CN2661700Y - Vacuum rectifying apparatus for extracting high purity metal - Google Patents
Vacuum rectifying apparatus for extracting high purity metal Download PDFInfo
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- CN2661700Y CN2661700Y CN200320115091.0U CN200320115091U CN2661700Y CN 2661700 Y CN2661700 Y CN 2661700Y CN 200320115091 U CN200320115091 U CN 200320115091U CN 2661700 Y CN2661700 Y CN 2661700Y
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 title claims abstract description 25
- 239000002994 raw material Substances 0.000 claims abstract description 32
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000007670 refining Methods 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000010363 phase shift Effects 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 238000004821 distillation Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005292 vacuum distillation Methods 0.000 abstract description 3
- 239000000284 extract Substances 0.000 abstract 1
- 238000009833 condensation Methods 0.000 description 19
- 230000005494 condensation Effects 0.000 description 19
- 150000002739 metals Chemical class 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
一、技术领域1. Technical field
本实用新型涉及一种提炼高纯金属的真空精馏装置,属于冶金行业中的高纯金属元素的冶炼领域。The utility model relates to a vacuum rectification device for refining high-purity metals, which belongs to the field of smelting high-purity metal elements in the metallurgical industry.
二、背景技术2. Background technology
在航天、航海、红外等领域,均需各种高纯金属作为关键部件的基础原材料。如用于红外探测的碲、镉、锌晶片的合成原料碲、镉、锌等。由于器件的工艺及技术要求,这些金属均需5N~7N以上的纯度。而传统冶炼技术所能达到的金属纯度一般在4N左右,以此为原料制成的元器件,其性能远远达不到要求。中国专利00107360.5,91104023.4,99115939.x报道的蒸馏设备提炼的高纯金属,显然是远远不能达到现代技术的要求。目前,高纯金属的生产普遍采用湿法生产工艺,湿法生产工艺的产量小、污染大、产品质量不稳定等缺点。In aerospace, navigation, infrared and other fields, all kinds of high-purity metals are required as the basic raw materials for key components. Such as tellurium, cadmium, zinc, etc., which are synthetic raw materials for tellurium, cadmium, and zinc wafers used for infrared detection. Due to the process and technical requirements of the device, these metals need to have a purity of more than 5N-7N. However, the metal purity that can be achieved by traditional smelting technology is generally around 4N, and the performance of components made of this material is far from meeting the requirements. Chinese patents 00107360.5, 91104023.4, and 99115939.x report that the high-purity metals extracted by the distillation equipment are obviously far from meeting the requirements of modern technology. At present, the production of high-purity metals generally adopts wet production technology, which has disadvantages such as small output, large pollution, and unstable product quality.
三、发明内容3. Contents of the invention
本实用新型的目的是针对现有技术的不足而提供一种提炼高纯金属的真空精馏装置,其特点是通过本精馏装置,可以充分有效除去金属中的杂质,从而获得高纯金属元素。The purpose of this utility model is to provide a vacuum rectification device for refining high-purity metals in view of the deficiencies of the prior art. .
本实用新型的目的由以下技术措施实现:The purpose of this utility model is achieved by the following technical measures:
提炼高纯金属的真空精馏装置由精馏原料釜、冷凝管、扩散泵、机械泵和精馏产品釜组成。精馏原料釜安装在冷凝管的前级,冷凝管安装在精馏产品釜的前级,冷凝管的支管与扩散泵、机械泵连接导通,通过管件和电控线路将各装置和器件连接构成整体。The vacuum rectification device for extracting high-purity metals is composed of a rectification raw material kettle, a condensation pipe, a diffusion pump, a mechanical pump and a rectification product kettle. The rectification raw material kettle is installed at the front stage of the condensation pipe, and the condensation pipe is installed at the front stage of the rectification product kettle. The branch pipe of the condensation pipe is connected to the diffusion pump and the mechanical pump, and the various devices and devices are connected through pipe fittings and electric control lines. constitute a whole.
