CN219107703U - Semiconductor processing equipment and induction heater thereof - Google Patents
Semiconductor processing equipment and induction heater thereof Download PDFInfo
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- CN219107703U CN219107703U CN202222981868.7U CN202222981868U CN219107703U CN 219107703 U CN219107703 U CN 219107703U CN 202222981868 U CN202222981868 U CN 202222981868U CN 219107703 U CN219107703 U CN 219107703U
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- 230000006698 induction Effects 0.000 title claims abstract description 102
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 19
- 230000007704 transition Effects 0.000 claims description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 29
- 230000008569 process Effects 0.000 abstract description 9
- 238000009434 installation Methods 0.000 abstract description 7
- 238000004364 calculation method Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 2
- 238000004088 simulation Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- General Induction Heating (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The utility model provides a semiconductor processing equipment and induction heater thereof, sets up induction coil into concentric circle structure, and every round circular coil all has longer concentric circle section, connects through shorter sharp changeover portion between the adjacent circular coil, and concentric circle structure helps realizing the emulation to induction coil, practices thrift calculation time, and can reduce induction coil's preparation degree of difficulty, improves induction coil's preparation precision and process stability. Each round coil is fixed on the supporting device, and a plurality of coil distance fixing blocks are additionally arranged between two adjacent round coils to resist electromagnetic force generated by each round coil in the heating process and keep coil distance stable, so that stability of the induction coil in the plane direction is ensured. The supporting device is fixed on the bottom plate of the reaction cavity by utilizing the height adapting part so as to determine the installation height of the induction coil and keep the position of the induction coil stable in the induction heating process.
Description
Technical Field
The present utility model relates to a semiconductor processing apparatus and an induction heater thereof.
Background
In many semiconductor manufacturing processes, a heater is required to meet the temperature requirement, for example, in the MOCVD process, a heating device is generally used to heat a tray, and the tray is made of a material with good heat conductivity, such as graphite or silicon carbide, so that the temperature of the tray is more easily uniformly distributed. Typically, the substrate is heated by heat conduction, radiation, etc. from a high temperature tray. The common heating devices mainly comprise resistance heating and induction heating, wherein the induction heating has the characteristics of high efficiency, high heating speed, sensitive temperature adjustment, low maintenance cost, suitability for high-temperature conditions and the like, and has great advantages in MOCVD application.
On one hand, the temperature distribution of the graphite tray is very sensitive to the structure and the size of the induction coil, and on the other hand, the induction coil is very easy to deform due to the influence of electromagnetic force in the heating process, so that the temperature uniformity and the process stability are influenced.
The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art.
Disclosure of Invention
The utility model aims to provide a semiconductor processing device and an induction heater thereof, which are convenient for realizing the simulation of an induction coil, prevent the induction coil from deforming in the heating process, keep the turn distance of the induction coil stable and improve the control precision and the technological process stability of the induction coil.
In order to achieve the above object, the present utility model provides an induction heater applied to a semiconductor device, comprising:
the induction coil is formed by connecting a plurality of round coils through a linear transition section, each round coil comprises a start end and a terminal end, a space exists between the start end and the terminal end, adjacent inner round coils and outer round coils are connected through the linear transition section, and two ends of the linear transition section are respectively connected with the start end of the inner round coil and the terminal end of the outer round coil;
the method comprises the steps of,
and the plurality of supporting devices are fixedly connected with the bottom of each round of round coil of the induction coil.
In some embodiments, the induction heater includes a turn-to-turn fixture disposed between adjacent two turn-round coils to maintain a turn-to-turn between the adjacent two turn-round coils.
Optionally, the width of the turn-pitch fixing block is equal to the turn-pitch between two adjacent turn-pitch circular coils.
Preferably, the cross section of the turn distance fixing block is an isosceles trapezoid, the length of a connecting line of the midpoints of two oblique sides of the isosceles trapezoid is equal to the turn distance between two adjacent turn round coils, and the bottom side of the isosceles trapezoid is longer than the top side.
Preferably, bolts are welded at the bottom of each round of circular coil of the induction coil; the supporting device comprises a fixing part, wherein the fixing part is arranged along the radial direction of the induction coil and is provided with a screw hole; the induction coil is fixed through nuts after the bolts penetrate through the screw holes.
Preferably, the supporting device further comprises a connection part connected to one side of the screw hole, wherein the fixing part is fixed to the semiconductor device through the connection part.
Preferably, the connecting portion and the fixing portion are integrally formed and are inverted L-shaped.
In some embodiments, the induction heater further comprises a plurality of height-adapting parts, which are connected in one-to-one correspondence with the connecting parts of the supporting device.
