CN2195551Y - Multi-function omnibearing reinforcing gravity pouring ion-filling machine - Google Patents
Multi-function omnibearing reinforcing gravity pouring ion-filling machine Download PDFInfo
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- CN2195551Y CN2195551Y CN 94218387 CN94218387U CN2195551Y CN 2195551 Y CN2195551 Y CN 2195551Y CN 94218387 CN94218387 CN 94218387 CN 94218387 U CN94218387 U CN 94218387U CN 2195551 Y CN2195551 Y CN 2195551Y
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- 230000005484 gravity Effects 0.000 title description 2
- 230000003014 reinforcing effect Effects 0.000 title description 2
- 230000002708 enhancing effect Effects 0.000 claims abstract description 22
- 238000001704 evaporation Methods 0.000 claims abstract description 15
- 238000005468 ion implantation Methods 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000005086 pumping Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 230000008020 evaporation Effects 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 238000010891 electric arc Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000523 sample Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000006837 decompression Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 6
- 238000005477 sputtering target Methods 0.000 abstract description 4
- 230000005672 electromagnetic field Effects 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract 3
- 239000011247 coating layer Substances 0.000 abstract 1
- 238000012986 modification Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 239000006200 vaporizer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 229940090044 injection Drugs 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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Abstract
The utility model provides a multi-function omnidirectional deposition reinforced type ion implanter which comprises a work piece chamber of a plasma body (a vacuum chamber) and an ion implanting power supply system which is connected with the work piece chamber of the plasma body, a plasma body generating system, a vacuum-pumping system, a controlling and measuring system, a working gas feeding system and a cooling system. The utility model generates metal plasma bodies by various modes, such as the discharge of a hot wire cathode and radio frequency discharge or the reasonable configuration of an electromagnetic field, etc. The plasma bodies can be effectively limited by the whole-line cusp of permanent magnet walls; the uniform plasma bodies with large volume can be generated by the measures, such as a plurality of hot wires which are reasonably arranged and a gas supply system with multiple holes. The utility model is provided with a sputtering target and/or an evaporating target so the utility model can be used for the improvement of omnidirectional ion implantation; besides, the utility model has the functions of coating layers and enhancing deposition of ions.
Description
The utility model relates to the plasma application device that a kind of material surface modifying is used, specifically a kind of multi-functional comprehensive enhancing appositional pattern ion implanter.
At present, material surface modifying ion implanter commonly used does not all break away from the basic model of ion accelerator.Compile as the ionic fluid utilisation technology of Japan in " ionic fluid utilisation technology " book of council's publication in 1989, the surface modification of introducing mainly (is included transmission workpiece target stand and constitutes, and be equipped with corresponding vacuum-pumping system, power-supply system, cooling system etc. by ion source, analyzing magnet, ion accelerating tube, flood chamber with the main frame of ion implanter.) follow-on surface modification with ion implanter in (seeing patent CN92202269.0 number), though cancelled acceleration tube, magnetic analyzer and ion beam scanning systems in the general implanter, still have ion and draw accelerating system, it draws, quickens and be transported to target chamber with the ion in the discharge plasma, and has the complicated three-dimensional transmission target stand of structure.The constitutional features of this implanter is: plasma source is drawn and accelerating system by ion, and to workpiece, workpiece is positioned on spheric vacuum chamber interior the workpiece target and transmission rig thereof with ion beam sputtering.This implanter is taken out tool pump and system pump down unit by the giving of passage setting of vacuum chamber, and vacuum chamber is evacuated.And vacuum chamber and ion is drawn and accelerating system between be provided with the vacuum plate and cut down, in vacuum chamber, be provided with the measurement target in addition.This class implanter still can't be eliminated the ionic fluid folk prescription that exists in the conventional ion implanter to processing problems, with since bundle plunder and penetrate the material sputter that causes and dosage reservation problem and be difficult to realize processing the complex surface workpiece, and structure is still complicated, and cost is also higher.U.S. Pat 4764394, a kind of plasma source ion implantation apparatus that is bordering on the principle machine is disclosed, only depend on the heated filament shelf depreciation to produce plasma body, the plasma body workpiece chamber (that is vacuum chamber) of this device by the outside of upper and lower wall and sidewall constitute cylindrical, the uniform confinement magnets of upper and lower wall and sidewall, workpiece are positioned on the target platform, the target platform supports and is positioned in the vacuum chamber by supporting walls; Ion implantation power-supply system is introduced by high-voltage connection, high-tension insulator by high-voltage power supply; The plasma generation system is that heated filament electron source, cathode heater constitute; Vacuum-pumping system is made of vacuum pump, pump-line; Workpiece gas feed system is made of the source of the gas induction pipe and whole device passes through ground connection.Whole device only depends on the shelf depreciation of heated filament to produce plasma body, does not possess workpiece coating and ion beam enhanced depositing function, and the device operating parameters monitoring means is incomplete.
