CN201936892U - Combined type thin film solar energy cell composition structure - Google Patents
Combined type thin film solar energy cell composition structure Download PDFInfo
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- CN201936892U CN201936892U CN 201020625268 CN201020625268U CN201936892U CN 201936892 U CN201936892 U CN 201936892U CN 201020625268 CN201020625268 CN 201020625268 CN 201020625268 U CN201020625268 U CN 201020625268U CN 201936892 U CN201936892 U CN 201936892U
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- 239000010409 thin film Substances 0.000 title claims abstract description 78
- 239000000203 mixture Substances 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 238000005267 amalgamation Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052723 transition metal Inorganic materials 0.000 claims description 8
- 150000003624 transition metals Chemical class 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229920005439 Perspex® Polymers 0.000 claims description 4
- JUGMVQZJYQVQJS-UHFFFAOYSA-N [B+3].[O-2].[Zn+2] Chemical compound [B+3].[O-2].[Zn+2] JUGMVQZJYQVQJS-UHFFFAOYSA-N 0.000 claims description 4
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical group [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005341 toughened glass Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 65
- 239000011241 protective layer Substances 0.000 abstract description 14
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005496 tempering Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000004566 building material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- -1 Vinyl vinyl Chemical group 0.000 description 1
- YBCVMFKXIKNREZ-UHFFFAOYSA-N acoh acetic acid Chemical compound CC(O)=O.CC(O)=O YBCVMFKXIKNREZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- DKQVJMREABFYNT-UHFFFAOYSA-N ethene Chemical compound C=C.C=C DKQVJMREABFYNT-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model relates to a combined type thin film solar energy cell composition structure, which at least comprises a plurality of thin film solar energy cell units and a back panel protective layer, wherein each two units are connected and combined, and the back panel is formed on the thin film solar energy cell units which are connected and combined. Each thin film solar energy cell unit comprises a transparent base board, a first conducting layer, a p-i-n semiconductor layer and a second conducting layer, one surface of the transparent base board is a light irradiating surface, the first conducting layer is formed on the transparent base board, and thus light passing through the transparent base board can be entered into the cell unit; the p-i-n semiconductor layer is formed above the first conducting layer for generating electron hole pair after being irradiated by the light, and thus light current is supplied and the light absorption rate is improved; and the second conducting layer is formed on the p-i-n semiconductor layer, thus electric energy can be taken out from the first conducting layer, and the photoelectric converting rate is improved.
Description
Technical field
The utility model relates to a kind of split mounting type thin-film solar cells and forms structure, refers to a kind of large-area thin-film solar cells composition structure that has especially.
Background technology
Thin-film solar cells can be made on cheap glass, plastic cement or stainless steel substrate in a large number, to produce large-area solar cell, and its technology more can directly import quite ripe TFT-LCD technology, this is one of its advantage, so industry falls over each other to drop into the research in this field invariably.
Basically, the solar cell technology of the relative other types of thin-film solar cells is comparatively simple, has that cost is low, the mass producible advantage.With regard to the composition of thin-film solar cell substrate, consult the existing known thin-film solar cells of Fig. 1 and form structure chart, its basic technology can be through three layers of deposition (deposition), three road laser scribing (scribe) formalities, as described below: at first, on the glass substrate of subscribing size, plate layer of transparent conductive film (Transparent Conductive Oxide with physical gas-phase deposition (PVD) earlier, TCO), it selects light transmission height and the good material of conductivity, as tin indium oxide (ITO), tin oxide (SnO2) or zinc oxide (ZnO) etc.; Then with its preceding electrode pattern (patterning) of infrared laser line definition; So far be first road deposition and line formality.Second stage is the making of main absorbed layer (Active layer), it is generally with plasma-assisted chemical vapour deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) technology grows the hydrogenated amorphous silicon structure (p-a-Si:H/i-a-Si:H/n-a-Si:H) of one deck p-i-n type arrangement on electrode surface, and this main absorbed layer is with the agent structure of p-n semiconductor junction (p-njunction) as light absorption and power conversion.Can carry out the laser scribing step equally after this step, be the main absorbed layer define pattern of producing, so far be second road deposition and line formality.Form the back electrode (backcontact) of aluminium/silver-colored material at last again based on sputter (sputter) technology thereon, and carry out the 3rd road laser scribing and define its back electrode figure.
