DE19817680A1 - Silicon boronitride ceramic powder is produced - Google Patents
Silicon boronitride ceramic powder is producedInfo
- Publication number
- DE19817680A1 DE19817680A1 DE1998117680 DE19817680A DE19817680A1 DE 19817680 A1 DE19817680 A1 DE 19817680A1 DE 1998117680 DE1998117680 DE 1998117680 DE 19817680 A DE19817680 A DE 19817680A DE 19817680 A1 DE19817680 A1 DE 19817680A1
- Authority
- DE
- Germany
- Prior art keywords
- mixture
- ceramic powder
- polymer
- bis
- chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000843 powder Substances 0.000 title claims abstract description 39
- 239000000919 ceramic Substances 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 7
- 239000010703 silicon Substances 0.000 title abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 63
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229920000642 polymer Polymers 0.000 claims abstract description 26
- 229910003697 SiBN Inorganic materials 0.000 claims abstract description 23
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 22
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 21
- 238000005915 ammonolysis reaction Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 13
- XSCQEJPXSZLZHT-UHFFFAOYSA-N [[[dichloro-(trimethylsilylamino)silyl]amino]-dimethylsilyl]methane Chemical compound C[Si](C)(C)N[Si](Cl)(Cl)N[Si](C)(C)C XSCQEJPXSZLZHT-UHFFFAOYSA-N 0.000 claims abstract description 11
- YFYASMWDAMXQQT-UHFFFAOYSA-N 2-amino-3-chlorobutanoic acid Chemical compound CC(Cl)C(N)C(O)=O YFYASMWDAMXQQT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 238000010992 reflux Methods 0.000 claims abstract description 9
- VWHCRPOEYZPVCP-UHFFFAOYSA-N ClB1N(Cl)BNBN1Cl Chemical compound ClB1N(Cl)BNBN1Cl VWHCRPOEYZPVCP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000001914 filtration Methods 0.000 claims abstract description 8
- PZQPWROECRVJBE-UHFFFAOYSA-N 1-chloro-n,n'-bis(trichlorosilyl)-boranediamine Chemical compound Cl[Si](Cl)(Cl)NB(Cl)N[Si](Cl)(Cl)Cl PZQPWROECRVJBE-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000009835 boiling Methods 0.000 claims abstract description 3
- 238000003825 pressing Methods 0.000 claims abstract description 3
- 229910052582 BN Inorganic materials 0.000 claims description 25
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 20
- 239000000010 aprotic solvent Substances 0.000 claims description 5
- 238000009997 thermal pre-treatment Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000007669 thermal treatment Methods 0.000 claims description 2
- 229920002959 polymer blend Polymers 0.000 claims 1
- MHSVPESLLPEISB-UHFFFAOYSA-N 1,1-dichloro-n-(trichlorosilyl)-boranamine Chemical compound ClB(Cl)N[Si](Cl)(Cl)Cl MHSVPESLLPEISB-UHFFFAOYSA-N 0.000 abstract description 18
- 238000001354 calcination Methods 0.000 abstract description 13
- 239000007789 gas Substances 0.000 abstract description 8
- 238000000465 moulding Methods 0.000 abstract description 2
- VGRSPALDTNRXMC-UHFFFAOYSA-N [B].[N].[Si] Chemical compound [B].[N].[Si] VGRSPALDTNRXMC-UHFFFAOYSA-N 0.000 abstract 1
- NSKYBBGLYMCXST-UHFFFAOYSA-N [[dichlorosilyl(trimethylsilyl)amino]-dimethylsilyl]methane Chemical compound C[Si](C)(C)N([SiH](Cl)Cl)[Si](C)(C)C NSKYBBGLYMCXST-UHFFFAOYSA-N 0.000 abstract 1
- GRKAPUVHODSHCR-UHFFFAOYSA-N dichloroboranyl-bis(trichlorosilyl)amine Chemical compound ClB(Cl)N([Si](Cl)(Cl)Cl)[Si](Cl)(Cl)Cl GRKAPUVHODSHCR-UHFFFAOYSA-N 0.000 abstract 1
- 238000002156 mixing Methods 0.000 abstract 1
- 239000003880 polar aprotic solvent Substances 0.000 abstract 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- 239000007787 solid Substances 0.000 description 11
- 239000000460 chlorine Substances 0.000 description 10
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000197 pyrolysis Methods 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000003208 petroleum Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000011541 reaction mixture Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001709 polysilazane Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- WGPHAAZICQTMQF-UHFFFAOYSA-N ClN1BNBNB1 Chemical class ClN1BNBNB1 WGPHAAZICQTMQF-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000002879 Lewis base Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- IZUYFGSZSHLMFU-UHFFFAOYSA-N [[bis(trimethylsilylamino)silylamino]-dimethylsilyl]methane Chemical compound C[Si](C)(C)N[SiH](N[Si](C)(C)C)N[Si](C)(C)C IZUYFGSZSHLMFU-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- -1 carbon Hydrogen Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000007527 lewis bases Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000009419 refurbishment Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
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- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
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Abstract
Description
Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung eines amorphen Sili
ciumbornitridkeramikpulvers der allgemeinen Formel
The present invention relates to a method for producing an amorphous silicon citric boron nitride ceramic powder of the general formula
SixByNz
Si x B y N z
in welcher
x für die Zahlen 1 bis 15 steht,
y für die Zahlen 3 bis 10 steht und
z für die Zahlen 7 bis 15 steht, mit dem Formkörper hergestellt werden können,
die sich durch hohe Thermobeständigkeit, hohe Oxidationsbeständigkeit, hohe
Formbeständigkeit und niedrigem Kohlenstoffgehalt auszeichnen.in which
x represents the numbers 1 to 15,
y stands for the numbers 3 to 10 and
z stands for the numbers 7 to 15, with which moldings can be produced which are characterized by high thermal resistance, high oxidation resistance, high dimensional stability and low carbon content.
Aus Baldus et al, Mat. Res. Soc. Symp. Proc., Vol. 271(1992) 821-826 ist bekannt, daß diese Pulver üblicherweise zur Herstellung von Si3N4/BN-Kompositkeramiken verwendet werden. Der Vorteil der Verwendung von Siliciumbornitridkeramikpulvern gegenüber konventionellen Pulvermischungen aus Si3N4- und BN-Pulvern liegt in deren besseren Sinteraktivität.From Baldus et al, Mat. Res. Soc. Symp. Proc., Vol. 271 (1992) 821-826 it is known that these powders are usually used for the production of Si 3 N 4 / BN composite ceramics. The advantage of using silicon boron nitride ceramic powders over conventional powder mixtures made of Si 3 N 4 and BN powders lies in their better sintering activity.
