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CN201925936U - Cyclone oxygen-synthesizing combustion device for treating waste gas of semiconductor process - Google Patents

Cyclone oxygen-synthesizing combustion device for treating waste gas of semiconductor process Download PDF

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CN201925936U
CN201925936U CN2010206328445U CN201020632844U CN201925936U CN 201925936 U CN201925936 U CN 201925936U CN 2010206328445 U CN2010206328445 U CN 2010206328445U CN 201020632844 U CN201020632844 U CN 201020632844U CN 201925936 U CN201925936 U CN 201925936U
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waste gas
gas
chamber
exhaust
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冯五良
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Orient Service Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本实用新型涉及一种处理半导体制程废气的旋风式合氧燃烧装置,在一入口头座内配置一废气通道,连通于外界一废气供应端与入口头座下方一燃烧区之间,导引废气进入燃烧区,且废气通道外围间隔设置两个隔板,该废气通道外围与所述隔板之间形成一点火腔室,且所述隔板上分别形成连通外界一燃气供应端、点火腔室与燃烧区的复数斜孔,导引燃气经由点火腔室漩涡进入燃烧区,期间接受点火腔室内一点火器点燃而生成漩涡火焰,以燃烧进入燃烧区的废气。

Figure 201020632844

The utility model relates to a cyclone-type oxygen combustion device for treating semiconductor process waste gas. An exhaust gas channel is arranged in an inlet head and is connected between an external waste gas supply end and a combustion zone below the inlet head to guide the waste gas. Entering the combustion zone, two partitions are arranged on the periphery of the exhaust gas channel. An ignition chamber is formed between the periphery of the exhaust gas channel and the partitions, and a gas supply end and an ignition chamber are respectively formed on the partitions to communicate with the outside world. A plurality of inclined holes in the combustion zone guide the gas into the combustion zone through the vortex of the ignition chamber. During this period, it is ignited by an igniter in the ignition chamber to generate a vortex flame to burn the exhaust gas entering the combustion zone.

Figure 201020632844

Description

处理半导体制程废气的旋风式合氧燃烧装置Cyclone oxygen combustion device for treating waste gas from semiconductor process

技术领域technical field

本实用新型涉及一种旋风式合氧燃烧装置,特别是关于一种处理半导体制程废气的入口头座,并涉及该入口头座内部的废气通道、点火腔室和导引废气用的斜孔。The utility model relates to a cyclone-type oxygen-combustion device, in particular to an inlet head seat for treating semiconductor process waste gas, and relates to a waste gas passage, an ignition chamber and an oblique hole for guiding waste gas inside the inlet head seat.

背景技术Background technique

在半导体的生产制造过程中,会产生许多具有毒性、腐蚀性及易燃性的制程废气,为了避免该废气污染环境而造成公害的可能性,必须先将该废气内的有害物质予以过滤去除之后,才能将无害的废气排放至外界大气。In the manufacturing process of semiconductors, many toxic, corrosive and flammable process waste gases will be produced. In order to avoid the possibility of the waste gas polluting the environment and causing public nuisance, the harmful substances in the waste gas must be filtered out first. , in order to discharge harmless exhaust gas to the outside atmosphere.

且知,传统的半导体制程废气的处理方式,是将该制程废气注入废气处理槽内,先接受废气处理槽内的高温火焰燃烧,而形成高温废气,迫使高温废气中有害物质接受高温催化,而分解成无害的物质,随后凭借废气处理槽内部的洗涤水将高温废气中可溶于水的有害物质加以融解,而使高温废气转换成为无害的气体,同时冷却该高温废气,以利于排放至外界大气中,而不会造成环境的污染。It is known that the traditional method of treating waste gas from semiconductor manufacturing process is to inject the waste gas from the process into the waste gas treatment tank, and first accept the high-temperature flame combustion in the waste gas treatment tank to form high-temperature waste gas, forcing the harmful substances in the high-temperature waste gas to undergo high-temperature catalysis, and It is decomposed into harmless substances, and then the harmful substances soluble in water in the high-temperature waste gas are melted by the washing water inside the waste gas treatment tank, so that the high-temperature waste gas is converted into a harmless gas, and the high-temperature waste gas is cooled to facilitate discharge To the outside atmosphere without causing environmental pollution.

上述传统的废气处理槽的顶部一般都具有一入口头座(inlet head),该入口头座通常能够同时输入废气及含氧的燃气,以混合该废气与含氧燃气,并经由点燃该含氧燃气而生成高温火焰,用以燃烧该废气。The top of the above-mentioned traditional exhaust gas treatment tank generally has an inlet head seat (inlet head), which can usually input exhaust gas and oxygen-containing gas at the same time, to mix the exhaust gas and oxygen-containing gas, and ignite the oxygen-containing gas. The gas is used to generate a high-temperature flame to burn the exhaust gas.

目前市面上已存在有多款上述利用高温火焰及洗涤水处理半导体制程废气的方法,举如中国台湾第482038号及第570146号专利案,主要是利用废气处理槽顶部的入口头座产生高温火焰,对外界废气供应端输送进入该入口头座内部的制程废气先行燃烧,并将洗涤水以喷洒成水滴或溢流成水幕的方式散布于入口头座下方的废气处理槽内,以融解废气中的有害物质。At present, there are a variety of methods on the market that use high-temperature flames and washing water to treat waste gas from semiconductor manufacturing processes, such as Taiwan Patent No. 482038 and No. 570146, which mainly use the inlet head seat on the top of the waste gas treatment tank to generate high-temperature flames , the process exhaust gas transported from the external exhaust gas supply end into the inlet head seat is first burned, and the washing water is sprayed into water droplets or overflowed into a water curtain in the exhaust gas treatment tank under the inlet head seat to melt the exhaust gas harmful substances in.

