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CN203774604U - Semiconductor saturable absorber mirror (SESAM) passive mode-locking laser - Google Patents

Semiconductor saturable absorber mirror (SESAM) passive mode-locking laser Download PDF

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CN203774604U
CN203774604U CN201420098712.7U CN201420098712U CN203774604U CN 203774604 U CN203774604 U CN 203774604U CN 201420098712 U CN201420098712 U CN 201420098712U CN 203774604 U CN203774604 U CN 203774604U
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mirror
plano
laser
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sesam
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李港
潘云龙
陈檬
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Beijing University of Technology
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Abstract

本实用新型涉及一种SESAM被动锁模激光器,该锁模激光器该激光器包括单管半导体激光器、自聚焦透镜、激光晶体、平凹反射镜a、平凹反射镜b、平面反射镜、输出镜、SESAM饱和吸收镜;其利用皮秒激光技术,要实现锁模就必须要使得入射到SESAM饱和吸收镜上的能流密度足够高;谐振腔采用Z字型对称放置,谐振腔的光学器件是相互独立的,光学器件放置紧凑,使得激光器结构简单体积小;谐振腔选用SESAM作为锁模元器件,SESAM是半导体可饱和吸收体与反射镜相结合,器件相当简单,具有自启动、稳定性好等优点,使得谐振腔更加简单、紧凑,并能得到稳定的锁模脉冲。

The utility model relates to a SESAM passive mode-locking laser. The mode-locking laser comprises a single-tube semiconductor laser, a self-focusing lens, a laser crystal, a plano-concave reflector a, a plano-concave reflector b, a plane reflector, an output mirror, SESAM saturable absorption mirror; it uses picosecond laser technology, in order to achieve mode locking, the energy flux density incident on the SESAM saturable absorption mirror must be high enough; the resonant cavity is placed symmetrically in a zigzag shape, and the optical devices of the resonant cavity are mutually Independent, the optical device is placed compactly, which makes the laser structure simple and small in size; the resonator uses SESAM as the mode-locking component. SESAM is a combination of semiconductor saturable absorber and mirror. The device is quite simple, with self-starting and good stability, etc. The advantages make the resonant cavity simpler and more compact, and can obtain stable mode-locked pulses.

Description

一种SESAM被动锁模激光器A SESAM Passively Mode-locked Laser

技术领域technical field

本实用新型涉及一种SESAM被动锁模激光器,属于激光锁模技术应用领域。The utility model relates to a SESAM passive mode-locking laser, which belongs to the application field of laser mode-locking technology.

背景技术Background technique

皮秒激光技术是物理学、化学、生物学、光电子学,以及激光光谱学等学科对微观世界进行研究和揭示新的超快过程的重要手段。Picosecond laser technology is an important means for physics, chemistry, biology, optoelectronics, and laser spectroscopy to study the microcosm and reveal new ultrafast processes.

在生命科学领域,皮秒激光可用于矫正视力、检测和准确切除癌症、脑外科手术、治疗动脉瘤、心脏手术、美容、治疗烧伤。In the field of life sciences, picosecond lasers can be used to correct vision, detect and accurately remove cancer, brain surgery, aneurysm treatment, heart surgery, cosmetology, and burn treatment.

在生产制造行业,皮秒激光能够有效地帮助大规模且低成本制造复合材料,可以对金属和其它产业材料进行高质量微加工,激光微细加工应用的需求,促使脉冲与光电子弛豫时间、跃迁时间相似并短至足够冷融的皮秒激光具有巨大的发展前景。In the manufacturing industry, picosecond lasers can effectively help large-scale and low-cost manufacturing of composite materials, and can perform high-quality micromachining on metals and other industrial materials. The needs of laser micromachining applications promote pulse and photoelectron relaxation time and transition. Picosecond lasers with similar times and short enough to be cold enough hold great promise.

在激光测距领域,皮秒激光测距具有高的峰值发射功率,从而具有超远的测程,测量精度高,可以在无合作目标条件下工作等优点。In the field of laser ranging, picosecond laser ranging has the advantages of high peak emission power, ultra-long distance measurement, high measurement accuracy, and the ability to work without cooperative targets.

