CN87103486B - Glod platinam containing single crystal silicon interchangeable termistor and its producing method - Google Patents
Glod platinam containing single crystal silicon interchangeable termistor and its producing method Download PDFInfo
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- CN87103486B CN87103486B CN87103486A CN87103486A CN87103486B CN 87103486 B CN87103486 B CN 87103486B CN 87103486 A CN87103486 A CN 87103486A CN 87103486 A CN87103486 A CN 87103486A CN 87103486 B CN87103486 B CN 87103486B
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- Prior art keywords
- thermistor
- silicon
- single crystal
- value
- resistance
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- 239000010931 gold Substances 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000009966 trimming Methods 0.000 claims description 2
- -1 under 1200 °C Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 238000009529 body temperature measurement Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000003483 aging Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention provides a gold-mixing platinum-mixing monocrystal silicon exchange thermistor and a making method thereof, which belongs to the technical field of temperature sensors. The present invention mainly adopts the method that impurities of gold and platinum are mixed in P-shaped monocrystal silicon, so that the thermistor has the characteristic of negative temperature, the B value of the thermistor is 3850K, the deviation distribution of the B value is smaller than plus or minus 0.3%, and the use temperature range is from-50DEG C to 100DEG C. The B value of the thermistor of the present invention is moderate, and the thermistor has the advantages of favorable exchange performance, easy manufacture and low cost, so the thermistor of the present invention is an ideal element for making linear assemblies having linear output. The thermistor can be widely used in the operative technology fields of temperature measurement, temperature control, etc. in medical instrument industry, food industry, household electric appliances, etc.
Description
The present invention relates to a kind of unicrystalline silicon thermistor and manufacture method thereof with negative temperature coefficient of resistance.
Be used in the monocrystalline thermistor that the method for mixing deep-level impurity in the monocrystalline silicon makes, the consistency of its resistance-temperature characteristics is greatly improved than oxidate semi-condcutor thermo-sensitive resistance, can satisfy the interchangeability requirement in using preferably, obtains increasingly extensive application.
Tokyo Zhi Pu Electric Co., Ltd once proposed a kind of manufacture method (the clear 58-32481 of Japan's special permission) of silicon single crystal thermal sensitive resistor.They adopt the method for mixing golden impurity in P type or N type silicon single crystal, made the thermistor with negative temperature coefficient, its B value is 4900K, and the deviation profile of the resistance in the time of 30 ℃ is less than ± 0.5%, but minimum serviceability temperature only reaches-20 ℃, and is not to exchange.About the exchange performance being played the discrete case of the B value of main influence, in this patent documentation is open, do not provide the result.The product advertising introduction of the silicon thermistor that provides according to Tokyo electronics Institute of Metallurgical Technology, it is-30 ℃～100 ℃ that this product uses warm area, the deviation profile of B value is ± 2～3%, the deviation profile of resistance is ± 2% in the time of 25 ℃, and this reflects the main performance index of present silicon single crystal thermal sensitive resistor.
The interchangeability of the thermistor that proposes for the satisfied temperature measuring instrument requires and is produced on the needs of the linear modules that has linear output in the broad warm area, wish to obtain the B value at 4000K or lower silicon single crystal thermal sensitive resistor, simultaneously, the deviation profile of its B value requires littler than existing product.And purpose of the present invention, just provide a kind of in p type single crystal silicon gold doping, the method for mixing platinum, thereby obtain the B value and be 3850K, the use warm area is-50 ℃～100 ℃ a single crystal silicon interchangeable thermistor, the deviation profile of its B value is less than ± 0.3%, the deviation profile of resistance is less than ± 0.3%, to satisfy the interchangeability requirement of degree of precision in the time of 25 ℃.
