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DE19781966T1 - Vorrichtung zum Ziehen von Einkristallen - Google Patents

Vorrichtung zum Ziehen von Einkristallen

Info

Publication number
DE19781966T1
DE19781966T1 DE19781966T DE19781966T DE19781966T1 DE 19781966 T1 DE19781966 T1 DE 19781966T1 DE 19781966 T DE19781966 T DE 19781966T DE 19781966 T DE19781966 T DE 19781966T DE 19781966 T1 DE19781966 T1 DE 19781966T1
Authority
DE
Germany
Prior art keywords
single crystals
pulling single
pulling
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19781966T
Other languages
English (en)
Other versions
DE19781966B4 (de
Inventor
Kiyofumi Nishiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Sitix Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8232910A external-priority patent/JP2990658B2/ja
Priority claimed from JP8236361A external-priority patent/JP2990659B2/ja
Priority claimed from JP8236654A external-priority patent/JP2990660B2/ja
Application filed by Sumitomo Sitix Corp filed Critical Sumitomo Sitix Corp
Publication of DE19781966T1 publication Critical patent/DE19781966T1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19781966T 1996-09-03 1997-08-29 Vorrichtung zum Ziehen von Einkristallen Pending DE19781966T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8232910A JP2990658B2 (ja) 1996-09-03 1996-09-03 単結晶引上装置
JP8236361A JP2990659B2 (ja) 1996-09-06 1996-09-06 単結晶引上装置
JP8236654A JP2990660B2 (ja) 1996-09-06 1996-09-06 単結晶引上装置
PCT/JP1997/003042 WO1998010125A1 (en) 1996-09-03 1997-08-29 Single crystal pulling apparatus

Publications (1)

Publication Number Publication Date
DE19781966T1 true DE19781966T1 (de) 1999-07-15

Family

ID=27331938

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19781966T Pending DE19781966T1 (de) 1996-09-03 1997-08-29 Vorrichtung zum Ziehen von Einkristallen

Country Status (4)

Country Link
US (1) US6139633A (de)
KR (1) KR100310780B1 (de)
DE (1) DE19781966T1 (de)
WO (1) WO1998010125A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4052753B2 (ja) * 1999-02-24 2008-02-27 株式会社スーパーシリコン研究所 単結晶成長装置及び単結晶成長方法
DE19939715B4 (de) * 1999-08-21 2008-07-24 Crystal Growing Systems Gmbh Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer
JP3573021B2 (ja) * 1999-09-29 2004-10-06 三菱住友シリコン株式会社 結晶保持装置
RU2162903C1 (ru) * 1999-12-09 2001-02-10 Федеральное государственное унитарное предприятие Государственный научно-исследовательский и проектный институт редкометаллической промышленности Устройство для выращивания монокристаллов кремния
JP4689027B2 (ja) * 2000-10-23 2011-05-25 株式会社Sumco 半導体単結晶引上装置
DE10111953A1 (de) * 2001-03-12 2002-09-19 Crystal Growing Systems Gmbh Steuerbare Kristallunterstützung
DE102006034433B4 (de) * 2006-07-26 2018-03-22 Crystal Growing Systems Gmbh Kristallziehanlage, Unterstützungsvorrichtung und Verfahren zur Her-stellung von schweren Kristallen
US9580832B2 (en) * 2013-10-25 2017-02-28 Siemens Medical Solutions Usa, Inc. Pulling head having a magnetic drive
CN105063744A (zh) * 2015-07-15 2015-11-18 包头市山晟新能源有限责任公司 硅单晶拉制方法
CN105887184A (zh) * 2016-05-10 2016-08-24 河南鸿昌电子有限公司 半导体晶棒熔炼拉晶装置和熔炼拉晶的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215050A (ja) * 1985-07-09 1987-01-23 Fuji Seiki Seizosho:Kk リ−ドフレ−ムの受取り装置
JPH0656648B2 (ja) * 1989-06-01 1994-07-27 株式会社三協精機製作所 リファレンス信号検出方式
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
JPH07103000B2 (ja) * 1990-03-30 1995-11-08 信越半導体株式会社 結晶引上装置
JPH07515B2 (ja) * 1990-04-11 1995-01-11 信越半導体株式会社 結晶引上装置
JP3005910B2 (ja) 1990-12-19 2000-02-07 カシオ計算機株式会社 データ処理装置
JPH0772116B2 (ja) * 1991-02-15 1995-08-02 信越半導体株式会社 単結晶引上装置
JP2946934B2 (ja) * 1992-03-19 1999-09-13 三菱マテリアル株式会社 単結晶引上装置
JP2946933B2 (ja) * 1992-03-19 1999-09-13 三菱マテリアル株式会社 単結晶引上装置
JPH05301793A (ja) * 1992-04-27 1993-11-16 Mitsubishi Materials Corp 単結晶引上装置
JPH07172981A (ja) * 1993-12-14 1995-07-11 Komatsu Electron Metals Co Ltd 半導体単結晶の製造装置および製造方法
JP2956568B2 (ja) * 1996-01-25 1999-10-04 住友金属工業株式会社 単結晶引上げ装置
JP2973916B2 (ja) * 1996-03-15 1999-11-08 住友金属工業株式会社 種結晶保持具及び該種結晶保持具を用いた単結晶の引き上げ方法
JP3718921B2 (ja) * 1996-09-18 2005-11-24 信越半導体株式会社 単結晶保持方法および単結晶成長方法
JP3598681B2 (ja) * 1996-09-26 2004-12-08 信越半導体株式会社 単結晶の引上げ方法及び装置
JPH10120487A (ja) * 1996-10-15 1998-05-12 Komatsu Electron Metals Co Ltd 単結晶引上装置および引上方法
US5885347A (en) * 1997-01-29 1999-03-23 Komatsu, Ltd. Apparatus and method for lifting single crystals

Also Published As

Publication number Publication date
WO1998010125A1 (en) 1998-03-12
US6139633A (en) 2000-10-31
KR20000068395A (ko) 2000-11-25
KR100310780B1 (ko) 2001-10-18

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