如上所述,要获得应用如此广泛的皮秒激光,一般通过锁模技术来实现。人们在追求结构简单的同时得到可靠又稳定的锁模脉冲输出,研究焦点集中在主动锁模技术和被动锁模技术上。与主动锁模激光器相比,SESAM被动锁模激光器具有结构简单紧凑、稳定可靠和光束质量好等特点。As mentioned above, in order to obtain such a widely used picosecond laser, it is generally realized by mode-locking technology. People are pursuing a simple structure while obtaining reliable and stable mode-locked pulse output. The research focus is on active mode-locking technology and passive mode-locking technology. Compared with active mode-locked lasers, SESAM passive mode-locked lasers have the characteristics of simple and compact structure, stable and reliable, and good beam quality.

SESAM即半导体饱和吸收镜,是一种将半导体可饱和吸收材料和反射镜结合在一起的光学器件。SESAM锁模比主动锁模获得的脉宽窄,能得到几个皮秒甚至更窄的脉宽。同样与用于被动锁模的可饱和吸收染料比,SESAM不像染料那样需要频繁更换,很大程度上降低了激光器的成本,同时也加强了激光器的可操作性。通过SESAM被动锁模获得的超短脉冲激光,在光纤通讯、医学、超精细微加工、高密度信息存储和记录、时间分辨光谱和非线性光学具有很大应用价值和发展前景。SESAM, or semiconductor saturable absorber mirror, is an optical device that combines semiconductor saturable absorber materials and reflectors. The pulse width obtained by SESAM mode-locking is narrower than that obtained by active mode-locking, and can obtain a pulse width of several picoseconds or even narrower. Also compared with saturable absorbing dyes used for passive mode locking, SESAM does not need to be replaced frequently like dyes, which greatly reduces the cost of lasers and also enhances the operability of lasers. The ultrashort pulse laser obtained by SESAM passive mode-locking has great application value and development prospects in optical fiber communication, medicine, ultra-fine micromachining, high-density information storage and recording, time-resolved spectroscopy and nonlinear optics.

发明内容Contents of the invention

本实用新型的目的在于提供了一种SESAM被动锁模激光器,利用皮秒激光技术,要实现锁模就必须要使得入射到SESAM饱和吸收镜上的能流密度足够高,超过SESAM饱和吸收镜的锁模阈值,同时在此过程中保证振荡光与谐振腔严格共轴,否则会由于增益空间和激光振荡空间的不重合而使激光器的阈值升高甚至不能出光,保证泵浦光与振荡光满足模式匹配,并使得激光晶体与SESAM可饱和吸收镜上的光斑大小合适,满足这些条件就可以实现锁模。The purpose of this utility model is to provide a kind of SESAM passive mode-locking laser, utilize picosecond laser technology, to realize mode-locking just must make the energy flux density incident on the SESAM saturated absorption mirror high enough, exceed the SESAM saturated absorption mirror Mode-locking threshold, and at the same time ensure that the oscillating light and the resonator are strictly coaxial during the process, otherwise the threshold of the laser will increase or even fail to emit light due to the misalignment of the gain space and the laser oscillation space, ensuring that the pumping light and oscillating light meet Mode-matching, and making the laser crystal and SESAM saturable absorbing mirror spot size appropriate, satisfying these conditions can achieve mode-locking.

为实现上述目的,本实用新型采用的技术方案为一种SESAM被动锁模激光器,In order to achieve the above object, the technical solution adopted by the utility model is a SESAM passive mode-locked laser,

该激光器包括单管半导体激光器、自聚焦透镜、激光晶体、平凹反射镜a、平凹反射镜b、平面反射镜、输出镜、SESAM饱和吸收镜。The laser includes a single-tube semiconductor laser, a self-focusing lens, a laser crystal, a plano-concave mirror a, a plano-concave mirror b, a plane mirror, an output mirror, and a SESAM saturable absorption mirror.

