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DE10260432A1 - Rapid cooling LED for lighting has heat carried away via dielectric, substrate, leads and surface of gas-tight cover; substrate lamellas improve thermal exchange during generation of light energy - Google Patents

Rapid cooling LED for lighting has heat carried away via dielectric, substrate, leads and surface of gas-tight cover; substrate lamellas improve thermal exchange during generation of light energy Download PDF

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Publication number
DE10260432A1
DE10260432A1 DE10260432A DE10260432A DE10260432A1 DE 10260432 A1 DE10260432 A1 DE 10260432A1 DE 10260432 A DE10260432 A DE 10260432A DE 10260432 A DE10260432 A DE 10260432A DE 10260432 A1 DE10260432 A1 DE 10260432A1
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Prior art keywords
substrate
gas
leads
tight cover
dielectric
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DE10260432A
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German (de)
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Fuh Lih Ming
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Ming Fuh Lih Tali
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Ming Fuh Lih Tali
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8586—Means for heat extraction or cooling comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection

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  • Led Device Packages (AREA)

Abstract

The LED has semiconductors attached to a substrate, a highly thermally conductive gas-tight cover, an electrode connected to the semiconductors, leads and a dielectric as an isolating cooling liquid or gas filling in the gas-tight cover that can be introduced after a gas is removed. Heat is carried away via the dielectric, substrate, leads and cover surface. Substrate lamellas improve the thermal exchange during generation of light energy. The light emitting diode has semiconductors (31) attached to a substrate (32), a gas-tight cover (36) of highly thermally conductive material, an electrode (33) connected to the semiconductors, two or more leads (34) and a dielectric (37) as an isolating cooling liquid or gas filling in the gas-tight cover that can be introduced after a gas is removed. Heat is carried away via the dielectric, the substrate and the leads and from the surface of the cover, whereby substrate lamellas improve the thermal exchange during generation of light energy.

Description

Die Erfindung betrifft eine Leuchtdiode und insbesondere eine schnell kühlende Leuchtdiode, die übliche Beleuchtungseinrichtungen ersetzen kann, die den Schaltungsaufbau vereinfacht, Energie einspart und den Lichtwirkungsgrad verbessert, um die Lebensdauer des leuchtenden Halbleiters zu erhöhen.The invention relates to a light emitting diode and especially a quick cooling one LED, the usual Lighting devices can replace the circuit structure simplified, saves energy and improves lighting efficiency, to increase the life of the luminous semiconductor.

Leuchtdioden (LED) werden in modernen Technologien vielfach verwendet, und zwar in unterschiedlichen Spezifikationen im Bereich der Anzeige, der Darstellung, der Verkehrslichttechnik, der Beleuchtung, usw..Light emitting diodes (LED) are used in modern technologies widely used, in different specifications in the area of display, presentation, traffic lighting technology, the lighting, etc.

Eine übliche Leuchtdiode enthält einen abgedeckten Halbleiter und eine Elektrode, wobei durch wärmeisolierendes Epoxyd der Halbleiter sowie Zuleitungen geschützt werden.A common light-emitting diode contains one covered semiconductor and an electrode, being by heat insulating Epoxy of the semiconductors and supply lines are protected.

LED's haben jedoch auch Nachteile: Der Schaltungsaufbau eines Satzes eines Halbleiters und einer Elektrode ist mit Epoxydharz umgeben, das einen geschlossenen Raum für Wärme darstellt. Obgleich der Halbleiter einer LED üblicherweise eine Kaltlichtquelle darstellt, erzeugt der Halbleiter jedoch Wärme beim Licht aussenden und die Temperatur der aktiven Ebene erreicht 400°C. Gleichwohl ist die Strahlungseffizienz der LED , nicht betroffen, da sie einen hohen Energieaustauschwirkungsgrad aufweist. Die Umgebung des Halbleiters ist der goldene Strahlungsbereich. Die Hitze kann jedoch nicht abgestrahlt werden, da der Halbleiter 11 von dem Epoxyd umgeben ist. Die Hitze kann nur auf einem Weg abgeleitet werden, nämlich über die Zuleitungen, welche die Regel der Hitzeableitung mißachtet.However, LEDs also have disadvantages: the circuit structure one set of a semiconductor and an electrode is made with epoxy resin surrounded, which represents a closed space for warmth. Although the Semiconductors of an LED usually is a cold light source, the semiconductor generates heat when Send out light and the temperature of the active layer reaches 400 ° C. nevertheless the radiation efficiency of the LED is not affected as it has high energy exchange efficiency. The environment of the semiconductor is the golden radiation area. However, the heat cannot be emitted because the semiconductor 11 is surrounded by the epoxy. The heat can only be derived in one way, namely via the supply lines, which disregards the rule of heat dissipation.

