DE19932444C1 - Production of a texture layer made of an oxide material on a substrate comprises partially fading out sputter ions that are scattered back from the sputtering target so that the larger part - Google Patents

Abstract

Production of a texture layer made of an oxide material on a substrate (9) comprises sputtering a target. During coating, a stream of gas ions are directed onto the substrate at a predetermined angle. Sputter ions (11) that are scattered back from the sputtering target (7) are partially faded out so that the larger part of the back-scattered ions hit the edge region of the surface of the substrate.

Description

The invention relates to a method of manufacture a textured layer of an oxidic material a substrate by sputtering off a corresponding sput tertargets by sputtering ions, whereby during the coating a gas ion beam at an angle the substrate is directed at a predetermined angle. Such a method is e.g. B. the publication "Phy sica C ", Vols. 185 to 189, 1991, pages 1959 to 1960 remove. The invention further relates to a particular Ver using this procedure.

The above-mentioned method is used in particular in the manufacture of layers of superconducting metal oxide compounds with a high transition temperature T _c of over 77 K. Among these compounds, also known as high-T _c superconductor materials or HTS materials, which in particular permit liquid nitrogen (LN ₂ ) cooling technology, there are cuprates based on special material systems such as that of the base type (RE) -M- Cu-O, the component RE containing at least one rare earth metal (rare earth) including Y and the component M containing at least one alkaline earth metal. The main representative of this type is the material YBa ₂ Cu ₃ O _x (so-called "YBCO"). Furthermore, rare earth-free cuprates with five or more components are known as HTS materials. A corresponding basic type is Bi- (M1, M2) -Cu-O, the components M1 and M2 being alkaline earth metals. The main representatives of this type are Bi ₂ Sr ₂ Ca ₁ Cu ₂ O _y or (Bi, Pb) ₂ Sr ₂ Ca ₂ Cu ₃ O _z (so-called "BSCCO" or "B (P) SCCO").

These known HTS materials are tried in various ways NEN substrates for different applications  divorce, generally with a view to high Current carrying capacity after phase-pure, textured Superconductor material is sought. Under a texturing let the alignment of the crystallites correspond to one understood polycrystalline structure. For example should have correspondingly large, insulating substrates for Current limiter applications are coated (see e.g. EP 0 829 101 B1).

With such a superconductor structure in general the HTS material is not immediately deposited on the substrate divide, but this substrate is first with minde least a thin intermediate layer, which also serves as a buffer layer (so-called buffer layer) is referred to covers. This intermediate layer with a thickness in general in the nanometer to micrometer order of magnitude base atoms from the substrate material into the HTS Prevent material from deteriorating to avoid superconducting properties. At the same time can with such a serving as a diffusion barrier Zwi layer smoothed the surface of the substrate and the Adhesion of the HTS material can be improved. Appropriate Interlayers consist in particular of oxides of metal len such as B. of zirconium, cerium, yttrium, aluminum, strontium or magnesium or from corresponding mixed oxides of these Me talle and are therefore usually electrically insulating.

In addition to the property as a diffusion barrier, this min at least an intermediate layer beyond the requirement fill that they have a textured growth of on top of it bringing HTS material. Consequently, the Zwi layer itself have a corresponding texture. The corresponding transfer of the crystallographic orientation when a layer grows on a chemically different one Document is known under the term "heteroepitaxy". There the intermediate layer must match the lattice constants of the HTS  Dimensions of their unit that are as well matched as possible own cells.

Similar requirements apply to the selection of the system To put "substrate intermediate layer". Here are good ones too Strive for adhesive properties, while at the same time the desired Heteroepitaxy between the intermediate layer and the one on it growing HTS layer must not be impaired. In addition, the intermediate layer should be thermal Have expansion coefficients that with that of the substrate materials at least largely matches, all the more so desired mechanical stresses for the applications of Superconductivity technology and layer preparation indispensable Temperature cycles and possibly related damage to avoid chipping.

