DE19607107A1 - Light conductor to opto-electronic component coupling apparatus for optical communications - Google Patents
Light conductor to opto-electronic component coupling apparatus for optical communicationsInfo
- Publication number
- DE19607107A1 DE19607107A1 DE1996107107 DE19607107A DE19607107A1 DE 19607107 A1 DE19607107 A1 DE 19607107A1 DE 1996107107 DE1996107107 DE 1996107107 DE 19607107 A DE19607107 A DE 19607107A DE 19607107 A1 DE19607107 A1 DE 19607107A1
- Authority
- DE
- Germany
- Prior art keywords
- waveguide
- carrier plate
- light conductor
- optical waveguide
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 12
- 230000008878 coupling Effects 0.000 title claims description 15
- 238000010168 coupling process Methods 0.000 title claims description 15
- 238000005859 coupling reaction Methods 0.000 title claims description 15
- 239000004020 conductor Substances 0.000 title abstract 6
- 230000001154 acute effect Effects 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 9
- 239000000835 fiber Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
Die Erfindung betrifft eine Anordnung zur Kopplung von Signallicht zwischen einem Lichtwellenleiter und einer optoelektronischen Komponente, insbesondere zur Verwendung in Systemen der optischen Nachrichtentechnik.The invention relates to an arrangement for coupling signal light between an optical fiber and an optoelectronic Component, in particular for use in optical systems Telecommunications.
Eine Koppelanordnung gemäß dem Oberbegriff des Patentanspruchs 1 ist aus der Druckschrift "ELECTRONICS LETTERS, Vol. 24, No. 15 vom 21. Juli 1988, Seiten 918 und 919" bekannt. Die Koppelanordnung besteht aus einem Trägersubstrat aus Silizium, das auf einer Seite eine verhältnismäßig tiefe, V-förmige Nut mit darin versenkt fixierter Glasfaser hat. Die Faserstirnfläche ist hier vor einem verspiegelten, schrägen Ende der Nut und darüber eine das Nutende so abdeckende Fotodiode angeordnet, daß aus dem Faserende austretendes Signallicht über den Umlenkspiegel zur Fotodiode reflektiert wird.A coupling arrangement according to the preamble of patent claim 1 is from the publication "ELECTRONICS LETTERS, Vol. 24, No. 15 dated July 21, 1988, pages 918 and 919 ". The coupling arrangement consists of a silicon substrate on one side a relatively deep, V-shaped groove sunk into it has fixed glass fiber. The fiber face is here in front of you mirrored, sloping end of the groove and above the end of the groove arranged so covering photodiode that from the fiber end emerging signal light via the deflecting mirror to the photodiode is reflected.
Außerdem ist in der DE-A-43 23 681 noch eine Koppelanordnung beschrieben, die auf einer Seite eines Trägersubstrates aus Silizium eine relativ flach herausgeätzte, V-förmige Nut aufweist. In addition, DE-A-43 23 681 also has a coupling arrangement described, which on one side of a carrier substrate Silicon has a relatively flat-etched, V-shaped groove.
In der Nut ist eine Lichtleitfaser fixiert und vor dem Faserende ein Glasblock mit einer verspiegelten, schrägen Stirnfläche, die so in einem Winkel von 45° zur Substratoberfläche angeordnet ist, daß aus dem Faserende austretendes Signallicht über den Umlenkspiegel und durch das Trägersubstrat hindurch, in eine an der anderen Substratseite fixierte Fotodiode strahlt. Um die dabei durch Reflexion entstehenden optischen Koppelverluste zu reduzieren, ist die den Glasblock tragende Oberfläche des Trägersubstrates noch mit einer Antireflexionsschicht versehen.An optical fiber is fixed in the groove and in front of the fiber end a glass block with a mirrored, sloping face, so is arranged at an angle of 45 ° to the substrate surface that Signal light emerging from the fiber end via the deflecting mirror and through the carrier substrate, one to the other Photodiode fixed on the substrate side emits. To help you through it Is to reduce the resulting optical coupling losses the surface of the carrier substrate carrying the glass block provided with an anti-reflection layer.
Wird anstelle der Fotodiode eine oberflächenemittierende Laserdiode angeordnet, ist auf der anderen Substratseite zwischen Substratoberfläche und Umlenkspiegel eine Fokussierungseinrichtung vorgesehen, so daß von der Laserdiode emittiertes Signallicht durch das Trägersubstrat hindurch letztlich in das Faserende strahlt.If a surface-emitting laser diode is used instead of the photodiode arranged, is on the other side of the substrate between Substrate surface and deflecting mirror a focusing device provided so that signal light emitted by the laser diode through the carrier substrate ultimately radiates into the fiber end.