Aus DE-A-11 93 485 und US 3 676 343 ist bekannt, daß amorphes Siliciumbornitrid über die Coammonolyse der Elementchloride BCl3 und SiCl4 mit Ammoniak im elek trischen Lichtbogen bzw. durch anschließende Pyrolyse in NH3/N2 hergestellt werden kann.From DE-A-11 93 485 and US 3,676,343 it is known that amorphous silicon boron nitride can be produced via the coammonolysis of the element chlorides BCl 3 and SiCl 4 with ammonia in an electric arc or by subsequent pyrolysis in NH 3 / N 2 .
Nach JP 05 320 356 ist die Synthese auch über die Coammonolyse von Dihalosilanen und Trihaloboranen in Anwesenheit von Lewis-Basen möglich.According to JP 05 320 356, the synthesis is also via the coammonolysis of dihalosilanes and trihaloboranes in the presence of Lewis bases possible.
Ein anderer Zugang zu Siliziumbornitridpulvern (SiBN-Pulvern) ergibt sich nach Misawa et al (J. of Non-Crystalline Solids 95 & 96 (1987) 1119-1126) durch die Um setzung von SiCl4, B2H6 und H2 in Anwesenheit von Ammoniak bei Temperaturen zwischen 1100 und 1300°C (CVD-Verfahren).Another access to silicon boron nitride powders (SiBN powders) results from Misawa et al (J. of Non-Crystalline Solids 95 & 96 (1987) 1119-1126) by the conversion of SiCl 4 , B 2 H 6 and H 2 in Presence of ammonia at temperatures between 1100 and 1300 ° C (CVD process).
Ein alternativer Weg zur Erzeugung der Siliciumbornitridkeramik wird in EP-A- 0 424 082 beschrieben. Hier wird ein lösliches Polysilazan mit einer löslichen bororga nischen Verbindung in einem Lösungsmittel bei moderaten Bedingungen polymerisiert und unter NH3/N2 pyrolysiert.An alternative way of producing the silicon boron nitride ceramic is described in EP-A-0 424 082. Here, a soluble polysilazane is polymerized with a soluble boron compound in a solvent under moderate conditions and pyrolyzed under NH 3 / N 2 .
Sneddon et al (Chem. Mater. 7(11) (1995) 2203-12) führt die Copolymerisation von Tris(trimethylsilylamino)silan (TTS) mit Borazin mit nachgeschalteter Pyrolyse bis 1400°C zu amorphen Si-B-N-Keramiken mit variablem Siliciumgehalt durch Kristalli sation bei 1800°C führt zu teilkristallinen Produkten. Kristalline Phasen sind Si3N4 und SiC, BN liegt amorph vor.Sneddon et al (Chem. Mater. 7 (11) (1995) 2203-12) leads the copolymerization of tris (trimethylsilylamino) silane (TTS) with borazine with subsequent pyrolysis up to 1400 ° C. to amorphous Si-BN ceramics with variable silicon content by crystallization at 1800 ° C leads to semi-crystalline products. Crystalline phases are Si 3 N 4 and SiC, BN is amorphous.
Nach JP 04 272 227 können Chlorborazine mit kettenförmigen bzw. zyklischen Polysilazanen copolymerisiert werden, die dann in Siliciumbornitridkeramiken (Fasern oder Copmposite) durch thermische Behandlung umgewandelt werden.According to JP 04 272 227, chloroborazines with chain or cyclic Copolymerized polysilazanes, which are then in silicon boron nitride ceramics (fibers or copmposite) can be converted by thermal treatment.
Aus EP-A-0 502 399 ist bekannt, daß homogene, amorphe Siliciumbornitridpulver durch Ammonolyse von TADB (Trichlorsilylaminodichlorboran), einem Single- Source-Precursor, mit festem, flüssigem oder gasförmigem Ammoniak und anschlie ßender Calcination und Pyrolyse in NH3/N2 hergestellt werden können.From EP-A-0 502 399 it is known that homogeneous, amorphous silicon boron nitride powder by ammonolysis of TADB (trichlorosilylaminodichloroborane), a single-source precursor, with solid, liquid or gaseous ammonia and subsequent calcination and pyrolysis in NH 3 / N 2 can be produced.
Nachteilig an den Verfahren im Stand der Technik ist, daß hochwertige amorphe Sili ciumbornitridkeramiken nur durch Ammonolyse von aufwendig hergestellten Mono merverbindungen (Single Source Precursoren) oder reinen Si- und B-haltigen Aus gangsstoffen synthetisiert werden können. Als eine weitere Möglichkeit kann die Ver knüpfung der drei Elemente Si, B, und N nur über die Copolymerisation von aufwen dig hergestellten Silazan-Präpolymeren mit niedermolekularen Borausgangsverbin dungen realisiert werden. A disadvantage of the processes in the prior art is that high-quality amorphous sili ciumboron nitride ceramics only by ammonolysis of elaborately manufactured mono mer compounds (single source precursors) or pure Si and B containing Aus materials can be synthesized. As a further possibility, the Ver linking of the three elements Si, B, and N only through the copolymerization of costs dig prepared silazane prepolymers with low molecular weight boron starting compound be realized.
Die Synthesen der Ausgangsverbindungen führen über umwelt- und gesundheitsge fährdende Einsatzstoffe, die eines sensiblen Handlings bedürfen. In den meisten Fällen bleiben Reststoffe zurück, die aufwendig entsorgt werden müssen.The syntheses of the starting compounds lead to environmental and health hazardous feedstocks that require sensitive handling. In most cases there remain residues that have to be disposed of at great expense.
Ein weiterer Nachteil besteht in der Luft- und Hydrolyseempfindlichkeit der herge stellten Precursormoleküle und -polymere sowie der reinen Edukte (z. B. BCl3, SiCl4), deren aufwendigen Herstellungs- und Reinigungsschritten bei ihrer Synthese und den damit verbundenen Edukt- und Hilfsstoffkosten.Another disadvantage is the sensitivity to air and hydrolysis of the manufactured precursor molecules and polymers as well as the pure educts (e.g. BCl 3 , SiCl 4 ), their complex manufacturing and purification steps in their synthesis and the associated educt and auxiliary costs .
Die Aufgabe bestand darin, ein einfaches und zugleich umweltverträgliches Verfahren unter Berücksichtigung wirtschaftlicher Aspekte zur Herstellung eines Siliciumbor nitridkeramikpulvers bereitzustellen, das nicht von Single-Source-Precursoren son dern von einem chlorreichen Polymer ausgeht und welches die Nachteile der Single- Source-Precusoren nicht aufweist. Infolgedessen entfällt die aufwendige Entsorgung eines Abfallstoffes, des TADB-Sumpfes (TADB = Trichlorsilylaminodichlorboran).The task was to create a simple and environmentally friendly process considering economic aspects for the production of a silicon boron Provide nitride ceramic powder that is not used by single source precursors based on a chlorine-rich polymer and which has the disadvantages of single Source precursors does not have. As a result, there is no need for time-consuming disposal a waste, the TADB swamp (TADB = trichlorosilylaminodichloroborane).