For the reasons mentioned above, in the method to be gathered from the literature mentioned at the beginning, a thin intermediate layer made of an oxidic material such as with Y-stabilized ZrO ₂ (so-called "YSZ") is placed on a metallic substrate (here made of a special Ni alloy). intended. In order to ensure the required texture in the intermediate layer, a beam of Ga sions such as z. B. Ar ions directed obliquely at a predetermined angle on the substrate. Such a coating process supported by an ion beam is also referred to as an IBAD (Ion Beam Assisted Deposition) method (cf., for example, "Journ. Appl. Phys.", Vol. 51, No. 1, Jan. 1984, pages 235 to 242, or Vol. 71, No. 5, March 1992, pages 2380 to 2386). It is known that corresponding IBAD processes are particularly suitable for enabling the required texture of such oxidic intermediate layers on different types of substrates (cf., for example, "J. Mater. Res.", Vol. 12, No. 3, March 1997, pages 593 to 595). The HTS material is then deposited on substrates provided with such intermediate layers, whereby known PVD processes such as sputtering, laser ablation, electron beam evaporation, thermal evaporation, in particular from several evaporation sources, or CVD processes can be used.

It turns out, however, that especially with large Be layers applied according to the aforementioned method layers relatively inhomogeneous with respect to their lattice are order and consequently applied to such layers HTS layers have a corresponding inhomogeneous current carrying capacity speed or critical current density.

Corresponding problems also exist for HTS layers, which according to the "J. Mater. Res. "Known IBAD method on rotating cylindrical Substrate areas were applied. In this known ver drive hit sputtered target particles from the HTS Material together with an additional ion beam each on a section of the cylindrical substrate surface on. This section is characterized by a window-like, limited opening defined by two blanking screens. This However, opening is in the circumferential direction of the tubular sub seen strates chosen so large that at least a quarter the entire surface of the sputtered target particles be recorded. The one because of the curvature of the surface associated inhomogeneities of the deposition should be caused by the Rotation of the substrate can be compensated. This makes in A very accurate one in terms of epitaxial growth the individual process parameters must be set. The Equipment expenditure is accordingly high.

The object of the present invention is to use the method to design the characteristics mentioned at the beginning, that inhomogeneities with respect to the critical current density with ver relatively little equipment for any sub strat surfaces can be reached.  

This object is achieved in that sputter ions backscattered to the sputtering target with respect to a Impinging on the substrate at least partially so be blinded that at least the majority of the Rückge Scattered sputtering ions at most to an edge area of the coating surface of the substrate. Under the Beg riff "substrate" in this context is the area or Part of a body understood that the required homo improved genetics. With the fade out prevents at least the greater part of the backscattered Sputter ions get on the surface to be coated. there “backscattered” ions are also to be understood as meaning those that have been re-emitted to or from the target.

The invention is based on the knowledge that at the known method the problem arises that a part the sputtering ions are backscattered from the sputtering target. To meet then these corresponding sputter particles with high intensi act on the substrate, so you can grow it there damage the film. That is, these sputter ions have an ent decisive influence on the homogeneity of the manufactured Layers. Then these layers should be used as a base for one further epitaxially growing top layer z. B. from one Serve HTS material, so determines the homogeneity of an ent speaking intermediate layer the quality of the wake up on it send top layer. With the Ausgestal invention advantages of the method are consequently in it to see that because of the at least partial prevention of the Impact of unwanted backscattered sputter ions layers with good texture and homogeneity to the substrate are preserved, especially as a base for the deck layers such as B. from a HTS material with the corresponding Quality can serve.

Advantageous embodiments of the method according to the invention emerge from the dependent claims.  

The at least partial masking of the harmful sput terions can advantageously by a special arrangement or Alignment of the substrate with respect to the sputtering target gen. It was recognized that through a suitable rela tive positioning of sputter ion source, sputter target and To achieve substrate is that the harmful ions under emerge from the sputtering target at a different angle than that sputtered particles of the target material. Appropriate Measures are the reference "J. Mater. Res." not to be removed.

