DE1790082C3 - Metal film resistor element and method for its manufacture - Google Patents

Description

Side layer (3) besides chromium nor nickel and contains other metals, causing a diflen and deposition of Go.d in the first layer (2) at the point required for stabilization Heat treatment prevents «« L

1 Method of manufacturing a metal film resistor element according to claim i, characterized in that the first layer (2). their gold content 60 to 95 percent by weight is, on the substrate (1) from an evaporation source made of a nickel-chromium alloy rune (4) and a further evaporation source made of "gold (5) is evaporated. Wöbe, the evaporation sources are independent of each other or b.lden a separate evaporation source. and that the vapor deposition from both

- -recover electrical layer-

It's also <* ^K. _resistance value to be produced resistance nut g ^^ n .; _or similar counterparts in the ^e » ^e ™" _{dfe in} an insulating carrier

* o electrode gWjJjJ ⁶ _resist was scatterbrained: ht be evenly gcDuu _{Ahstand btw,} rule two

^ _{n If n is} reduced and the effective Ie ₁ I Electmden glued _Hch w.rd w.rd

the W ^^ ™ ^ 927 278). In this procedural * ₅ ^(dcuts ^ ^h ^ T "^ specific assessment of ^^" koeffirienten nothing testified. He _{is then} the

£ ^, ^ i ^ .viderstandselement dah.nknown KkuJkducn ^ _{spec (fisch Wld}

going to ^ _e ^S _m ^C _{Icmpcra ture} coefficient des ekk- ^^^ Si ^ without difficulty-

: sirr: "f4trci; rf

contains meuillc, and mi, an elcklnsch staff, en "

^ hpnfnlk chromium-containing second vapor-deposited Se ^a n ^1S Schi [u ^mh dfe Lf the first layer is provided and protects it.

In general, an alloy with a large specific resistance b.lden a resistance element that is electrically stable and has a low Has temperature coefficients. Therefore, so far, a low-resistance element that is electrically is stable and has a low temperature coefficient «! has, by evaporation euier such Legicrung (German Auslegeschnt 1089 861). However, to em low resistance element by a Lcgicrung_ with great To establish specific resistance, it is necessary-Sg that the layer is made thick and accordingly becomes that necessary for vapor deposition Duration extended. Furthermore, the relationship by the D.flerence between the vapor pressures of the components changed slightly and the temperature tends to get high. It is also difficult to

^ Sf "wShef S l'atents ^ nrm
other Au would give

first ?
Nod,

_Jcd " _c h, Jort is one

^ _{the Erfi Jic}

thin layer basically made of _{gold and can} n other additions ^u aluminum and copper. ^^ ' _crste n evaporated thin De Go dgehak the e _dem ^B _weight ratio Sch.ch is uncritical in the Vem and w.rd

indicated by N «ke« nu Chr. then

^m _d ⁶ 2 _e ^ _T ^ p _e i _aturkoe fficient of resistance wirdJeJ "J ^, pften thin layer genng and Jer a first« ge ^ P _{k] is a necessary for the} In ^ r spezinsche w. ^. ^ _{erfordcrlichp}

steaming dt ^r frsien _{der Ejntluß}

^ _dc n compositions _{can be reduced}

^ J ^^ Xeben is, according to the invention

Weave "besc" ™ _d " _{the first thin}

Jng gold d = r haup _e ^ _{The temperature.}

Sc i des W '«rst ^^ ^

^ effuicnt d «wiae _da ^ _{measure dgs}

ÄÄ and chrome selected accordingly

h, ^the _IL ^{first aui} S ^e - be shortened, and therefore the ratio ^ i-

_U nH ^ r ^{lttt tar-} "^ ^ ^{SChen the} composition of the thin cons-

ίίίη a dritahiiS ^{And Man} f> ^{with an} impact layer not much changed and a metal

Sibehandlune aSefih ¹¹ ; ^ d therefore becomes a layer-resistive element with uniform

ί SSJetfem that al ^ ln. η \ ϊ * ^S ' ^{Ch however 5} properties can be obtained.