然而,上述中国台湾第482038号及第570146号专利案中的制程废气是以直线路径通过该入口头座及废气处理槽;换言之,该废气是以直线路径通过高温火焰及洗涤水,导致该废气与高温火焰及洗涤水相互反应的时间难以提增的问题,如此容易造成废气中有害物质未完全燃烧殆尽的状况,也容易造成废气中有害物质未完全融解于洗涤水的状况,亟需加以改善。However, the process waste gas in the above-mentioned Taiwan No. 482038 and No. 570146 patent cases passes through the inlet head seat and the waste gas treatment tank in a straight line; in other words, the waste gas passes through the high-temperature flame and washing water in a straight line, resulting in the waste gas It is difficult to increase the time of interaction with high-temperature flames and washing water, so it is easy to cause incomplete combustion of harmful substances in exhaust gas, and it is also easy to cause incomplete dissolution of harmful substances in exhaust gas in washing water. improve.

发明内容Contents of the invention

本实用新型的目的在于克服现有技术中,有关半导体制程废气以直线路径通过高温火焰及洗涤水,而导致该废气与高温火焰及洗涤水相互反应的时间难以提增的问题。The purpose of the utility model is to overcome the problem in the prior art that the waste gas from semiconductor manufacturing process passes through the high-temperature flame and washing water in a straight line, which makes it difficult to increase the time for the waste gas to react with the high-temperature flame and washing water.

为实现上述目的,本实用新型采用的技术方案是:For realizing above-mentioned object, the technical scheme that the utility model adopts is:

一种处理半导体制程废气的旋风式合氧燃烧装置,在一个废气供应端及一个燃气供应端之间设一入口头座,其特征在于,该入口头座内配置包含有:A cyclone-type oxy-combustion device for treating exhaust gas from semiconductor manufacturing process. An inlet head seat is provided between an exhaust gas supply end and a gas supply end. It is characterized in that the inlet head seat is equipped with:

一废气通道,连通于该废气供应端与该入口头座下方的一燃烧区之间,以导引废气进入该燃烧区;an exhaust gas passage communicates between the exhaust gas supply end and a combustion area below the inlet head seat, so as to guide exhaust gas into the combustion area;

两个隔板,间隔设置于该废气通道外围与入口头座内壁之间,并形成一个位于所述两个隔板之间的点火腔室;Two partitions are arranged at intervals between the periphery of the waste gas channel and the inner wall of the inlet head seat, and form an ignition chamber between the two partitions;

一点火棒,植设于该点火腔室中;及an ignition rod planted in the ignition chamber; and

复数斜孔,呈漩涡状分布形成于所述隔板上,连通该燃气供应端、点火腔室与燃烧区,以导引燃气漩涡进入该点火腔室内,经由该点火棒点燃而在该点火腔室内形成漩涡火焰,所述斜孔并导引该火焰漩涡进入该燃烧区,以燃烧该燃烧区中的废气。A plurality of oblique holes are formed on the partition plate in a swirl shape, and communicate with the gas supply end, the ignition chamber and the combustion area, so as to guide the gas swirl into the ignition chamber, and ignite through the ignition rod to create a gas in the ignition chamber. A vortex flame is formed in the chamber, and the inclined hole guides the flame vortex into the combustion zone to burn the exhaust gas in the combustion zone.

其中:所述两个隔板是一个上层隔板与一个下层隔板,所述斜孔包含形成于该上层隔板上的上层斜孔与形成于该下层隔板上的下层斜孔,所述上层斜孔连通于该燃气供应端与点火腔室之间,所述下层斜孔连通于该点火腔室与燃烧区之间。Wherein: the two baffles are an upper baffle and a lower baffle, the slanted hole includes an upper slanted hole formed on the upper baffle and a lower slanted hole formed on the lower baffle, the said The upper inclined hole communicates between the gas supply end and the ignition chamber, and the lower inclined hole communicates between the ignition chamber and the combustion zone.

其中:所述点火腔室形成于该废气通道外围、入口头座内壁以及上层与下层隔板之间。Wherein: the ignition chamber is formed on the periphery of the waste gas channel, the inner wall of the inlet head seat, and between the upper and lower partitions.

其中:所述入口头座位于一废气处理槽顶部,且该废气处理槽内壁形成一外层水幕,该燃烧区位于该废气处理槽内,且漩涡进入该燃烧区的火焰引动该废气漩涡至该水幕上。Wherein: the inlet head seat is located on the top of an exhaust gas treatment tank, and the inner wall of the exhaust gas treatment tank forms an outer water curtain, the combustion zone is located in the exhaust gas treatment tank, and the flame that swirls into the combustion zone induces the exhaust gas to swirl to on the water curtain.

其中:所述废气通道外围、上层隔板顶部与入口头座内壁之间形成一连通该燃气供应端与所述上层斜孔的燃气腔室。Wherein: a gas chamber connecting the gas supply end and the upper inclined hole is formed between the periphery of the waste gas channel, the top of the upper partition and the inner wall of the inlet head seat.

其中:所述燃气腔室内设有一连通该点火腔室的容置管,该点火器设于该容置管内,且该容置管上形成有复数气孔,连通于该容置管内部与该燃气腔室之间,以导引燃气进入该容置管内。Wherein: the gas chamber is provided with a storage tube communicating with the ignition chamber, the igniter is set in the storage tube, and a plurality of air holes are formed on the storage tube, which are connected to the inside of the storage tube and the gas between the chambers to guide gas into the accommodating tube.