Preferably, a plurality of fixing pins are fixedly arranged on the connecting portion, and a plurality of first pin holes corresponding to the plurality of fixing pins are arranged on the top of the height adapting portion.
Preferably, the bottom of the height adapting part has a plurality of second pin holes.
Preferably, the support means is zirconia or alumina, and the height adapting portion is stainless steel.
Preferably, the straight transition section extends outwardly from the beginning of the inner turn circular coil along the diameter of the induction coil and connects with the end of the outer turn circular coil.
Preferably, the distance between the beginning and the end of each round of the circular coil is 2 mm-5 mm.
Preferably, the induction coil is hollow for circulating a cooling medium.
Preferably, the number of the supporting devices is at least three.
The present utility model also provides a semiconductor processing apparatus comprising:
a reaction chamber;
a rotating shaft disposed in the reaction chamber;
a substrate tray, which is arranged on the rotating shaft and can rotate along with the rotating shaft, wherein the substrate tray is used for bearing one or more substrates;
the semiconductor processing apparatus further comprises the induction heater;
wherein the induction heater is disposed under the substrate tray, and the rotation shaft passes through the center of the circular coil of each turn.
Preferably, the bottom plate of the reaction chamber has a plurality of third pin holes having a size and a position matching those of the second pin holes, and the height adapting part is fixed to the bottom plate of the reaction chamber by mounting pins.
Preferably, the bottom plate of the reaction cavity is provided with a groove, the size and the position of the groove are matched with those of the height adapting part, and the bottom of the height adapting part is embedded in the groove.
According to the utility model, the induction coils are arranged in a concentric circle structure, each circle of circular coils is provided with a longer concentric circle section, the adjacent circular coils are connected through a shorter straight line transition section, the concentric circle structure is beneficial to realizing simulation of the induction coils, the calculation time is saved, the manufacturing difficulty of the induction coils can be reduced, and the manufacturing precision and the process stability of the induction coils are improved. Each round coil is fixed on the supporting device to resist electromagnetic force generated by each round coil in the heating process and keep coil turn distance stable, so that stability of the induction coil in the plane direction is ensured. A plurality of turn distance fixing blocks are additionally arranged between two adjacent turn round coils so as to further resist electromagnetic force generated by each turn of coils in the heating process, prevent the induction coils from deforming in the heating process and keep the turn distances of the induction coils stable. The supporting device is fixed on the bottom plate of the reaction cavity by utilizing the height adapting part so as to determine the installation height of the induction coil and keep the position of the induction coil stable in the induction heating process.
Drawings
Fig. 1 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present utility model.
Fig. 2 is a bottom perspective view of the induction heater of fig. 1.
Fig. 3 is a bottom view of the induction heater of fig. 2.
Fig. 4 is a schematic view of a semiconductor processing apparatus according to another embodiment of the present utility model.
Fig. 5 is a schematic perspective view of the induction coil, the supporting device, the height adapting part and the bottom plate of the reaction chamber in fig. 4.
FIG. 6 is a schematic view showing the mounting connection of the support device, the height adapting section and the reaction chamber bottom plate in FIG. 4.
Detailed Description
The following describes a preferred embodiment of the present utility model with reference to fig. 1 to 6.
In one embodiment of the present utility model, as shown in fig. 1, a semiconductor processing apparatus is provided, which comprises a reaction chamber 1, a rotation shaft 2 is disposed in the reaction chamber 1, a substrate tray 3 is disposed on the rotation shaft 2, the substrate tray 3 can rotate along with the rotation shaft 2, and the substrate tray 3 needs better heat conduction performance, so that graphite is generally used, and silicon carbide is plated on the surface. A plurality of satellite trays 4 are arranged on the substrate tray 3, and the satellite trays 4 are used for bearing substrates 5.
An induction heater is arranged below the substrate tray 3, and the rotating shaft 2 passes through the center of the induction heater. As shown in fig. 1 to 3, the induction heater includes an induction coil 6 and a plurality of supporting means 7 for supporting the induction coil 6.
