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DE19581590T1 - Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden - Google Patents

Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden

Info

Publication number
DE19581590T1
DE19581590T1 DE19581590T DE19581590T DE19581590T1 DE 19581590 T1 DE19581590 T1 DE 19581590T1 DE 19581590 T DE19581590 T DE 19581590T DE 19581590 T DE19581590 T DE 19581590T DE 19581590 T1 DE19581590 T1 DE 19581590T1
Authority
DE
Germany
Prior art keywords
increasing
produced
amorphous silicon
lower temperature
devices based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19581590T
Other languages
English (en)
Inventor
Yaun-Min Li
Murray S Bennett
Liyou Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BP Corp North America Inc
Original Assignee
Amoco Enron Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amoco Enron Solar Inc filed Critical Amoco Enron Solar Inc
Publication of DE19581590T1 publication Critical patent/DE19581590T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H10F77/1668—Amorphous semiconductors including only Group IV materials presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE19581590T 1994-03-25 1995-03-09 Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden Withdrawn DE19581590T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21779994A 1994-03-25 1994-03-25
PCT/US1995/003119 WO1995026571A1 (en) 1994-03-25 1995-03-09 Stabilized amorphous silicon and devices containing same

Publications (1)

Publication Number Publication Date
DE19581590T1 true DE19581590T1 (de) 1997-04-17

Family

ID=22812580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19581590T Withdrawn DE19581590T1 (de) 1994-03-25 1995-03-09 Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden

Country Status (8)

Country Link
US (2) US5646050A (de)
JP (3) JPH09512665A (de)
CN (1) CN1135635C (de)
DE (1) DE19581590T1 (de)
FR (1) FR2721754B1 (de)
GB (1) GB2301939B (de)
IT (1) IT1278061B1 (de)
WO (1) WO1995026571A1 (de)

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DE112013001688B4 (de) 2012-05-24 2019-05-16 Egypt Nanotechnology Center (Egnc) Photovoltaikeinheit mit Bandstoppfilter
DE112012001058B4 (de) * 2011-03-01 2019-08-29 International Business Machines Corporation Verfahren zur herstellung einer tandem-photovoltaikeinheit

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012001058B4 (de) * 2011-03-01 2019-08-29 International Business Machines Corporation Verfahren zur herstellung einer tandem-photovoltaikeinheit
DE112013001688B4 (de) 2012-05-24 2019-05-16 Egypt Nanotechnology Center (Egnc) Photovoltaikeinheit mit Bandstoppfilter

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IT1278061B1 (it) 1997-11-17
FR2721754B1 (fr) 1997-12-05
WO1995026571A1 (en) 1995-10-05
ITRM950184A1 (it) 1996-09-24
ITRM950184A0 (it) 1995-03-24
US5942049A (en) 1999-08-24
US5646050A (en) 1997-07-08
CN1144573A (zh) 1997-03-05
CN1135635C (zh) 2004-01-21
GB2301939B (en) 1998-10-21
JPH09512665A (ja) 1997-12-16
JP2008153646A (ja) 2008-07-03
JP2006080557A (ja) 2006-03-23
FR2721754A1 (fr) 1995-12-29
GB9619784D0 (en) 1996-11-06
GB2301939A (en) 1996-12-18

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