Recently will there be the solar photoelectric masterplate of building materials function to import structure trunk, and system element not only can be generated electricity, and also be the part of building shell, and be called building integration kenel sunlight electric system (BIPV) and be subjected to extensive attention.It is the solar photoelectric masterplate (PV module) that exploitation has the building materials function, with the architectural design gimmick solar photoelectric masterplate is imported structure trunk then.Therefore BIPV is a kind of passive type (passive) green building design techniques of reacting the natural conditions and social customs of a place weather, it not only has the economic benefit of generating and energy storage, more can and then substitute existing building materials, reduce and just make this, and in conjunction with design techniques such as sunshade processing, daylighting illuminations, to obtain the building energy conservation benefit.Advanced country all has on the development tactics of solar photoelectric and prospective project at present as Japan and Holland and focuses on, so will there be great development potentiality in the field of BIPV.The application of BIPV at present mainly contains the roofing tile, building roof/soundproof wall of sunshade, building courtyard, the oblique top formula roof building in building curtain wall or exterior wall, building, parking lot etc.
With the building glass curtain is example, adopts BIPV to have following advantage: the surface area that, can effectively utilize building.Two, substitute the appearance clad material of building.Three, the building materials that replace roof, metope, window.But four sunshades reduce the building appearance temperature.Five, reduce the monolithic architecture cost.Six, facade is more attractive in appearance etc.For reaching aforementioned purpose, market all exists powerful demand for transparent or opaque large tracts of land BIPV.
Yet as previously mentioned, existing solar photoelectric masterplate technology adopts plasma-assisted chemical vapour deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) technology on electrode surface, grow one deck p-i-n type arrangement hydrogenated amorphous silicon structure (p-a-Si:H/i-a-Si:H/n-a-Si:H) as main absorbed layer (Active layer), (standard size is 1.4x1.1m to the size-constrained film forming size in the PECVD reaction chamber of masterplate
2), technology is initial must be earlier with the chamber vacuum pumping, and making is used to build the large tracts of land solar photoelectric masterplate of integration as need, for example is of a size of 5x5m
2The solar photoelectric masterplate, need research and development large scale pecvd process equipment, to overcome problems such as main absorbed layer film forming inequality (Uniformity), extracting vacuum are difficult for, cost and price are high very, unfavorable market or other large area film solar modules application markets that makes building integrate electro-optical system.
Hereat, be necessary to provide a kind of large tracts of land solar photoelectric masterplate, cheap being applicable to of its cost built applying of integration or other large tracts of land photoelectricity modules.
Summary of the invention
The purpose of this utility model is to provide a kind of thin-film solar cells to form structure; utilize several thin-film solar cells unit amalgamations to become a large-area thin-film solar cells, and above the thin-film solar cells unit of several amalgamations, form a large tracts of land backboard protective layer.Known film solar battery structure from bottom to top comprises: substrate, first conductive layer, P-I-N layer, second conductive layer and backboard protective layer; the utility model then is to form several thin-film solar cells unit earlier; under its structure and on comprise: substrate, first conductive layer, P-I-N layer, second conductive layer interconnect amalgamation with several unit again.A bonding large tracts of land backboard protective layer on the thin-film solar cells unit of amalgamation; use and utilize original undersized pecvd process to produce large-area thin-film solar cells; reduce producing the area battery cost effectively, to be applied to the utilization that building or agricultural greenhouse etc. can improve energy regeneration and reclaim circulation.
Another purpose of the utility model is by selecting several transparent or opaque small size thin-film solar cells unit of amalgamation, forming transparent or opaque large tracts of land split mounting type thin-film solar cells masterplate.It is by: above the main absorbed layer of p-i-n layer of each small size thin-film solar cells unit, form transparency conducting layer, it can be transparency conductive electrode or single transition metal of thin layer or aluminium one of them.
The utility model again another purpose be by on large tracts of land split mounting type thin-film solar cells module in conjunction with transparent large tracts of land tempering glass, solve large tracts of land tempering glass and be difficult for being cut into undersized problem.
To achieve these goals; form structure according to a kind of split mounting type thin-film solar cells that the utility model proposes; at least comprise: several thin-film solar cells unit; it between each unit the amalgamation that links to each other; and a backboard protective layer, it is formed on this thin-film solar cells unit of the amalgamation that links to each other.Wherein aforementioned each thin-film solar cells unit comprises: a transparency carrier, the one side of this transparency carrier are the irradiation faces; One first conductive layer, it is to be formed on this transparency carrier, with so that the light by transparency carrier enters battery unit inside; One p-i-n semiconductor layer, it is to be formed at this first conductive layer top, in order to produce electron hole pair (or be called electronics electricity hole to) after being subjected to rayed, photoelectric current to be provided and to increase absorptivity; And one second conductive layer, it is formed on this p-i-n semiconductor layer, in order to take out electric energy and the efficient that promotes opto-electronic conversion with aforementioned first conductive layer.
