CN201323195Y - Triode - Google Patents
Triode Download PDFInfo
- Publication number
- CN201323195Y CN201323195Y CN200820213029.8U CN200820213029U CN201323195Y CN 201323195 Y CN201323195 Y CN 201323195Y CN 200820213029 U CN200820213029 U CN 200820213029U CN 201323195 Y CN201323195 Y CN 201323195Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
一种三极管,包括芯片、框架、焊接在所述芯片及框架之间以电连接所述芯片及框架的键合丝、包裹在所述芯片及键合丝外以保护所述芯片的塑封料,所述三极管的引脚长度为5-8mm。上述三极管通过缩短三极管引脚的长度,实现节约材料以降低物料成本,同时降低了产品的重量,使单个产品的运输费用降低。
A triode, including a chip, a frame, a bonding wire welded between the chip and the frame to electrically connect the chip and the frame, and a plastic packaging compound wrapped outside the chip and the bonding wire to protect the chip, The lead length of the triode is 5-8mm. By shortening the length of the pins of the triode, material saving is realized to reduce the cost of materials, and at the same time, the weight of the product is reduced, so that the transportation cost of a single product is reduced.
Description
【技术领域】【Technical field】
本实用新型涉及电子元件技术领域,尤其涉及一种三极管。The utility model relates to the technical field of electronic components, in particular to a triode.
【背景技术】【Background technique】
三极管体积小、重量轻、耗电少、寿命长、可靠性高,已广泛用于广播、电视、通信、雷达、计算机、自控装置、电子仪器、家用电器等领域,起放大、振荡、开关等作用。Transistors are small in size, light in weight, low in power consumption, long in life, and high in reliability. They have been widely used in broadcasting, television, communications, radar, computers, automatic control devices, electronic instruments, household appliances, and other fields for amplification, oscillation, and switching. effect.
随着半导体技术的发展,三极管的封装技术同样快速向前发展。为了减小成本,工艺方面进行着不断革新,如半导体芯片特征尺寸的缩小,引入大量的新材料、新工艺和新器件结构。With the development of semiconductor technology, the packaging technology of triode is also developing rapidly. In order to reduce costs, continuous innovations are being made in the process, such as the reduction of the feature size of semiconductor chips, and the introduction of a large number of new materials, new processes and new device structures.
通常,三极管的框架由金属材料制成,起着导电及散热的作用。框架在三极管的成本中占据一定的比重,在某些导电及散热性能要求较高的三极管中,框架由纯铜等材料制成,造成三极管的成本较高。Usually, the frame of the triode is made of metal material, which plays the role of conduction and heat dissipation. The frame occupies a certain proportion in the cost of the triode. In some triodes that require high electrical conductivity and heat dissipation performance, the frame is made of pure copper and other materials, resulting in higher cost of the triode.
【实用新型内容】【Content of utility model】
有鉴于此,有必要针对传统的三极管的成本较高的问题,提供一种低成本的三极管。In view of this, it is necessary to provide a low-cost triode to solve the problem of high cost of the traditional triode.
为解决上述技术问题,提出了以下技术方案:In order to solve the above technical problems, the following technical solutions are proposed:
一种三极管,包括芯片、框架、焊接在所述芯片及框架之间以电连接所述芯片及框架的键合丝、包裹在所述芯片及键合丝外以保护所述芯片的塑封料,所述三极管的引脚长度为5-8mm。A triode, including a chip, a frame, a bonding wire welded between the chip and the frame to electrically connect the chip and the frame, and a plastic packaging compound wrapped outside the chip and the bonding wire to protect the chip, The lead length of the triode is 5-8mm.
优选地,所述三极管的引脚长度为7.5mm。Preferably, the lead length of the triode is 7.5mm.
优选地,所述三极管的引脚的自由端的宽度逐渐缩小。Preferably, the width of the free end of the pin of the triode is gradually reduced.
优选地,所述三极管的引脚的自由端的最小宽度为0.36mm。Preferably, the minimum width of the free end of the lead of the triode is 0.36mm.
优选地,制成所述三极管的框架的引脚长度为10.46mm。Preferably, the lead length of the frame making the triode is 10.46mm.