Die Erfindung und damit die Lösung der Aufgabe betrifft ein Verfahren zur Herstel
lung eines amorphen Siliciumbornitridkeramikpulvers der allgemeinen Formel
The invention and thus the solution to the problem relates to a method for the produc- tion of an amorphous silicon boron nitride ceramic powder of the general formula
SixByNz
Si x B y N z
in welcher
x für die Zahlen 1 bis 15 steht,
y für die Zahlen 3 bis 10 steht und
z für Zahlen 7 bis 15 steht,
dadurch gekennzeichnet, daß man entweder ein Stoffgemisch mit
20 bis 80 Gew.-% Bis(trichlorsilylamino)-chlorboran (TACB) und
20 bis 80 Gew.-% Bis(trimethylsilylamino)-dichlorsilan
(Stoffgemisch 1) bei mindestens 50°C über eine Zeitdauer von 72 Stunden in ein
Stoffgemisch der Zusammensetzung
50 bis 70 Gew.-% TACB
10 bis 30 Gew.-% Bis(trimethylsilylamino)-dichlorsilan und
15 bis 30 Gew.-% Trichlorborazin
(= Stoffgemisch 2) überführt, dieses Stoffgemisch 2 entweder ohne thermische Vorbe
handlung mit Ammoniak bei Temperaturen zwischen -200°C und +1400°C ammono
lysiert und unter Schutzgas bei Temperaturen zwischen 800°C und 1550°C calciniert,
oder Stoffgemisch 2 gegebenenfalls in einem weiteren Schritt bei Temperaturen grö
ßer oder gleich 70°C
in ein Stoffgemisch der Zusammensetzung
25 bis 40 Gew.-% TACB
2 bis 10 Gew.-% Bis(trimethylsilylamino)-dichlorsilan
2 bis 10 Gew.-% Trichlorborazin und
40 bis 60 Gew.-% chloridhaltiges SiBN-Polymer
(= Stoffgemisch 3) thermisch überführt und dieses Stoffgemisch 3 dann mit Ammo
niak bei Temperaturen zwischen -200°C und +1400°C ammonolysiert und unter
Schutzgas bei Temperaturen zwischen 800°C und 1550°C calciniert, wobei die jewei
lige Summe der Gewichtsprozente stets 100% ergibt.in which
x represents the numbers 1 to 15,
y stands for the numbers 3 to 10 and
z stands for numbers 7 to 15,
characterized in that either with a mixture of substances
20 to 80 wt .-% bis (trichlorosilylamino) chloroborane (TACB) and
20 to 80% by weight bis (trimethylsilylamino) dichlorosilane
(Mixture 1) at least 50 ° C over a period of 72 hours in a mixture of the composition
50 to 70 wt% TACB
10 to 30 wt .-% bis (trimethylsilylamino) dichlorosilane and
15 to 30% by weight trichloroborazine
(= Substance mixture 2) transferred, this substance mixture 2 is either lysed without thermal pretreatment with ammonia at temperatures between -200 ° C and + 1400 ° C and calcined under protective gas at temperatures between 800 ° C and 1550 ° C, or substance mixture 2 if necessary in a further step at temperatures greater than or equal to 70 ° C
in a mixture of substances of the composition
25 to 40 wt% TACB
2 to 10% by weight bis (trimethylsilylamino) dichlorosilane
2 to 10 wt .-% trichloroborazine and
40 to 60 wt .-% chloride-containing SiBN polymer
(= Substance mixture 3) thermally transferred and this substance mixture 3 then ammonolyzed with ammonia at temperatures between -200 ° C and + 1400 ° C and calcined under protective gas at temperatures between 800 ° C and 1550 ° C, the respective sum of the percentages by weight always results in 100%.
Das erfindungsgemäße Verfahren eignet sich besonders zur Herstellung eines amor
phen Siliciumbornitridkeramikpulvers der allgemeinen Formel
The process according to the invention is particularly suitable for producing an amorphous silicon boron nitride ceramic powder of the general formula
SixByNz
Si x B y N z
in welcher
x für die Zahl 3 steht,
y für die Zahlen 8 oder 9 steht und
z für die Zahlen 12 oder 13 steht.in which
x represents the number 3,
y stands for the numbers 8 or 9 and
z stands for the numbers 12 or 13.
Durch das erfindungsgemäße Verfahren können Siliciumbornitridkeramikpulver her gestellt werden, deren BN-Gehalt (B = Bor, N = Stickstoff) zwischen 15 und 47 Gew.-% und deren Si3N4-Gehalt zwischen 53 und 85 Gew.-% einstellbar sind und die darüber hinaus einen niedrigen Kohlenstoffgehalt aufweisen.The process according to the invention can be used to produce silicon boron nitride ceramic powders whose BN content (B = boron, N = nitrogen) can be set between 15 and 47% by weight and whose Si 3 N 4 content can be set between 53 and 85% by weight and which also have a low carbon content.
Gemäß dem erfindungsgemäßen Verfahren kann Stoffgemisch 2 auch direkt, ohne thermische Vorbehandlung, der Ammonolyse und Calcinierung unterzogen werden, ohne daß dem erfindungsgemäßen Verfahren daraus eine Einschränkung erwächst.According to the method according to the invention, substance mixture 2 can also be used directly, without thermal pretreatment which is subjected to ammonolysis and calcination, without the method according to the invention being restricted thereby.
Bevorzugt im Sinne der vorliegenden Erfindung zur Herstellung des amorphen Silici umbornitridkeramikpulvers ist die Verwendung von Stoffgemisch 3, das aus Stoff gemisch 2 wie oben beschrieben hergestellt werden kann. Die Ammonolyse und Calcinierung von Stoffgemisch 3 erfolgt analog zu der von Stoffgemisch 2.Preferred in the sense of the present invention for the production of the amorphous silicon umbornitride ceramic powder is the use of substance mixture 3, that of substance mixture 2 can be prepared as described above. Ammonolysis and Calcination of mixture 3 is carried out analogously to that of mixture 2.
Die Dauer der Pyrolyse beträgt zwischen 0 Minuten und 24 Stunden, bevorzugt zwi schen 15 Minuten und 12 Stunden.The duration of the pyrolysis is between 0 minutes and 24 hours, preferably between 15 minutes and 12 hours.
Der Druck der Atmosphäre beträgt zwischen 0,9 und 1,5 bar.The pressure of the atmosphere is between 0.9 and 1.5 bar.