The utility model also can be applied to the following technical measures to achieve further.
Aforesaid split mounting type thin-film solar cells is formed structure, and wherein said first conductive layer is a transparency conductive electrode, and second conductive layer is transparency conductive electrode or single transition metal or aluminium one of them.
Aforesaid split mounting type thin-film solar cells is formed structure, and the material of wherein said transparent back panel is a tempered glass.
Aforesaid split mounting type thin-film solar cells is formed structure, and the material of wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
Aforesaid split mounting type thin-film solar cells is formed structure, and wherein said transition metal is silver or nickel, and wherein Yin thickness is between 3nm～25nm.
Aforesaid split mounting type thin-film solar cells is formed structure, and wherein said first conductive layer and second conductive layer are zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO).
The utility model compared with prior art has tangible advantage and beneficial effect.By technique scheme, split mounting type thin-film solar cells of the present utility model is formed structure, has following advantage at least:
One, split mounting type thin-film solar cells of the present utility model is formed structure, reduces producing the area battery cost effectively, to be applied to the utilization that building or agricultural greenhouse etc. can improve energy regeneration and reclaim circulation.
Two, split mounting type thin-film solar cells of the present utility model is formed structure, can form large-area structure.
Three, split mounting type thin-film solar cells of the present utility model is formed structure, in conjunction with transparent large tracts of land tempering glass, solves large tracts of land tempering glass and is difficult for being cut into undersized problem on large tracts of land split mounting type thin-film solar cells module.
Description of drawings
Fig. 1 is that existing known thin-film solar cells is formed structure chart.
Fig. 2 is that the split mounting type thin-film solar cells of the utility model one specific embodiment is formed structure chart.
Fig. 3 is the split mounting type thin-film solar cells top view of the utility model one specific embodiment.
Fig. 4 is the split mounting type thin-film solar cells top view of the utility model one specific embodiment
Fig. 5 is the three-dimensional view of the thin-film solar cells of the utility model one specific embodiment.
Fig. 6 is that the split mounting type thin-film solar cells of another specific embodiment of the utility model is formed structure chart.
100,200,300,600: split mounting type thin-film solar cells unit
101,201,301,601: transparency carrier
102,202,302: the first conductive layers
103,203,303,602:p-i-n semiconductor layer
104,204,304,603: the second conductive layers
400: the backboard protective layer
Embodiment
For further setting forth the utility model is to reach technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, describe in detail forming its embodiment of structure, step, structure, feature and effect thereof according to the split mounting type thin-film solar cells that the utility model proposes.
Seeing also Fig. 2, is that the split mounting type thin-film solar cells of the utility model first embodiment is formed structure.The utility model split mounting type thin-film solar cells is formed structure; at least comprise: several have the thin-film solar cells unit 100,200,300 of same composition structure; it between each unit the amalgamation that links to each other; and a backboard protective layer 400, it is formed on the thin-film solar cells unit 100,200,300 of the amalgamation that links to each other.It should be noted that split mounting type thin-film solar cells unit 100,200,300 only is the explanation of example formula, optionally can increase or reduce the thin-film solar cells element number of continuous amalgamation.Each unit comprises: a transparency carrier 101,201,301, and the one side of this substrate is the irradiation face; One first conductive layer 102,202,302, it is to be formed at this transparency carrier 101,201,301 tops, with so that inject the p-i-n semiconductor layer of inside battery, and take out electric energy and the efficient that promotes opto-electronic conversion by the light of transparency carrier 101,201,301.One p-i-n semiconductor layer 103,203,303 is used so that by transparency carrier generation electron hole pair, photoelectric current to be provided and to increase absorptivity; And one second conductive layer 104,204,304, it is to be formed at p-i-n semiconductor layer 103,203,303 tops, in order to take out electric energy and the efficient that promotes opto-electronic conversion.The utility model further forms a large tracts of land backboard protective layer above second conductive layer 104,204,304; formed split mounting type thin-film solar cells is formed structure and is had than large tracts of land compared to existing known small size thin-film solar cells (for example 1.4x1.1m2), for example 5x5m
2, its below view please refer to Fig. 2, and it shows a plurality of thin-film solar cells unit and interconnects and become a large area film solar battery cell; With reference to Fig. 3, it shows the top view of the thin-film solar cells of the utility model one specific embodiment, in addition with reference to Fig. 5, shows the three-dimensional view that it shows the thin-film solar cells of the utility model one specific embodiment.