Thermistor provided by the present invention is to mix gold and two kinds of impurity of platinum in P type silicon single crystal simultaneously, makes in the forbidden band to occur apart from the platinum donor level of top of valence band 0.30ev, the golden donor level of 0.35ev and the platinum acceptor level of 0.36ev.When original shallow acceptor concentration in the concentration ratio monocrystalline of these energy levels was a lot of greatly, because the compensating action of these energy levels, material presented negative temperature characteristic, and its B value is about 3850K.The method of mixing gold and platinum in P type silicon single crystal simultaneously mainly adopts the method for diffusion, promptly selects for use the P type silicon single crystal of high resistant rate to make substrate, at first spreads platinum down at 1200 ℃, makes the atomic concentration of platinum reach 1 * 10
14/ centimetre
3More than, be 800 ℃～1200 ℃ diffusion gold down in temperature then, make monocrystalline silicon reach satisfactory resistivity.The temperature of diffusion gold is high more, and the resistivity that obtains is high more.Under different gold doping temperature, its B value can be adjusted between 3800K～3900K; Through the silicon single crystal of twice diffusion, and be cut into the thermistor that the chip of 1mm * 1mm is made, its room temperature resistance value can be adjusted between hundreds of ohm to tens kilohm.
Accompanying drawing 1 for gold doping, mix the contour structures schematic diagram of platinum single crystal silicon interchangeable thermistor.Wherein, the method for the available chemical nickel plating of double-sided electrode (2) of chip (1) is made.Lead-in wire (4) is the silver-coated copper wire of 0.2mm, is welded on the electrode (2) with scolding tin (3).Entire chip seals with epoxy resin (5).Utilize the resistance-temperature characteristic of the thermistor that above-described method makes can be referring to accompanying drawing 2.Ordinate among the figure (logarithmic coordinates) is the resistance R of thermistor, and unit is ohm (Ω).The abscissa of Fig. 2 below be absolute temperature inverse (1000 * 1/T), marked corresponding celsius temperature scale on the abscissa of Fig. 2 top.As shown in Figure 2, in-50 ℃～100 ℃ warm area scopes, it satisfies R=R fully
0EXP(B/T) exponential relationship, the B value is about 3850K; The deviation profile of element B value is less than ± 0.3% in batches; The deviation profile of 25 ℃ of resistances is less than ± 0.3%; In-50 ℃～100 ℃ warm areas different resistive elements be not more than in the deviation profile of the resistance of same temperature spot ± 2%, can reach the requirement of exchanging in batches, simultaneously, resistive element was through 1000 hours, behind 100 ℃ of high temperature ageings, its resistance deviation is less than ± 0.5%, time constant is 1.5～5(second) dissipation factor reach 1.5～2.5(milliwatt/℃), and practical technique field such as this resistance is easy to manufacture, with low cost, the thermometric that is widely used in industries such as Medical Instruments, food industry, household electrical appliance, temperature control.Because the B value of this resistive element is moderate, interchangeability is good, so it is the ideal element that preparation has the linear modules of linear output.
Embodiment.Adopting resistivity is the P type silicon single crystal of 148 ohmcms, is cut into the wafer of 0.3 millimeters thick, after polishing, cleaning, is coated with source platinum expansion 6 hours under 1200 ℃; The platinum source restrains in 5 with specpure chloroplatinic acid and the pure alcohol of top grade: 95 milliliters ratio is made into.The oxide layer that wafer after the diffusion is removed silicon chip surface with hydrofluoric acid, gold was expanded 2 hours in the source that is coated with under 1200 ℃ again; Jin Yuan restrains in 5 with specpure chlorauride and the pure alcohol of top grade: 95 milliliters ratio is formulated.Wafer after the secondary diffusion carries out chemical nickel plating through after removing oxide layer; The prescription of nickel-plating liquid is nickel chloride 30 grams, inferior sodium phosphate 10 grams, ammonium chloride 50 grams, ammonium citrate 65 grams, deionized water 1000 grams.At last wafer is divided into 1 millimeter * 1 millimeter chip, the silver-coated copper wire of 0.2 millimeter of φ in the soldering of the two sides of chip; Wore out 800 hours 100 ℃ of following temperature, resistance is the element of 5.60K Ω when obtaining 25 ℃ behind mechanical resistance trimming.During encapsulation, being coated with the organic-silicon-modified polyurethane of one deck earlier is PPS glue (component 1 48%, component 2 52%), uses E again
51The type epoxy sealing.E
51Type epoxy resin: polyethylene polyamine=10 gram: the ratio preparation of 0.9 gram, and add 1% alumina powder and an amount of colorant and do filler.The element that makes so all can reach the index that proposes previously through every index test.