锁模激光器的自聚焦透镜置于单管半导体激光器和激光晶体之间;该锁模激光器的谐振腔呈双Z形布置;激光晶体一侧与自聚焦透镜连接;平凹反射镜a4置于激光晶体另一侧,所述光路经激光晶体的中心后射入平凹反射镜a入射前的焦点处;平面反射镜置于光路经平凹反射镜a反射后的焦点处,光路由激光晶体水平射入平凹反射镜a,平凹反射镜a的入射光与反射光之间的夹角范围为0~10°;所述光路经激光晶体、平凹反射镜a、平面反射镜后,呈正Z形结构;与激光晶体、平凹反射镜a、平面反射镜组成的正Z形结构相对称,输出镜、平凹反射镜b、SESAM饱和吸收镜组成反Z形结构;其中,所述平面反射镜、输出镜呈水平布置,输出镜置于光路经平面反射镜反射的水平线上,平面反射镜位于平凹反射镜b入射前焦点处,SESAM饱和吸收镜位于平凹反射镜b反射后焦点处,平凹反射镜b的入射光与反射光之间的夹角范围为0~10°,经平凹反射镜b的折射光水平入射到SESAM饱和吸收镜镜面上;所述正Z形结构、反Z形结构共同构成谐振腔的双Z形对称布置结构。The self-focusing lens of the mode-locked laser is placed between the single-tube semiconductor laser and the laser crystal; the resonator of the mode-locked laser is arranged in a double Z shape; one side of the laser crystal is connected to the self-focusing lens; the plano-concave mirror a4 is placed in the laser On the other side of the crystal, the optical path passes through the center of the laser crystal and then enters the focal point of the plano-concave reflector a; Injected into the plano-concave mirror a, the angle between the incident light and the reflected light of the plano-concave mirror a ranges from 0 to 10°; the optical path is positive after passing through the laser crystal, the plano-concave mirror a and the plane mirror Z-shaped structure; symmetrical to the positive Z-shaped structure composed of laser crystal, plano-concave mirror a, and plane mirror, and the output mirror, plano-concave mirror b, and SESAM saturated absorption mirror form an anti-Z-shaped structure; wherein, the plane The reflector and the output mirror are arranged horizontally, the output mirror is placed on the horizontal line reflected by the plane mirror, the plane mirror is located at the front focus of the plano-concave mirror b, and the SESAM saturated absorption mirror is located at the back focus of the plano-concave mirror b At , the angle between the incident light and the reflected light of the plano-concave mirror b ranges from 0 to 10°, and the refracted light from the plano-concave mirror b is horizontally incident on the mirror surface of the SESAM saturable absorbing mirror; the positive Z-shaped structure , anti-Z-shaped structure together constitute a double-Z-shaped symmetrical arrangement structure of the resonant cavity.

与现有技术相比,本实用新型具有如下有益效果。Compared with the prior art, the utility model has the following beneficial effects.

1、谐振腔采用Z字型对称放置,谐振腔的光学器件是相互独立的,光学器件放置紧凑,使得激光器结构简单体积小。1. The resonant cavity is placed symmetrically in a zigzag shape. The optical components of the resonant cavity are independent of each other. The optical components are placed compactly, which makes the laser structure simple and small in size.

2、谐振腔选用SESAM作为锁模元器件,SESAM是半导体可饱和吸收体与反射镜相结合,器件相当简单,具有自启动、稳定性好等优点,使得谐振腔更加简单、紧凑,并能得到稳定的锁模脉冲。2. The resonator uses SESAM as the mode-locking component. SESAM is a combination of a semiconductor saturable absorber and a mirror. The device is quite simple and has the advantages of self-starting and good stability, making the resonator simpler and more compact, and can Stable mode-locked pulses.

附图说明Description of drawings

图1为SESAM被动锁模激光器谐振腔光路示意图。Figure 1 is a schematic diagram of the resonator optical path of a SESAM passively mode-locked laser.

图中:1、单管半导体激光器,2、自聚焦透镜,3、激光晶体,4、平凹反射镜a,5、平凹反射镜b,6、平面反射镜,7、输出镜,8、SESAM饱和吸收镜。In the figure: 1. Single-tube semiconductor laser, 2. Self-focusing lens, 3. Laser crystal, 4. Plano-concave reflector a, 5. Plano-concave reflector b, 6. Plane reflector, 7. Output mirror, 8. SESAM saturable absorption mirror.