The method that forms a large tracts of land backboard protective layer above second conductive layer 104,204,304 is earlier at second conductive layer, 104,204,304 coating one deck solar cell packaging EVA films, covering one deck large tracts of land backboard protective layer on the PVB glue-line again.Use the bonding large tracts of land backboard of EVA glue-line protective layer to be with the advantage of a plurality of thin film solars of the amalgamation that links to each other; the EVA film is a kind of sticking film of thermosetting based on EVA (abbreviation of Ethylene ethene, Vinyl vinyl, Acetate acetate); be used to be placed in the middle of the doubling glass; before heating, be vaporific; there is the lines of relief on the two sides; after heating, become fully transparent and very strong adhesion strength is arranged, very strong stability is also arranged under harsh condition.
In another specific embodiment of the utility model; backboard protective layer of the present utility model can be taked with the bonding large tracts of land tempering glass (Tempered Glass) of EVA glue-line as the backboard protective layer; can be used as the glass curtain of building; reach energy-conservation effect; and, should belong to ideal because the EVA glue-line has excellent soundproof effect with the bonding glass of PVB for high-frequency sound wave compared to tradition.In addition, because of the bonding large tracts of land tempering glass of EVA film can be resisted high temperature, moisture, ultraviolet ray or the like, and can use out of doors for a long time, also can be used as the roof Material of agricultural greenhouse, its light transmission is highly suitable for greenhouse or organic agriculture cultivation, and has power benefit.
In the another specific embodiment of the utility model, have the height light transmission features for making thin-film solar cells of the present utility model, aforementioned second conductive layer can be transparency conductive electrode.Transparency conductive electrode mainly can be divided into the Two kind, and a kind of is metallic film, another kind be transparent conductive oxide (Transparentconductiveoxide, TCO).
With TCO, at present embodiment, this first transparent conductive oxide can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron transparent conductive oxides such as (ZnO), because comparing with the exciton bind energy (GaN 25meV) of gallium nitride, zinc oxide exciton bind energy (60meV) at room temperature exceeds a lot, therefore and bigger exciton bind energy is represented the luminous efficiency of Geng Gao, is the fine material section of photoelectric cell active layers.Above-mentioned transparent conductive oxide has lower resistivity, in order to do making the penetrance that increases light.
With metallic film, can be single transition metal or aluminium one of them, this transition metal for example is silver or nickel or the like, with silver is example, the thickness of silver is between 3nm～25nm, and the characteristic of silver has good light transmittance and because of silver-colored tool reduces the characteristic of resistance value, therefore has favorable conductive character at visible-range, preferably, Yin thickness is between 3nm～5nm, 10nm～15nm and 20nm～25nm.Because of the very thin thickness of silver, the integral thickness of thin-film solar cells is reduced in addition.Replace existing known nesa coating by translucent conductive metal layer, increase photosphere and penetration length effectively, and increase reflective character, to increase whole conversion efficiency.
In the present embodiment, the material of this transparency carrier can use general glass, quartz, perspex, sapphire substrate or transparent flexual material or the like.
When this transparency carrier 101,201,301 irradiation face is subjected to solar light irradiation, then light is by penetrating this transparency carrier 101,201,301 and the first transparent conductive layer 102,202,302 enter to this p-i-n semiconductor layer 103,203,303, solar light irradiation is connect on the face in pn, in order to do making the part electronics because of having enough energy, leave atom and become free electron, lose the atom of electronics thereby produce the hole, and see through the p N-type semiconductor N and the n N-type semiconductor N attracts hole and electronics respectively, positive electricity and negative electricity are separated, connect the face two ends thereby produce potential difference at pn, again by first conductive layer 102,202,302 and second conductive layer 104,204,304 connect a circuit (figure does not show), make electronics be able to by, and combine once more with the hole that connects the face other end at pn, just produce electric current, again by this first conductive layer 102,202,302 and second conductive layer 104,204,304 take out electric energy, to convert available power to, and because of second conductive layer 104 of the present utility model, 204,304 can be transition metal for example is silver or nickel etc., it has good electrical conductivity, and good light transmittance is arranged for making at visible-range, the utility model first conductive layer 102,202,302 and second conductive layer 104,204,304 thickness is moderate, causes conductance to descend to avoid producing discontinuous island film.