优选地,制成所述三极管的框架的底筋的宽度为3.6mm。Preferably, the width of the bottom rib forming the frame of the triode is 3.6 mm.
优选地,所述三极管的框架的中筋及底筋为一次性切除。Preferably, the middle and bottom ribs of the triode frame are cut off at one time.
优选地,制成所述三极管的框架的长度为22.06mm。Preferably, the length of the frame for making the triode is 22.06mm.
上述三极管通过缩短三极管引脚的长度,实现节约材料以降低物料成本,同时降低了产品的重量,使单个产品的运输费用降低。By shortening the length of the pins of the triode, material saving is realized to reduce the cost of materials, and at the same time, the weight of the product is reduced, so that the transportation cost of a single product is reduced.
【附图说明】【Description of drawings】
图1为三极管的框架示意图;Figure 1 is a schematic diagram of the frame of the triode;
图2为传统的三极管的框架尺寸示意图;Fig. 2 is a schematic diagram of the frame size of a traditional triode;
图3为本实施方式的三极管的框架尺寸示意图;FIG. 3 is a schematic diagram of the frame size of the triode of the present embodiment;
图4为三极管的结构示意图;Fig. 4 is the structure diagram of triode;
图5为传统三极管的成品图;Figure 5 is a finished product diagram of a traditional triode;
图6为本实施方式的三极管的成品图。FIG. 6 is a finished view of the triode of this embodiment.
【具体实施方式】【Detailed ways】
封装完成后的三极管主要包括芯片、框架、连接芯片与框架的键合丝、包裹在所述芯片及键合丝外以保护芯片与键合丝的塑封料等。在以下的实施方式中,根据三极管的生产和使用性能要求,在不对其产生影响的情况下,通过缩短三极管引脚的长度,实现节约材料以降低物料成本,同时降低了产品的重量,使单个产品的运输费用降低。The triode after packaging mainly includes a chip, a frame, a bonding wire connecting the chip and the frame, and a plastic encapsulant wrapped around the chip and the bonding wire to protect the chip and the bonding wire. In the following embodiments, according to the production and performance requirements of the triode, without affecting it, by shortening the length of the triode pins, material saving is realized to reduce the cost of materials, and at the same time reduce the weight of the product, so that a single Shipping costs for products are reduced.
如图1所示三极管的框架100包括本体110、引脚120、中筋130及底筋140。引脚120包括发射极引脚122、集电极引脚124与基极引脚126。其中,集电极引脚124直接与本体110相连,发射极引脚122与基极引脚126分别位于集电极引脚124的两侧。中筋130在靠近本体110的一端连接发射极引脚122、集电极引脚124与基极引脚126;底筋140在另一端连接发射极引脚122、集电极引脚124与基极引脚126,底筋140可以将多个三极管的框架100连接在一起。As shown in FIG. 1 , the
如图2所示为传统的三极管的框架尺寸示意图,如图3所示为本实施方式的三极管的框架100的尺寸示意图。对比图3及图2可以看出,本实施方式的框架长度较传统的框架长度减少了7.3mm。具体来说,传统的三极管的框架长度从29.36mm减为本实施方式的22.06mm。FIG. 2 is a schematic diagram of the frame size of a conventional triode, and FIG. 3 is a schematic diagram of the size of the
从理论上来说,框架100的长度越短,就越能节约材料。然而,如图4所示,框架本体由于需要放置芯片200并用键合丝300连接芯片200及框架100,因此本体110的长度不能轻易改变。本实施方式中,本体110的长度为8mm,通过改变引脚120的长度来节约材料。如图2及图3所示,本实施方式的框架引脚120的长度从传统的18.16mm减少为10.46mm。Theoretically, the shorter the
另外,底筋140的宽度由3.2mm改进3.6mm,目的是为了加强框架100的强度,防止在加工过程中框架变形(本实施方式中,每条底筋140连接25个框架100)。由于底筋140的宽度增加,框架100的强度增强,在加工三极管10的过程中,可以采用一次性切除中筋130、底筋140的方法,相对于传统的分开切除中筋130与底筋140的方法,可以提高生产的效率。In addition, the width of the
进一步地,为了使用户在将三极管10的引脚120插入到电路板通孔的过程中更加方便,将引脚的自由端的宽度逐渐缩小(如图3及图6所示),即将引脚120的自由端改为尖脚,利于插入较小的电路板通孔中。本实施方式中,引脚的自由端的最小宽度为0.36mm。Further, in order to make it more convenient for the user to insert the