具体实施方式Detailed ways

下面结合附图和实施例对本实用新型作进一步详细说明。Below in conjunction with accompanying drawing and embodiment the utility model is described in further detail.

如图1所示,一种SESAM被动锁模激光器,该激光器包括单管半导体激光器1、自聚焦透镜2、激光晶体3、平凹反射镜a4、平凹反射镜b5、平面反射镜6、输出镜7、SESAM饱和吸收镜8。As shown in Figure 1, a SESAM passive mode-locked laser includes a single-tube semiconductor laser 1, a self-focusing lens 2, a laser crystal 3, a plano-concave mirror a4, a plano-concave mirror b5, a plane mirror 6, an output Mirror 7, SESAM saturable absorption mirror 8.

锁模激光器的自聚焦透镜2置于单管半导体激光器1和激光晶体3之间;该锁模激光器的谐振腔呈双Z形布置;激光晶体3一侧与自聚焦透镜2连接;平凹反射镜a4置于激光晶体3另一侧,所述光路经激光晶体3的中心后射入平凹反射镜a4入射前的焦点处;平面反射镜6置于光路经平凹反射镜a4反射后的焦点处,光路由激光晶体3水平射入平凹反射镜a4,平凹反射镜a4的入射光与反射光之间的夹角范围为0~10°;所述光路经激光晶体3、平凹反射镜a4、平面反射镜6后,呈正Z形结构;与激光晶体3、平凹反射镜a4、平面反射镜6组成的正Z形结构相对称,输出镜7、平凹反射镜b5、SESAM饱和吸收镜8组成反Z形结构;其中,所述平面反射镜6、输出镜7呈水平布置,输出镜7置于光路经平面反射镜6反射的水平线上,平面反射镜7位于平凹反射镜b5入射前焦点处,SESAM饱和吸收镜8位于平凹反射镜b5反射后焦点处,平凹反射镜b5的入射光与反射光之间的夹角范围为0~10°,经平凹反射镜b5的折射光水平入射到SESAM饱和吸收镜镜面上;所述正Z形结构、反Z形结构共同构成谐振腔的双Z形对称布置结构。The self-focusing lens 2 of the mode-locked laser is placed between the single-tube semiconductor laser 1 and the laser crystal 3; the resonant cavity of the mode-locked laser is arranged in a double Z shape; one side of the laser crystal 3 is connected to the self-focusing lens 2; plano-concave reflection The mirror a4 is placed on the other side of the laser crystal 3, and the optical path passes through the center of the laser crystal 3 and then enters the focal point before the incidence of the plano-concave reflector a4; At the focal point, the optical path is horizontally injected into the plano-concave reflector a4 by the laser crystal 3, and the angle between the incident light and the reflected light of the plano-concave reflector a4 is 0-10°; the optical path passes through the laser crystal 3, the plano-concave After mirror a4 and plane mirror 6, it has a positive Z-shaped structure; it is symmetrical to the positive Z-shaped structure composed of laser crystal 3, plano-concave mirror a4, and plane mirror 6. Output mirror 7, plano-concave mirror b5, SESAM The saturable absorbing mirror 8 forms a reverse Z-shaped structure; wherein, the plane mirror 6 and the output mirror 7 are horizontally arranged, and the output mirror 7 is placed on the horizontal line reflected by the plane mirror 6 on the optical path, and the plane mirror 7 is located at the plano-concave reflection The SESAM saturable absorbing mirror 8 is located at the focal point before the incidence of the mirror b5, and the SESAM saturable absorbing mirror 8 is located at the rear focus of the plano-concave mirror b5. The refracted light of mirror b5 is horizontally incident on the mirror surface of the SESAM saturable absorption mirror; the positive Z-shaped structure and the reverse Z-shaped structure together constitute the double Z-shaped symmetrical arrangement structure of the resonant cavity.