Obgleich die Temperatur einer LED konstant oder gering ist, heißt dies nicht, dass eine LED keine Wärme produziert. Die LED ist ein Element aus Halbleiter, so dass Überhitzungstemperaturen zu einem Bruch der „Junction" (der aktiven Schicht einer P-N-Verbindung) führt, so dass der Abgabewirkungsgrad reduziert ist und sogar Schäden entstehen. Höhere Ströme führen zum Einbrennen der LED, so dass die Hitze ein hauptsächlicher Grund ist, dass die Qualität der LED und des Halbleiters sich verschlechtert.Although the temperature of an LED is constant or low means not that an LED doesn't produce heat. The LED is an element made of semiconductors so that overheating temperatures too a break in the "junction" (the active layer a P-N connection), so that the delivery efficiency is reduced and even damage occurs. higher streams to lead to burn in the LED so that the heat is a major one The reason is that the quality the LED and the semiconductor deteriorate.

Aufgrund von Dampf und Oxidation und weil das den Halbleiter und die Elektrode umgebende Material Epoxydharz ist, erzeugt die Verbindung zwischen der Zuleitung und dem Epoxyd einen Freiraum, wenn Wärme produziert wird. Daher können Feuchtigkeit, Luft und andere Unreinheiten leicht in die LED eintreten und den Halbleiter korrodieren, welches den Abbau beschleunigt und die Lebenszeit verkürzt.Due to steam and oxidation and because the material surrounding the semiconductor and the electrode Is epoxy resin, creates the connection between the supply line and the epoxy a space when heat is produced. Therefore can moisture, Air and other impurities easily enter the LED and the Semiconductors corrode, which accelerates degradation and shortens life.

Der Erfindung liegt daher die Aufgabe zugrunde, eine schnell kühlende Leuchtdiode anzugeben, die die vorgenannten Nachteile vermeidet.The invention is therefore the object underlying a quick cooling Specify LED that avoids the aforementioned disadvantages.

Diese Aufgabe wird durch die im Anspruch 1 angegebene Erfindung gelöst.This task is claimed by the 1 specified invention solved.

Gemäß der Erfindung ist die Schaltung des Halbleiters und der Elektrode fest auf einem Substrat und einer Zuleitung fixiert und in einer strahlungs- und gasdichten Abdeckung (z. B. Glas) aufgenommen. Gas wird im Volumen vollständig herausgesaugt und es wird isolierende oder kühlende Flüssigkeit oder Gas (Dielektrikum) eingeführt und abgedichtet, so dass die LED in stabiler Umgebung und keine Luft, Feuchtigkeit und Unreinheiten, die den Halbleiter beschädigen, eintreten können. Soweit es die Hitze betrifft, kann diese in einen Strahlungsbereich um den Chip geleitet werden oder an äußere Lamellen und dann durch die dielektrische gasdichte Abdeckung schnell nach außen in die Luft abgeleitet werden, so dass Spezifikationen nicht mehr beschränkt sind und die Merkmale und die Lebensdauer beträchtlich verbessert sind:
In einer weiteren Ausbildungsform der Erfindung ist eine schnell kühlende Leuchtdiode angegeben, die mehrere Chips enthält, da sie gute Abstrahlungswerte aufweist. Z. B. kann Weißlicht durch Mischen von blauen und gelben Halbleitern erzeugt werden, und die Mischung von blauen, grünen und roten Halbleitern kann verschiedene Lichtfarben erzeugen. Aufgrund hoher Volumenleistung kann diese konventionelle Glühkolben und LED-Arrays ersetzen.According to the invention, the circuit of the semiconductor and the electrode is firmly fixed on a substrate and a feed line and is accommodated in a radiation and gas-tight cover (e.g. glass). The volume of gas is completely sucked out and insulating or cooling liquid or gas (dielectric) is introduced and sealed so that the LED can enter in a stable environment and no air, moisture and impurities that damage the semiconductor can enter. As far as heat is concerned, it can be directed into a radiation area around the chip or to outer fins and then quickly dissipated to the outside through the dielectric gas-tight cover, so that specifications are no longer limited and the features and life span are considerable are improved:
In a further embodiment of the invention, a rapidly cooling light-emitting diode is specified, which contains several chips, since it has good radiation values. For example, white light can be produced by mixing blue and yellow semiconductors, and the mixture of blue, green and red semiconductors can produce different light colors. Due to its high volume output, this can replace conventional glow plugs and LED arrays.