The purpose of this utility model is to provide a kind of sedimentary multifunctional material surface modification device of comprehensive ion implantation enhancing that possesses, simple in structure, easy to operate, can realize the modification of complex surface workpiece is handled, and possess the multi-functional comprehensive enhancing appositional pattern ion implanter of monitoring and controlled function.
The purpose of this utility model realizes by following means.
A kind of multi-functional comprehensive enhancing appositional pattern ion implanter is by plasma body workpiece chamber (that is vacuum chamber) and coupled ion implantation power-supply system, the plasma generation system, vacuum-pumping system, control, measuring system, working gas feeder system and cooling system are formed, it is characterized in that plasma body workpiece chamber (that is vacuum chamber) comprises the vacuum-chamber wall of garden cylindricality, permanent magnet is distributed on the vacuum chamber, the inboard of lower wall and the outside of sidewall, RF-coupled electroplax is positioned at the below of the permanent magnet of indoor upper wall, the heated filament negative electrode is uniformly distributed in the vacuum chamber, coating sputter (evaporation) target is distributed in the inboard of the sidewall of vacuum chamber, and indoor high pressure target platform is by the high-tension insulator and the locular wall insulation of indoor lower wall.Ion implantation power-supply system is made up of high-voltage pulse power source, radio frequency generators power supply, vaporizer power supply, arc discharge power supply, heated filament cathode power and sputtering bias-voltage power supply; Its constitutional features is for to be serially connected with heated filament negative electrode two ends with the heated filament cathode power, arc discharge power supply one is terminated at an end, another termination of heated filament negative electrode as the anodic vacuum-chamber wall, the radio frequency generators power supply is connected to RF-coupled electrode, one is terminated at high pressure target platform, the output terminal of pulsed high voltage generator is terminated at high pressure target platform, the other end with vacuum-chamber wall ground connection by high-tension insulator one, and the vaporizer power supply is connected to evaporation target (then not connecing the vaporizer power supply when the evaporation target changes sputtering target into) sputtering bias-voltage power supply one and is terminated at sputtering target, the other end by vacuum-chamber wall ground connection.The plasma generation system is the metallic plasma producer, add the magnetic field pulse guide field coil constitutes.Vacuum-pumping system constitutes by giving the system of taking out, high-vacuum pump group and corresponding valve, pipeline.The high-vacuum pump group is made up of turbomolecular pump and mechanical pump.It enters the digital gas meter that is provided with the control power pack by source of the gas through reducing valve the working gas feeder system, again through regulated valve, enters the porous distributing ring and forms, and can realize that porous supplies gas.
The utility model provides a kind of multi-functional comprehensive enhancing appositional pattern ion implanter.This device can adopt multiple mode to produce plasma body as required, except that passing through the heated filament cathodic discharge, also available radio frequencies discharge or utilize rational electromagnetic field position shape metallic plasma to be imported method such as workpiece target chamber to form needed plasma body is to adapt to the requirement of difference being injected ion modification.This implanter can produce the homogeneous plasma of large volume.Except that adopting full line cusp permanent magnetism wall operative constraint plasma body, also technical measures such as many heated filaments by reasonable Arrangement and porous plenum system are carried out geseous discharge or porous imports metallic plasma, and plasma body is existed
Radial density unevenness＜10% in the 800mm.This machine be equipped with distributed sputtering target and (or) the evaporation target, make this machine except that can carrying out the comprehensive ion implantation modification, also have both coating and ion and strengthen the deposition function.This vacuum-chamber dimensions
500 * 1000mm; Vacuum chamber static pressure＜2 * 10
-4Pa, working gas pressure is 2 * 10
-3Pa～5 * 10
-2Pa; The plasma containment mode is that full linear can be cut permanent magnetism wall constraint (pole surface magnetic field＞0.35T); Plasma density 10
8～10
18cm
-3, its radial density exists
Unevenness＜5% in the 400mm; Electronic temp 1-6ev; Inject ion energy 10～50kev; Negative high voltage impulse density 5～50 μ S; Negative high voltage pulse-repetition 50～1000HZ; Coating deposition 1-5A
0.S
-1
The utlity model has following accompanying drawing.