整个锁模激光器内共分二类光,即振荡光、谐振腔输出光;在该双Z形对称布置结构中,其中,Ⅰ、Ⅱ、Ⅲ为谐振腔输出光,Ⅳ为谐振腔内振荡光;单管半导体激光器1为泵浦源,平凹反射镜a4、平凹反射镜b5、平面反射镜6、输出镜7、SESAM可饱和吸收镜8构成谐振腔,当谐振腔内存在锁模振荡光时,所述穿过自聚焦透镜2后射入的激光晶体3的射出端带有楔角,会有部分锁模光Ⅰ输出,由于输出镜7朝向谐振腔内一面镀膜,保证所镀膜对振荡光的透过率,在输出镜7背向谐振腔的一面,有延腔内入射光和反射光方向分别输出的锁模光Ⅱ、Ⅲ;平面反射镜6、输出镜7呈水平布置,Ⅳ为谐振腔内振荡光。There are two types of light in the entire mode-locked laser, namely, the oscillation light and the output light of the resonator; in this double Z-shaped symmetrical arrangement structure, among them, I, II, III are the output light of the resonator, and IV is the oscillating light in the resonator ; The single-tube semiconductor laser 1 is the pumping source, the plano-concave mirror a4, the plano-concave mirror b5, the plane mirror 6, the output mirror 7, and the SESAM saturable absorber mirror 8 constitute a resonant cavity. When there is mode-locked oscillation in the resonant cavity When the laser crystal 3 passes through the self-focusing lens 2, the exit end of the laser crystal 3 has a wedge angle, and part of the mode-locked light I will be output. Since the output mirror 7 is coated towards the inner side of the resonant cavity, it is guaranteed that the coated film is opposite to the resonator. For the transmittance of the oscillating light, on the side of the output mirror 7 facing away from the resonant cavity, there are mode-locked lights II and III respectively output along the direction of the incident light and reflected light in the cavity; the plane mirror 6 and the output mirror 7 are arranged horizontally, IV is the oscillating light in the cavity.

所述谐振腔激光晶体3为可以为Nd:YVO4激光晶体、Nd:GdYVO4激光晶体、Nd:YAG激光晶体;其射入端通光面为正方形,垂直于晶体a轴,且镀膜满足对振荡光全反,泵浦光增透其射出端切割一个与射入端成10o的楔角,且表面镀振荡光增透膜。The resonator laser crystal 3 can be Nd:YVO 4 laser crystal, Nd:GdYVO 4 laser crystal, Nd:YAG laser crystal; the light-passing surface of the incident end is square, perpendicular to the crystal a-axis, and the coating meets the requirements for The oscillating light is totally reflected, and the pumping light is anti-reflective. The output end of the pump light is cut at a wedge angle of 10o with the input end, and the surface is coated with an oscillating light anti-reflection film.

平凹反射镜a4和平凹反射镜b5曲率半径相等,且表面镀对振荡光全反膜;平面反射镜6表面镀对振荡光全反膜;输出镜7表面镀对振荡光有一定透过率的反射膜;SESAM饱和吸收镜8表面镀有对振荡光的全反膜,通光面为正方形,置于一镀金铜热沉上;所有元件表面均为水平入射。The flat-concave mirror a4 has the same curvature radius as the flat-concave mirror b5, and the surface is coated with a total reflection film for the oscillating light; the surface of the plane mirror 6 is coated with a total reflection film for the oscillating light; the surface of the output mirror 7 is coated with a certain transmittance for the oscillating light Reflective film; SESAM saturable absorption mirror 8 is coated with a total reflection film for oscillating light, the light-transmitting surface is square, and placed on a gold-plated copper heat sink; the surface of all components is horizontal incidence.