Claims (8)
1, a kind of unicrystalline silicon thermistor with negative temperature coefficient of resistance, be as sensitive body by the doped P-type silicon single crystal wafer, two sides at said p type single crystal silicon chip forms electrode with chemically coated nickel method, on formed nickel electrode, constitute as lead-out wire with soldering welding silver-coated copper wire, it is characterized in that doped P-type monocrystalline silicon sensitive body be in p type single crystal silicon, mix platinum and gold doping simultaneously and form have a negative temperature coefficient of resistance, the B value is 3850K, B value deviation profile is less than ± 0.3%, the resistance deviation profile is less than ± 0.3% in the time of 25 ℃, the use warm area is-50 ℃～+ 100 ℃ a silicon single crystal wafer, and unicrystalline silicon thermistor is with epoxy resin enclosed.
2, the manufacture method of the described unicrystalline silicon thermistor of claim 1 comprises:
(1) select for use the p type single crystal silicon of high resistivity to make substrate, under 1200 ℃, mix impurity platinum with the source diffusion method of being coated with, the platinum expansion time is 6 hours, makes pt atom concentration reach 1 * 10
16Centimetre
3More than;
(2) down mix the impurity gold with the source diffusion method of being coated with at 800 ℃～1200 ℃, expanding the golden time is 2 hours, makes the monocrystalline silicon after the doping have negative temperature coefficient of resistance, and the B value is 3800K to 3900K, and resistivity reaches desirable value;
(3) on two sides, form nickel electrode with chemically coated nickel method through the silicon single crystal flake behind twice diffusing, doping;
(4) silicon single crystal flake of Ni plated electrode is divided into 1 millimeter * 1 millimeter chip, and on the chip two sides with soldering welding silver-coated copper wire as lead-out wire;
(5) chip that welds lead-out wire wore out 800 hours down at 100 ℃, adjusted resistance value with mechanical resistance trimming method then;
(6) use epoxy resin enclosed unicrystalline silicon thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN87103486A CN87103486B (en) | 1987-05-07 | 1987-05-07 | Glod platinam containing single crystal silicon interchangeable termistor and its producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN87103486A CN87103486B (en) | 1987-05-07 | 1987-05-07 | Glod platinam containing single crystal silicon interchangeable termistor and its producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN87103486A CN87103486A (en) | 1988-01-13 |
| CN87103486B true CN87103486B (en) | 1988-08-10 |
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ID=4814460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN87103486A Expired CN87103486B (en) | 1987-05-07 | 1987-05-07 | Glod platinam containing single crystal silicon interchangeable termistor and its producing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN87103486B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100378873C (en) * | 2004-11-05 | 2008-04-02 | 中国科学院新疆理化技术研究所 | A zinc-doped negative temperature coefficient single crystal silicon thermistor and its preparation method |
| JP5304822B2 (en) * | 2010-04-28 | 2013-10-02 | 株式会社デンソー | Temperature sensor |
| CN103227106B (en) * | 2013-04-24 | 2016-03-09 | 江阴新顺微电子有限公司 | The process of deposit and doping Pt on semi-conductor silicon chip |
| CN108147790B (en) * | 2017-12-26 | 2021-04-30 | 珠海爱晟医疗科技有限公司 | Medical gold-containing high-precision high-stability NTC (negative temperature coefficient) thermosensitive chip and manufacturing method thereof |
-
1987
- 1987-05-07 CN CN87103486A patent/CN87103486B/en not_active Expired
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| Publication number | Publication date |
|---|---|
| CN87103486A (en) | 1988-01-13 |
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