For this reason, it is according to another advantageous one Embodiment of the method according to the invention possible that Blinds to at least partially shield the substra tes with respect to backscattered sputter ions.

The masking effect can advantageously also be achieved in this way that a sputtering target with such surfaces structure is provided that the backscattered sputter ions at most on the edge area of the surface to be coated of the substrate. A suitable surface for this structure advantageously has a sawtooth shape. The idea angle of the sputtering ions on the flanks of this sawtooth Stalt is then chosen so that the harmful sputter ions emerge from the target at an angle such that they are only the Can capture edge areas of the substrate to be coated nen.  

Stalt is then chosen so that the harmful sputter ions emerge from the target at an angle such that they are only the Can capture edge areas of the substrate to be coated nen.

A further reduction in the harmful influence of backscattered sputtering ions to the sputtering target areas of the sub to be coated accessible from them strat area can be advantageous by limiting the energy gy and / or the intensity of this on the substrate hit ions can be achieved. This can be advantageous Substrate are moved. By moving the sub strates can dose the backscattered sputtering ions evenly distributed over the entire substrate. Hereby the intensity of the backscattered sputter ions on the entire substrate homogeneously below a harmful level.

But you can also advantageously other sputtering ions than that Provide commonly used Ar ions. Preferably such ions are provided that lead to a higher yield lead to sputtered ions (so-called "sputter yield"), d. i.e., a larger number of target atoms per sputterion atomize. Xe ions are particularly suitable for this.

In addition, an energy of the sputter ions can advantageously be used provide between 500 and 1500 eV. Because sputter ions with egg comparatively higher energy lead to an increase that of the backscattered sputter ions into the substrate brought energy. The increase in sput that occurs terrate takes place to a lesser extent, so that the ver ratio of backscattered sputterions to sputtered Particles higher, d. H. becomes less favorable.

In addition, an On can be advantageous in the time unit number of electrons are generated that are at least one Factor 2 greater than the number of sputter ions generated is. With a larger number of free electrons is näm  generally the influence of the backscattered sputter ions to reduce the substrate.

It is also advantageous to use a sputtering target instead of an oxi The material of the layer to be trained from only one metallic components of the layer material To provide material. The oxygen required is then at least during the coating process, if necessary even afterwards, through an atmosphere containing oxygen re provided. This has the advantage that the ratio of backscattered sputter ions to zer dusted target atoms smaller, i. H. becomes cheaper because the Sputter yield of a metallic target is generally higher than that of a target from the ent speaking oxides.

The method according to the invention can be particularly advantageous for Deposition of a textured intermediate layer is used the one on which a top layer made of an oxide supralei Term material with a high crack temperature is to be applied. Because such (intermediate) layers produced according to the invention can provide the basis for high-quality cover layers form appropriate HTS materials.

With the method according to the invention, however, poly crystalline or amorphous substrates also other oxidic Layers such as B. from ferroelectric or ferromagneti materials, if made of these materials high crystalline order (texture) is required becomes.

The invention is described below with reference to exemplary embodiments len explained with reference to the figures. Each shows schematically

the Fig. 1 in cross-section the basic design of an apparatus suitable for carrying out the inventive device,

their Fig. 2 and 3, the mutual possibilities Positionierungsmög an ion source, a Sputtertar and gets a substrate within a device Derar term and

gets its FIG. 4, a particular embodiment of a Sputtertar.

Corresponding parts are the same in the figures Provide reference numerals.

