CN201183847Y - Thermal field structure of a polysilicon ingot furnace with a layer of insulation strips - Google Patents
Thermal field structure of a polysilicon ingot furnace with a layer of insulation strips Download PDFInfo
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- CN201183847Y CN201183847Y CNU2008200311000U CN200820031100U CN201183847Y CN 201183847 Y CN201183847 Y CN 201183847Y CN U2008200311000 U CNU2008200311000 U CN U2008200311000U CN 200820031100 U CN200820031100 U CN 200820031100U CN 201183847 Y CN201183847 Y CN 201183847Y
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- 238000009413 insulation Methods 0.000 title claims abstract description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 14
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005266 casting Methods 0.000 claims abstract description 7
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 7
- 239000010439 graphite Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 19
- 239000007788 liquid Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
本实用新型涉及一种多晶硅铸锭炉内的设备,特别是一种具有一层保温条的多晶硅铸锭炉的热场结构,包括保温隔热笼体、保温隔热笼体内安装在侧面和顶面的加热器、放置坩埚的石墨冷却块,在保温隔热笼体的内腔四周设置一层保温条,这一层保温条组成高h为73-83mm,宽b为77-87mm的保温带。通过试验,和原来保温隔热笼体内设置上下层叠的三层保温条相比,它的晶体的成长的固液界面呈现为凹型,周围的晶体的成长速度快于中间的结晶,在有效区域中的微晶含量降低,使得生产出来的晶锭中的微晶量下降。
The utility model relates to equipment in a polysilicon ingot casting furnace, in particular to a thermal field structure of a polysilicon ingot casting furnace with a layer of thermal insulation strips, which includes a thermal insulation cage installed on the side and the top of the thermal insulation cage. The heater on the surface, the graphite cooling block for the crucible, and a layer of insulation strips are arranged around the inner cavity of the heat insulation cage. This layer of insulation strips forms an insulation belt with a height h of 73-83mm and a width b of 77-87mm. . Through the test, compared with the original three-layer insulation strips stacked up and down in the thermal insulation cage, the solid-liquid interface of its crystal growth is concave, and the growth rate of the surrounding crystals is faster than that of the middle crystals. In the effective area The crystallite content is reduced, so that the amount of crystallite in the produced crystal ingot is reduced.
Description
技术领域 technical field
本实用新型涉及一种多晶硅铸锭炉内的设备,特别是一种具有一层保温条的多晶硅铸锭炉的热场结构。The utility model relates to equipment in a polysilicon ingot furnace, in particular to a thermal field structure of a polysilicon ingot furnace with a layer of insulation strips.
背景技术 Background technique
多晶硅在生长的过程中,由于热场的不稳定,会在晶体内部产生微晶,在DSS450多晶铸造炉热场没改变的情况下,每个生产出来的晶锭里的微晶含量达到49.9%,这样最终产品的良品率就会大大降低。晶体的生长方向是由下向上的,保温条的作用是使晶块四周的温度不会冷却的太快,使晶体垂直生长,防止晶体没有长完就结晶,从而产生微晶。原有DSS450多晶硅铸造炉的保温条是三根,这样晶体在生长到一半的时候就结晶,结晶的固液界面呈水平状,而这种方式是最不理想的。During the growth of polysilicon, due to the instability of the thermal field, microcrystals will be generated inside the crystal. When the thermal field of the DSS450 polycrystalline casting furnace does not change, the content of microcrystals in each ingot produced reaches 49.9% %, so the yield rate of the final product will be greatly reduced. The growth direction of the crystal is from the bottom to the top. The function of the insulation strip is to prevent the temperature around the crystal block from cooling too quickly, so that the crystal grows vertically, and prevents the crystal from crystallizing before it is fully grown, thereby producing microcrystals. The original DSS450 polysilicon casting furnace had three insulating strips, so that the crystals would crystallize halfway through the growth, and the crystallized solid-liquid interface was horizontal, and this method was the least ideal.
实用新型内容Utility model content
为了克服现有的多晶硅铸锭炉生产出来的晶锭的微晶比例过高,影响产品质量的不足,本实用新型提供一种结晶质量优异的具有一层保温条的多晶硅铸锭炉的热场结构。In order to overcome the problem that the crystal ingot produced by the existing polysilicon ingot furnace has too high a crystallite ratio and affects product quality, the utility model provides a thermal field of a polysilicon ingot furnace with excellent crystal quality and a layer of insulation strips structure.
本实用新型所采用的技术方案是:一种具有一层保温条的多晶硅铸锭炉的热场结构,包括保温隔热笼体、保温隔热笼体内安装在侧面和顶面的加热器、放置坩埚的石墨冷却块以及设置在保温隔热笼体内腔四周的依次层叠的保温带,保温带的高h为73-83mm,宽b为77-87mm,由一层保温条组成。The technical scheme adopted by the utility model is: a thermal field structure of a polysilicon ingot furnace with a layer of thermal insulation strips, including a thermal insulation cage body, a heater installed on the side and top surface of the thermal insulation cage body, and a The graphite cooling block of the crucible and the successively stacked insulation belts arranged around the inner cavity of the thermal insulation cage, the height h of the insulation belt is 73-83mm, the width b is 77-87mm, and consists of a layer of insulation strips.