Die Dauer der Calcination beträgt zwischen 0 Minuten und 24 Stunden, bevorzugt zwischen 15 Minuten und 12 Stunden. Die Calcination kann auch direkt nach der Pyrolyse ohne intermediäres Abkühlen erfolgen.The duration of the calcination is between 0 minutes and 24 hours, preferably between 15 minutes and 12 hours. The calcination can also be done directly after the Pyrolysis take place without intermediate cooling.
Der Druck der Atmosphäre beträgt zwischen 0,9 und 1,5 bar.The pressure of the atmosphere is between 0.9 and 1.5 bar.
Gemäß dem erfindungsgemäßen Verfahren können die erhaltenen amorphen Silicium bornitridkeramikpulver durch eine anschließende Temperaturbehandlung zwischen 1500°C und 2200°C teilweise oder vollständig kristallisiert werden. Als röntgeno graphisch nachweisbare kristalline Phasen bilden sich in erster Linie α- und β-Silici umnitrid. Die Bildung von hexagonalem BN ist kinetisch gehemmt und findet nur bei höheren Temperaturen und längeren Haltezeiten statt. Daneben kann die Bildung von SiC beobachtet werden. Während der Kristallisation erhöht sich die Dichte der Silici umbornitridkeramikpulver und die spezifische Oberfläche reduziert sich.According to the method according to the invention, the amorphous silicon obtained can boron nitride ceramic powder by a subsequent heat treatment between 1500 ° C and 2200 ° C are partially or completely crystallized. As x-ray Graphically detectable crystalline phases primarily form α and β silici umnitride. The formation of hexagonal BN is kinetically inhibited and only occurs in higher temperatures and longer holding times. In addition, the formation of SiC can be observed. The density of the silicon increases during the crystallization umborn nitride ceramic powder and the specific surface is reduced.
Die Kristallisation wird unter Schutzgas bzw. Inertgas wie N2 und/oder Argon durch geführt.The crystallization is carried out under protective gas or inert gas such as N 2 and / or argon.
Der Druck der Atmosphäre beträgt zwischen 0,9 bar und 100 bar, bevorzugt 1 bar bis 10 bar.The pressure of the atmosphere is between 0.9 bar and 100 bar, preferably 1 bar to 10 bar.
Die Zeitdauer der Auslagerung beträgt zwischen 5 Minuten und 4 Tagen, bevorzugt 10 Minuten bis 24 Stunden.The duration of the aging is between 5 minutes and 4 days, preferably 10 minutes to 24 hours.
Die Kristallisation der Siliciumbornitridkeramikpulver kann auch direkt nach der Calcination ohne intermediäres Abkühlen erfolgen.The crystallization of the silicon boron nitride ceramic powder can also be carried out directly after the Calcination done without intermediate cooling.
Besonders bevorzugt im Sinne der vorliegenden Erfindung ist die Verwendung des TADB-Sumpfes als Ausgangsstoffgemisch zur Herstellung des erfindungsgemäßen Keramikpulvers anstelle von Stoffgemisch 1 und/oder Stoffgemisch 2 und/oder Stoff gemisch 3.For the purposes of the present invention, particular preference is given to using the TADB sump as a starting material mixture for the preparation of the invention Ceramic powder instead of mixture 1 and / or mixture 2 and / or substance mix 3.
Der TADB-Sumpf fällt bei der Herstellung des genannten Single-Source-Precursors TADB (Trichlorsilylaminodichlorboran) als ein Reststoff an, der im Normalfall auf wendig entsorgt werden müßte.The TADB swamp falls during the manufacture of the single source precursor mentioned TADB (trichlorosilylaminodichloroborane) as a residue that normally occurs on would have to be disposed of quickly.
Durch Ammonolyse des Rohsumpfes oder des aufgereinigten Sumpfes mit Ammoniak (fest, flüssig, gasförmig) bei Temperaturen zwischen 800°C und 1400°C und an schließende Pyrolyse und Calcinierung bis maximal 1550°C kann das amorphe Silici umbornitridkeramikpulver im Sinne der vorliegenden Erfindung hergestellt werden. By ammonolysis of the raw sump or the purified sump with ammonia (solid, liquid, gaseous) at temperatures between 800 ° C and 1400 ° C and on closing pyrolysis and calcination up to a maximum of 1550 ° C can be done by amorphous silici umbornitride ceramic powder can be produced in the sense of the present invention.
Die Reinigung des TADB-Sumpfes erfolgt erfindungsgemäß dadurch, daß das Sumpf gemisch mit einem inerten, unpolaren, aprotischen Lösungsmittel oder Lösungsmittel gemisch versetzt wird. Bevorzugt werden Kohlenwasserstoffe wie Pentan und Hexan eingesetzt, besonders bevorzugt Petrolether.The TADB sump is cleaned according to the invention in that the sump mixture with an inert, non-polar, aprotic solvent or solvent is mixed. Hydrocarbons such as pentane and hexane are preferred used, particularly preferably petroleum ether.
Der dabei ausgefällte polymere Feststoff erfindungsgemäß chloridhaltiges SiBN-Poly mer, fallt in 11-70%iger Ausbeute an (bezogen auf eingesetztes Sumpfgemisch).The precipitated polymeric solid, according to the invention, containing chloride-containing SiBN poly mer, is obtained in 11-70% yield (based on the sump mixture used).
Je nach Anwendung kann das ausgefällte SiBN-Polymer abfiltriert und getrocknet oder in ausgefällter Form weiterverwendet werden.Depending on the application, the precipitated SiBN polymer can be filtered off and dried or continue to be used in a precipitated form.
Durch Ammonolyse des chloridhaltigen SiBN-Polymers, auch in Kombination mit Stoffgemisch 1 und/oder Stoffgemisch 2 und/oder Stoffgemisch 3, und anschließende Pyrolyse und Calcinierung bis maximal 1550°C kann das erfindungsgemäße amorphe Siliciumbornitridpulver hergestellt werden, das einen BN-Gehalt zwischen 15 und 47% und einen Si3N4-Gehalt zwischen 53 und 85% aufweist. Kristallisation führt zu teilkristallinem Siliciumbornitridpulver.The amorphous silicon boron nitride powder according to the invention can be produced by ammonolysis of the chloride-containing SiBN polymer, also in combination with substance mixture 1 and / or substance mixture 2 and / or substance mixture 3 and subsequent pyrolysis and calcination, which has a BN content between 15 and 47% and an Si 3 N 4 content between 53 and 85%. Crystallization leads to semi-crystalline silicon boron nitride powder.