Der Erfindung liegt die Aufgabe zugrunde, eine optische Koppelanordnung mit möglichst kurzem Signalweg zwischen dem Ende eines Lichtwellenleiters und einer optoelektronischen Komponente zu schaffen, die sich durch geringe optische Koppelverluste auszeichnet. Diese Aufgabe wird erfindungsgemäß durch eine optische Koppelanordnung mit den im Patentanspruch 1 angegebenen Merkmalen gelöst. Vorteilhafte Ausgestaltungen der optischen Koppelanordnung sind in Unteransprüchen angegeben. Mit der Erfindung erzielbare Vorteile sind der Beschreibung zu entnehmen.The invention has for its object an optical Coupling arrangement with the shortest possible signal path between the end an optical waveguide and an optoelectronic component create that through low optical coupling losses distinguished. This object is achieved by an optical Coupling arrangement with the features specified in claim 1 solved. Advantageous configurations of the optical coupling arrangement are specified in subclaims. Achievable with the invention Advantages can be found in the description.
Die Erfindung wird anhand einer Zeichnung, in der ein Ausführungsbeispiel der Koppelanordnung in einer Seitenansicht schematisch dargestellt ist, wie folgt näher beschrieben:The invention is based on a drawing in which a Embodiment of the coupling arrangement in a side view is schematically described as follows:
In der Zeichnung ist ein Trägerplättchen mit 1 bezeichnet. Es ist beispielsweise aus Silizium, Glas, Lithiumniobat oder auch Lithiumtantalat hergestellt und hat auf einer Plättchenseite wenigstens einen streifenförmig integrierten optischen Wellenleiter 2, der aus zum Werkstoff des Trägerplättchens 1 passendem Material besteht. Dieser Wellenleiter 2 erstreckt sich bis an wenigstens ein stirnseitiges Plättchenende. Dessen Außenfläche 3 ist zumindest im Bereich des Wellenleiterendes so schräg zu der den Wellenleiter 2 aufweisenden Oberfläche 4 des Trägerplättchens 1 angeordnet, daß Außenfläche 3 und Oberfläche 4 einen spitzen Winkel bilden. Die schräge Stirnfläche des Wellenleiterendes kann eine optische Reflexionsbeschichtung aufweisen.In the drawing, a carrier plate is designated 1 . It is made, for example, of silicon, glass, lithium niobate or lithium tantalate and has at least one strip-shaped integrated optical waveguide 2 on one side of the plate, which consists of a material that matches the material of the carrier plate 1 . This waveguide 2 extends to at least one end face plate end. Whose outer surface 3 is arranged at least in the region of the waveguide end so obliquely to the surface 4 of the carrier plate 1 having the waveguide 2 that the outer surface 3 and surface 4 form an acute angle. The oblique end face of the waveguide end can have an optical reflection coating.
Die Gradzahl des spitzen Winkels ist von der optischen Brechzahl des integrierten Wellenleiters 2 und des ihn umgebenden Mediums abhängig und wird daher so gewählt, daß am schrägen Wellenleiterende auch ohne Reflexionsbeschichtung eine Totalreflexion auftreffenden Signallichts gewährleistet ist. Der spitze Winkel umfaßt ungefähr den Bereich von 30° bis 50° und beträgt beispielsweise bei einem Trägerplättchen aus Silizium mit einem aufgebrachten integrierten Wellenleiter, dessen Werkstoff einer genormten Standard-Glasfaser entspricht, etwa 41°.The number of degrees of the acute angle depends on the optical refractive index of the integrated waveguide 2 and the medium surrounding it and is therefore chosen such that total reflection of signal light incident on the oblique waveguide end is ensured even without reflection coating. The acute angle covers approximately the range from 30 ° to 50 ° and is, for example in the case of a carrier plate made of silicon with an applied integrated waveguide, the material of which corresponds to a standardized standard glass fiber, approximately 41 °.
Unmittelbar über dem schrägen Ende des Wellenleiters 2 ist auf der Oberfläche 4 des Trägerplättchens 1 das aktive Fenster einer optoelektronischen Komponente 5 angeordnet. Je nach Bedarf kann es sich bei der optoelektronischen Komponente 5 um eine Fotodiode oder auch um eine oberflächenemittierende Laserdiode handeln. In einem vom schrägen Wellenleiterende entfernten Bereich in den Wellenleiter 2 eingekoppeltes Signallicht wird daher unmittelbar zur Fotodiode (Komponente 5) umgelenkt oder aber, wenn anstelle der Fotodiode eine Laserdiode montiert ist, von dieser emittiertes Signallicht über das als Umlenkspiegel wirkende schräge Ende direkt in den Wellenleiter 2 eingekoppelt. The active window of an optoelectronic component 5 is arranged on the surface 4 of the carrier plate 1 directly above the inclined end of the waveguide 2 . Depending on requirements, the optoelectronic component 5 can be a photodiode or a surface-emitting laser diode. In a region distant from the oblique waveguide end, signal light coupled into the waveguide 2 is therefore deflected directly to the photodiode (component 5 ) or, if a laser diode is installed instead of the photodiode, signal light emitted by the latter via the oblique end acting as a deflection mirror directly into the waveguide 2 coupled.