Fig. 1 is multi-functional comprehensive enhancing appositional pattern ion implanter structure and subsystem synoptic diagram.
Fig. 2 is multi-functional comprehensive enhancing appositional pattern ion implanter structure front view.
Fig. 3 is multi-functional comprehensive enhancing appositional pattern ion implanter structure vertical view.
Fig. 4 is multi-functional comprehensive enhancing appositional pattern ion implanter electric hookup.
Fig. 5 is multi-functional comprehensive enhancing appositional pattern ion implanter working gas feedthrough system synoptic diagram.
Below in conjunction with accompanying drawing the utility model is described in detail.
Embodiment.
As shown in Figure 1, be the structure and the subsystem synoptic diagram of the multi-functional comprehensive enhancing appositional pattern ion implanter of the utility model.It comprises plasma body workpiece chamber (that is vacuum chamber), and coupled ion implantation power-supply system, the plasma generation system, and vacuum-pumping system, control, measuring system 8, working gas feeder system 7 and cooling system are formed.Plasma body workpiece chamber (that is vacuum chamber) volume is
1000 * 1500mm, be distributed in the bottom of the upper wall of columniform vacuum-chamber wall 1, the outside of sidewall by permanent magnet 3, RF-coupled electrode 2 is positioned at the below of indoor upper wall permanent magnet 3, heated filament negative electrode 4 approximate being uniformly distributed in the vacuum chamber, apart from the about 50mm of sidewall, coating sputter (evaporation) target 5 is distributed in the inboard of indoor sidewall, and indoor high pressure target platform 6 is by the high-tension insulator and vacuum-chamber wall 1 insulation of lower wall.Adopted full line cusp magnetic wall to come confining plasma, the Surface field＞0.35T of permanent magnet 3, the plasma discharging volume density is 10
8～10
11Cm
-3Electronic temp 1～5ev,
Density unevenness even＜10% radially in the 800mm.The a plurality of sputters of indoor outfit and (or) evaporation target 5 to be to realize the workpiece coating and to strengthen deposition.Ion implantation power-supply system comprises high-voltage pulse power source 11, radio frequency generators power supply 12, vaporizer power supply 13, arc discharge power supply 14, heated filament cathode power 15 and sputtering bias-voltage power supply 16 compositions.Plasma produces system by metal plasma producer 18, adds magnetic field pulse guide field coil 17 and constitutes.Vacuum-pumping system by giving of the lower wall that is located at vacuum-chamber wall 1 take out pipeline 10, high-vacuum pump group 9 constitutes.Shown in Fig. 2 .3, be multi-functional comprehensive enhancing appositional pattern ion implanter structure front view, vertical view.The plasma body workpiece chamber is supported by support system 28, is provided with push-pull valve 25 in the bottom of plasma body workpiece chamber (also vacuum chamber), can get the part of knocking off easily under the condition that high-pressure pump group 9 continues to move.High-vacuum pump group 9 is by the turbomolecular pump 26 that links to each other with the plasma body workpiece chamber, and forms by the mechanical pump 27 that pipeline links to each other with valve with turbomolecular pump 26.Compare turbomolecular pump 26 startings with oil diffusion pump fast, improved device vacuum tightness, also reduced pollution.Control, measuring system 8 pick and place mouthfuls 23 by the infrared measurement of temperature viewing window 22, the probe measurement that the are located at vacuum-chamber wall 1 top workpiece of holding concurrently, and the bottom is provided with vacuum measurement