To carry out the method according to the invention, the coating device indicated in FIG. 1, generally designated 2, can be used. Corresponding devices are known in principle. According to the illustrated embodiment, the device contains within a lie to earth potential, pumpable and with a gas such as. B. oxygen fillable coating chamber 3 an ion source 4th This source generates a beam 5 of sputter ions 5 a, for example argon ions with an energy preferably between 500 and 1500 eV. In the figure, the intensity distribution in the beam 5 is indicated by a corresponding distribution curve 5 b. The sputter ions meet obliquely on a target 7 made of a predetermined, for example oxidic Targetma material and release there from the surface material particles Chen 8 a or sputter this material. The sputtered target material forms a particle beam 8 partially indicated by dashed lines. The approximately central beam area of maximum intensity is illustrated by an arrowed line S1.

The particle beam 8 is exposed to a target 7 approximately opposite lying substrate 9 . The substrate is attached to a holder, not shown, which can be cooled or heated depending on the required deposition temperatures. The sputtered target material then deposits as a layer 10 on the substrate.

To ensure growth of this layer 10 with a sufficiently good texture in the deposition process, the substrate or the target material already deposited on it is additionally subjected to bombardment by a further beam 12 of gas ions 12 a z. B. from argon with relatively low energy from, for example, 100 to 500 eV. These ions are generated by a special ion source 13 , which is also accommodated in the coating chamber 3 , and have a similar intensity distribution 12 b as in the beam 5 . They hit the substrate surface obliquely at a predetermined angle of incidence. The angle α between the line of maximum intensity of the beam 12 and the substrate surface is generally between 30 and 60 °.

The substrate material can have an amorphous or crystalline structure, which should at least largely unaffected the required texture of the layer 10 . Often the substrate material will be amorphous, as in the case of glasses in particular, or polycrystalline as in the case of ceramics. A glass material can be, for example, a special silicate glass such as a borosilicate or aluminum silicate glass. Glass ceramics are also an option. If a crystalline substrate such. B. from a metallic material to be used, it must be ensured that the crystalline order of the substrate during the deposition in the layer 10 does not compete with the texturing measure with respect to this layer. For example, Ni alloys are suitable as metallic substrate materials. Examples of such alloys are known under the trade names "Hastelloy" or "Inconel". Other metals for sub strates are e.g. B. Cu, Ag, Ta, W and their alloys.

The layer 10 of the deposited target material, the thickness of which is generally between 0.01 and 5 μm, but can also be greater, must have a texture with a crystalline axis perpendicular to the surface of the substrate. That is, it should be oriented crystallographically so that one of its crystal axes points in the direction of the substrate normal. In addition, it can be striven for that the alignment of the remaining two crystal axes in the substrate plane is influenced. A corresponding texture is called biaxial. Ideally, there is also an alignment of the crystal axes in the layer plane, so that an at least almost single-crystalline layer is then present.

In addition to the texturing, the layer 10 can optionally also act as a diffusion barrier in order to prevent diffusion of the material of a possibly further (top) layer deposited thereon into the substrate material and / or vice versa of constituents of the substrate in the top layer .

The selected ion beam sputtering as a coating process represents a process which promotes the texturing of the layer 10. In addition, the required texturing is promoted by the ion beam 12 directed onto the substrate. The energy of the corresponding ions is generally between 100 and 500 eV. Such a coating process is also referred to as an IBAD process.

Suitable layer materials are oxidic materials. These can be pure metal oxides such as MgO, Pr ₆ O ₁₁ , CaO, CeO ₂ , Y ₂ O ₃ or ZrO ₂ . In addition, oxidic compounds such as. B. Titanates, aluminates, gallates or manganates are suitable. Corresponding examples are SrTiO ₃ , BaTiO ₃ , LaAlO ₃ , NdGaO ₃ or La _0.67 Ba _0.33 MnO ₃ . All these mate rialien can be added as a substituent in a manner known per se, so that the aforementioned materials are then to be regarded as base materials for the further elements. A corresponding example would be (Ba, Sr) TiO ₃ . Furthermore, oxidic materials doped with rare earth metals can be deposited. This includes the aforementioned Y-doped ZrO ₂ , the so-called YSZ, which is fully or partially stabilized with the Y. In addition, CeO ₂ doped with Gd is also suitable. Furthermore come with Ce-doped substances such. B. Ce in CaO or in Y ₂ O ₃ in question (cf. "Gmelin Handbook", RE Main Vol. E1, 1992, chap. 1.3.3).