其中:所述点火腔室外围与该入口头座内壁之间形成一能够导入外界洗涤水的环状上层水槽,且该上层水槽与该废气处理槽内部之间连通一上溢流口,以导引洗涤水溢流至该废气处理槽内,而形成一位于该外层水幕内侧的内层水幕,以接受废气吹袭。Wherein: an annular upper layer water tank that can introduce external washing water is formed between the outer periphery of the ignition chamber and the inner wall of the inlet head seat, and an upper overflow port is connected between the upper layer water tank and the interior of the waste gas treatment tank to guide The washing water is led to overflow into the waste gas treatment tank to form an inner water curtain inside the outer water curtain to accept the blowing of the waste gas.

其中:所述点火腔室外围与该入口头座内壁之间形成一连通该上层水槽的环状集水槽,位于该上层水槽顶部,且外界洗涤水经由该集水槽导入该上层水槽。Wherein: an annular sump connected to the upper water tank is formed between the outer periphery of the ignition chamber and the inner wall of the inlet head seat, and is located on the top of the upper water tank, and external washing water is introduced into the upper water tank through the water collection tank.

其中:所述废气处理槽内壁形成一能够导入外界洗涤水的环状下层水槽,且该下层水槽与该废气处理槽内部之间连通一下溢流口,以导引洗涤水溢流至该废气处理槽内形成该外层水幕。Wherein: the inner wall of the waste gas treatment tank forms an annular lower water tank that can introduce external washing water, and an overflow port is connected between the lower water tank and the inside of the waste gas treatment tank to guide the washing water to overflow to the waste gas treatment tank. The outer water curtain is formed in the tank.

其中:所述废气通道及所述下层斜孔下方相对端设有一位于该废气处理槽内的燃烧腔槽,且该燃烧腔槽顶部连通该废气通道及所述下层斜孔,该燃烧区位于该燃烧腔槽内,该燃烧腔槽底部并形成一连通该废气处理槽的槽口。Wherein: the opposite end of the exhaust gas channel and the lower inclined hole is provided with a combustion chamber groove located in the exhaust gas treatment tank, and the top of the combustion chamber groove communicates with the exhaust gas channel and the lower inclined hole, and the combustion zone is located in the In the combustion cavity, the bottom of the combustion cavity forms a notch that communicates with the waste gas treatment tank.

与现有技术相比较,采用上述技术方案的本实用新型具有的优点在于:凭借上述,所述斜孔的漩涡方向相等,而使经由所述斜孔漩涡进入点火腔室内的燃气于点燃生成火焰后,接续经由所述斜孔漩涡进入燃烧区内,而形成以漩涡状态由上而下流动的火焰,进而引动该燃烧区内的废气以漩涡状态由上而下流动;据此,利用漩涡火焰引动半导体制程废气,致使该废气以由上而下的漩涡路径通过漩涡的高温火焰,以延长该废气与漩涡火焰相互反应的时间;同时,凭借所述斜孔加压该燃气,而使漩涡火焰形成高密度旋风火网,以提升火焰净化废气中有害物质的效率。Compared with the prior art, the utility model adopting the above-mentioned technical solution has the advantage that: by virtue of the above, the swirl direction of the inclined hole is equal, so that the gas entering the ignition chamber through the swirl through the inclined hole is ignited to form a flame Afterwards, the vortex enters the combustion zone through the inclined hole, forming a flame flowing from top to bottom in a swirl state, and then induces the exhaust gas in the combustion zone to flow from top to bottom in a swirl state; accordingly, using the swirl flame Inducing the exhaust gas from the semiconductor manufacturing process, causing the exhaust gas to pass through the high-temperature flame of the vortex in a swirl path from top to bottom, so as to prolong the time for the interaction between the exhaust gas and the vortex flame; A high-density cyclone fire net is formed to improve the efficiency of flame purification of harmful substances in exhaust gas.

附图说明Description of drawings

图1是本实用新型较佳实施例的一剖示图;Fig. 1 is a sectional view of the preferred embodiment of the utility model;

图2是本实用新型较佳实施例的另一剖示图;Fig. 2 is another sectional view of the preferred embodiment of the present invention;

图3是图2的A-A断面图;Fig. 3 is the A-A sectional view of Fig. 2;

图3a是图3的局部放大图;Figure 3a is a partial enlarged view of Figure 3;

图4是图2的B-B断面图;Fig. 4 is the B-B sectional view of Fig. 2;

图4a是图4的局部放大图;Figure 4a is a partially enlarged view of Figure 4;

图5是本实用新型的导管与隔板的立体图;Fig. 5 is a perspective view of a conduit and a partition of the present invention;

图6是本实用新型的隔板的立体图;Fig. 6 is a perspective view of a partition of the present invention;

图7是图1的使用状态图;Fig. 7 is the usage state diagram of Fig. 1;

图8是图2的使用状态图。FIG. 8 is a diagram of the use state of FIG. 2 .

附图标记说明:11-废气供应端;12-燃气供应端;13-洗涤水供应端;2-废气处理槽;20-反应腔室;21-下层水槽;22-第二给水口;23-下溢流口;3-入口头座;30-燃烧区;31-燃气腔室;311-燃气入口;32-点火腔室;33-容置管;331-气孔;34-环套;341-燃烧腔槽;342-槽口;35-上层水槽;351-上溢流口;36-集水槽;361-通孔;362-第一给水口;4-废气通道;40-导管;41-废气入口;42-废气出口;5-上层隔板;51-上层斜孔;6-下层隔板;61-下层斜孔;7-点火器;81-外层水幕;82-内层水幕;91、92-火焰。Explanation of reference signs: 11-exhaust gas supply end; 12-gas supply end; 13-washing water supply end; 2-exhaust gas treatment tank; 20-reaction chamber; 21-lower water tank; 22-second water supply port; 23- Underflow outlet; 3-inlet head seat; 30-combustion zone; 31-gas chamber; 311-gas inlet; 32-ignition chamber; 33-accommodating tube; 331-gas hole; Combustion chamber groove; 342-notch; 35-upper water tank; 351-upper overflow port; 36-water collection tank; 361-through hole; 362-first water supply port; 4-exhaust gas channel; Inlet; 42-exhaust gas outlet; 5-upper baffle; 51-upper inclined hole; 6-lower baffle; 61-lower slanted hole; 7-igniter; 81-outer water curtain; 82-inner water curtain; 91, 92-flames.