rule 24, and form by spattering the supervisory control desks 29 that control lead-in wire 35 connects.With lead screen supervisory control desk 29 and main frame are isolated, be in operation and monitor and control by 29 pairs of main frames of supervisory control desk.The monitoring content comprise each power-supply system working parameter, negative high voltage electric current and voltage pulse waveform, amplitude, duty this, frequency and main frame vacuum tightness and workpiece temperature etc.With Lang-mrir probe measurement plasma discharging volume density, temperature and radially, vertically distribute; Measure main frame vacuum tightness with metal nude gauge 24; With the Infrared survey instrument workpiece temperature is monitored.In addition, also utilize material hardness to determine workpiece temperature for relation with the change of tempering temperature.Be provided with four sputters, evaporation power supply leading-in end on the top of plasma body workpiece chamber, and top, lower, outer perimeter are equipped with corresponding water-cooling ring 20, porous distributing ring 21.Water-cooling system is by high pressure water reactance coil 31, and the water-cooling ring 20 that is located at vacuum-chamber wall 1 periphery all effectively cools off the power supply leading-in end of this machine high voltage component such as high pressure target platform 6, vacuum-chamber wall 1, heated filament negative electrode 4 and sputter (evaporation) target 5 realizing.High-tension transformer 32 is input to High-Voltage Insulation platform 33 by high-voltage cable 34, again by high-voltage cable 34 power supplies.As shown in Figure 4, be multi-functional comprehensive enhancing appositional pattern ion implanter electric hookup.Heated filament cathode power 15 is serially connected with the two ends of heated filament negative electrode 4, arc discharge power supply 14 1 is terminated at an end, another termination of heated filament negative electrode 4 as anodic vacuum-chamber wall 1, radio frequency generators power supply 12 1 is terminated at RF-coupled electrode 2, the other end is connected to high pressure target platform 6, the output terminal of pulsed high voltage generator 11 is gone into high pressure target platform 6, the other end with vacuum-chamber wall 1 ground connection by high-tension insulator one termination, steam generator power supply 13 is connected to evaporation (sputter) target 5, and sputtering bias-voltage power supply 16 1 is terminated at sputter (evaporation) target 5, the other end by vacuum-chamber wall 1 ground connection.The pulse negative high voltage is provided by pulsed modulation by DC high-voltage power supply, good, the easy coupling of the pulse waveform of output, and the working parameter variable range is bigger.Pulse height is 10-60kv, pulsewidth 5-50 μ S, and repetition rate 50-1000HZ, all adjustable.As shown in Figure 5, be multi-functional comprehensive enhancing appositional pattern ion implanter working gas feedthrough system synoptic diagram.Working gas feeder system 7, it cuts down 37 by source of the gas 36 by decompression, through being provided with the digital gas meter 38 of control power pack 39, cuts down door 40 by adjusting again, enters the porous distributing ring 21 that is arranged on vacuum-chamber wall 1 periphery and forms.Can realize that porous supplies gas and can regulate and control the working gas flow accurately, at a distance, the operating air pressure in the monitoring vacuum chamber.Be to adapt to splash coating and ion implantation needs, be equipped with two cover plenum systems, promptly the plenum system combination box 30, can carry out pure gas or mixed gas is supplied gas.
