CN202164386U - Single crystal furnace made of ultra-pure germanium - Google Patents
Single crystal furnace made of ultra-pure germanium Download PDFInfo
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- CN202164386U CN202164386U CN2011202266143U CN201120226614U CN202164386U CN 202164386 U CN202164386 U CN 202164386U CN 2011202266143 U CN2011202266143 U CN 2011202266143U CN 201120226614 U CN201120226614 U CN 201120226614U CN 202164386 U CN202164386 U CN 202164386U
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- fixed
- quartz
- rod
- crucible
- single crystal
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Abstract
本实用新型涉及探测器级的超高纯锗单晶制备的单晶炉。该超高纯锗单晶炉,包括固定装置、加热装置、冷却装置、通气装置以及拉晶装置,所述拉晶装置包括提拉部分以及热熔部分,所述提拉部分上部为籽晶杆,籽晶杆下部固定石英棒,石英棒前端固定籽晶夹具,所述籽晶夹具前端头是锗籽晶;所述热熔部分固定于石英保温环内,其通过坩埚杆固定于下法兰及底座上,坩埚杆顶部固定石英坩埚,所述石英坩埚内盛装多晶锭。本实用新型反应设备清洁度更高,炉体、坩埚及内部零件都用高纯石英件替代现用的石墨材料,且采用高频感应加热方式,避免用电阻石墨直接进行加热产生的杂质污染,降低了拉制产品过程中混杂杂质的可能性,保障了产品的纯度。
The utility model relates to a single crystal furnace for detector-level ultra-high-purity germanium single crystal preparation. The ultra-high-purity germanium single crystal furnace includes a fixing device, a heating device, a cooling device, a ventilation device and a crystal pulling device. The crystal pulling device includes a pulling part and a hot melting part, and the upper part of the pulling part is a seed rod , the lower part of the seed rod is fixed with a quartz rod, and the front end of the quartz rod is fixed with a seed crystal fixture, and the front end of the seed crystal fixture is a germanium seed crystal; the hot-melt part is fixed in the quartz insulation ring, which is fixed to the lower flange through the crucible rod And on the base, a quartz crucible is fixed on the top of the crucible rod, and polycrystalline ingots are contained in the quartz crucible. The reaction equipment of the utility model has a higher cleanliness. The furnace body, crucible and internal parts are all replaced by high-purity quartz materials, and the high-frequency induction heating method is adopted to avoid impurity pollution caused by direct heating of resistance graphite. The possibility of mixing impurities in the process of drawing the product is reduced, and the purity of the product is guaranteed.
Description
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202266143U CN202164386U (en) | 2011-06-30 | 2011-06-30 | Single crystal furnace made of ultra-pure germanium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202266143U CN202164386U (en) | 2011-06-30 | 2011-06-30 | Single crystal furnace made of ultra-pure germanium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202164386U true CN202164386U (en) | 2012-03-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202266143U Expired - Lifetime CN202164386U (en) | 2011-06-30 | 2011-06-30 | Single crystal furnace made of ultra-pure germanium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202164386U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102206859A (en) * | 2011-06-30 | 2011-10-05 | 白尔隽 | Ultrahigh-purity germanium single crystal preparation process and special equipment |
| CN103422163A (en) * | 2013-09-06 | 2013-12-04 | 上海森松压力容器有限公司 | Device and method for growing sapphire single crystals |
| CN105803530A (en) * | 2015-01-19 | 2016-07-27 | 丰田自动车株式会社 | Single crystal production apparatus |
| CN108342770A (en) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | Seedholder and single crystal pulling stove |
| CN112725890A (en) * | 2020-12-25 | 2021-04-30 | 清远先导材料有限公司 | Crystal growth apparatus and crystal growth method |
-
2011
- 2011-06-30 CN CN2011202266143U patent/CN202164386U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102206859A (en) * | 2011-06-30 | 2011-10-05 | 白尔隽 | Ultrahigh-purity germanium single crystal preparation process and special equipment |
| CN102206859B (en) * | 2011-06-30 | 2013-02-13 | 白尔隽 | Ultrahigh-purity germanium single crystal preparation process and special equipment |
| CN103422163A (en) * | 2013-09-06 | 2013-12-04 | 上海森松压力容器有限公司 | Device and method for growing sapphire single crystals |
| CN105803530A (en) * | 2015-01-19 | 2016-07-27 | 丰田自动车株式会社 | Single crystal production apparatus |
| US9982366B2 (en) | 2015-01-19 | 2018-05-29 | Toyota Jidosha Kabushiki Kaisha | Single crystal production apparatus |
| CN108342770A (en) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | Seedholder and single crystal pulling stove |
| CN112725890A (en) * | 2020-12-25 | 2021-04-30 | 清远先导材料有限公司 | Crystal growth apparatus and crystal growth method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHENZHEN UNIV Effective date: 20131030 Owner name: YUNNAN LINCANG XINYUAN GERMANIUM CO., LTD. Free format text: FORMER OWNER: BAI ERJUN Effective date: 20131030 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Bai Erjuan Inventor after: Zheng Zhipeng Inventor after: Gao Dexi Inventor after: Mi Jiarong Inventor after: Sun Huibin Inventor after: Xie Tianmin Inventor after: Zhao Haige Inventor after: Li Xueyang Inventor before: Bai Erjuan |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: BAI ERJUN TO: BAI ERJUN ZHENG ZHIPENG GAO DEXI MI JIARONG SUN HUIBIN XIE TIANMIN ZHAO HAIGE LI XUEYANG Free format text: CORRECT: ADDRESS; FROM: 518060 SHENZHEN, GUANGDONG PROVINCE TO: 677000 LINCANG, YUNNAN PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131030 Address after: 677000 Yunnan province Lincang Linxiang District busy River Street office busy River Community magpie nest Group No. 168 Patentee after: Yunnan Lincang Xinyuan Germanium Co., Ltd. Patentee after: Shenzhen University Address before: 518060 Institute of nuclear technology, Shenzhen University, 3688 Nanhai Road, Shenzhen, Guangdong, Nanshan District, China Patentee before: Bai Erjuan |
|
| CX01 | Expiry of patent term |
Granted publication date: 20120314 |
|
| CX01 | Expiry of patent term |