如图5及图6所示,分别为传统的三极管与本实施方式的三极管的成品示意图。本实施方式的三极管成本的引脚长度(利用塑封模具把芯片200、键合丝300及部分框架100用塑封料,如环氧树脂,包封起来后外露的框架引脚的长度)从传统的15mm缩短为7.5mm。在其他实施方式中三极管的引脚长度可以根据实际产品的需要控制在5-8mm的范围内,公差控制在±0.05mm的范围内。As shown in FIG. 5 and FIG. 6 , they are schematic diagrams of finished products of a conventional triode and the triode of this embodiment, respectively. The pin length of the cost of the triode of the present embodiment (the
上述实施方式中三极管10的框架100由29.36mm减至22.06mm,节约了制作框架所用的铜材24.86%。框架引脚缩短后,减少了封装加工过程中的能源,材料消耗,如降低了粘片、键合工艺中热能的消耗,减少了保护气体氮气、氢气的使用量,以及电镀工艺中的锡的使用量等等。提高了用户的使用效率:现有的三极管是节能灯、电子镇流器、手机充电器等领域内的功率器件,其标准短腿部长度为15mm,在实际使用中,并不需要这样的长度,在应用时,将三极管插在线路板上浸锡焊接,热后将长出的腿部切去,既浪费铜材又浪费了锡,部分厂家为了节约锡,先切去一部分长腿,再插件浸锡,切齐,增加了一道工序。由于引脚缩短,既减少了原材料及成品的重量,降低了运输成本,提高了运输效率。In the above embodiment, the
以上所述实施例仅表达了本实用新型的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本实用新型专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本实用新型构思的前提下,还可以做出若干变形和改进,这些都属于本实用新型的保护范围。因此,本实用新型专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementations of the utility model, and the description thereof is relatively specific and detailed, but it should not be construed as limiting the patent scope of the utility model. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the scope of protection of the utility model patent should be based on the appended claims.
Claims (8)
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| Application Number | Priority Date | Filing Date | Title |
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| CN200820213029.8U CN201323195Y (en) | 2008-10-29 | 2008-10-29 | Triode |
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| CN200820213029.8U CN201323195Y (en) | 2008-10-29 | 2008-10-29 | Triode |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543932A (en) * | 2012-02-06 | 2012-07-04 | 深圳市晶导电子有限公司 | Packaging structure of semiconductor device |
| CN106001328A (en) * | 2016-06-24 | 2016-10-12 | 鲁班嫡系机器人 | Electronic component and cutting device and equipment thereof |
| CN108155154A (en) * | 2017-11-29 | 2018-06-12 | 苏州诺纳可电子科技有限公司 | A kind of triode |
| CN108172614A (en) * | 2017-11-29 | 2018-06-15 | 苏州诺纳可电子科技有限公司 | an electronic triode |
| US11735509B2 (en) * | 2019-03-22 | 2023-08-22 | Mitsubishi Electric Corporation | Power semiconductor device and manufacturing method thereof |
-
2008
- 2008-10-29 CN CN200820213029.8U patent/CN201323195Y/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543932A (en) * | 2012-02-06 | 2012-07-04 | 深圳市晶导电子有限公司 | Packaging structure of semiconductor device |
| CN106001328A (en) * | 2016-06-24 | 2016-10-12 | 鲁班嫡系机器人 | Electronic component and cutting device and equipment thereof |
| CN106001328B (en) * | 2016-06-24 | 2019-05-31 | 鲁班嫡系机器人 | Electronic component and cutting device and equipment thereof |
| CN108155154A (en) * | 2017-11-29 | 2018-06-12 | 苏州诺纳可电子科技有限公司 | A kind of triode |
| CN108172614A (en) * | 2017-11-29 | 2018-06-15 | 苏州诺纳可电子科技有限公司 | an electronic triode |
| US11735509B2 (en) * | 2019-03-22 | 2023-08-22 | Mitsubishi Electric Corporation | Power semiconductor device and manufacturing method thereof |
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