The working process of the multi-functional comprehensive enhancing appositional pattern ion implanter of the utility model is as follows:
With pending workpiece carry out necessary give processings (as polishing, degrease processing and cleaning-drying) after, by rational layout workpiece is put into the plasma body workpiece chamber again, be fixed on the high pressure target platform; Closing vacuum chamber; Pass through cold water; Start vacuum-pumping system, when give take out pump and make vacuum chamber reach the certain vacuum degree after, close the system of taking out that gives, open plate and cut down; After the indoor vacuum tightness of vacuum reached required value, in working gas feed-in vacuum chamber, utilizing airflow volume control system that the vacuum chamber operating pressure is transferred to gas need be worth; Start and also to adjust discharge power supply, produce desired plasma body (or directly import plasma body workpiece chamber with metallic plasma); Be added on the workpiece by injecting the pulse negative high voltage of modification requirements, determine required injection modification time according to the implantation dosage of workpiece requirement and plasma body and negative high voltage pulse parameter with certain amplitude, pulse width, frequency.As need workpiece is carried out coating and strengthens deposition, then start sputter or vaporizer power supply (sputter and evaporation target also need carry out surface cleaning processing before work, comprise Discharge Cleaning).After modification disposes, return and respectively organize power supply, close plate and cut down, treat vacuum chamber venting after, pick and place workpiece, repeat said process again.With the multi-functional comprehensive enhancing appositional pattern ion implanter of the utility model the modification processing of material surface has been obtained positive effect, the microhardness of material, wear-resistant and frictional behaviour and biological biocompatibility with material all are greatly improved, and have shown the superiority that can carry out the ion implantation modification processing to the complex surface workpiece.Utilize this device to Cr12MoV, Ti6A14V.M
2.HSS wait multiple material to carry out modification.Their microhardness obviously increases (40～88) %; Frictional behaviour is greatly improved, and the frictional coefficient of Ti6A14V drops to 0.07 by 0.76; Wear resistance also has improvement, and the trace width that rubs of Cr12MoV has reduced 55% under the 50g load; The biological biocompatibility with material of titanium alloy also obviously increases.Carry out comprehensive ion implantation after, ununiformity＜7.2% of the microhardness after the modification of test specimen each point.Modification processing to practical work piece has also obtained similar result, has shown that this machine can carry out the superiority of more uniform comprehensive ion implantation modification to the complex surface workpiece.
Claims (5)
1, a kind of multi-functional comprehensive enhancing appositional pattern ion implanter, it comprises plasma body workpiece chamber (that is vacuum chamber) energy and coupled ion implantation power-supply system, the plasma generation system, vacuum-pumping system, control, measuring system (8), working gas feeder system (7) and cooling system is characterized in that:
(a) plasma body workpiece chamber (that is vacuum chamber) is distributed in the bottom of the upper wall of columniform vacuum-chamber wall 1, the periphery of sidewall by permanent magnet (3), RF-coupled electroplax (2) is positioned at the below of the permanent magnet (3) of indoor upper wall, heated filament negative electrode (4) is uniformly distributed in the vacuum chamber, coating sputter (evaporation) target (5) is distributed in the inboard of indoor sidewall, indoor high pressure target platform (6) is by high-tension insulator and vacuum-chamber wall (1) insulation
(b) ion implantation power-supply system is for to be serially connected with heated filament negative electrode (4) two ends with heated filament cathode power (15), arc discharge power supply (14) one is terminated at an end of heated filament negative electrode (4), another termination is as anodic vacuum-chamber wall (1), radio frequency generators power supply (12) one is terminated at RF-coupled electrode (2), the other end is connected to high pressure target platform (6), the output terminal of pulsed high voltage generator (11) is terminated at high pressure target platform (6) by high-tension insulator one, the other end is with vacuum-chamber wall (1) ground connection, steam generator power supply (13) is connected to evaporation (sputter) target (5), sputtering bias-voltage power supply (16) one is terminated at sputter (evaporation) target (5), the other end is by vacuum-chamber wall (1) ground connection
(c) the plasma generation system adds magnetic field pulse guide field coil (17) by metal plasma producer (18),
(d) vacuum-pumping system is taken out pipeline (10) and high-vacuum pump group (9) formation by giving of the lower wall that is located at vacuum-chamber wall (1).
2, as enhancing appositional pattern ion implanter as claimed in claim 1, it cuts down (37) by source of the gas (36) by decompression to it is characterized in that working gas feeder system (7), through being provided with the digital gas meter (38) of control power pack (39), cut down door (40) by adjusting again, enter and be arranged on peripheral porous distributing ring (21) composition of vacuum-chamber wall (1).
3, enhancing appositional pattern ion implanter as claimed in claim 1, it is characterized in that control, measuring system (8) pick and place mouthful (23) by the infrared measurement of temperature viewing window (22), the probe measurement that are located at vacuum-chamber wall (1) the top workpiece of holding concurrently, the bottom is provided with vacuum measurement rule (24), and the supervisory control desk of establishing in addition (29) is formed.
4, enhancing appositional pattern ion implanter as claimed in claim 1 is characterized in that high-vacuum pump group (9) is made up of turbomolecular pump (26) and mechanical pump (27).