原有的保温隔热笼体内有三层上下层叠的保温条,现在减掉两层。减掉两层保温层后,它的晶体的成长的固液界面呈现为凹型,使得生产出来的晶锭中的微晶量下降。There are three layers of insulation strips stacked up and down in the original thermal insulation cage, and now two layers have been subtracted. After subtracting two layers of insulation layers, the solid-liquid interface of its crystal growth is concave, which reduces the amount of crystallites in the produced crystal ingot.
本实用新型的有益效果是:通过试验,和原来保温隔热笼体内设置上下层叠的三层保温条相比,它的晶体的成长的固液界面呈现为凹型,周围的晶体的成长速度快于中间的结晶,在有效区域中的微晶含量降低,使得生产出来的晶锭中的微晶量下降。The beneficial effects of the utility model are: through the test, compared with the three-layer insulation strips stacked up and down in the original thermal insulation cage, the solid-liquid interface of its crystal growth is concave, and the growth rate of the surrounding crystals is faster than In the middle of the crystallization, the crystallite content in the active area is reduced, so that the amount of crystallites in the produced boule is reduced.
附图说明 Description of drawings
下面结合附图和实施例对本实用新型进一步说明。Below in conjunction with accompanying drawing and embodiment the utility model is further described.
图1是本实用新型的结构示意图。Fig. 1 is a structural representation of the utility model.
图中:1.保温隔热笼体,2.加热器,3.石墨冷却块,4.保温条。In the figure: 1. Thermal insulation cage body, 2. Heater, 3. Graphite cooling block, 4. Thermal insulation strip.
具体实施方式 Detailed ways
如图1所示的一种具有一层保温条的多晶硅铸锭炉的热场结构,包括保温隔热笼体1、保温隔热笼体1内安装在侧面和顶面的加热器2、放置坩埚的石墨冷却块3,在保温隔热笼体1的内腔四周设置一层保温条4,这层保温条4组成高h为73-83mm,宽b为77-87mm的保温带。A kind of thermal field structure of the polysilicon ingot casting furnace with one layer of thermal insulation bar as shown in Figure 1, comprises the thermal insulation cage body 1, the heater 2 that is installed on the side and the top surface in the thermal insulation cage body 1, places The graphite cooling block 3 of the crucible is provided with a layer of insulation strip 4 around the inner cavity of the heat insulation cage body 1, and this layer of insulation strip 4 forms a high h that is 73-83mm, and a width b that is 77-87mm.
在DSS450多晶硅铸锭炉中,保温隔热笼体1内的保温条4原来有三层,现在减掉上面的两层。将硅原料加入到坩埚中,坩埚搁放在石墨冷却块3上,坩埚底部和四周衬有护板,顶部具有盖板,在溶化硅材料时,保温隔热笼体1和石墨冷却块3合拢形成加热坩埚中硅原料的热场腔室。溶化后的硅液冷却结晶时,保温隔热笼体1内的保温条4使得硅液四周的晶体生长慢于中间的结晶,晶体呈凹形生长,在有效区域中微晶的含量降低,使得出来的晶锭中的微晶的含量为从现在的49.9%下降到6.2%。In the DSS450 polysilicon ingot casting furnace, the thermal insulation bar 4 in the thermal insulation cage body 1 originally had three layers, and now the upper two layers are subtracted. Put the silicon raw material into the crucible, and the crucible rests on the graphite cooling block 3. The bottom and surrounding of the crucible are lined with protective plates, and the top has a cover plate. When melting the silicon material, the thermal insulation cage 1 and the graphite cooling block 3 are closed A thermal field chamber for heating the silicon raw material in the crucible is formed. When the melted silicon liquid cools and crystallizes, the thermal insulation bar 4 in the thermal insulation cage 1 makes the crystal growth around the silicon liquid slower than the crystal in the middle, and the crystal grows in a concave shape, and the content of microcrystals in the effective area decreases, making The content of crystallites in the out-going ingot is reduced from the current 49.9% to 6.2%.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200311000U CN201183847Y (en) | 2008-01-28 | 2008-01-28 | Thermal field structure of a polysilicon ingot furnace with a layer of insulation strips |
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| CNU2008200311000U CN201183847Y (en) | 2008-01-28 | 2008-01-28 | Thermal field structure of a polysilicon ingot furnace with a layer of insulation strips |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102031556A (en) * | 2010-12-31 | 2011-04-27 | 常州天合光能有限公司 | Growing process of polycrystalline cast ingot crystals |
| CN102758254A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heating system for single crystal furnace |
| CN105200516A (en) * | 2015-09-08 | 2015-12-30 | 浙江晟辉科技有限公司 | Polycrystalline silicon ingot casting process capable of enhancing inclusion removing effect |
-
2008
- 2008-01-28 CN CNU2008200311000U patent/CN201183847Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102031556A (en) * | 2010-12-31 | 2011-04-27 | 常州天合光能有限公司 | Growing process of polycrystalline cast ingot crystals |
| CN102031556B (en) * | 2010-12-31 | 2012-05-02 | 常州天合光能有限公司 | A growth process of polycrystalline ingot crystal |
| CN102758254A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heating system for single crystal furnace |
| CN105200516A (en) * | 2015-09-08 | 2015-12-30 | 浙江晟辉科技有限公司 | Polycrystalline silicon ingot casting process capable of enhancing inclusion removing effect |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090121 Termination date: 20130128 |
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| CF01 | Termination of patent right due to non-payment of annual fee |