In einer besonders bevorzugten Ausführungsform im Sinne der vorliegenden Erfin dung wird das TADB-Sumpfgemisch bei einer Temperatur zwischen 78°C und 110°C, bevorzugt zwischen 88° und 100°C, für die Dauer von 2 Stunden bis 4 Tagen unter Rückfluß gehalten. Danach werden die Leichtsieder abdestilliert und das zurückblei bende Produkt mit einem inerten, unpolaren, aprotischen Lösungsmittel wie Kohlen wasserstoffe, besonders bevorzugt mit Petrolether, versetzt.In a particularly preferred embodiment in the sense of the present invention the TADB swamp mixture at a temperature between 78 ° C and 110 ° C, preferably between 88 ° and 100 ° C, for a period of 2 hours to 4 days below Kept reflux. The low boilers are then distilled off and the residue is left behind product with an inert, non-polar, aprotic solvent such as carbon Hydrogen, particularly preferably with petroleum ether.
Erfindungsgemäß entsteht dann das chloridhaltige SiBN-Polymer zur Herstellung des Keramikpulvers in 90%iger Ausbeute.According to the invention, the chloride-containing SiBN polymer is then produced to produce the Ceramic powder in 90% yield.
Wenn das chloridhaltige SiBN-Polymer in ausgefällter Form weiter umgesetzt oder einer anderen Anwendung zugeführt werden soll, kann auf das Isolieren des Produk tes verzichtet werden. If the chloride-containing SiBN polymer is reacted further in the precipitated form or another application can be used to isolate the product tes can be dispensed with.
Der bevorzugte Aufarbeitungsschritt besteht in der Isolierung des ausgefällten chloridhaltigen SiBN-Polymers durch Filtration und dessen Umsetzung mit Ammo niak (fest, flüssig, gasförmig) bei Temperaturen zwischen -200°C und +1400°C. Die anschließende Calcination bei Temperaturen zwischen 800°C und 1550°C führt zu dem amorphen Siliciumbornitridpulver im Sinne der vorliegenden Erfindung. Kristalli sation führt zu teilkristallinem Siliciumbornitridpulver.The preferred work-up step is to isolate the precipitated chloride-containing SiBN polymer by filtration and its reaction with Ammo niak (solid, liquid, gaseous) at temperatures between -200 ° C and + 1400 ° C. The subsequent calcination at temperatures between 800 ° C and 1550 ° C leads to the amorphous silicon boron nitride powder in the sense of the present invention. Crystalline sation leads to partially crystalline silicon boron nitride powder.
Für die Reaktion mit NH3 kann man alle literaturbekannten Ammonolyseverfahren von Siliciumtetrachlorid nutzen; das betrifft die Umsetzung mit festem bzw. flüssigem Ammoniak bei tiefen Temperaturen (US-A-4 196 178), die Reaktion mit gasförmigem Ammoniak in einem organischen Lösungsmittel (US-A-4 959 446) oder die Umse tzung mit NH3 in einer Hochtemperaturreaktion unter Abspaltung von Chlorwasser stoff (US-A-4 145 224).For the reaction with NH 3 , all known ammonolysis processes of silicon tetrachloride can be used; this relates to the reaction with solid or liquid ammonia at low temperatures (US-A-4 196 178), the reaction with gaseous ammonia in an organic solvent (US-A-4 959 446) or the reaction with NH 3 in one High temperature reaction with elimination of hydrogen chloride (US-A-4 145 224).
Die Abtrennung des anfallenden Ammoniumchlorids geschieht erfindungsgemäß durch bekannte Methoden wie Sublimation oder Waschen mit flüssigem Ammoniak. Besonders bevorzugt wird das Salz im Ammoniakstrom durch Pyrolyse des ammono lysierten Produkts in einem Ofen zwischen 400 und 1000°C entfernt. Anschließend wird das Material in einem Stickstoffstrom zwischen 800°C und 1550°C, besonders bevorzugt aber bei 1500°C zur amorphen nitridischen Keramik calciniert. Wie oben beschrieben führt Kristallisation zu teilkristallinem Produkt.The ammonium chloride obtained is separated off in accordance with the invention by known methods such as sublimation or washing with liquid ammonia. The salt in the ammonia stream is particularly preferred by pyrolysis of the ammono lysed product removed in an oven between 400 and 1000 ° C. Subsequently the material becomes special in a nitrogen stream between 800 ° C and 1550 ° C but preferably calcined at 1500 ° C to amorphous nitridic ceramics. As above Crystallization leads to partially crystalline product.
Das auf diese Weise dargestellte amorphe keramische Material besteht in den Haupt komponenten aus Si, N und B und kann in Spuren auch C, Cl, H und O enthalten.The amorphous ceramic material represented in this way consists in the main components made of Si, N and B and can also contain C, Cl, H and O in traces.
Bevorzugt sind Spuren von Kohlenstoff mit einer Obergrenze von 1,5 Gew.-%, insbe sondere bevorzugt sind Spuren von Kohlenstoff kleiner oder gleich 0,25 Gew.-%.Traces of carbon with an upper limit of 1.5% by weight are preferred, in particular traces of carbon of less than or equal to 0.25% by weight are particularly preferred.
Die Calcinierung wird unter Schutzgas durchgeführt. Besonders geeignet als Schutz gas sind Stickstoff, Argon und/oder Ammoniak. The calcination is carried out under protective gas. Particularly suitable as protection gas are nitrogen, argon and / or ammonia.
Das erfindungsgemäße Verfahren wird durch die folgenden Beispiele verdeutlicht, ohne jedoch auf diese eingeschränkt zu sein.The process according to the invention is illustrated by the following examples, without being limited to them.
Die nach dem erfindungsgemäßen Verfahren hergestellten Siliciumbornitridkeramik pulver zeichnen sich durch hohe Thermobeständigkeit sowie hohe Oxidationsempfind lichkeit aus. Formkörper, die aus dem Siliziumkeramikpulver durch Verpressen herge stellt werden, weisen zudem hohe Formbeständigkeit, Bruchfestigkeit sowie Schlag zähigkeit auf.The silicon boron nitride ceramic produced by the method according to the invention powders are characterized by high thermal resistance and high sensitivity to oxidation out. Shaped body made of the silicon ceramic powder by pressing have high dimensional stability, breaking strength and impact toughness.
Alle Arbeiten wurden in Schutzgasatmosphäre (N2 oder Argon) unter Verwendung der Schlenktechnik durchgeführt.All work was carried out in a protective gas atmosphere (N 2 or argon) using Schlenk technology.