具体实施方式Detailed ways

请参阅图1所示,揭示出本实用新型较佳实施例的剖示图,并配合图2说明本实用新型处理半导体制程废气的旋风式合氧燃烧装置,在一半导体制程的废气供应端11及一燃气供应端12之间介设一入口头座3(inlet head),且该入口头座3位于一废气处理槽2顶部,该废气处理槽2内壁形成一外层水幕81(如图7所示),该入口头座3内并配置包含一呈垂直状的废气通道4、两个隔板5、6、一点火器7及复数斜孔51、61。其中,该燃气供应端12供应的燃气包含5%~15%的瓦斯及95%~85%的空气,利用外界一文式管预混器(未绘制)将瓦斯及外界空气预先混合成可供燃烧的含氧燃气,如此能够省去单独供应氧气的必要性;该废气处理槽2内部中央形成一反应腔室20,且废气处理槽2内壁形成一呈环状的下层水槽21,并于废气处理槽2外壁设有一连通该下层水槽21的第二给水口22,该第二给水口22能够与外界的一个洗涤水供应端13相连通,以供应洗涤水至下层水槽21,且下层水槽21顶端与废气处理槽2内部反应腔室20之间连通一个呈环状的下溢流口23,该下层水槽21内的洗涤水能够经由该下溢流口23导引而溢流至废气处理槽2的反应腔室20内,并沿着反应腔室20内壁由上而下流动形成该外层水幕81。Please refer to Fig. 1, which reveals a cross-sectional view of a preferred embodiment of the present invention, and cooperates with Fig. 2 to illustrate the utility model's cyclone-type oxy-fuel combustion device for treating waste gas from a semiconductor process, at the waste gas supply end 11 of a semiconductor process An inlet head seat 3 (inlet head) is interposed between a gas supply end 12, and the inlet head seat 3 is located at the top of a waste gas treatment tank 2, and the inner wall of the waste gas treatment tank 2 forms an outer water curtain 81 (as shown in FIG. 7), the inlet head seat 3 is equipped with a vertical waste gas passage 4, two partitions 5, 6, an igniter 7 and a plurality of inclined holes 51, 61. Wherein, the gas supplied by the gas supply end 12 contains 5% to 15% of gas and 95% to 85% of air, and the gas and the outside air are pre-mixed by an external Vent tube premixer (not shown) into a combustible gas. Oxygen-containing gas can save the necessity of supplying oxygen separately; the center of the waste gas treatment tank 2 forms a reaction chamber 20, and the inner wall of the waste gas treatment tank 2 forms a ring-shaped lower floor water tank 21, which is used for waste gas treatment. The outer wall of the tank 2 is provided with a second water supply port 22 communicating with the lower water tank 21. The second water supply port 22 can communicate with a washing water supply port 13 outside to supply washing water to the lower water tank 21, and the top of the lower water tank 21 An annular lower overflow port 23 is communicated with the internal reaction chamber 20 of the waste gas treatment tank 2 , and the washing water in the lower tank 21 can be guided through the lower overflow port 23 to overflow to the waste gas treatment tank 2 In the reaction chamber 20, and flow along the inner wall of the reaction chamber 20 from top to bottom to form the outer water curtain 81.

该废气通道4形成于该入口头座3中央的一垂直配置的圆形导管40内(如图1及图3所示),而在入口头座3顶部形成一连通废气供应端11的废气入口41,并在入口头座3底部形成一废气出口42,且废气出口42连通该入口头座3下方的一燃烧区30;实际上,该燃烧区30位于该废气处理槽2的反应腔室20,致使废气通道4连通于废气供应端11与反应腔室20的燃烧区30之间,能够导引废气由上而下进入反应腔室20的燃烧区30内。所述两个隔板5、6间隔设置于该废气通道4外围与入口头座3内壁之间,并形成一个位于所述两个隔板5、6之间的点火腔室32;在实施上,所述隔板5、6是一上层隔板5与一下层隔板6,该上层隔板5与下层隔板6均呈圆环状(如图6所示),分别套置于该导管40外周壁上(配合图4及图5所示),而间隔于含藏该废气通道4的导管40外围与入口头座3内壁之间;该下层隔板6位于上层隔板5下方,且点火腔室32形成于该导管40外围、入口头座3内壁、上层与下层隔板5、6之间。The exhaust gas channel 4 is formed in a vertically arranged circular duct 40 in the center of the inlet head seat 3 (as shown in Figures 1 and 3), and an exhaust gas inlet connected to the exhaust gas supply end 11 is formed on the top of the inlet head seat 3 41, and a waste gas outlet 42 is formed at the bottom of the inlet head seat 3, and the waste gas outlet 42 communicates with a combustion zone 30 below the inlet head seat 3; in fact, the combustion zone 30 is located in the reaction chamber 20 of the waste gas treatment tank 2 , so that the exhaust gas channel 4 communicates between the exhaust gas supply end 11 and the combustion zone 30 of the reaction chamber 20 , and the exhaust gas can be guided into the combustion zone 30 of the reaction chamber 20 from top to bottom. The two partitions 5, 6 are arranged at intervals between the outer periphery of the waste gas channel 4 and the inner wall of the inlet head seat 3, and form an ignition chamber 32 between the two partitions 5, 6; in practice , the partitions 5 and 6 are an upper partition 5 and a lower partition 6, the upper partition 5 and the lower partition 6 are annular (as shown in Figure 6), respectively sleeved in the conduit 40 on the peripheral wall (as shown in Fig. 4 and Fig. 5), and spaced between the periphery of the conduit 40 containing the waste gas channel 4 and the inner wall of the inlet head seat 3; the lower partition 6 is located below the upper partition 5, and The ignition chamber 32 is formed on the periphery of the conduit 40 , the inner wall of the inlet head seat 3 , and between the upper and lower partitions 5 , 6 .