Nachstehend wird die Erfindung im einzelnen anhand eines Ausführungsbeispiels näher erläutert. Es zeigen:The invention is hereinafter described in individual using an exemplary embodiment explained in more detail. It demonstrate:

1 einen Schnitt durch eine übliche Leuchtdiode 1 a section through a conventional light emitting diode

2 eine vergrößerte Ansicht eines Teils von 1, das den Freiraum der Drahtzufuhr und des Epoxyd darstellt, 2 an enlarged view of part of 1 which represents the free space of the wire feeder and the epoxy,

3 eine perspektivische Ansicht einer Kaltlicht-Leuchtdiode gemäß einer Ausführungsform der Erfindung, 3 2 shows a perspective view of a cold light-emitting diode according to an embodiment of the invention,

4 eine Schnittansicht, die die Kühlung zeigt. 4 a sectional view showing the cooling.

5 eine Schnittansicht, die eine andere Ausführungsform der Erfindung zeigt, und 5 4 is a sectional view showing another embodiment of the invention, and

6 eine perspektivische Ansicht einer weiteren Ausführungsform. 6 a perspective view of another embodiment.

3 zeigt die perspektivische Ansicht einer Ausführungsform der vorliegenden Erfindung. Der Halbleiter 31 ist primär auf dem Substrat 32 angeordnet und an einer Elektrode 33 befestigt. Die Zuleitung 34 erstreckt sich durch die Abdichtung 35. Der Körper des genannten Elements wird mit einer gasdichten Abdeckung 36 versehen, aus der das Gas vollständig herausgesaugt ist. Schließlich wird das Dielektrikum 37 in die Abdeckung injiziert. In der Abdeckung befindet sich das Substrat 32, an dem ein Satz von Lamellen 38 befestigt ist. Die gasdichte Abdeckung 36 besteht als Abdeckung aus einem Material hoher thermischer Leitfähigkeit und kann unterschiedliche Spezifikationen und Formen aufweisen. Der Innenraum ist für die Körperelemente bestimmt. Das Dielektrikum 37, das in die gasdichte Abdeckung 36 injiziert wird, berührt den Chip 31 und das Substrat 32 direkt und es beruht auf Gas oder einer isolierenden Kühlflüssigkeit. Ein anderes Beispiel ist ein Vakuumraum gemäß 4. Hierbei wird die vom Chip 31 produzierte Wärme 50 durch Strahlungsabgabe verteilt und es ist genügend Raum für Chips vorhanden, die in dem Vakuumraum befestigt werden können. 3 shows the perspective view of an embodiment of the present invention. The semiconductor 31 is primarily on the substrate 32 arranged and on an electrode 33 attached. The supply line 34 extends through the seal 35 , The body of the element is covered with a gas-tight cover 36 provided, from which the gas is completely sucked out. Finally, the dielectric 37 injected into the cover. The substrate is in the cover 32 on which a set of slats 38 is attached. The gas-tight cover 36 consists of a material made of high ther mixer conductivity and can have different specifications and shapes. The interior is intended for the body elements. The dielectric 37 that in the gastight cover 36 is injected, touches the chip 31 and the substrate 32 directly and it is based on gas or an insulating coolant. Another example is a vacuum room according to 4 , This is the chip 31 produced heat 50 distributed by radiation emission and there is enough space for chips that can be attached in the vacuum space.