STfiSd which SrJ ⁸ 'ΐ "W ^^ handl ^ g An exemplary embodiment of the invention

ledampfien thin " ^a . ^Uf f ^estan ^ ^{eiI the} first is explained on the basis of the drawing in which is

the surface 1 Il ''^{'Ulffundiert and} Fig. 1 shows the schematic representation of the structure

let b ^ rkf the _e ror _P T ⁿ ^ "^ ^" ^α "resistance element according to the invention,

Serstandes of the nSd «temperature coefficient of ₁₀ Fig. 2 the schematic representation of the arrangement

\ V, the state of gold that _the tempe.aturkoef- now «a source of evaporation as an example

T ffSv « ^er "'' κ ", ^on S ^edam P ^ften vacuum vapor deposition. those used to manufacture

c ^ ^{deS area egg; a} "thin layer is used, soft that

d £ L S ν l \ ^ understanding will. Forms resistance element of the invention,

most "thinJ? h ^?"" ^{g 8Uf dCT first 15 Fi} 8 · ^{3 the} illustration of the relationship between

.-thin £ sh? i '"" ^{ZWdte auf} " ^the gold content and the temperature coefficient

dun "des S ^VOr " ^ u T ^{DiffUS1On and the} resistance in an experimental example

to prevent the separation of gold or to destroy the invention

innTtl7JT * f * ™ ^{citCI1 auf} " ^Fl * · ⁴ die'Darstellung the relationship between

f? mni SrL ^ r ' ^{eht in it} - ^{the first 2} ° temperature and resistance in an experimental

come up, ümpfu. Sch ch, opposite the air to poker game after the F.rfindun * and

h, ί '^ el k Lh ^ge r ^amP u ^{dnnc Scllicht may} ί ·' «· 5 cine representation of the districts between

"inn π ·" nn AT ^{adhere dCr Cr} ' ^tCn - ^the gold content of the thin layer and the specific

tt , 5 _t fh lh hf, l I ⁰ ' ⁰ "' ^{DiC DlCkc d0r fischcn} layer resistance during a test, -

Ih - ' _n r ° ^b H ^{dCr mi} "« nia] possible ₂₅ sp.el after the hearing.

^S:; "5K ^de '" dci A- ^, ¹ ^ ^{this% Virkun} S Cemaü Fi ε. 1 (I) was the first vaporized

t ™ 5 e ir, Lh ^{dl ;, sen} / ^weck _t ^to achieve, becomes thin layer2. d, e nickel. Chrome and gold

, .1. ΐ, Ι, Γ, ^g vf ^d , T ^P uT ^{SdllCht by means of me- ness ; i formed on an} insulating substrate. that

? ' h, ^ m holds? 1 u ^{C first on} g ^edam P ^f fc is made of ceramic. This thin layer 2 can be in

, ri ^{USnameVlln (i0ld} ' ^Diesvcr - ³⁰ can be eebildct in the following way. According to FIG. 2

UV; "XL", ^HerStdl rf ^des MetaiUchicht- are an Iieeef. Of a nickel-chromium alloy

S hl ,, 1 ^8e _A ^m M ^{er Erf! Ndun} ? · ^{Da dit;} runus block 4 cm. in which the balance ratio

M ' ^! 'k up rW L ΐΤΪ ^ f ^{mrfUnS only dur von Nlckel 7U} fhn ^ m 80 to 20 legs, and a te-

M (V ₁ -KUIe eier Mckel-Chromium alloy can be formed. The gold 5 contains, in a single vacuum

This can be done in that the evaporation of the gas takes place in the chamber and the temperatures, i.e. the

snvpt w.rd or the molecules of the vapor pressure of the two tiecel. become independent

Gpu «are hindered by a screen, which are placed from each other. With this implementation

The formation of the first class follows. This process was the temperature of the crucible with the

