechend den gewünschten Abmessungen der Siliciumkörper zerteilt wird, nach Patent (DT-OS 25.08.369 = VPA 75 P 1021), d a -d u r c h g e k e n n z e i c h n e t , daß der gewalzte Siliciumkörper vor oder nach der Zerteilung einer Behandlung mit kurzwelligen Ultraschallschwingungen bei gleichzeitiger Wärmeeinwirkung ausgesetzt wird.Patent to prtiahe process for the production of disk-shaped silicon bodies, as they are used in particular for solar cells, initially polycrystalline Silicon is melted and rolled into the shape of a desired thickness the disk-shaped silicon body having tape is made to solidify and then this tape according to the desired dimensions of the silicon bodies is divided, according to patent (DT-OS 25.08.369 = VPA 75 P 1021), d a -d u r c h g e it is not noted that the rolled silicon body before or after the division a treatment with short-wave ultrasonic vibrations with simultaneous exposure to heat is exposed. 2.) Verfahren nach Anspruch 1, d a dur c h g eke n n -z e i c h n e t , daß die Schallschwingungen mittels elektromechanischer Schallgeber mit einer Frequenz von mehr als 10 kHz erzeugt und auf das gewalzte Siliciumband übertragen werden.2.) The method according to claim 1, d a dur c h g eke n n -z e i c h n e t that the sound vibrations by means of electromechanical sounders with a Frequency of more than 10 kHz generated and transferred to the rolled silicon strip will. 3.) Verfahren nach Anspruch 2, d a d u r c h ge k e n n -z e i c h n e t , daß die Frequenz der Schallschwingungen im Bereich von 10 kHz bis 10 MEz gewählt wird.3.) The method according to claim 2, d a d u r c h ge k e n n -z e i c h n e t that the frequency of the sound vibrations in the range from 10 kHz to 10 MEz is chosen. 4.) Verfahren nach Anspruch 1 bis 3, d a d u r c h g e k e n n -z e i c h n e t , daß gekUh1te magnetostriktive Schallgeber verwendet werden.4.) The method according to claim 1 to 3, d a d u r c h g e k e n n -z It is clear that cooled magnetostrictive sounders are used. 5.) Verfahren nach Anspruch 1 bis 3, d a d u r c h g e k e n n -z e i c h n e t , daß piezoelektrische Schallgeber verwendet werden.5.) The method according to claim 1 to 3, d a d u r c h g e k e n n -z e i c h e t that piezoelectric sounders are used. 6.) Verfahren nach Anspruch 1 bis 5, d a d u r c h g e K e n n -z e i c h n e t , daß das gewalzte Siliciumband während der Schalleinwirkung auf einer Temperatur im Bereich von 1300 bis 14000C gehalten wird.6.) The method according to claim 1 to 5, d a d u r c h g e K e n n -z e i c h n e t that the rolled silicon strip during the sound action on a Temperature is kept in the range of 1300 to 14000C. 7.) Verfahren nach Anspruch 1 bis 6, d a d u r c h g e k e n n -z e i c h n e t , daß die Temperatur mittels Widerstandsbeheizung erzeugt wird.7.) The method according to claim 1 to 6, d a d u r c h g e k e n n -z e i c h n e t that the temperature is generated by means of resistance heating. 8.) Verfahren nach Anspruch 1 bis 7, d a d u r c h g e k e n n -z e i c h n e t , daß die Behandlungsdauer auf 30 bis 180 Min.8.) The method according to claim 1 to 7, d a d u r c h g e k e n n -z e i c h n e t that the treatment duration is limited to 30 to 180 min. eingestellt wird. is set. 9.) Verfahren nach Anspruch 1 bis 8, d a d u r c h g e k e n n -z e i c h n e t , daß während der Behandlung ein Schutzgasstrom über das Siliciumband geleitet wird.9.) The method according to claim 1 to 8, d a d u r c h g e k e n n -z E i c h n e t that a protective gas flow over the silicon strip during the treatment is directed.
DE19772704339 1977-02-02 1977-02-02 Silicon discs for solar cells - with improved structure produced by heat-treatment and ultrasonic irradiation Withdrawn DE2704339A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19772704339 DE2704339A1 (en) 1977-02-02 1977-02-02 Silicon discs for solar cells - with improved structure produced by heat-treatment and ultrasonic irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772704339 DE2704339A1 (en) 1977-02-02 1977-02-02 Silicon discs for solar cells - with improved structure produced by heat-treatment and ultrasonic irradiation

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DE2704339A1 true DE2704339A1 (en) 1978-08-03

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017831A1 (en) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München METHOD FOR THE PRODUCTION OF PLATE OR RIBBON-SHAPED SILICON CRYSTAL BODIES WITH A COLUMNAR STRUCTURE OF SEALED COLUMN STRUCTURE BY SINTERING
US5254481A (en) * 1990-11-20 1993-10-19 Canon Kabushiki Kaisha Polycrystalline solar cell manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NICHTS-ERMITTELT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017831A1 (en) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München METHOD FOR THE PRODUCTION OF PLATE OR RIBBON-SHAPED SILICON CRYSTAL BODIES WITH A COLUMNAR STRUCTURE OF SEALED COLUMN STRUCTURE BY SINTERING
US5254481A (en) * 1990-11-20 1993-10-19 Canon Kabushiki Kaisha Polycrystalline solar cell manufacturing method

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