Instead of a single layer 10 , several such layers can of course also be provided. For example, especially in the case of Ni-containing substrates, a double layer of YSZ / CeO _{2 can be} applied.

In Fig. 1 backscattered from the target 7 sputtering ions are indicated and designated 11. These ions form a beam in the form of an intensity distribution similar to that of beam 5 or 12 . The central beam area of maximum intensity of these backscattered ions is illustrated by an arrowed line S2. It also points in the direction of the substrate 9 , but advantageously does not coincide with the beam S1 of the sputtered particles 8 a. However, if backscattered ions hit the part of the substrate 9 to be coated with greater intensity, they can lead to undesirable inhomogeneities in the layer 10 there.

In coating methods using an ion sputter terns there is a risk that the be irradiated by an ion beam body such. B. the target 7 , even if it consists of an oxidic and thus non-conductive material, reaches a higher electrical potential and thus the sputtering is impaired from the target material. For this reason, in a manner known per se, so-called neutralizers are provided in the interior of the coating chamber 3 , with which low-energy electrons are generated with an energy between approximately 10 and 100 eV, which prevent the target from being overcharged. In the figure, two such neutralizers for generating electrons 14 are designated 15a and 15b.

For the reasons mentioned, at least one ion source 4 and / or 13 can optionally also be designed as a plasma source known per se. Such plasma sources not only generate the required gas ions, but also electrons at the same time. In such a case, the neutralizers 15 a and 15 b can then optionally be dispensed with.

In FIGS. 2 to 4 explained below, the individual beams formed in the coating chamber 3 are only indicated by the arrowed line illustrating their central beam area of maximum intensity.

As can be seen from the schematic representation of the beam profiles in FIG. 2, the ions scattered back at the target 7 do not leave the target surface at an angle of incidence corresponding to the angle of incidence β1 as in a real reflection. Rather, these ions are emitted at an angle β3 deviating therefrom, the line S2 of the maximum intensity of the beam generally pointing at least approximately in the normal direction with respect to the target. Line S2 therefore does not coincide with line S1 of the maximum intensity of the sputtered particle stream, since this line includes a larger (exit) angle β2 with the target surface. This fact enables that, according to the inven tion, the backscattered sputtering ions are at least partially hidden from an impact on the substrate 9 fastened to a substrate holder 16 . Hiding is to be understood to mean that the majority of the backscattered sputter ions are kept away from at least the largest part of the surface of the substrate to be coated. In other words, their maximum intensity lies outside this area, so that at most marginal areas of the substrate surface to be coated are hit by backscattered ions in significant numbers.

In order to achieve such a fade-out, a first solution provides for the substrate 7 to be arranged geometrically with respect to the sputtering target in such a way that at least the greater part of the backscattered ions can hit at most an edge region of the surface to be coated. A corresponding possibility is indicated in FIG. 3. This possibility consists in a special mutual positioning of sputter source 13 , sputter target 7 and substrate 9 . According to FIG. 3, allows for this. B. by a different position compared to FIG. 2 Po of the sputtering target 7 . (The parts changed by moving the target into the new position have now been given the reference numerals with a dash). The new position of the target 7 'leads to the fact that the beam of the backscattered sputter ions, illustrated by the line S2', is deflected further away from the substrate surface to be coated, while the beam S1 'of the sputtered particles still hits the substrate surface.

A second solution provides that one arranges at least one aperture in the vicinity of the substrate in the area of the maximum intensity of the backscattered sputter ions. Such an aperture is also never indicated in Fig. 2 by a dashed line Li and designated 17. However, such an aperture can also result in part of the desired particle beam S1 of the sputtered target material being shielded from it from the substrate surface to be coated. Not only in this case, a substrate movement is advantageously provided in such a way that the region that was initially hidden can also be coated. In Fig. 2, this sub strat motion is indicated by a double arrow denoted by b.