精馏原料釜上开设加料口和冷凝管接口,釜下开设残料排放口。加料口与排料口分别通过连接管与真空活塞阀连接。冷凝管内装有石英填料,精馏原料釜放在加热炉上的碳化硅管内,碳化硅管外装设加热电阻丝和热电偶,电阻丝与电控线路连接,炉壳与硅管之间装填绝热丝保材料,炉壳加盖后构成精馏原料釜。The rectification raw material kettle is provided with a feeding port and a condenser pipe connection, and a residual material discharge port is provided under the kettle. The feeding port and the discharging port are respectively connected with the vacuum piston valve through connecting pipes. The condensation tube is equipped with quartz packing, the rectification raw material kettle is placed in the silicon carbide tube on the heating furnace, the silicon carbide tube is equipped with a heating resistance wire and a thermocouple, the resistance wire is connected with the electric control circuit, and the furnace shell and the silicon tube are filled with heat insulation Silk protection material, the furnace shell is covered to form a rectification raw material kettle.
冷凝管的一端与精馏原料釜连接,另一端与精馏产品釜连接,支管与扩散泵和机械泵串联连接。One end of the condensation pipe is connected to the rectification raw material tank, the other end is connected to the rectification product tank, and the branch pipe is connected in series with the diffusion pump and the mechanical pump.
精馏产品釜的结构与精馏原料釜雷同,精馏产品釜上只设冷凝管接口和产品出料口,并放在同前结构的加热炉内的碳化硅管内。The structure of the rectification product kettle is the same as that of the rectification raw material kettle. Only the condensation pipe interface and the product outlet are arranged on the rectification product kettle, and they are placed in the silicon carbide tube in the heating furnace with the same structure as before.
精馏原料釜、冷凝管、精馏产品釜以及金属接触的管件均为石英材料制作。The rectification raw material kettle, condensation pipe, distillation product kettle and metal contact fittings are all made of quartz material.
电控线路的数据采集,处理及参数的设定由智能调节仪LU906M和智能移相触发模块XJH-B1的电路放大,转换和移相完成。The data acquisition, processing and parameter setting of the electronic control circuit are amplified, converted and phase-shifted by the circuit amplification, conversion and phase-shifting of the intelligent regulator LU906M and the intelligent phase-shift trigger module XJH-B1.
本实用新型具有如下优点:The utility model has the following advantages:
1、本实用新型是元素真空气相间隙精馏装置,具有产量大、污染小、产品质量高、详见表1所示。1. This utility model is an elemental vacuum gas-phase gap rectification device, which has the advantages of large output, low pollution and high product quality, as shown in Table 1 for details.
2、卧式精馏冷凝管简化了设备的结构,减少了设备损坏率,提高了设备的运行效率,降低产品的成本。2. The horizontal rectification condenser simplifies the structure of the equipment, reduces the damage rate of the equipment, improves the operating efficiency of the equipment, and reduces the cost of the product.
3、装料、出料方便,真空活塞阀、真空泵和精馏系统连接简单,密封性好,易维修,便于操作。3. It is convenient to load and discharge materials, and the vacuum piston valve, vacuum pump and rectification system are connected easily, with good sealing performance, easy maintenance and easy operation.
4、污染小、劳动条件好,真空精馏产生有毒性的蒸气可通过真空系统排放。4. Small pollution, good working conditions, and the toxic steam produced by vacuum distillation can be discharged through the vacuum system.
四、附图说明4. Description of drawings
图1为提炼高纯金属的真空精馏装置框图。Figure 1 is a block diagram of a vacuum distillation device for refining high-purity metals.
图2为真空精馏装置结构示意图。Figure 2 is a schematic diagram of the structure of a vacuum rectification device.
1精馏原料釜,2冷凝管,3扩散泵,4机械泵,5精馏产品釜,6加料管,7冷凝管接口,8残料排放口,9连接管,10活塞阀,11石英填料,12碳化硅管,13电阻丝,14热电偶,15保温材料,16冷凝管接口,17产品出料口。1 Rectification raw material kettle, 2 Condenser pipe, 3 Diffusion pump, 4 Mechanical pump, 5 Rectification product kettle, 6 Feeding pipe, 7 Condenser pipe interface, 8 Residue discharge port, 9 Connecting pipe, 10 Piston valve, 11 Quartz packing , 12 silicon carbide tubes, 13 resistance wires, 14 thermocouples, 15 insulation materials, 16 condensation pipe interfaces, 17 product outlets.