As shown in fig. 2 and 3, the induction coil 6 is formed by connecting a plurality of turns of a circular coil 61 through a straight transition section 62, and the rotation shaft 2 passes through the center of each turn of the circular coil 61. Each turn of the circular coil 61 comprises a start end and a finish end, wherein the start end and the finish end are disconnected and have a certain interval, so that arc breakdown is prevented from occurring between the start end and the finish end of each turn of the circular coil 61, and the interval between the start end and the finish end is preferably 2 mm-5 mm, so that the influence on coil heating can be reduced while arc breakdown is avoided. The adjacent inner-turn round coils and the adjacent outer-turn round coils are connected through a linear transition section 62, and two ends of the linear transition section 62 are respectively connected with the initial end of the inner-turn round coil and the final end of the outer-turn round coil. Preferably, in order to reduce the influence of the linear transition section 62 on the heating and simulation determination of the coil related parameters, such as the distance between adjacent turn round coils, the linear transition section 62 extends outwards from the start end of the inner turn round coil along the diameter of the inner turn round coil and is connected with the end of the outer turn round coil, so that the length of the linear transition section 62 can be shortened, the control precision can be improved, and the simulation difficulty can be reduced. As shown in fig. 1, a plurality of bolts 8 are welded at the bottom of each round of circular coils 61 in the induction coil 6, the bolts 8 are made of copper or copper alloy, and the bolts 8 are fixedly connected with the supporting device 7, so that the stable turn distance between the round coils 61 is ensured, and the coils are prevented from being deformed.
The number of turns of the circular coils 61 is determined according to the sizes of the substrate tray 3 and the substrate 5, the turn distances between any two adjacent circular coils are not identical, and the turn distances between the circular coils 61 need to be determined according to simulation results, so that the temperature uniformity of the substrate tray 3 is realized.
The induction coil 6 adopts a concentric circle structure, the straight transition section 62 is shorter, and the concentric circle section of the circular coil 61 is longer, so that the accurate simulation of the heating effect of the induction coil is realized, the heating control precision of the induction coil is improved, and the process stability is further improved.
The induction coil 6 may be made of oxygen-free copper, and the induction coil 6 is hollow, and a circulating cooling medium, such as cooling water, is introduced through coil joints 63 and 64 disposed at both ends of the induction coil to prevent the temperature from being too high. The coil connections 63 and 64 also simultaneously provide power to the induction coil. The surface of the induction coil 6 is plated with gold or silver, so that the induction coil 6 is prevented from being excessively high in temperature due to radiation of the substrate tray 3 during heating, and therefore failure, water leakage and damage are prevented.
As shown in fig. 1 to 3, the supporting device 7 is fixedly connected to the bottom of the induction coil 6, the number of the supporting devices 7 is at least three, the supporting device 7 is fixedly connected to the bottom of each round of the circular coil 61 of the induction coil 6, and the supporting device 7 is made of non-conductive ceramic materials such as alumina or zirconia, so that the heat resistance is good and the strength is high.
The supporting device 7 comprises a fixing portion 71 and a connecting portion 72 connected with the fixing portion 71, wherein the fixing portion 71 is arranged along the radial direction of the induction coil 6, and a screw hole is formed in the fixing portion. After the bolts 8 welded at the bottom of the circular coil 61 pass through the screw holes formed in the fixing portion 71, the bolts 8 are locked by nuts 9, so that each turn of the circular coil 61 is fixed on the supporting device 7, electromagnetic force generated by each turn of the coil in the heating process is resisted, coil turn distance is kept stable, and stability of the induction coil 6 in the plane direction is ensured. Preferably, in order to fix the bolt 8 by the nut 9, the connecting portion 72 is connected to one side of the screw hole, and the fixing portion 71 is integrally formed with the connecting portion 72 and has an inverted L shape; in some embodiments, the fixing portion 71 and the connecting portion 72 may be connected by welding, a pin, or the like.
As shown in fig. 4 to 6, in some embodiments of the present utility model, the supporting device 7 further includes a plurality of turn fixing blocks 73, the turn fixing blocks 73 are disposed between two adjacent turn round coils 61, and the width of the turn fixing blocks 73 is equal to the turn distance between the two corresponding adjacent turn round coils 61. Due to the long-term use of the coil, in the process of repeatedly heating and cooling, a certain gap is inevitably generated between the fixing bolt 8 and the screw hole on the supporting device 7, which may affect the stability of the induction heating process, and a plurality of coil pitch fixing blocks 73 are additionally arranged between two adjacent coils 61 to further resist the electromagnetic force generated by each coil in the heating process, so as to prevent the coil from deforming in the heating process and keep the coil pitch stable. In some embodiments of the present utility model, the turn fixing block 73 is fixed to the fixing portion 71, preferably, the turn fixing block 73 is integrally formed with the fixing portion 71, and the cross section of the turn fixing block 73 is an isosceles trapezoid with a lower dimension larger than an upper dimension, the length of a connecting line between two oblique side midpoints of the isosceles trapezoid is equal to the turn distance between two adjacent round coils, the bottom side of the isosceles trapezoid is 0.2 mm-2 mm longer than the top side, preferably, the bottom side of the isosceles trapezoid is 0.4mm longer than the top side; the isosceles trapezoid is equal to or slightly larger than the circular coil 61 in height, so that in the process of locking the bolts 8 by the nuts 9, each circle of circular coil 61 is fastened between the radial adjacent circle distance fixing blocks 73, the coils can be easily embedded during installation, the installation is convenient, and stable fixation can be ensured after the bolts are screwed.