所述斜孔51、61包含复数的上层斜孔51与下层斜孔61,所述上层斜孔51呈漩涡状分布形成于该上层隔板5上(如图2及图3所示),而围绕于该废气通道4的导管40外围(配合图3a及图6所示);该入口头座3内壁、含藏废气通道4的导管40外围与上层隔板5顶部之间形成一连通所述上层斜孔51顶端的燃气腔室31,该入口头座3外壁设有一连通该燃气腔室31与燃气供应端12的燃气入口311,且所述上层斜孔51底端连通该点火腔室32,致使所述上层斜孔51连通于燃气供应端12与点火腔室32之间;该燃气供应端12能够供应该含氧燃气至入口头座3的燃气腔室31内,该燃气腔室31能够平均供应燃气至各个上层斜孔51,且所述上层斜孔51能够导引燃气腔室31内的燃气由上而下漩涡进入该点火腔室32内,而使燃气于点火腔室32内以漩涡状态由上而下流动。该燃气腔室31内设有一连通该点火腔室32的容置管33,该点火器7植设于容置管33内,并延伸至点火腔室32内,且容置管33上形成有复数气孔331,连通于容置管33内部与燃气腔室31之间,以导引燃气腔室31的燃气进入容置管33内,接受点火器7点燃而生成一母火火焰91(如图7所示),以触燃该点火腔室32内的燃气,而生成以漩涡状态由上而下流动的火焰92,能够经由导管40外壁加温废气通道4内的废气。The slanted holes 51, 61 include a plurality of upper slanted holes 51 and lower slanted holes 61, and the upper slanted holes 51 are formed in a swirl shape on the upper partition 5 (as shown in FIGS. 2 and 3 ), and Surrounding the periphery of the conduit 40 of the waste gas passage 4 (cooperating with Fig. 3 a and shown in Fig. 6); the inner wall of the inlet head seat 3, the periphery of the conduit 40 containing the waste gas passage 4 and the top of the upper partition 5 form a communication. The gas chamber 31 at the top of the upper inclined hole 51, the outer wall of the inlet head seat 3 is provided with a gas inlet 311 communicating with the gas chamber 31 and the gas supply end 12, and the bottom end of the upper inclined hole 51 communicates with the ignition chamber 32 , so that the upper inclined hole 51 communicates between the gas supply end 12 and the ignition chamber 32; the gas supply end 12 can supply the oxygen-containing gas to the gas chamber 31 of the inlet head seat 3, and the gas chamber 31 The gas can be evenly supplied to each upper inclined hole 51, and the upper inclined hole 51 can guide the gas in the gas chamber 31 to swirl from top to bottom into the ignition chamber 32, so that the gas in the ignition chamber 32 Flows from top to bottom in a vortex state. The gas chamber 31 is provided with an accommodating pipe 33 communicating with the ignition chamber 32, the igniter 7 is planted in the accommodating pipe 33 and extends into the ignition chamber 32, and the accommodating pipe 33 is formed with A plurality of air holes 331 are communicated between the inside of the housing tube 33 and the gas chamber 31, so as to guide the combustion gas of the gas chamber 31 into the housing tube 33, and receive ignition from the igniter 7 to generate a mother fire flame 91 (as shown in the figure 7 ), to ignite the gas in the ignition chamber 32 to generate a flame 92 flowing from top to bottom in a swirling state, which can heat the exhaust gas in the exhaust gas channel 4 through the outer wall of the conduit 40 .

所述下层斜孔61呈漩涡状分布形成于该下层隔板6上(如图2及图4所示),而围绕于该废气通道4的导管40外围(配合图4a及图6所示);所述上、下层斜孔51、61的漩涡方向相等,且所述下层斜孔61连通于点火腔室32与反应腔室20的燃烧区30之间,能够导引点火腔室32内的漩涡状火焰92由上而下漩涡进入反应腔室20的燃烧区30内,驱使该火焰92于燃烧区30内持续以漩涡状态由上而下流动。该入口头座3底部周边设有一向下方延伸至废气处理槽2内的环套34,且环套34内形成一位于该废气通道4及所述下层斜孔61下方相对端的燃烧腔槽341,而使燃烧腔槽341位于废气处理槽2的反应腔室20内,且燃烧腔槽341顶部连通该废气通道4及所述下层斜孔61,该燃烧区30位于该燃烧腔槽341内,该燃烧腔槽341底部形成一连通废气处理槽2的反应腔室20的槽口342;上述下溢流口23实际上可形成于下层水槽21顶端与环套34外壁之间。The lower inclined holes 61 are formed in a swirl shape on the lower partition plate 6 (as shown in FIG. 2 and FIG. 4 ), and surround the periphery of the duct 40 of the exhaust gas passage 4 (as shown in FIG. 4 a and FIG. 6 ). The swirl directions of the upper and lower slanted holes 51, 61 are equal, and the lower slanted hole 61 communicates between the ignition chamber 32 and the combustion zone 30 of the reaction chamber 20, and can guide the ignition chamber 32 The swirling flame 92 swirls into the combustion zone 30 of the reaction chamber 20 from top to bottom, and drives the flame 92 to continuously flow from top to bottom in the combustion zone 30 in a swirling state. The bottom periphery of the inlet head seat 3 is provided with a collar 34 extending downwards into the exhaust gas treatment tank 2, and a combustion chamber groove 341 is formed in the collar 34 at the opposite end below the exhaust gas channel 4 and the lower inclined hole 61, The combustion chamber groove 341 is located in the reaction chamber 20 of the exhaust gas treatment tank 2, and the top of the combustion chamber groove 341 communicates with the exhaust gas channel 4 and the lower inclined hole 61, and the combustion zone 30 is located in the combustion chamber groove 341. A notch 342 connected to the reaction chamber 20 of the exhaust gas treatment tank 2 is formed at the bottom of the combustion chamber groove 341 ;