Seeing also Fig. 6, is the composition structure chart of the split mounting type thin-film solar cells unit 600 of another embodiment of the utility model, comprises at least: a transparency carrier 601, the one side of this transparency carrier 601 are irradiation faces; One p-i-n semiconductor layer 602 is the tops that are formed at this this transparency carrier 601, in order to produce electron hole pair, electric current to be provided and to increase absorptivity; And several second conductive layers 603, be the top that is formed at p-i-n semiconductor layer 602, in order to take out electric energy and the efficient that promotes opto-electronic conversion.
The utility model further forms a large tracts of land backboard protective layer above second conductive layer 104,204,304; formed split mounting type thin-film solar cells is formed structure and is had than large tracts of land compared to existing known small size thin-film solar cells (for example 1.4x1.1m2), for example 5x5m
2, its below view please refer to Fig. 2, and it shows a plurality of thin-film solar cells unit and interconnects and become a large area film solar battery cell; The top view please refer to Fig. 3, and it is shown as a large-area thin-film solar cells.
Though the utility model discloses as above with preferred embodiment, so be not in order to limit the scope that the utility model is implemented, the simple equivalent of doing according to claims of the present utility model and description changes and modification, still belongs to the scope of technical solutions of the utility model.
Claims (10)
1. a split mounting type thin-film solar cells is formed structure, it is characterized in that comprising at least:
Several thin-film solar cells unit are the amalgamation that links to each other between each unit; And
One backboard, its area form on these thin-film solar cells unit of the amalgamation that links to each other greater than the area of aforementioned each thin-film solar cells unit;
Wherein aforementioned each thin-film solar cells unit comprises:
One transparency carrier, the one side of this transparency carrier are the irradiation faces;
One first conductive layer, it is transparency conductive electrode and is formed on this transparency carrier;
One p-i-n semiconductor layer, it is to be formed at this first conductive layer top; And
One second conductive layer, it is formed on this p-i-n semiconductor layer.
2. split mounting type thin-film solar cells as claimed in claim 1 is formed structure, it is characterized in that wherein said second conductive layer is one of them of transparency conductive electrode or single transition metal or aluminium.
3. split mounting type thin-film solar cells as claimed in claim 1 is formed structure, and the material that it is characterized in that wherein said backboard is a tempered glass.
4. split mounting type thin-film solar cells as claimed in claim 2 is formed structure, and the material that it is characterized in that wherein said backboard is a tempered glass.
5. split mounting type thin-film solar cells as claimed in claim 1 is formed structure, and the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
6. split mounting type thin-film solar cells as claimed in claim 2 is formed structure, and the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
7. split mounting type thin-film solar cells as claimed in claim 2 is formed structure, it is characterized in that wherein said transition metal is silver or nickel.
8. split mounting type thin-film solar cells as claimed in claim 7 is formed structure, and the thickness that it is characterized in that wherein said silver is between 3nm～25nm.
9. split mounting type thin-film solar cells as claimed in claim 1 is formed structure, it is characterized in that wherein said first conductive layer is zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron.
10. split mounting type thin-film solar cells as claimed in claim 2 is formed structure, it is characterized in that wherein said first conductive layer and second conductive layer are zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020625268 CN201936892U (en) | 2010-11-24 | 2010-11-24 | Combined type thin film solar energy cell composition structure |
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| CN 201020625268 CN201936892U (en) | 2010-11-24 | 2010-11-24 | Combined type thin film solar energy cell composition structure |
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| CN201936892U true CN201936892U (en) | 2011-08-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479843A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Split type film solar battery composition structure |
| CN103000101A (en) * | 2011-09-16 | 2013-03-27 | 吉富新能源科技(上海)有限公司 | Light-emitting solar battery indicator applied to highway pavement |
| CN106817838A (en) * | 2017-03-28 | 2017-06-09 | 西华大学 | A kind of Upper conductive layer of net substrate |
-
2010
- 2010-11-24 CN CN 201020625268 patent/CN201936892U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479843A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Split type film solar battery composition structure |
| CN103000101A (en) * | 2011-09-16 | 2013-03-27 | 吉富新能源科技(上海)有限公司 | Light-emitting solar battery indicator applied to highway pavement |
| CN106817838A (en) * | 2017-03-28 | 2017-06-09 | 西华大学 | A kind of Upper conductive layer of net substrate |
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