5 zeigt eine Schnittansicht einer anderen Ausführungsform der vorliegenden Erfindung mit einer Leuchtdiode. Wie in der Figur dargestellt ist, wird der Chip 31 eingeschaltet, um Licht zu erzeugen. Die entstehende Wärme 50 wird durch das Dielektrium 37, das den Chip 31 umgibt, das Substrat 32 und die Stromzufuhr 34 abgegeben und von der Oberfläche der gasdichten Abdeckung und den Substratlamellen 38 schnell abgegeben, um die Wärmeaustauschrate zu verbessern. 5 shows a sectional view of another embodiment of the present invention with a light emitting diode. As shown in the figure, the chip 31 turned on to produce light. The resulting warmth 50 is through the dielectric 37 that the chip 31 surrounds the substrate 32 and the power supply 34 released and from the surface of the gas-tight cover and the substrate fins 38 dispensed quickly to improve the heat exchange rate.

Die Erfindung verwendet Konstruktionsmerkmale und Elektronikcharakteristika, welche die physikalischen Gesetze beachten und den Wärmeaustausch beträchtlich verbessern, um den Durchbruch von Leuchtdioden zu verbessern und die Lebensdauer zu erhöhen. Die Erfindung ist sehr kosteneffektiv in der Industrie und trifft die aktuellen Bedürfnisse und Sicherheitsanforderungen.The invention uses design features and electronics characteristics that the physical laws note and heat exchange considerably improve to improve the breakthrough of light emitting diodes and to increase the lifespan. The invention is very cost effective in the industry and hits the current needs and security requirements.

Obgleich die vorstehende Beschreibung Ausführungsformen darstellt, ist es dem Fachmann geläufig, dass jegliche Änderungen oder Abweichungen der Beispiele der vorliegenden Erfindung am Schutzumfang der beigefügten Ansprüche verbleiben.Although the foregoing description of embodiments represents, it is known to those skilled in the art that any changes or variations of the examples of the present invention in scope the attached Expectations remain.

Claims (2)

Schnell kühlende Leuchtdiode mit einem Substrat (32) mit einem Satz von Halbleitern, die an dem Substrat befestigt sind, einer gasdichten Abdeckung (36) aus hochthermisch leitfähigem Material, wobei deren Innenseite den Halbleiter (31) und das Substrat (32) aufnimmt, mit einer Elektrode (33), wobei eine Mehrzahl von Halbleitern auf dem Substrat befestigt und mit der Elektrode verbunden sind, mit zwei oder mehr Zuleitungen, die sich von der gasdichten Abdeckung erstrecken, einem Dielektrikum (37) als isolierende Kühlflüssigkeit oder Gasfüllung in der gasdichten Abdeckung, welche die Halbleiter berührt, wobei das Dielektrikum in die gasdichte Abdeckung einführbar ist, nachdem Gas aus der Abdeckung entfernt ist, und die Wärme durch die dielektrische Umgebung des Halbleiters, des Substrats und der Zuleitungen abführbar und von der Oberfläche der gasdichten Abdeckung entfernbar ist, wobei Substratlamellen den thermischen Austausch bei der Erzeugung von Lichtenergie verbessern.Fast cooling LED with a substrate ( 32 ) with a set of semiconductors attached to the substrate, a gastight cover ( 36 ) made of highly thermally conductive material, the inside of which contains the semiconductor ( 31 ) and the substrate ( 32 ) with an electrode ( 33 ), wherein a plurality of semiconductors are attached to the substrate and connected to the electrode, with two or more leads extending from the gas-tight cover, a dielectric ( 37 ) as an insulating cooling liquid or gas filling in the gas-tight cover, which contacts the semiconductors, the dielectric being insertable into the gas-tight cover after gas has been removed from the cover, and the heat being dissipatable through the dielectric environment of the semiconductor, the substrate and the leads and is removable from the surface of the gas-tight cover, wherein substrate lamellae improve the thermal exchange in the generation of light energy. Kaltlicht-Leuchtdiode nach Anspruch 1, bei der das Dielektrikum als Vakuum ausgebildet ist und die durch die Halbleiter erzeugte Wärme über Strahlungsabgabe verteilt wird.Cold light-emitting diode according to claim 1, wherein the Dielectric is formed as a vacuum and through the semiconductors generated heat via radiation emission is distributed.
DE10260432A 2002-12-21 2002-12-21 Rapid cooling LED for lighting has heat carried away via dielectric, substrate, leads and surface of gas-tight cover; substrate lamellas improve thermal exchange during generation of light energy Withdrawn DE10260432A1 (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253447B2 (en) 2003-02-28 2007-08-07 Citizen Electronics Co., Ltd. Light emitting element and light emitting device with the light emitting element and method for manufacturing the light emitting element
FR2926947A1 (en) * 2008-01-30 2009-07-31 Fd Eclairage Architectural Sa LIGHT SOURCE WITH LED DIODES
EP2345078A1 (en) * 2008-10-24 2011-07-20 Cree, Inc. Lighting device using solid state light emitting devices having a transparent heat sink
WO2011098358A1 (en) * 2010-02-15 2011-08-18 Osram Gesellschaft mit beschränkter Haftung Lamp having gas filling
WO2012038304A1 (en) * 2010-09-20 2012-03-29 Osram Opto Semiconductors Gmbh Housing for an optoelectronic semiconductor component and semiconductor component
DE202011101257U1 (en) 2011-05-23 2012-05-30 Promotec Gmbh Light-bulbs
US9178332B2 (en) 2010-09-20 2015-11-03 Osram Opto Semiconductors Gmbh Housing for an optoelectronic semiconductor component and method for producing such a housing