图3为电控线路图。Figure 3 is the electric control circuit diagram.
五、具体实施方式5. Specific implementation
下面通过实施例对本实用新型进行具体描述,但不能理解为对本实用新型保护范围的限制。The utility model is described in detail through the following examples, but it cannot be understood as a limitation to the protection scope of the utility model.
实施例Example
本实用新型具有结构简单,制造方便,如图1~3所示。The utility model has the advantages of simple structure and convenient manufacture, as shown in Figures 1-3.
如图1所示,精馏原料釜1、冷凝管2、扩散泵3、机械泵4和精馏产品釜5组成。精馏原料釜1安装在冷凝管2的前级,冷凝管2安装在精馏产品釜5的前级,冷凝管2的支管与扩散泵3、机械泵4连接导通,通过管件和电控线路将各装置和器件连接构成整体。As shown in Figure 1, the rectification raw material kettle 1, the condensation pipe 2, the diffusion pump 3, the mechanical pump 4 and the rectification product kettle 5 are composed. The rectification raw material kettle 1 is installed in the front stage of the condensation pipe 2, and the condensation pipe 2 is installed in the front stage of the rectification product kettle 5. The branch pipe of the condensation pipe 2 is connected with the diffusion pump 3 and the mechanical pump 4. Lines connect devices and devices to form a whole.
如图2所示,精馏原料釜1上开设加料口和冷凝管接口,釜下开设残料排放口8。加料口与排料口分别通过连接管9与真空活塞阀10连接,冷凝管内装有石英填料11;精馏原料釜放在加热炉上的碳化硅管12内,硅管外装设加热电阻丝,硅管外装设加热电阻丝13和热电偶14并与电控线路连接,硅管与炉壳之间装填绝热丝保温材料15,炉壳加盖后构成精馏原料釜。As shown in Figure 2, the rectification raw material kettle 1 is provided with a feeding port and a condensation pipe interface, and a residual material discharge port 8 is provided under the kettle. The feeding port and the discharging port are respectively connected to the
冷凝管2的一端与精馏原料釜连接,另一端与精馏产品釜5连接,冷凝管2的支管与扩散泵和机械泵串联连接。One end of the condensation pipe 2 is connected to the rectification raw material kettle, and the other end is connected to the distillation product kettle 5, and the branch pipe of the condensation pipe 2 is connected in series with a diffusion pump and a mechanical pump.
精馏产品釜5的结构与精馏原料釜雷同,精馏产品釜上只设冷凝管接口和产品出料口17,并放在同前结构的加热炉内的碳化硅管内。The structure of the distillation product kettle 5 is the same as the rectification raw material kettle, only the condensation pipe interface and the product discharge port 17 are arranged on the rectification product kettle, and placed in the silicon carbide tube in the heating furnace with the previous structure.
精馏原料釜、冷凝管、精馏产品釜以及金属接触的管件均为石英材料制作。The rectification raw material kettle, condensation pipe, distillation product kettle and metal contact fittings are all made of quartz material.
如图3所示,电控线路的数据采集、处理及参数的设定都是通过工业智能调节仪LU906M独立完成,热电偶信号从10、11脚输入,经过内部处理,放大后的控制信号从15、16脚输出,XJH-B1是四川鑫炬矿业资源开发股份有限公司生产出售产品,智能型可控硅移相触发模块,4-20mA的控制电流信号从模块的6、7角输入,经过内部电路放大,转换后的移相触发信号通过3、4角输出,直接驱动可控硅K1、K2使其导通,给负载RL提供控制电流。As shown in Figure 3, the data acquisition, processing and parameter setting of the electronic control circuit are all completed independently through the industrial intelligent regulator LU906M. The thermocouple signal is input from
图中R1为限流电阻,R2与电容C组成阻容吸收回路。In the figure, R 1 is the current limiting resistor, and R 2 and capacitor C form a resistance-capacitance absorption circuit.