In einem 3000 ml-Dreihalskolben werden 500 ml flüssiges Ammoniak (99.999%) einkondensiert und 1100 ml Petrolether hinzugegeben. Anschließend tropft man unter starkem Rühren langsam (1 Tropfen pro Sekunde) 180 g von Stoffgemisch 1 und/oder Stoffgemisch 2 bei einer Temperatur von -78°C hinzu. Danach rührt man die Suspension aus polymerem Ammonolyseprodukt, NH4Cl, flüssigem Ammoniak und Petrolether noch ca. eine Stunde und läßt das überschüssige Ammoniak abdampfen. Es wird noch eine Stunde zum Rückflußsieden erhitzt, um Reste von Ammoniak aus dem Reaktionsgemisch zu entfernen. Nach der Filtration und Trocknung im Vakuum bleibt ein weißer, salzhaltiger, polymerer Feststoff zurück.500 ml of liquid ammonia (99.999%) are condensed in a 3000 ml three-necked flask and 1100 ml of petroleum ether are added. 180 g of mixture 1 and / or mixture 2 are then slowly added dropwise (1 drop per second) at a temperature of -78 ° C. with vigorous stirring. Then the suspension of polymeric ammonolysis product, NH 4 Cl, liquid ammonia and petroleum ether is stirred for another hour and the excess ammonia is allowed to evaporate. The mixture is heated under reflux for one hour to remove residual ammonia from the reaction mixture. After filtration and drying in vacuo, a white, saline, polymeric solid remains.
In einem 2000 ml-Dreihalskolben werden 100 g von Stoffgemisch 3 und/oder TADB- Sumpf in 1000 ml Hexan vorgelegt. Anschließend wird Ammoniak (99.999%) bei -78°C bis zur Sättigung eingeleitet. Die Reaktionsmischung wird innerhalb von 48 h auf Raumtemperatur erwärmt und eine Stunde zum Rückflußsieden erhitzt. Der ent standene weiße polymere Feststoff wird abfiltriert und im Vakuum getrocknet. 100 g of substance mixture 3 and / or TADB- are placed in a 2000 ml three-necked flask. Submitted to the sump in 1000 ml of hexane. Then ammonia (99.999%) is added -78 ° C initiated to saturation. The reaction mixture is within 48 h warmed to room temperature and heated to reflux for one hour. The ent standing white polymeric solid is filtered off and dried in vacuo.
In einem Dreihalskolben werden 1000 g TADB-Rohsumpf vorgelegt. Unter starkem
Rühren wird der Sumpf mit einer Menge Petrolether bei Raumtemperatur versetzt, die
sich zur eingewogenen Menge Sumpf wie 1 : 1 bis 1 : 10 verhalten kann. Das ausge
fällte, stark chloridhaltige SiBN-Polymer wird durch Filtration isoliert und unter Va
kuum getrocknet. Es kann auch direkt aus der Fäll-Lösung weiter umgesetzt werden.
Ausbeute: 11-70%
Zusammensetzung (in Gewichtsprozent):
C 2.3%; Cl 45.5%; N 25.8%; O 1.5; B 12.7%; Si 11.4%1000 g of TADB raw sump are placed in a three-necked flask. With vigorous stirring, the amount of petroleum ether is added to the sump at room temperature, which can be 1: 1 to 1:10 to the amount of sump weighed in. The precipitated, high chloride SiBN polymer is isolated by filtration and dried under vacuum. It can also be implemented directly from the precipitation solution.
Yield: 11-70%
Composition (in percent by weight):
C 2.3%; Cl 45.5%; N 25.8%; O 1.5; B 12.7%; Si 11.4%
In einem 2000 ml Dreihalskolben werden 1000 g TADB-Rohsumpf vorgelegt und
zum Sieden unter Rückfluß erhitzt. Das Gemisch wird für die Dauer von 2 Stunden
bis 4 Tagen auf einer Temperatur zwischen 78°C und 110°C gehalten. Im Laufe des
Rückflußsieden nimmt die Viskosität des Kolbeninhaltes stark zu. Die Leichtsieder
werden abdestilliert und der verbleibende zähflüssige, cremefarbene Rückstand mit
einer entsprechenden Menge Petrolether versetzt. Das ausgefällte, weiße, chloridhal
tige SiBN-Polymer wird durch Filtration isoliert und unter Vakuum getrocknet.
Ausbeute: < 90%
Zusammensetzung (in Gewichtsprozent):
C 2.97%; H 1.85%, N 18.8%; O 0.66%; Cl 53.9%; B 9.77% Si 12.7%
1000 g of TADB raw sump are placed in a 2000 ml three-necked flask and heated to boiling under reflux. The mixture is kept at a temperature between 78 ° C and 110 ° C for a period of 2 hours to 4 days. The viscosity of the contents of the flask increases sharply in the course of the reflux. The low boilers are distilled off and the remaining viscous, cream-colored residue is mixed with an appropriate amount of petroleum ether. The precipitated, white, chloride-containing SiBN polymer is isolated by filtration and dried under vacuum.
Yield: <90%
Composition (in percent by weight):
C 2.97%; H 1.85%, N 18.8%; O 0.66%; Cl 53.9%; B 9.77% Si 12.7%
In einem 1000 ml Dreihalskolben werden 300 g des chloridhaltigen SiBN-Polymers eingewogen. Die Zugabe eines inerten, unpolaren, aprotischen Lösungsmittels oder Lösungsmittelgeinisches kann in beliebigem Verhältnis erfolgen oder unterbleiben. Der Kolben wird auf -78°C abgekühlt und die Einleitung von NH3 (99.999%) unter starkem Rühren begonnen. Nach 5 Stunden wird das Einleiten beendet. Das über schüssige Ammoniak wird abgedampft und der zurückbleibende weiße Feststoff im Vakuum von restlichem Ammoniak befreit.300 g of the chloride-containing SiBN polymer are weighed into a 1000 ml three-necked flask. An inert, non-polar, aprotic solvent or solvent mixture can be added in any ratio or not. The flask is cooled to -78 ° C and the introduction of NH 3 (99.999%) started with vigorous stirring. The introduction is ended after 5 hours. The excess ammonia is evaporated and the remaining white solid is freed from residual ammonia in vacuo.
In einem 2000 ml-Dreihalskolben werden 500 ml Ammoniak (99.999%) und 1100 ml Hexan bei -78°C vorgelegt. Unter starkem Rühren werden dann 150 g des chlorid haltigen SiBN-Polymers über einen Feststoffdosiertrichter langsam zudosiert. Die Reaktionsmischung wird über einen Zeitraum von 24 h auf Raumtemperatur erwärmt und noch eine Stunde zum Rückflußsieden erhitzt. Der weiße Feststoff wird abfiltriert und im Vakuum getrocknet.500 ml of ammonia (99.999%) and 1100 ml are placed in a 2000 ml three-necked flask Hexane submitted at -78 ° C. 150 g of the chloride are then stirred vigorously containing SiBN polymer slowly metered in via a solids metering funnel. The The reaction mixture is warmed to room temperature over a period of 24 h and heated to reflux for an hour. The white solid is filtered off and dried in vacuo.