实施例Example

如图1所示,激光器采用端面泵浦方式,端面泵浦阈值低,输出效率高,且容易实现基模运转,光束质量好。激光器泵浦源采用单管半导体激光器1泵浦光波长选用808nm,激光晶体3为Nd:YVO4晶体,Nd3+离子掺杂浓度为0.5at.%通光面为4mm×4mm的正方形,平行于通光方向的晶体长度为5mm,激光晶体3靠近泵浦光的一面(泵浦面)表面镀膜满足对1064nm振荡光全反,808nm泵浦光增透,朝向谐振腔内的表面镀1064nm增透膜,且有一与泵浦面成10o的楔角(以防止标准具效应影响锁模激光脉宽)。平凹反射镜a4和平凹反射镜b5曲率半径R=200mm,凹面镀1064nm全反膜(R>99.8%)。平面反射镜6朝向腔内的表面镀1064nm全反膜,背向谐振腔的表面不镀膜。输出镜7朝向腔内的光学表面镀对1064nm透过率为1.5%的部分反射膜,背向谐振腔的表面不镀膜。SESAM可饱和吸收镜固定在一镀金铜热沉上,在1030nm到1100nm处反射率大于99%,在1064nm处SESAM的饱和吸收系数为2%,饱和通量为50μJ/cm2,饱和恢复时间小于10ps。单管半导体激光器1发出的泵浦光经过自聚焦透镜2后聚焦到激光晶体3内,腔镜a4距离激光晶体泵浦面的距离为130mm,距离平面反射镜6的距离为125mm,振荡光经过平凹反射镜a4后入射到平面反射镜6上,再依次经过输出镜7和平凹反射镜b5的反射,最后聚焦入射到SESAM饱和吸收镜8镜面上,输出镜7距离腔镜b5的距离为125mm,腔镜b5距离SESAM饱和吸收镜8的距离为125mm,要实现锁模就必须要使得入射到SESAM饱和吸收镜上的能流密度足够高,超过SESAM饱和吸收镜的锁模阈值,同时在此过程中保证振荡光与谐振腔严格共轴(否则会由于增益空间和激光振荡空间的不重合而使激光器的阈值升高甚至不能出光),保证泵浦光与振荡光满足模式匹配,并使得激光晶体与SESAM可饱和吸收镜上的光斑大小合适,满足这些条件就可以实现锁模。通过激光晶体3楔角反射的微弱谐振腔内振荡光来检测锁模信号光,在注入泵浦光功率3.8A时,从输出镜输出的两路锁模光总功率为1.3W,实现锁模激光稳定输出。As shown in Figure 1, the laser adopts the end-pumping method, the end-pumping threshold is low, the output efficiency is high, and the fundamental mode operation is easy to achieve, and the beam quality is good. The laser pump source adopts a single-tube semiconductor laser. The pump light wavelength is 808nm. The laser crystal 3 is Nd:YVO 4 crystal, and the Nd 3+ ion doping concentration is 0.5at.%. The crystal length in the direction of light transmission is 5mm. The surface of the laser crystal 3 close to the pump light (pump surface) is coated to meet the total reflection of 1064nm oscillating light, the 808nm pump light is anti-reflection, and the surface facing the resonant cavity is coated with 1064nm increasing light. The membrane is transparent and has a wedge angle of 10o to the pump plane (to prevent the etalon effect from affecting the pulse width of the mode-locked laser). Plano-concave mirror a4 and plano-concave mirror b5 have a radius of curvature R=200mm, and the concave surface is coated with 1064nm total reflection film (R>99.8%). The surface of the plane mirror 6 facing the cavity is coated with a 1064nm total reflection film, and the surface facing away from the resonant cavity is not coated. The optical surface of the output mirror 7 facing inside the cavity is coated with a partial reflection film with a transmittance of 1.5% at 1064nm, and the surface facing away from the resonant cavity is not coated. The SESAM saturable absorbing mirror is fixed on a gold-plated copper heat sink. The reflectivity is greater than 99% at 1030nm to 1100nm, the saturated absorption coefficient of SESAM at 1064nm is 2%, the saturation flux is 50μJ/cm 2 , and the saturation recovery time is less than 10ps. The pumping light emitted by the single-tube semiconductor laser 1 is focused into the laser crystal 3 after passing through the self-focusing lens 2. The distance between the cavity mirror a4 and the pumping surface of the laser crystal is 130 mm, and the distance from the plane mirror 6 is 125 mm. The oscillating light passes through The plano-concave mirror a4 is incident on the plane mirror 6, and then reflected by the output mirror 7 and the plano-concave mirror b5 in turn, and finally focused and incident on the mirror surface of the SESAM saturable absorbing mirror 8. The distance between the output mirror 7 and the cavity mirror b5 is 125mm, the distance between cavity mirror b5 and SESAM saturable absorber mirror 8 is 125mm, in order to achieve mode locking, the energy flux density incident on the SESAM saturable absorber must be high enough to exceed the mode locking threshold of the SESAM saturable absorber, and at the same time During this process, ensure that the oscillating light is strictly coaxial with the resonant cavity (otherwise the threshold of the laser will increase or even fail to emit light due to the misalignment of the gain space and the laser oscillation space), ensure that the pumping light and oscillating light meet the mode matching, and make The laser crystal and the spot size on the SESAM saturable absorber mirror are suitable, and the mode locking can be realized if these conditions are met. The mode-locked signal light is detected by the weak resonant cavity oscillating light reflected by the 3-wedge angle of the laser crystal. When the injected pump light power is 3.8A, the total power of the two mode-locked lights output from the output mirror is 1.3W, realizing mode-locking Laser output is stable.