TV _n ⁶ T f ^h r ^aiS _f ^daS , Y ^{experience the} formation of the nickel-chromium ligation block through resistance

w on a vapor-deposited thin layer through the 40 heated / une kept at et «a 1350 C and the Tcm-

V ₁ Using a zusatzl.chen \ erdampfungsquelle. temperature of the Ticeels with the Tdold was also

L;, he taking into account the above mentioned by resistance heating to about 1350 C

N \; rkung. which are brought in by the second thin layer. The weight percentage of gold in the

must be cast, it turns out that not only the first vapor-deposited thin layer is through the

N.wkJ-Chrom-Legicrung. but also metals ₄ s temperature of the evaporation source. the measure of the

I 1 can ^ * ''" ^{Cht used wcr} " ^{from the} evaporation ^ uelle "added metal U.". . . and determines the distance between the evaporation source L) ie first and second vapor-deposited thin film and the Cirundkörper and therefore will be formed on EMEM .solierendcn substrate it by prefixing _B chcnde measurement of attachment I - .. π material that in conventional vapor deposition method so by Evaporation of gold. Nickel and chromium is used, e.g. B. glass or ceramic, can be used as a separate base bait on the substrate. As described above, a certain vapor deposition condition is possible. The metal layer resistance - the weight ratio of gold - can be found directly under this information according to the invention using a vapor deposition. In the case of the present known vacuum evaporation apparatus, the evaporation condition V L ρη Y ^erdam P ^fun 8 ^s 4 ″ was changed to the ratio between the gold-nickel-chromium alloy, e.ne Nickel-chromium-gold content and the temperature coefficient of the counter-alloy and other metals for forming the up- stand. The vacuum space of the vacuum-imposed thin layers are thermally vaporized on a vacuum ionic beam heating and resistance heating 60 of 5 10 "^ Torr The evaporation and accumulation was carried out on the substrate 1 from the two evaporation can also be carried out by ion bombardment. Fung sources up to a thickness of 300 Å during As described above. can be vapor-deposited according to 40 to 150 seconds. The temperature change of a resistance layer with little of the base body was kept at room temperature and low. The thin film thus obtained would have a specific resistivity to be obtained. In addition to this, the time required for the vapor deposition can be significantly increased by a conventional process, in contrast to the purpose of stabilizing the electrical manufacturing processes that are currently customary. The temperature of the heating will be

in correlation to the duration of the heat treatment and can be between 150 and 350 C.

After the first vapor-deposited thin layer, the main component of which is gold, has been heated for 10 hours at 250 ° C., the temperature coefficient of the resistance has changed depending on the gold content, as indicated by the curve α in FIG. 3 is shown. In Fig. 3 shows the horizontal axis R the gold content: (percent by weight) of the thin layer and the vertical axis C "shows the temperature coefficient of resistance 10 ⁽ⁱ / grd Resistance element required value, for example a value within ± 50-10 ^G / degree, the gold content, as the drawing shows, must be about 60 percent by weight and this value must be controlled directly 60 weight percent is set, the sheet resistance of the thin film is changed as shown in Fig. 5. Fig. 5 shows the relationship between the gold content R (weight percent) and the sheet resistance R ₀ (ohms) when the thickness of the thin layer is 300 A. Under the condition that the thickness is 300 A, the sheet resistance is 57 ohms, which means that a resistance element which fulfills the purpose of the invention , that is, a metal film resistance element whose temperature coefficient of resistance and sheet resistance and, accordingly, specific resistance are small, can be obtained.