Das gemäß der Beispiele 1, 2, 5 und 6 erhaltene polymere Ammonolyseprodukt wird in einer Quarzglasfritte im Ammoniakstrom auf 1000°C erhitzt und bei dieser Tempe ratur eine Stunde getempert, um noch vorhandenes NH4Cl auszutreiben. Anschlie ßend wird das Material im Kohlenstofftiegel unter Stickstoff auf 1500°C (10 K/min) aufgeheizt und dort eine weitere Stunde calciniert. The polymeric ammonolysis product obtained according to Examples 1, 2, 5 and 6 is heated in a quartz glass frit in an ammonia stream to 1000 ° C. and tempered at this temperature for one hour in order to drive off any NH 4 Cl still present. The material is then heated in a carbon crucible under nitrogen to 1500 ° C. (10 K / min) and calcined there for a further hour.
Das polymere Ammonolyseprodukt hat sich vollständig zu einer nitridischen Keramik umgewandelt, die röntgenamorph ist. Die Oberfläche wurde mittels BET bestimmt.The polymeric ammonolysis product has completely become a nitridic ceramic converted, which is X-ray amorphous. The surface was determined using BET.
Oberfläche: 304 m2 Area: 304 m 2
/g
Zusammensetzung (in Gewichtsprozent):
Si 37.2%; B 14.5%; O 1.5%; N 45.9%; C 0.1%; Cl < 0.01%/G
Composition (in percent by weight):
Si 37.2%; B 14.5%; O 1.5%; N 45.9%; C 0.1%; Cl <0.01%
Oberfläche: 141 m2 Area: 141 m 2
/g
Zusammensetzung (in Gewichtsprozent):
Si 36.3%; B 16.2%; O 1.7%; N 44.5%; C 0.2%; Cl < 0.01%/G
Composition (in percent by weight):
Si 36.3%; B 16.2%; O 1.7%; N 44.5%; C 0.2%; Cl <0.01%
Oberfläche: 56 m2 Area: 56 m 2
/g
Zusammensetzung (in Gewichtsprozent):
Si 24.5%; B 28.0%; O 0.7%; N 45.6%; C 0.06%; Cl < 0.01%/G
Composition (in percent by weight):
Si 24.5%; B 28.0%; O 0.7%; N 45.6%; C 0.06%; Cl <0.01%
Oberfläche: 6 m2 Area: 6 m 2
/g
Zusammensetzung (in Gewichtsprozent):
Si 25.3%; B 25.8%; O 1.2%; N 47.2%; C 0.1%; Cl < 0.01%/G
Composition (in percent by weight):
Si 25.3%; B 25.8%; O 1.2%; N 47.2%; C 0.1%; Cl <0.01%
Claims (7)
SixByNz
in welcher
x für die Zahlen 1 bis 15 steht,
y für die Zahlen 3 bis 10 steht und
z für die Zahlen 7 bis 15 steht,
dadurch gekennzeichnet, daß man entweder ein Stoffgemisch 1 mit
20 bis 80 Gew.-% Bis(trichlorsilylamino)-chlorboran und
20 bis 80 Gew.-% Bis(trimethylsilylamino)-dichlorsilan
bei mindestens 50°C über eine Zeitdauer von 72 Stunden in ein Stoffgemisch 2 der Zusammensetzung
50 bis 70 Gew.-% TACB
10 bis 30 Gew.-% Bis(trimethylsilylamino)-dichlorsilan und
15 bis 30 Gew.-% Trichlorborazin
überführt, dieses Stoffgemisch 2 entweder ohne thermische Vorbehandlung mit Ammoniak bei Temperaturen zwischen -200°C und +1400°C ammonoly siert und unter Schutzgas bei Temperaturen zwischen 800°C und 1550°C, calciniert, oder Stoffgemisch 2 gegebenenfalls in einem weiteren Schritt bei Temperaturen größer oder gleich 70°C
in ein Stoffgemisch 3 der Zusammensetzung
25 bis 40 Gew.-% TACB
2 bis 10 Gew.-% Bis(trimethylsilylamino)-dichlorsilan
2 bis 10 Gew.-% Trichlorborazin und
40 bis 60 Gew.-% chloridhaltiges SiBN-Polymer
thermisch überführt und dieses dann mit Ammoniak bei Temperaturen zwi schen -200°C und +1400°C ammonolysiert und unter Schutzgas bei Tempera turen zwischen 800°C und 1550°C zu einem amorphen Siliciumbornitrid keramikpulver calciniert.1. A process for producing a silicon boron nitride ceramic powder of the general formula
Si x B y N z
in which
x represents the numbers 1 to 15,
y stands for the numbers 3 to 10 and
z represents the numbers 7 to 15,
characterized in that either a mixture 1 with
20 to 80 wt .-% bis (trichlorosilylamino) chloroborane and
20 to 80% by weight bis (trimethylsilylamino) dichlorosilane
at least 50 ° C over a period of 72 hours in a mixture 2 of the composition
50 to 70 wt% TACB
10 to 30 wt .-% bis (trimethylsilylamino) dichlorosilane and
15 to 30% by weight trichloroborazine
transferred, this mixture of substances 2 ammonoly siert without thermal pretreatment with ammonia at temperatures between -200 ° C and + 1400 ° C and calcined under protective gas at temperatures between 800 ° C and 1550 ° C, or mixture of substances 2 if necessary in a further step Temperatures greater than or equal to 70 ° C
in a mixture of substances 3 of the composition
25 to 40 wt% TACB
2 to 10% by weight bis (trimethylsilylamino) dichlorosilane
2 to 10 wt .-% trichloroborazine and
40 to 60 wt .-% chloride-containing SiBN polymer
thermally transferred and then ammonolyzed with ammonia at temperatures between -200 ° C and + 1400 ° C and calcined under protective gas at temperatures between 800 ° C and 1550 ° C to an amorphous silicon boron nitride ceramic powder.
x für die Zahl 3 steht,
y für die Zahlen 8 oder 9 steht und
z für die Zahlen 12 oder 13 steht.2. A method for producing a silicon boron nitride ceramic powder of the general formula Si x B y N z according to claim 1, characterized in that
x represents the number 3,
y stands for the numbers 8 or 9 and
z stands for the numbers 12 or 13.
50 bis 70 Gew.-% TACB
10 bis 30 Gew.-% Bis(trimethylsilylamino)-dichlorsilan und
15 bis 30 Gew.-% Trichlorborazin
(Stoffgemisch 2) ausgegangen wird. 3. A process for producing a silicon boron nitride ceramic powder of the general formula Si x B y N z according to claim 1, characterized in that a mixture of substances of the composition
50 to 70 wt% TACB
10 to 30 wt .-% bis (trimethylsilylamino) dichlorosilane and
15 to 30% by weight trichloroborazine
(Mixture 2) is assumed.