Claims (3)

1. a SESAM laser with active-passive lock mould, is characterized in that: this laser comprises single-tube semiconductor laser (1), GRIN Lens (2), laser crystal (3), plano-concave speculum a(4), plano-concave speculum b(5), plane mirror (6), outgoing mirror (7), SESAM saturated absorption mirror (8);
The GRIN Lens (2) of mode-locked laser is placed between single-tube semiconductor laser (1) and laser crystal (3); The resonant cavity of this mode-locked laser is two Z-shaped layouts; Laser crystal (3) one sides are connected with GRIN Lens (2); Plano-concave speculum a(4) be placed in laser crystal (3) opposite side, described light path is injected plano-concave speculum a(4 behind the center of laser crystal (3)) focus place before incident; Plane mirror (6) is placed in light path through plano-concave speculum a(4) reflection after focus place, optical routing laser crystal (3) level is injected plano-concave speculum a(4), plano-concave speculum a(4) incident light and reverberation between angular range be 0~10 °; Described light path is through laser crystal (3), plano-concave speculum a(4), after plane mirror (6), be just Z-shaped structure; With laser crystal (3), plano-concave speculum a(4), the just Z-shaped structure of plane mirror (6) composition is symmetrical, outgoing mirror (7), plano-concave speculum b(5), SESAM saturated absorption mirror (8) forms anti-Z-shaped structure; Wherein, described plane mirror (6), outgoing mirror (7) are horizontal arrangement, outgoing mirror (7) is placed in light path on the horizontal line of plane mirror (6) reflection, plane mirror (7) is positioned at plano-concave speculum b(5) incident front focus place, SESAM saturated absorption mirror (8) is positioned at plano-concave speculum b(5) reflection back focus place, plano-concave speculum b(5) incident light and reverberation between angular range be 0~10 °, through plano-concave speculum b(5) refract light glancing incidence to SESAM saturated absorption mirror minute surface; Described just Z-shaped structure, anti-Z-shaped structure form the two Z-shaped structure that is arranged symmetrically with of resonant cavity jointly;
In whole mode-locked laser, be divided into two class light, i.e. oscillation light, resonant cavity output light, this pair of Z-shaped being arranged symmetrically with in structure, wherein, I, II, III are resonant cavity output light, and IV is oscillation light in resonant cavity, single-tube semiconductor laser 1 is pumping source, plano-concave speculum a(4), plano-concave speculum b(5), plane mirror (6), outgoing mirror (7), SESAM saturable absorbing mirror (8) forms resonant cavity, in the time there is locked mode oscillation light in resonant cavity, the ejecting end of the described laser crystal (3) through injecting after GRIN Lens (2) is with the angle of wedge, have the output of part locked mode light I, due to outgoing mirror (7) plated film in resonant cavity, ensure the transmitance of institute's plated film to oscillation light, in outgoing mirror (7) one side of resonant cavity dorsad, have and prolong the locked mode light II that in chamber, incident light and reverberation direction are exported respectively, III, plane mirror (6), outgoing mirror (7) are horizontal arrangement, and IV is oscillation light in resonant cavity.
2. a kind of SESAM laser with active-passive lock mould according to claim 1, is characterized in that: described resonant cavity laser crystal (3) is for being Nd:YVO 4laser crystal, Nd:GdYVO 4laser crystal, Nd:YAG laser crystal; It injects the logical light face of end for square, and perpendicular to crystal a axle, and plated film meets oscillation light is all-trans, one of its ejecting end cutting that pump light is anti-reflection with inject the angle of wedge of holding into 10o, and plated surface oscillation light anti-reflection film.
3. a kind of SESAM laser with active-passive lock mould according to claim 1, is characterized in that: plano-concave speculum a(4) and plano-concave speculum b(5) radius of curvature equates, and plated surface is to the oscillation light film that is all-trans; Plane mirror (6) plated surface is to the oscillation light film that is all-trans; Outgoing mirror (7) plated surface has the reflectance coating of certain transmitance to oscillation light; SESAM saturated absorption mirror (8) surface is coated with the film that is all-trans to oscillation light, and logical light face be square, be placed in a gold plated copper heat sink on; All element surfaces are glancing incidence.
CN201420098712.7U 2014-03-05 2014-03-05 Semiconductor saturable absorber mirror (SESAM) passive mode-locking laser Expired - Lifetime CN203774604U (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103825181A (en) * 2014-03-05 2014-05-28 北京工业大学 SESAM (Semiconductor Saturable Absorber Mirror) passive mode-locking laser
CN107923850A (en) * 2015-05-20 2018-04-17 宽腾矽公司 Pulse laser and bioanalysis system
US11249318B2 (en) 2016-12-16 2022-02-15 Quantum-Si Incorporated Compact beam shaping and steering assembly
US11322906B2 (en) 2016-12-16 2022-05-03 Quantum-Si Incorporated Compact mode-locked laser module
US11466316B2 (en) 2015-05-20 2022-10-11 Quantum-Si Incorporated Pulsed laser and bioanalytic system
US11567006B2 (en) 2015-05-20 2023-01-31 Quantum-Si Incorporated Optical sources for fluorescent lifetime analysis
US11747561B2 (en) 2019-06-14 2023-09-05 Quantum-Si Incorporated Sliced grating coupler with increased beam alignment sensitivity
US11808700B2 (en) 2018-06-15 2023-11-07 Quantum-Si Incorporated Data acquisition control for advanced analytic instruments having pulsed optical sources
US12170433B2 (en) 2020-01-14 2024-12-17 Quantum-Si Incorporated Amplitude-modulated laser