Die optoelektronische Komponente 5 ist beispielsweise so mittels Thermokompressionsbonden auf dem Trägerplättchen 1 befestigt, daß das aktive Fenster der Komponente 5 und der Umlenkspiegel vom Wellenleiterende einen sehr kleinen Abstand von nur wenigen Mikrometern, beispielsweise 10 µm, haben.The optoelectronic component 5 is fastened, for example, by means of thermocompression bonding to the carrier plate 1 in such a way that the active window of the component 5 and the deflecting mirror are at a very small distance of only a few micrometers, for example 10 μm, from the waveguide end.
Hierdurch ergibt sich ein äußerst kurzer Signalweg mit verlustarmer Kopplung. Der kurze Koppelabstand hat außerdem eine nur geringe Strahlaufweitung des sich ausbreitenden Signallichts zur Folge und gestattet daher die Verwendung von optoelektronischen Komponenten 5 mit entsprechend kleinem aktiven Fenster, das die Übertragung hoher Bitraten gestattet. Wird eine derartige Koppelanordnung beispielsweise bei einer als Sende-/Empfangsmodul ausgebildeten, optisch integrierten Schaltung (IOC-Modul) eingesetzt, erlaubt dies schließlich eine minimale Aufbaugröße mit nur geringen Abmessungen.This results in an extremely short signal path with low-loss coupling. The short coupling distance also results in only a small beam expansion of the propagating signal light and therefore allows the use of optoelectronic components 5 with a correspondingly small active window, which allows the transmission of high bit rates. If such a coupling arrangement is used, for example, in the case of an optically integrated circuit (IOC module) designed as a transmit / receive module, this finally allows a minimal structural size with only small dimensions.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1996107107 DE19607107A1 (en) | 1996-02-26 | 1996-02-26 | Light conductor to opto-electronic component coupling apparatus for optical communications |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1996107107 DE19607107A1 (en) | 1996-02-26 | 1996-02-26 | Light conductor to opto-electronic component coupling apparatus for optical communications |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19607107A1 true DE19607107A1 (en) | 1997-08-28 |
Family
ID=7786425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1996107107 Withdrawn DE19607107A1 (en) | 1996-02-26 | 1996-02-26 | Light conductor to opto-electronic component coupling apparatus for optical communications |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE19607107A1 (en) |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0908747A1 (en) * | 1997-09-17 | 1999-04-14 | Lucent Technologies Inc. | Integrated optical circuit having planar waveguide turning mirrors |
| WO2002008806A3 (en) * | 2000-07-21 | 2002-06-27 | Motorola Inc | Monolithic optical system |
| US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
| US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
| US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
| US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| WO2005062097A1 (en) * | 2003-12-12 | 2005-07-07 | The Boeing Company | Method and apparatus for angled fiber optical attenuation |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1596103A (en) * | 1977-02-22 | 1981-08-19 | Western Electric Co | Optical coupling arrangement |
| EP0192850A1 (en) * | 1985-01-07 | 1986-09-03 | Siemens Aktiengesellschaft | Monolithic integrated optoelectronic semiconductor device |
| US5121457A (en) * | 1991-05-21 | 1992-06-09 | Gte Laboratories Incorporated | Method for coupling laser array to optical fiber array |
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| US5485540A (en) * | 1992-11-16 | 1996-01-16 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide device bonded through direct bonding and a method for fabricating the same |
-
1996
- 1996-02-26 DE DE1996107107 patent/DE19607107A1/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1596103A (en) * | 1977-02-22 | 1981-08-19 | Western Electric Co | Optical coupling arrangement |
| EP0192850A1 (en) * | 1985-01-07 | 1986-09-03 | Siemens Aktiengesellschaft | Monolithic integrated optoelectronic semiconductor device |
| US5121457A (en) * | 1991-05-21 | 1992-06-09 | Gte Laboratories Incorporated | Method for coupling laser array to optical fiber array |
| US5485540A (en) * | 1992-11-16 | 1996-01-16 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide device bonded through direct bonding and a method for fabricating the same |
| DE4321582A1 (en) * | 1993-06-29 | 1995-01-12 | Siemens Ag | Method for producing an oblique facet, in particular a reflecting facet, on the surface of a body |
| DE4406335A1 (en) * | 1994-02-28 | 1995-09-07 | Ant Nachrichtentech | Optical device for beam splitting or wavelength selective branching or coupling of light |
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| Title |
|---|
| JP 4-104107 A., In: Patents Abstracts of Japan, P-1392,July 27,1992, Vol.16,No.345 * |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0908747A1 (en) * | 1997-09-17 | 1999-04-14 | Lucent Technologies Inc. | Integrated optical circuit having planar waveguide turning mirrors |
| US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| WO2002008806A3 (en) * | 2000-07-21 | 2002-06-27 | Motorola Inc | Monolithic optical system |
| US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| WO2005062097A1 (en) * | 2003-12-12 | 2005-07-07 | The Boeing Company | Method and apparatus for angled fiber optical attenuation |
| GB2425616A (en) * | 2003-12-12 | 2006-11-01 | Boeing Co | Method And Apparatus For Angled Fiber Optical Attenuation |
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