According to a further (third) solution, there is the possibility that a sputtering target with such a surface surface structure is provided that the backscattered sputtering ions, as in the case of FIGS . 2 or 3, meet at most edge regions of the substrate surface to be coated and in particular these Do not capture area. This can be achieved in particular by means of a sawtooth structure of the target 7 ″ indicated in FIG. 4. The relative inclination of the tooth flanks then leads to the desired direction of the beam S2 or S2 ′.

Advantageously, one can combine the above-mentioned measures according to the invention, which are indicated in the figures, with further measures which aim at homogenizing and / or weakening the intensity of the non-masked-out rest of the radiation from backscattered ions on the target surface to be coated:

• a) The substrate is be during the coating process moves so that the influence of the backscattered sputts ions spread over the entire substrate. So that can push the intensity locally below a harmful level.
• b) Ar ions other than those normally used can also be used as sputter ions. Such other ions such. B. Xe ions have a higher sputter yield. A correspondingly smaller number of sputter ions is then necessary to generate the same deposition rate. This means that the number of backscattered sputter ions is reduced accordingly. In addition, such Xe ions also have a different backscattering characteristic of their backscattered ions. So z. B. by using such ions, the angle between the lines S1 'and S2' according to FIG. 3 can be enlarged ver.
• c) The energy of the sputter ions also has an influence the amount and energy of the backscattered ions. Out therefore energies of sputterions are with values between 500 and 1500 eV advantageous.
• d) In addition, you can also by a conventional Values increased number of additional electrons in the Be stratification volume a further reduction in pest  cause by backscattered sputtering ions. At such an "over-neutralization" z. B. the übli ratio of approximately 125 electrons to 100 sputter ions to over 200, advantageously over 400 electrons per 100 Io nen increased.
• e) Instead of using a target from the for the separating layer to be provided oxidic material one should also provide a target that only contains the metal contains the component of this material. The oxidic Material is then internalized with an oxygen atmosphere formed half of the coating chamber. Metallic target In principle, materials lead to higher sputtering guess. This enables the sputtering current to be reduced is and thus the intensity of the unwanted Rückge scattered ions is reduced accordingly.

Of course, not just some of the above Measures listed a) to e) with the inventive Measures of the three solutions described are combined. Rather, several of the measures a) to e) apply.

With the method according to the invention, it is generally possible to produce oxide layers on any desired substrates with a high crystalline order. Such layers can be the main purpose of a corresponding structure. Examples here are ferroelectric layers such. B. from SrTiO ₃ or BaTiO ₃ , ferromagnetic layers such. B. from FeO or Fe ₂ O ₃ , piezoelectric layers such. B. BaTiO ₃ or ma gnetoresistive layers such. B. special Mn oxides (see, for example, DE 43 10 318 C2). In addition, the process according to the invention can be used particularly advantageously for forming oxidic intermediate layers on which cover layers made of the known oxidic high-T _c superconductor materials with high crystalline order can grow. Such intermediate layers consist, for example, of YSZ.

A corresponding embodiment is sketched below adorns:

A sputtering beam of 300 mA argon ions with an energy of 1500 eV strikes a 20 × 20 cm target made of YSZ at an angle of 55 °. Opposite is a 10 × 10 cm substrate, as shown in Fig. 3, is arranged. In order to improve the layer quality, the target was shifted in the direction of the sputter source from a mean distance of approx. 19.5 cm to a mean distance of approx. 17 cm, ie the positioning option shown was used. The angles β1, β2 and β3 (corresponding to FIG. 2) were 55 °, 115 ° and 90 ° (each approximate values). A supporting beam of 30 mA argon ions with 300 eV energy strikes the substrate at an angle α of 35 ° and forces biaxially textured growth there. This geometric arrangement is suitable for producing a high-quality YSZ layer of relatively homogeneous quality on the entire substrate. An HTS material such as YBCO with a good texture can be deposited on such a layer.