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103825181A (en) * 2014-03-05 2014-05-28 北京工业大学 SESAM (Semiconductor Saturable Absorber Mirror) passive mode-locking laser
CN103825181B (en) * 2014-03-05 2016-07-06 北京工业大学 A kind of SESAM laser with active-passive lock mould
CN107923850A (en) * 2015-05-20 2018-04-17 宽腾矽公司 Pulse laser and bioanalysis system
US11466316B2 (en) 2015-05-20 2022-10-11 Quantum-Si Incorporated Pulsed laser and bioanalytic system
US11567006B2 (en) 2015-05-20 2023-01-31 Quantum-Si Incorporated Optical sources for fluorescent lifetime analysis
US11249318B2 (en) 2016-12-16 2022-02-15 Quantum-Si Incorporated Compact beam shaping and steering assembly
US11322906B2 (en) 2016-12-16 2022-05-03 Quantum-Si Incorporated Compact mode-locked laser module
US11848531B2 (en) 2016-12-16 2023-12-19 Quantum-Si Incorporated Compact mode-locked laser module
US12235463B2 (en) 2016-12-16 2025-02-25 Quantum-Si Incorporated Compact beam shaping and steering assembly
US11808700B2 (en) 2018-06-15 2023-11-07 Quantum-Si Incorporated Data acquisition control for advanced analytic instruments having pulsed optical sources
US11747561B2 (en) 2019-06-14 2023-09-05 Quantum-Si Incorporated Sliced grating coupler with increased beam alignment sensitivity
US12170433B2 (en) 2020-01-14 2024-12-17 Quantum-Si Incorporated Amplitude-modulated laser

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