According to the invention, an increase in the temperature coefficient of the resistance is eliminated by that the second evaporated thin layer 3 is formed on the first evaporated thin layer 2 becomes as shown in Fig. 1 (2). This can reduce the possibility of a conductive Gold layer is formed on the surface by diffusion and deposition during heat treatment. avoided and the favorable electrical properties, which the first vapor-deposited thin Have layer can be maintained. A nickel-chromium alloy or a metal whose Temperature coefficient of resistance is not very large, can be used as a metal to form the second thin layer can be used. It can also be just a single metal among chromium, or titanium Nickel can be used. After the first and second evaporated thin layers have been formed these two layers are heated for the purpose of stabilizing the properties, however the thickness of the second thin layer must be selected depending on the material, so that the diffusion of gold during the heat treatment can be hindered or prevented. When evaporating a nickel-chromium alloy as a second thin layer up to a thickness of about The heating temperature can be selected between 200 and 300 C and a few hundred A the heating can be continued for a period of 10 or more hours. If the duration the heating can be changed arbitrarily, the heating temperature range can be from 150 can be extended to 350 C. The second evaporated thin layer must be evaporated to a thickness that do not have the electrical properties of the first vapor-deposited thin layer bothers, and this thickness can vary depending on the different materials used will.

The curve b of FIG. 3 shows the temperature coefficient of the resistance of a metal layer, which is obtained by vapor deposition of the second vapor-deposited thin layer with nickel and chromium up to a thickness of 200 Å on the first vapor-deposited thin layer with nickel, chromium and gold, the gold content of the first layer being variable is. Then the two thin layers are heated at a temperature of 250 ° C. for 10 hours.

The curves c, d, c and / in FIG. 4 show the relationship between the temperature T (C) and the change in resistance. IR / R ("0) when the amounts of gold are 62, 75, 83 and 90%, respectively. These changes in resistance are calculated based on the resistance values c obtainable when the ambient temperature is 30 ° C. From the above It can be seen that in a thin layer, the gold content of which is about 80.degree the gold content of the first vapor-deposited thin layer of the resistance element, whose temperature coefficient of resistance is approximately zero, is about 20% higher than the gold content of the resistance element, which is obtained by heating only the first vapor-deposited thin layer and whose temperature coefficient of resistance is approximately zero and that the slope of the curve is weak. When the gold content is about 80 "0, de The temperature coefficient of the resistance is very low and the sheet resistance is 30 ohms. These two values fully serve the purpose of the invention.

According to the invention, the gold content of the first vapor-deposited thin layer is between 60 and 95 "ο selected. As a result, the temperature coefficient of resistance roughly between

50 · H) <Vgrd and -100-10 ^B / grd changed. The sheet resistance is also lower than 60 ohms. Various modified embodiments of the invention can be obtained based on the experimental example described above by changing the gold content of the first evaporated thin layer within a range of 60 to 95 "0 by changing the metals for forming the second evaporated thin layer within that described above Metals can be changed and by continuing to change the thicknesses of the layers.

The following is an embodiment of the invention described in which each of the evaporated thin layers is a mixture of nickel, chromium and other addition metals, e.g. B. aluminum and copper. The first evaporated thin Layer that contains nickel, chromium, aluminum, copper and gold, and its gold content is 33 percent by weight was formed on an insulating substrate made of ceramics by adding gold and a nickel-chromium alloy in which the weight ratio of nickel to chromium. aluminum and copper is 75-20-2.5-2.5, the second evaporated thin layer, the

Nickel, chrome, aluminum and copper revealed. was then evaporated on the first thin Layer formed by an alloy called the weight ratio of nickel to chromium. aluminum and copper is 75-2O-2, '5-2.5, evaporated would. The first vapor-deposited thin layer of the Mclallschichl resistance element was up to evaporated to a thickness of about 300 Å and following the formation of this first layer, the

second evaporated thin layer evaporated to a thickness of 150 Å. After the vapor deposition had ended, the two layers were heated ^{at 250.degree. C. for 10 hours.} The dielectric layer resistance element has a contradiction of about 3 ohms and a very low temperature coefficient of resistance. The change in resistance of this resistance element in relation to temperature is shown as curve e in FIG.

1 sheet of 2 drawings

Claims (1)

steamed film Is rr Layer the io provided on the first layer fst and protects them, thereby geke η η it of properties