Claims (18)

1. A method for producing a textured layer of an oxidic material on a substrate by sputtering terns a corresponding sputtering target by sputtering ions, wherein during the coating process a beam of gas ions is additionally directed obliquely onto the substrate at a certain angle, characterized in that from the sputtering target ( 7 , 7 ', 7 ") backscattered sputtering ions ( 11 ) are at least partially masked with respect to impact on the substrate ( 9 ) in such a way that at least the greater part of the backscattering sputtering ions ( 11 ) at most only to an edge region of the be stratified surface of the substrate ( 9 ). 2. The method according to claim 1, characterized in that the substrate ( 9 ) with respect to the sput tertargets ( 7 , 7 ', 7 ") is arranged geometrically so that the at least partial masking takes place. 3. The method according to claim 1 or 2, characterized in that screens ( 17 ) for at least partially shielding the substrate ( 9 ) with respect to the backscattered sputtering ions ( 11 ) are provided. 4. The method according to any one of the preceding claims, characterized in that a sputtering target ( 7 ") is provided with such a surface structure that the backscattered sputtering ions ( 11 ) hit at most an edge region of the surface of the substrate ( 9 ) to be coated. 5. The method according to any one of the preceding claims, characterized by forming a layer ( 10 ) made of a ferroelectric, ferromagnetic or ma gnetoresistive material. 6. The method according to any one of the preceding claims, since characterized in that as a layer material a metal oxide or a titanate or an aluminate or a gallate or a manganate is provided. 7. The method according to claim 6, characterized in that the layer material is selected from the group MgO, ZrO ₂ , Y ₂ O ₃ , CaO, CeO ₂ , Pr ₆ O ₁₁ , SrTiO ₃ , Ba TiO ₃ , LaAlO ₃ , NdGaO ₃ or a material which contains one of the group materials mentioned at least as a main part. 8. The method according to any one of the preceding claims, ge characterized by a layer material from a oxidic material doped with a rare earth metal. 9. The method according to claim 7, characterized by a layer material made from Y-doped ZrO ₂ or from Ce doped with Ca or Y ₂ O ₃ or from Gd-doped CeO ₂ . 10. The method according to any one of the preceding claims, characterized in that the additional beam ( 12 ) of gas ions ( 12 a) is directed at an angle of incidence (α) between 30 and 60 ° onto the substrate ( 9 ). 11. The method according to any one of the preceding claims, characterized by a limitation of the energy and / or the intensity of backscattered from the sputtering target ( 7 , 7 ', 7 "), impinging on the substrate ( 9 ) ions ( 11 ). 12. The method according to any one of the preceding claims, characterized in that the substrate ( 9 ) is moved. 13. The method according to claim 11 or 12, characterized in that other sputter ions ( 5 a) than Ar ions, preferably Xe ions, are provided. 14. The method according to any one of the preceding claims, characterized in that an energy of the sputter ions ( 5 a) between 500 and 1500 eV is provided. 15. The method according to any one of the preceding claims, characterized in that a number of electrons ( 14 ) is generated in the unit of time, which is at least a factor 2 larger than the number of sputter ions ( 5 a) generated. 16. The method according to any one of the preceding claims, characterized in that a plasma source is provided as the ion source ( 4 or 13 ) for generating the sputter ions ( 5 a) and / or the additional gas ions ( 12 a). 17. The method according to any one of the preceding claims, characterized in that a sputtering target ( 7 , 7 ', 7 ") is provided made of a material that only the metallic components of the material of the layer ( 10 ) to be produced on the substrate ( 9 ) ), and that oxygen is made available at least during the coating process. 18. Use of the method according to one of the preceding Claims for the deposition of a textured intermediate layer, on the top layer of an oxide superconductor material with a high crack temperature.