As shown in fig. 4 to 6, in some embodiments of the present utility model, the induction heater further includes a plurality of height adapting parts 10, the number of the height adapting parts 10 is identical to the number of the supporting devices 7, the height adapting parts 10 are connected to the supporting devices 7 in a one-to-one correspondence manner, and the height adapting parts 10 are disposed between the supporting devices 7 and the bottom plate 11 of the reaction chamber 1 to determine the installation height of the induction coil 6 and maintain the stable position of the induction coil 6 during the induction heating.
Specifically, as shown in fig. 6, the height-adapting portion 10 is connected to the connecting portion 72 in a one-to-one correspondence manner, a plurality of fixing pins 721 are fixedly disposed at the lower portion of the connecting portion 72, the height-adapting portion 10 is made of stainless steel, a plurality of first pin holes 101 corresponding to the plurality of fixing pins 721 are disposed at the top of the height-adapting portion 10, the fixing pins 721 are inserted into the corresponding first pin holes 101, and the supporting device 7 is connected to the height-adapting portion 10, so that the installation is convenient and quick. Preferably, a threaded hole is formed on the side wall of the first pin hole 101, and after the fixing pin 721 is inserted into the corresponding first pin hole 101, a screw or a stud is screwed into the threaded hole, so that the screw or the stud abuts against the fixing pin 721, thereby further fixing the supporting device 7 and the height adapting portion 10.
The bottom of the height adapting portion 10 is provided with a plurality of second pin holes 102, the bottom plate 11 of the reaction chamber 1 is provided with a plurality of third pin holes 111, the size and position of the third pin holes 111 are matched with those of the second pin holes 102, the height adapting portion 10 is fixed on the bottom plate 11 of the reaction chamber 1 through mounting pins (not shown), and the height adapting portion 10 and the bottom plate 11 are connected in a pin hole mode, so that accurate positioning while convenient mounting can be ensured.
Further, a plurality of grooves 112 are formed in the bottom plate 11 of the reaction chamber 1, the number of the grooves 112 is consistent with the number of the height-adaptive parts 10, the third pin holes 111 are located in the grooves 112, the size and the position of the grooves 112 are matched with those of the height-adaptive parts 10, the bottoms of the height-adaptive parts 10 are embedded in the grooves 112, and the grooves 112 enable the height-adaptive parts 10 to be positioned and installed more easily.
According to the utility model, the induction coils are arranged in a concentric circle structure, each circle of circular coils is provided with a longer concentric circle section, adjacent circular coils are connected through a shorter straight line transition section, and the concentric circle structure is beneficial to realizing simulation of the induction coils and improving the control progress and process stability of the induction coils. Each round coil is fixed on the supporting device to resist electromagnetic force generated by each round coil in the heating process and keep coil turn distance stable, so that stability of the induction coil in the plane direction is ensured. A plurality of coil distance fixing blocks are additionally arranged between two adjacent coils to further resist electromagnetic force generated by each coil in the heating process, prevent the coils from deforming in the heating process and keep coil distance stable. The supporting device is fixed on the bottom plate of the reaction cavity by utilizing the height adapting part so as to determine the installation height of the induction coil and keep the position of the induction coil stable in the induction heating process.
It should be noted that, in the embodiments of the present utility model, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the embodiments, and do not indicate or imply that the apparatus or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
While the present utility model has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the utility model. Many modifications and substitutions of the present utility model will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the utility model should be limited only by the attached claims.
Claims (18)
1. An induction heater for use in a semiconductor device, comprising:
the induction coil is formed by connecting a plurality of round coils through a linear transition section, each round coil comprises a start end and a terminal end, a space exists between the start end and the terminal end, adjacent inner round coils and outer round coils are connected through the linear transition section, and two ends of the linear transition section are respectively connected with the start end of the inner round coil and the terminal end of the outer round coil;
the method comprises the steps of,
and the plurality of supporting devices are fixedly connected with the bottom of each round of round coil of the induction coil.
2. The induction heater of claim 1, comprising a turn-to-turn fixture disposed between two adjacent turn coils to maintain a turn-to-turn distance between the two adjacent turn coils.
3. The induction heater of claim 2, wherein the width of said turn-to-turn fixed block is equal to the turn-to-turn distance between two adjacent turns of the circular coil.
