CN201181705Y - Multi-chip package structure - Google Patents
Multi-chip package structure Download PDFInfo
- Publication number
- CN201181705Y CN201181705Y CNU2008201077956U CN200820107795U CN201181705Y CN 201181705 Y CN201181705 Y CN 201181705Y CN U2008201077956 U CNU2008201077956 U CN U2008201077956U CN 200820107795 U CN200820107795 U CN 200820107795U CN 201181705 Y CN201181705 Y CN 201181705Y
- Authority
- CN
- China
- Prior art keywords
- substrate
- chip
- memory chip
- opening
- random access
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
Description
技术领域 technical field
本实用新型是有关于一种多芯片封装结构,且特别是有关于同时堆栈多个芯片的多芯片封装结构。The utility model relates to a multi-chip packaging structure, in particular to a multi-chip packaging structure in which multiple chips are stacked at the same time.
背景技术 Background technique
在半导体生产过程中,集成电路封装(IC package)是制作的重要步骤之一,用以保护IC芯片与提供外部电性连接,以防止在输送及取置过程中外力或环境因素的破坏。此外,集成电路组件也需与电阻、电容等被动元件组合成为一个系统,才能发挥既定的功能,而电子封装(Electronic Packaging)即是用以建立集成电路组件的保护与组织架构。一般而言,在集成电路芯片制作之后进行电子封装,包括IC芯片的粘结固定、电路联机、结构密封、与电路板的接合、系统组合、直至产品完成之间的所有制作过程。电子封装的目的为完成IC芯片与其它必要的电路零件的组合,以传递电能与电路信号、提供散热途径、承载与结构保护等功能。In the semiconductor production process, integrated circuit packaging (IC package) is one of the important steps in the production. It is used to protect the IC chip and provide external electrical connections to prevent damage from external forces or environmental factors during transportation and placement. In addition, integrated circuit components also need to be combined with passive components such as resistors and capacitors to form a system in order to perform the intended function, and electronic packaging (Electronic Packaging) is used to establish the protection and organizational structure of integrated circuit components. Generally speaking, electronic packaging is carried out after the integrated circuit chip is produced, including all the production processes between the bonding and fixing of the IC chip, circuit connection, structural sealing, bonding with the circuit board, system combination, and product completion. The purpose of electronic packaging is to complete the combination of IC chips and other necessary circuit components to transmit electrical energy and circuit signals, provide heat dissipation channels, load bearing and structural protection and other functions.
在现今电子装置中,单一电子装置中常需设置多个芯片来同时执行多种功能,以满足现代人对于电子装置的需求。以移动电话(手机)为例,目前的手机中大多内建有快闪(Flash)内存芯片、动态随机存取内存(Dynamic RandomAccess Memory;DRAM)芯片及控制器芯片等。然而,上述芯片一般是分别形成于不同的封装结构,因而增加封装结构的所占空间,也增加电子装置(手机)实现轻薄和微型化的困难。In today's electronic devices, a single electronic device often needs to be provided with multiple chips to perform multiple functions at the same time, so as to meet the needs of modern people for electronic devices. Taking mobile phones (mobile phones) as an example, most of the current mobile phones are built with flash (Flash) memory chips, dynamic random access memory (Dynamic Random Access Memory; DRAM) chips and controller chips. However, the above-mentioned chips are generally formed in different packaging structures respectively, thus increasing the space occupied by the packaging structures, and also increasing the difficulty of realizing thinness and miniaturization of electronic devices (mobile phones).
发明内容 Contents of the invention
本实用新型所要解决的技术问题在于提供一种多芯片封装结构,以堆栈设置动态随机存取内存(DRAM)及闪存(Flash Memory)芯片于单一封装结构中,以节省电子装置(例如手机)的内部空间。The technical problem to be solved by the utility model is to provide a multi-chip packaging structure, in which dynamic random access memory (DRAM) and flash memory (Flash Memory) chips are stacked in a single packaging structure, so as to save the cost of electronic devices (such as mobile phones) interior space.
为了解决上述技术问题,本实用新型提供一种多芯片封装结构,其特征在于,至少包含:一基板,具有一第一表面、一第二表面及一开口,其中该开口开设于该第一表面和该第二表面之间;一动态随机存取内存芯片,设置于该基板的该第一表面上,且该动态随机存取内存芯片的一主动面是面向该开口;一闪存芯片,设置于该动态随机存取内存芯片上;至少一第一接线,电性连接于该闪存芯片与该基板之间;至少一第二接线,通过该开口来电性连接于该动态随机存取内存芯片的该主动面与该基板的该第二表面;一第一封胶体,形成于该基板的该第一表面上,并包覆该动态随机存取内存芯片、该闪存芯片及该第一接线;一第二封胶体,形成于该基板的该开口中,并包覆该开口和该第二接线;以及多个锡球,设置于该基板的该第二表面上,其中该锡球在该第二表面上的高度高于该第二封胶体的高度。In order to solve the above technical problems, the utility model provides a multi-chip packaging structure, which is characterized in that it at least includes: a substrate with a first surface, a second surface and an opening, wherein the opening is opened on the first surface Between and the second surface; a dynamic random access memory chip is arranged on the first surface of the substrate, and an active surface of the dynamic random access memory chip is facing the opening; a flash memory chip is arranged on the On the dynamic random access memory chip; at least one first wire electrically connected between the flash memory chip and the substrate; at least one second wire electrically connected to the dynamic random access memory chip through the opening The active surface and the second surface of the substrate; a first encapsulant, formed on the first surface of the substrate, and covering the dynamic random access memory chip, the flash memory chip and the first wiring; a first two sealants, formed in the opening of the substrate, and covering the opening and the second wiring; and a plurality of solder balls, disposed on the second surface of the substrate, wherein the solder balls are on the second surface The height above is higher than the height of the second encapsulant.