25 bis 40 Gew.-% TACB
2 bis 10 Gew.-% Bis(trimethylsilylamino)-dichlorsilan
2 bis 10 Gew.-% Trichlorborazin und
40 bis 60 Gew.-% chloridhaltiges SiBN-Polymer
(Stoffgemisch 3) ausgegangen wird.4. A method for producing a silicon boron nitride ceramic powder of the general formula Si x B y N z according to claim 1, characterized in that a mixture of substances of the composition
25 to 40 wt% TACB
2 to 10% by weight bis (trimethylsilylamino) dichlorosilane
2 to 10 wt .-% trichloroborazine and
40 to 60 wt .-% chloride-containing SiBN polymer
(Mixture 3) is assumed.
x für die Zahlen 1 bis 15 steht,
y für die Zahlen 3 bis 10 steht und
z für die Zahlen 7 bis 15 steht,
dadurch gekennzeichnet, daß man TADB-Sumpfgemisch bei einer Temperatur zwischen 78°C und 110°C für die Dauer von 2 Stunden bis 4 Tagen unter Rückfluß hält, danach die Leichtsieder abdestilliert, das zurückbleibende Pro dukt mit einem inerten, unpolaren, aprotischen Lösungsmittel versetzt, das ausgefällte chloridhaltige SiBN-Polymer durch Filtration isoliert, mit Ammo niak bei Temperaturen zwischen -200°C und 1400°C umsetzt und schließlich bei Temperaturen zwischen 800°C und 1550°C zu einem amorphen Silicium bornitridkeramikpulver calciniert.5. A process for producing a silicon boron nitride ceramic powder of the general formula Si x B y N z , in which
x represents the numbers 1 to 15,
y stands for the numbers 3 to 10 and
z represents the numbers 7 to 15,
characterized in that TADB bottom mixture is kept at a temperature between 78 ° C and 110 ° C for a period of 2 hours to 4 days under reflux, then the low boilers are distilled off, the remaining product is mixed with an inert, non-polar, aprotic solvent , the precipitated chloride-containing SiBN polymer isolated by filtration, reacted with ammonia at temperatures between -200 ° C and 1400 ° C and finally calcined at temperatures between 800 ° C and 1550 ° C to an amorphous silicon boron nitride ceramic powder.
- i) thermische Behandlung von TADB-Sumpfgemisch bei einer Tempera tur zwischen 78°C und 110°C für die Dauer von 2 Stunden bis 4 Tagen unter Rückflußsieden,
- ii) abdestillieren der leichtsiedenden Anteile,
- iii) versetzen des Rückstands mit einem inerten, unpolaren, aprotischen Lösungsmittel und
- iv) trocknen des durch Filtration isolierten chloridhaltigen SiBN-Polymers im Vakuum.
- i) thermal treatment of TADB bottom mixture at a temperature between 78 ° C and 110 ° C for a period of 2 hours to 4 days under reflux,
- ii) distilling off the low-boiling fractions,
- iii) adding an inert, non-polar, aprotic solvent to the residue and
- iv) drying the chloride-containing SiBN polymer isolated by filtration in vacuo.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1998117680 DE19817680A1 (en) | 1998-04-21 | 1998-04-21 | Silicon boronitride ceramic powder is produced |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1998117680 DE19817680A1 (en) | 1998-04-21 | 1998-04-21 | Silicon boronitride ceramic powder is produced |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19817680A1 true DE19817680A1 (en) | 1999-10-28 |
Family
ID=7865250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1998117680 Withdrawn DE19817680A1 (en) | 1998-04-21 | 1998-04-21 | Silicon boronitride ceramic powder is produced |
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| Country | Link |
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| DE (1) | DE19817680A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002022522A3 (en) * | 2000-09-14 | 2002-07-18 | Max Planck Gesellschaft | Silicon-boron-carbon-nitrogen ceramics and precursor compounds, methods for the production and use thereof |
| WO2004002886A1 (en) * | 2002-06-28 | 2004-01-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Integrated, continuous method for the production of molecular single-component precursors having a nitrogen bridging function |
| US7297649B2 (en) | 2001-09-14 | 2007-11-20 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Silicoboroncarbonitride ceramics and precursor compounds, method for the production and use thereof |
| CN102604108A (en) * | 2012-03-15 | 2012-07-25 | 中国科学院化学研究所 | Organic silicon binding agent and special silicon-boron-carbon-nitrogen polymer thereof |
| CN114621448A (en) * | 2022-02-17 | 2022-06-14 | 中国科学院宁波材料技术与工程研究所 | Preparation method of silicon nitride precursor |
| CN116178013A (en) * | 2023-01-12 | 2023-05-30 | 宁波杭州湾新材料研究院 | A preparation method of SiBN ceramic precursor with controllable silicon-boron atomic ratio |
-
1998
- 1998-04-21 DE DE1998117680 patent/DE19817680A1/en not_active Withdrawn
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002022522A3 (en) * | 2000-09-14 | 2002-07-18 | Max Planck Gesellschaft | Silicon-boron-carbon-nitrogen ceramics and precursor compounds, methods for the production and use thereof |
| US7795461B2 (en) | 2000-09-14 | 2010-09-14 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Silicon-boron-carbon-nitrogen ceramics and precursor compounds, methods for the production and use thereof |
| US8242298B2 (en) | 2000-09-14 | 2012-08-14 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Silicon-boron-carbon-nitrogen ceramics and precursor compounds, method for the production and use thereof |
| US7297649B2 (en) | 2001-09-14 | 2007-11-20 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Silicoboroncarbonitride ceramics and precursor compounds, method for the production and use thereof |
| WO2004002886A1 (en) * | 2002-06-28 | 2004-01-08 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Integrated, continuous method for the production of molecular single-component precursors having a nitrogen bridging function |
| US7683197B2 (en) | 2002-06-28 | 2010-03-23 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Ev | Integrated, continuous method for the production of molecular single-component percursors having a nitrogen bridging function |
| CN102604108A (en) * | 2012-03-15 | 2012-07-25 | 中国科学院化学研究所 | Organic silicon binding agent and special silicon-boron-carbon-nitrogen polymer thereof |
| CN102604108B (en) * | 2012-03-15 | 2013-11-06 | 中国科学院化学研究所 | Organic silicon binding agent and special silicon-boron-carbon-nitrogen polymer thereof |
| CN114621448A (en) * | 2022-02-17 | 2022-06-14 | 中国科学院宁波材料技术与工程研究所 | Preparation method of silicon nitride precursor |
| CN114621448B (en) * | 2022-02-17 | 2023-08-15 | 中国科学院宁波材料技术与工程研究所 | A kind of preparation method of silicon nitride precursor |
| CN116178013A (en) * | 2023-01-12 | 2023-05-30 | 宁波杭州湾新材料研究院 | A preparation method of SiBN ceramic precursor with controllable silicon-boron atomic ratio |
| CN116178013B (en) * | 2023-01-12 | 2024-01-30 | 宁波杭州湾新材料研究院 | Preparation method of SiBN ceramic precursor with controllable silicon to boron atomic ratio |
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