4. The induction heater of claim 2, wherein the cross section of the turn-pitch fixing block is an isosceles trapezoid, the length of a connecting line of midpoints of two oblique sides of the isosceles trapezoid is equal to the turn pitch between two adjacent turn round coils, and the bottom side of the isosceles trapezoid is longer than the top side.
5. The induction heater of claim 1, wherein a bolt is welded to a bottom of each turn of the circular coil of the induction coil; the supporting device comprises a fixing part, wherein the fixing part is arranged along the radial direction of the induction coil and is provided with a screw hole; the induction coil is fixed through nuts after the bolts penetrate through the screw holes.
6. The induction heater of claim 5, wherein said supporting means further comprises a connection portion connected to one side of said screw hole, wherein said fixing portion is fixed to said semiconductor device by said connection portion.
7. The induction heater according to claim 6, wherein said connecting portion and said fixing portion are integrally formed and have an inverted L shape.
8. The induction heater of claim 5, further comprising a plurality of height-adapting portions, said height-adapting portions being connected in one-to-one correspondence with the connecting portions of said supporting means.
9. The induction heater according to claim 8, wherein a plurality of fixing pins are fixedly provided on the connection portion, and a plurality of first pin holes corresponding to the plurality of fixing pins are provided on the top of the height adapting portion.
10. The induction heater of claim 9, wherein a bottom of said height adapting portion has a plurality of second pin holes.
11. The induction heater of claim 8, wherein said support means is zirconia or alumina and said height adapting portion is stainless steel.
12. The induction heater of claim 1, wherein said straight transition section extends outwardly from a beginning of said inner turn round coil along a diameter of said induction coil and connects with a terminal end of said outer turn round coil.
13. An induction heater according to claim 12, wherein the spacing between the beginning and end of each turn of said circular coil is in the range 2mm to 5mm.
14. The induction heater of claim 1, wherein said induction coil is hollow for circulating a cooling medium.
15. The induction heater of claim 1, wherein said support means is at least three in number.
16. A semiconductor processing apparatus, comprising:
a reaction chamber;
a rotating shaft disposed in the reaction chamber;
a substrate tray, which is arranged on the rotating shaft and can rotate along with the rotating shaft, wherein the substrate tray is used for bearing one or more substrates;
an induction heater according to any one of claims 1 to 14;
wherein the induction heater is disposed under the substrate tray, and the rotation shaft passes through the center of the circular coil of each turn.
17. The semiconductor processing apparatus of claim 16, wherein the bottom plate of the reaction chamber has a plurality of third pin holes having a size and a position matching those of the second pin holes, and the height adapting part is fixed to the bottom plate of the reaction chamber by mounting pins.
18. The semiconductor processing apparatus of claim 17, wherein a floor of the reaction chamber has a recess, the recess being sized and positioned to match the size and position of the height-adjustment portion, a bottom of the height-adjustment portion being embedded within the recess.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222981868.7U CN219107703U (en) | 2022-11-09 | 2022-11-09 | Semiconductor processing equipment and induction heater thereof |
| TW112211500U TWM654372U (en) | 2022-11-09 | 2023-10-25 | Semiconductor processing equipment and induction heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222981868.7U CN219107703U (en) | 2022-11-09 | 2022-11-09 | Semiconductor processing equipment and induction heater thereof |
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| Publication Number | Publication Date |
|---|---|
| CN219107703U true CN219107703U (en) | 2023-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202222981868.7U Active CN219107703U (en) | 2022-11-09 | 2022-11-09 | Semiconductor processing equipment and induction heater thereof |
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| Country | Link |
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| CN (1) | CN219107703U (en) |
| TW (1) | TWM654372U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117431531A (en) * | 2023-10-23 | 2024-01-23 | 无锡先为科技有限公司 | Heating components and semiconductor processing equipment |
| WO2025228032A1 (en) * | 2024-04-28 | 2025-11-06 | 中微半导体设备(上海)股份有限公司 | Semiconductor processing device and induction heating coil thereof |
-
2022
- 2022-11-09 CN CN202222981868.7U patent/CN219107703U/en active Active
-
2023
- 2023-10-25 TW TW112211500U patent/TWM654372U/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117431531A (en) * | 2023-10-23 | 2024-01-23 | 无锡先为科技有限公司 | Heating components and semiconductor processing equipment |
| WO2025228032A1 (en) * | 2024-04-28 | 2025-11-06 | 中微半导体设备(上海)股份有限公司 | Semiconductor processing device and induction heating coil thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM654372U (en) | 2024-04-21 |
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