该点火腔室32外围与入口头座3内壁之间形成一呈环状的上层水槽35(如图1所示),以及一呈环状的集水槽36(配合图3所示),该集水槽36位于上层水槽35顶部,且集水槽36与上层水槽35之间连通复数排水通孔361,该入口头座3外壁设有一连通集水槽36与外界的洗涤水供应端13的第一给水口362,能够供应洗涤水经由集水槽36及所述通孔361导入上层水槽35;该上层水槽35顶端与废气处理槽2内部的燃烧腔槽341之间连通一呈环状的上溢流口351,能够导引上层水槽35内的洗涤水溢流至燃烧腔槽341内壁(如图7所示),并沿着邻近废气处理槽2的反应腔室20内壁的区域洒落,而形成一位于该外层水幕81内侧的内层水幕82。An annular upper water tank 35 (as shown in Figure 1 ) and an annular water collection tank 36 (as shown in Figure 3 ) are formed between the periphery of the ignition chamber 32 and the inner wall of the inlet head seat 3 . The water tank 36 is located at the top of the upper water tank 35, and a plurality of drainage through holes 361 are connected between the water collecting tank 36 and the upper water tank 35. The outer wall of the inlet head seat 3 is provided with a first water supply port connecting the water collecting tank 36 and the external washing water supply end 13. 362, capable of supplying washing water into the upper water tank 35 through the sump 36 and the through hole 361; the top of the upper water tank 35 communicates with the combustion chamber groove 341 inside the waste gas treatment tank 2 with an annular upper overflow port 351 , can guide the washing water in the upper water tank 35 to overflow to the inner wall of the combustion chamber tank 341 (as shown in Figure 7), and sprinkle along the area of the inner wall of the reaction chamber 20 adjacent to the exhaust gas treatment tank 2, and form a water tank located at the The inner layer water curtain 82 inside the outer layer water curtain 81.

依据上述构件组成,可供据以实施本实用新型,包括下列步骤:Composition according to above-mentioned component can be used for carrying out the utility model according to, comprises the following steps:

(1)令洗涤水供应端13同时对第一及第二给水口362、22持续供应洗涤水(如图7所示),而使反应腔室20和燃烧腔槽341内壁分别形成外层水幕81与内层水幕82。(1) Make the washing water supply end 13 continuously supply washing water to the first and second water supply ports 362, 22 simultaneously (as shown in FIG. 7 ), so that the inner walls of the reaction chamber 20 and the combustion chamber groove 341 form an outer layer of water respectively. Curtain 81 and inner layer water curtain 82.

(2)同时令燃气供应端12经由该燃气入口311持续供应含氧的燃气至燃气腔室31内(如图7所示),迫使该燃气接受所述上层斜孔51导引,而由上而下漩涡进入该点火腔室32内(配合图8所示),进而形成以漩涡状态由上而下流动的燃气;同时,一部分燃气经由所述气孔331进入容置管33内,而充斥于该点火器7四周。(2) At the same time, make the gas supply end 12 continuously supply oxygen-containing gas into the gas chamber 31 through the gas inlet 311 (as shown in FIG. The lower vortex enters the ignition chamber 32 (as shown in FIG. 8 ), and then forms gas flowing from top to bottom in a vortex state. The igniter 7 surrounds.

(3)利用点火器7产生电弧火花(如图7所示),以点燃容置管33内燃气,而生成母火火焰91,进而触燃点火腔室32内的燃气,而生成以漩涡状态由上而下流动的火焰92(如图8所示),致使点火腔室32内持续保持燃烧状态,且该火焰92接受所述下层斜孔61导引,而由上而下漩涡进入燃烧腔槽341内,迫使该火焰92于燃烧腔槽341及反应腔室20内保持以漩涡状态由上而下流动,并于燃烧腔槽341的燃烧区30形成高密度的旋风火网。该燃气供应端12供应至入口头座3的含氧燃气的多寡,能够控制所述以漩涡状态由上而下流动的火焰92的漩涡速度,增加该燃气的供应量能够提升火焰92的漩涡速度,减少该燃气的供应量能够降低火焰92的漩涡速度。(3) Utilize the igniter 7 to generate an arc spark (as shown in Figure 7 ) to ignite the gas in the housing tube 33 to generate a parent fire flame 91, which then ignites the gas in the ignition chamber 32 to form a swirl state The flame 92 flowing from top to bottom (as shown in FIG. 8 ) causes the ignition chamber 32 to continue to maintain a combustion state, and the flame 92 is guided by the lower inclined hole 61 and swirls from top to bottom into the combustion chamber In the groove 341 , the flame 92 is forced to flow from top to bottom in a vortex state in the combustion chamber groove 341 and the reaction chamber 20 , and forms a high-density cyclone fire net in the combustion zone 30 of the combustion chamber groove 341 . The amount of oxygen-containing gas supplied to the inlet head seat 3 by the gas supply end 12 can control the swirl speed of the flame 92 flowing from top to bottom in a swirl state, and increasing the supply of the gas can increase the swirl speed of the flame 92 , reducing the gas supply can reduce the swirl velocity of the flame 92 .