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253447B2 (en) 2003-02-28 2007-08-07 Citizen Electronics Co., Ltd. Light emitting element and light emitting device with the light emitting element and method for manufacturing the light emitting element
DE102004009998B4 (en) * 2003-02-28 2010-05-06 Citizen Electronics Co., Ltd., Fujiyoshida-shi A light emitting diode and light emitting diode device comprising a light emitting diode
US7737462B2 (en) 2003-02-28 2010-06-15 Citizen Electronics Co., Ltd Light emitting diode and light emitting diode device including the light emitting diode element and method for manufacturing the light emitting diode
US7745835B2 (en) 2003-02-28 2010-06-29 Citizen Electronics Co., Ltd. Light emitting diode and light emitting diode device including the light emitting diode element and method for manufacturing the light emitting diode
FR2926947A1 (en) * 2008-01-30 2009-07-31 Fd Eclairage Architectural Sa LIGHT SOURCE WITH LED DIODES
FR2926926A1 (en) * 2008-01-30 2009-07-31 Fd Eclairage Architectural Sa Electric light source for use in e.g. headlight of motor vehicle, has heat transfer fluid provided in thermal conductive contact with rear surface of plate/support of LED, where plate has dissipator immersed in heat transfer fluid
EP2345078A1 (en) * 2008-10-24 2011-07-20 Cree, Inc. Lighting device using solid state light emitting devices having a transparent heat sink
US8587186B2 (en) 2010-02-15 2013-11-19 Osram Ag Lamp having gas filling
CN102762912A (en) * 2010-02-15 2012-10-31 欧司朗股份有限公司 lamp with gas filling
WO2011098358A1 (en) * 2010-02-15 2011-08-18 Osram Gesellschaft mit beschränkter Haftung Lamp having gas filling
WO2012038304A1 (en) * 2010-09-20 2012-03-29 Osram Opto Semiconductors Gmbh Housing for an optoelectronic semiconductor component and semiconductor component
US9070853B2 (en) 2010-09-20 2015-06-30 Osram Opto Semiconductors Gmbh Package for an optoelectronic semiconductor component and semiconductor component
US9178332B2 (en) 2010-09-20 2015-11-03 Osram Opto Semiconductors Gmbh Housing for an optoelectronic semiconductor component and method for producing such a housing
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