5, enhancing appositional pattern ion implanter as claimed in claim 1 is characterized in that water-cooling system passes through high pressure water reactance coil (31) and constitute with the water-cooling ring (20) that is located on the vacuum-chamber wall (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 94218387 CN2195551Y (en) | 1994-08-15 | 1994-08-15 | Multi-function omnibearing reinforcing gravity pouring ion-filling machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 94218387 CN2195551Y (en) | 1994-08-15 | 1994-08-15 | Multi-function omnibearing reinforcing gravity pouring ion-filling machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2195551Y true CN2195551Y (en) | 1995-04-26 |
Family
ID=33833567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 94218387 Expired - Fee Related CN2195551Y (en) | 1994-08-15 | 1994-08-15 | Multi-function omnibearing reinforcing gravity pouring ion-filling machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2195551Y (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100408720C (en) * | 2005-10-31 | 2008-08-06 | 哈尔滨工业大学 | A method and device for realizing plasma heating and infiltration |
| CN100560786C (en) * | 2006-06-02 | 2009-11-18 | 鸿富锦精密工业（深圳）有限公司 | Sputtering device and sputtering method |
| CN101045989B (en) * | 2007-04-30 | 2010-09-29 | 大连理工大学 | Large-area DC pulsed plasma-based low-energy ion implantation device |
| CN101886248A (en) * | 2009-05-15 | 2010-11-17 | 鸿富锦精密工业（深圳）有限公司 | Sputtering coating device |
| CN102246271A (en) * | 2008-12-12 | 2011-11-16 | 富士胶片株式会社 | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
| CN102345108A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | 300KEV energy probe specially used for ion implanter |
| CN104561910A (en) * | 2015-01-27 | 2015-04-29 | 大连理工常州研究院有限公司 | Plasma enhanced arc ion plating equipment and method for preparing precision coating |
| CN107400855A (en) * | 2016-05-18 | 2017-11-28 | 今钛科技股份有限公司 | Film forming apparatus and method |
| CN111385953A (en) * | 2018-12-28 | 2020-07-07 | 核工业西南物理研究院 | Radio frequency induction coupling linear ion source |
| CN112530606A (en) * | 2020-11-11 | 2021-03-19 | 核工业西南物理研究院 | Automatic impurity gas accelerated mixing system and gas accelerated mixing control method |
-
1994
- 1994-08-15 CN CN 94218387 patent/CN2195551Y/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100408720C (en) * | 2005-10-31 | 2008-08-06 | 哈尔滨工业大学 | A method and device for realizing plasma heating and infiltration |
| CN100560786C (en) * | 2006-06-02 | 2009-11-18 | 鸿富锦精密工业（深圳）有限公司 | Sputtering device and sputtering method |
| CN101045989B (en) * | 2007-04-30 | 2010-09-29 | 大连理工大学 | Large-area DC pulsed plasma-based low-energy ion implantation device |
| CN102246271A (en) * | 2008-12-12 | 2011-11-16 | 富士胶片株式会社 | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
| CN102246271B (en) * | 2008-12-12 | 2013-08-07 | 富士胶片株式会社 | Shaped Anode and Anode Shield Connections for Vacuum Physical Vapor Deposition |
| CN101886248A (en) * | 2009-05-15 | 2010-11-17 | 鸿富锦精密工业（深圳）有限公司 | Sputtering coating device |
| CN101886248B (en) * | 2009-05-15 | 2013-08-21 | 鸿富锦精密工业（深圳）有限公司 | Sputtering coating device |
| CN102345108A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | 300KEV energy probe specially used for ion implanter |
| CN104561910A (en) * | 2015-01-27 | 2015-04-29 | 大连理工常州研究院有限公司 | Plasma enhanced arc ion plating equipment and method for preparing precision coating |
| CN107400855A (en) * | 2016-05-18 | 2017-11-28 | 今钛科技股份有限公司 | Film forming apparatus and method |
| CN111385953A (en) * | 2018-12-28 | 2020-07-07 | 核工业西南物理研究院 | Radio frequency induction coupling linear ion source |
| CN112530606A (en) * | 2020-11-11 | 2021-03-19 | 核工业西南物理研究院 | Automatic impurity gas accelerated mixing system and gas accelerated mixing control method |
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