(4)开放废气供应端11经由废气入口41持续供应半导体制程废气进入废气通道4(如图7所示),而使废气依序通过废气入口41、废气通道4、废气出口42、燃烧腔槽341及反应腔室20。(4) Open the exhaust gas supply end 11 to continuously supply semiconductor process exhaust gas into the exhaust gas channel 4 through the exhaust gas inlet 41 (as shown in Figure 7), so that the exhaust gas passes through the exhaust gas inlet 41, the exhaust gas channel 4, the exhaust gas outlet 42, and the combustion chamber groove in sequence 341 and reaction chamber 20.

期间,通过废气通道4的废气接受燃气腔室31内火焰92通过导管40外壁预先加温,以利于缩减废气中有害物质接受高温催化而分解成无害物质的时间,经由废气通道4的废气出口42进入废气处理槽2的燃烧腔槽341及反应腔室20的废气,接受燃烧区30的所述以漩涡状态由上而下流动的火焰92燃烧(配合图8所示),迫使废气中有害物质接受该火焰92的高温催化而分解成无害的物质,该火焰92形成的高密度旋风火网并引动该废气以漩涡状态抛甩至该内层与外层水幕82、水幕81上,迫使废气中包含粉尘及氟离子等能够接受水洗的有害物质撞击在所述水幕82、81上,且融解于所述水幕82、81中,并随着所述水幕82、81排出,致使废气转换成为无害的气体,同时凭借所述水幕82、81冷却该废气。During this period, the exhaust gas passing through the exhaust gas channel 4 is pre-heated by the flame 92 in the gas chamber 31 through the outer wall of the conduit 40, so as to reduce the time for harmful substances in the exhaust gas to undergo high-temperature catalysis and decompose into harmless substances. 42 The waste gas that enters the combustion cavity groove 341 of the waste gas treatment tank 2 and the reaction chamber 20 receives the flame 92 flowing from top to bottom in a swirl state in the combustion zone 30 to burn (as shown in FIG. 8 ), forcing the harmful Substances are catalyzed by the high temperature of the flame 92 and decomposed into harmless substances. The flame 92 forms a high-density cyclone fire net and induces the waste gas to be thrown to the inner and outer water curtains 82 and 81 in a vortex state. , forcing the harmful substances contained in the exhaust gas, such as dust and fluorine ions, which can accept water washing, to hit the water curtains 82, 81, and melt in the water curtains 82, 81, and then discharged along with the water curtains 82, 81 , causing the waste gas to be converted into a harmless gas while cooling the waste gas by means of said water curtains 82,81.

凭借上述,由于所述上、下层斜孔51、61的漩涡方向相等,而使经由所述上层斜孔51漩涡进入点火腔室32内的燃气于点燃生成火焰92后,接续经由所述下层斜孔61漩涡进入废气处理槽2的燃烧区30内,而形成以漩涡状态由上而下流动的火焰92,进而引动该废气处理槽2的燃烧区30内的废气以漩涡状态由上而下流动;据此,利用漩涡火焰92引动半导体制程废气,致使该废气以由上而下的漩涡路径通过漩涡的高温火焰及洗涤水,以延长该废气与漩涡火焰及洗涤水相互反应的时间,致使废气受热更加均匀,能够避免废气未受热就离开火焰92的旋风火网的状况;同时,凭借所述上、下层斜孔51、61加压该燃气,而使漩涡火焰92形成高密度的旋风火网,以提升火焰净化废气中有害物质的效率;此外,凭借该水幕81、82融解废气中有害物质,能够避免有害物质附着于废气处理槽2内壁,以进一步防止废气处理槽2内壁发生卡垢及侵蚀的现象。By virtue of the above, since the swirl directions of the upper and lower inclined holes 51, 61 are equal, the gas that swirls into the ignition chamber 32 through the upper inclined hole 51 is ignited to form a flame 92, and then passes through the lower inclined hole. The hole 61 swirls into the combustion zone 30 of the exhaust gas treatment tank 2 to form a flame 92 flowing from top to bottom in a swirling state, and then induces the exhaust gas in the combustion zone 30 of the exhaust gas treatment tank 2 to flow from top to bottom in a swirling state ; Accordingly, use the vortex flame 92 to induce the exhaust gas of the semiconductor manufacturing process, causing the exhaust gas to pass through the high-temperature flame and washing water of the vortex in a vortex path from top to bottom, so as to prolong the time for the exhaust gas to react with the vortex flame and the washing water, so that the exhaust gas The heating is more uniform, which can avoid the situation that the exhaust gas leaves the flame 92 without being heated; at the same time, the gas is pressurized by means of the upper and lower inclined holes 51, 61, so that the swirl flame 92 forms a high-density cyclone fire net , to improve the efficiency of flame purification of harmful substances in the exhaust gas; in addition, by virtue of the water curtains 81 and 82 melting the harmful substances in the exhaust gas, the harmful substances can be prevented from adhering to the inner wall of the exhaust gas treatment tank 2, so as to further prevent the occurrence of fouling on the inner wall of the exhaust gas treatment tank 2 and erosion phenomena.