提炼高纯金属的精馏装置的工作原理是利用不同金属元素在某一温度下具有不同蒸气压的特性,同时利用冷凝中填料不断凝结其他金属,并同气态金属进行热质交换,使高沸点杂质凝结沉积、回流到精馏原料釜中,低沸点杂质通过真空装置抽除,从而达到分离金属与杂质的目的。精馏高纯金属是在1×10-2~1×10-3Pa真空度下,在高于金属常温熔点的温度、通过一次精馏,严格控制精馏原料釜的温度、冷凝管的温度、精馏产品釜的温度,其温度误差为±0.2%,在辅助真空条件下严格控制回流比而实现。The working principle of the rectification device for refining high-purity metals is to use the characteristics of different vapor pressures of different metal elements at a certain temperature, and at the same time use the filler in the condensation to continuously condense other metals, and exchange heat and mass with gaseous metals to make the high boiling point The impurities are condensed and deposited, and flow back into the rectification raw material kettle, and the low-boiling point impurities are removed by a vacuum device, so as to achieve the purpose of separating metals and impurities. Rectification of high-purity metals is carried out at a vacuum degree of 1×10 -2 ~ 1×10 -3 Pa, at a temperature higher than the melting point of the metal at room temperature, through one rectification, and the temperature of the rectification raw material tank and the temperature of the condenser are strictly controlled. , The temperature of the rectification product kettle, the temperature error is ±0.2%, and it is realized by strictly controlling the reflux ratio under the auxiliary vacuum condition.
表1 本实用新型生产的硒与现有技术生产的硒的分析比较* Table 1 Selenium produced by the utility model and the analysis and comparison of selenium produced by prior art *
*Se规格5N,单位ppm。 * Se specification 5N, unit ppm.
Claims (6)
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| CN200320115091.0U CN2661700Y (en) | 2003-11-27 | 2003-11-27 | Vacuum rectifying apparatus for extracting high purity metal |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302133C (en) * | 2005-09-30 | 2007-02-28 | 中国科学院物理研究所 | High-vacuum in-situ refining apparatus for extracting high-purity material |
| CN106074154A (en) * | 2016-06-02 | 2016-11-09 | 董姝月 | A kind of fire needle therapeutic apparatus |
| CN111979432A (en) * | 2020-09-03 | 2020-11-24 | 武汉拓材科技有限公司 | Novel process for preparing ultra-high-purity indium by tower plate rectification |
-
2003
- 2003-11-27 CN CN200320115091.0U patent/CN2661700Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302133C (en) * | 2005-09-30 | 2007-02-28 | 中国科学院物理研究所 | High-vacuum in-situ refining apparatus for extracting high-purity material |
| CN106074154A (en) * | 2016-06-02 | 2016-11-09 | 董姝月 | A kind of fire needle therapeutic apparatus |
| CN106074154B (en) * | 2016-06-02 | 2019-01-08 | 董姝月 | A kind of fire needle therapeutic apparatus |
| CN111979432A (en) * | 2020-09-03 | 2020-11-24 | 武汉拓材科技有限公司 | Novel process for preparing ultra-high-purity indium by tower plate rectification |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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Owner name: SICHUAN APOLLO SOLAR SCIENCE AND TECHNOLOGY DEVEL Free format text: FORMER OWNER: SICHUAN XINJU MINERAL RESOURCE DEVELOPMENT CO., LTD. Effective date: 20071116 |
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Effective date of registration: 20071116 Address after: 610200 Sichuan city of Chengdu province Shuangliu County Airport Road near No. 72 1-2 Patentee after: Sichuan Appollo solar energy technology development Limited by Share Ltd Address before: 610031, 11 building, elephant building, No. 90, Vanward Road, Sichuan, Chengdu Patentee before: Sichuan Xinju Mineral Industry Resource Development Co., Ltd. |
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Granted publication date: 20041208 Termination date: 20121127 |