以上说明对本实用新型而言只是说明性的,而非限制性的,本领域普通技术人员理解,在不脱离权利要求所限定的精神和范围的情况下,可作出许多修改、变化或等效,但都将落入本实用新型的保护范围之内。The above description is only illustrative, rather than restrictive, of the present utility model. Those of ordinary skill in the art understand that many modifications, changes or equivalents can be made without departing from the spirit and scope defined in the claims. But all will fall within the protection scope of the present utility model.

Claims (10)

1. a cyclone type of handling manufacture of semiconductor waste gas closes the oxygen burner, establishes an inlet headstock between a waste gas feed end and a gas supply end, it is characterized in that configuration packet contains in this inlet headstock:
One exhaust steam passage is communicated between the combustion zone of this waste gas feed end and this inlet headstock below, enters this combustion zone with exhaust gas routing;
Two dividing plates are arranged at intervals between this exhaust steam passage periphery and the inlet headstock inwall, and form a fire chamber between described two dividing plates;
One fire rod plants in this fire chamber; And
The plural number inclined hole, being the distribution of whirlpool shape is formed on the described dividing plate, be communicated with this gas supply end, fire chamber and combustion zone, enter in this fire chamber with guiding combustion gas whirlpool, light and in this fire chamber, form whirlpool flame via this fire rod, described inclined hole is also guided this flame whirlpool and is entered this combustion zone, with the waste gas in this combustion zone of burning.
2. the cyclone type of processing manufacture of semiconductor waste gas according to claim 1 closes the oxygen burner, it is characterized in that: described two dividing plates are a upper strata dividing plate and lower floor's dividing plate, described inclined hole comprises upper strata inclined hole that is formed on this upper strata dividing plate and the lower floor's inclined hole that is formed on this lower floor's dividing plate, described upper strata inclined hole is communicated between this gas supply end and the fire chamber, and described lower floor inclined hole is communicated between this fire chamber and the combustion zone.
3. the cyclone type of processing manufacture of semiconductor waste gas according to claim 2 closes the oxygen burner, it is characterized in that: described fire chamber is formed between this exhaust steam passage periphery, inlet headstock inwall and upper strata and the lower floor's dividing plate.
4. the cyclone type of processing manufacture of semiconductor waste gas according to claim 2 closes the oxygen burner, it is characterized in that: described inlet headstock is positioned at an exhaust-gas treatment groove top, and this exhaust-gas treatment groove inwall forms an outer water curtain, this combustion zone is positioned at this exhaust-gas treatment groove, and whirlpool enters this waste gas whirlpool of flame priming of this combustion zone to this water curtain.
5. the cyclone type of processing manufacture of semiconductor waste gas according to claim 2 closes the oxygen burner, it is characterized in that: form a combustion gas chamber that is communicated with this gas supply end and described upper strata inclined hole between described exhaust steam passage periphery, dividing plate top, upper strata and the inlet headstock inwall.
6. the cyclone type of processing manufacture of semiconductor waste gas according to claim 5 closes the oxygen burner, it is characterized in that: the containing tube that is provided with this fire chamber of connection in the described combustion gas chamber, this igniter is located in this containing tube, and be formed with plural pore on this containing tube, be communicated between this containing tube inside and this combustion gas chamber, enter in this containing tube with the guiding combustion gas.
7. the cyclone type of processing manufacture of semiconductor waste gas according to claim 4 closes the oxygen burner, it is characterized in that: formation one can import the ring-type upper strata tank of extraneous washings between described fire chamber periphery and this inlet headstock inwall, and be communicated with overfall between this upper strata tank and this exhaust-gas treatment groove inside, to guide the washings overflow to this exhaust-gas treatment groove, and form an internal layer water curtain that is positioned at this skin water curtain inboard, blow to accept waste gas.
8. the cyclone type of processing manufacture of semiconductor waste gas according to claim 7 closes the oxygen burner, it is characterized in that: described fire chamber peripheral with this inlet headstock inwall between formation one be communicated with the ring-type water leg of this upper strata tank, be positioned at this upper strata sink top, and extraneous washings import this upper strata tank via this water leg.
9. the cyclone type according to claim 4 or 7 described processing manufacture of semiconductor waste gas closes the oxygen burner, it is characterized in that: described exhaust-gas treatment groove inwall formation one can import the ring-type lower floor tank of extraneous washings, and be communicated with overfall between this lower floor's tank and this exhaust-gas treatment groove inside, to this exhaust-gas treatment groove, form this skin water curtain with the overflow of guiding washings.
10. the cyclone type of processing manufacture of semiconductor waste gas according to claim 4 closes the oxygen burner, it is characterized in that: described exhaust steam passage and opposite end, described lower floor inclined hole below are provided with a combustion chamber groove that is positioned at this exhaust-gas treatment groove, and this combustion chamber groove top is communicated with this exhaust steam passage and described lower floor inclined hole, this combustion zone is positioned at this combustion chamber groove, and this combustion chamber trench bottom also forms a notch that is communicated with this exhaust-gas treatment groove.
CN2010206328445U 2010-11-08 2010-11-30 Cyclone oxygen-synthesizing combustion device for treating waste gas of semiconductor process Expired - Fee Related CN201925936U (en)

Applications Claiming Priority (2)

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TW099221582U TWM404344U (en) 2010-11-08 2010-11-08 Whirlwind type oxygen-combining combustion device for treating waste gas in semiconductor processing
TW099221582 2010-11-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113244718A (en) * 2021-05-24 2021-08-13 东莞市尚弘博实业有限公司 Water curtain filtration system and automation equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113244718A (en) * 2021-05-24 2021-08-13 东莞市尚弘博实业有限公司 Water curtain filtration system and automation equipment

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