上述多芯片封装结构,其特点在于,还至少包含:一控制芯片,设置于该闪存芯片上,并与该基板电性连接。The above-mentioned multi-chip packaging structure is characterized in that it further includes at least: a control chip disposed on the flash memory chip and electrically connected to the substrate.
上述多芯片封装结构,其特点在于,还至少包含:一控制芯片,设置于该基板的第一表面上,并与该基板电性连接。The above-mentioned multi-chip packaging structure is characterized in that it further includes: a control chip disposed on the first surface of the substrate and electrically connected to the substrate.
上述多芯片封装结构,其特点在于,该锡球在该第二表面上的高度至少高于该第二封胶体的高度0.1mm以上。The above-mentioned multi-chip packaging structure is characterized in that the height of the solder ball on the second surface is at least 0.1 mm higher than the height of the second encapsulant.
上述多芯片封装结构,其特点在于,该多芯片封装结构电性连接于一手机的一载板上。The above-mentioned multi-chip packaging structure is characterized in that the multi-chip packaging structure is electrically connected to a carrier board of a mobile phone.
上述多芯片封装结构,其特点在于,该基板设有至少一被动元件。The above-mentioned multi-chip packaging structure is characterized in that the substrate is provided with at least one passive element.
上述多芯片封装结构,其特点在于,该基板还具有一环阶梯部,其凹设于该开口内,且连通于该第一表面,该动态随机存取内存芯片是卡掣于该环阶梯部。The above-mentioned multi-chip packaging structure is characterized in that the substrate also has a ring stepped portion, which is recessed in the opening and communicated with the first surface, and the dynamic random access memory chip is locked on the ring stepped portion .
上述多芯片封装结构,其特点在于,该基板还具有一环阶梯部,其凹设于该开口内,且位于该第二表面上,该第二接线电性连接于该动态随机存取内存芯片与该环阶梯部上。The above-mentioned multi-chip packaging structure is characterized in that the substrate also has a ring stepped part, which is recessed in the opening and located on the second surface, and the second wiring is electrically connected to the dynamic random access memory chip with the ring on the stepped part.
本实用新型还提供一种多芯片封装结构,其特点在于,至少包含:一基板,具有一第一表面、一第二表面及一开口,其中该开口开设于该第一表面和该第二表面之间;一动态随机存取内存芯片,设置于该基板的该第一表面上,且该动态随机存取内存芯片的主动面是面向该开口;一闪存芯片,设置于该动态随机存取内存芯片上;一控制芯片,设置于该闪存芯片上;多个第一接线,分别电性连接于该闪存芯片与该基板之间,以及电性连接于该控制芯片与该基板之间;至少一第二接线,通过该开口来电性连接于该动态随机存取内存芯片的另一侧与该基板的该第二表面;一第一封胶体,形成于该基板的该第一表面上,并包覆该动态随机存取内存芯片、该闪存芯片、该控制芯片及该些第一接线;一第二封胶体,形成于该基板的该开口中,并包覆该开口和该第二接线;多个锡球,设置于该基板的该第二表面上,其中该些锡球在该第二表面上的高度是高于该第二封胶体的高度;以及至少一被动元件,设置于该基板的该第一表面上。The utility model also provides a multi-chip packaging structure, which is characterized in that it at least includes: a substrate with a first surface, a second surface and an opening, wherein the opening is opened on the first surface and the second surface Between; a dynamic random access memory chip, arranged on the first surface of the substrate, and the active surface of the dynamic random access memory chip is facing the opening; a flash memory chip, arranged on the dynamic random access memory On the chip; a control chip is arranged on the flash memory chip; a plurality of first wires are respectively electrically connected between the flash memory chip and the substrate, and electrically connected between the control chip and the substrate; at least one The second wiring is electrically connected to the other side of the dynamic random access memory chip and the second surface of the substrate through the opening; a first encapsulant is formed on the first surface of the substrate and includes Covering the dynamic random access memory chip, the flash memory chip, the control chip and the first wirings; a second sealant, formed in the opening of the substrate, and covering the opening and the second wirings; a solder ball disposed on the second surface of the substrate, wherein the height of the solder balls on the second surface is higher than that of the second encapsulant; and at least one passive element disposed on the substrate on the first surface.
本实用新型还提供一种多芯片封装结构,其特点在于,至少包含:一基板,具有一第一表面、一第二表面及一开口,其中该开口开设于该第一表面和该第二表面之间;一动态随机存取内存芯片,设置于该基板的该第一表面上,且该芯片的该主动面是面向该开口;一闪存芯片,设置于该动态随机存取内存芯片上;一控制芯片,设置于该基板的第一表面上;至少一第一接线,电性连接于该闪存芯片与该基板之间;至少一第二接线,通过该开口来电性连接于该动态随机存取内存芯片的另一侧与该基板的该第二表面;至少一第三接线,电性连接于该控制芯片与该基板之间;一第一封胶体,形成于该基板的该第一表面上,并包覆该动态随机存取内存芯片、该闪存芯片、该控制芯片及该第一接线;一第二封胶体,形成于该基板的该开口中,并包覆该开口和该第二接线;多个锡球,设置于该基板的该第二表面上,其中该锡球在该第二表面上的高度高于该第二封胶体的高度;以及至少一被动元件,设置于该基板的该第一表面上。The utility model also provides a multi-chip packaging structure, which is characterized in that it at least includes: a substrate with a first surface, a second surface and an opening, wherein the opening is opened on the first surface and the second surface Between; a dynamic random access memory chip, arranged on the first surface of the substrate, and the active surface of the chip is facing the opening; a flash memory chip, arranged on the dynamic random access memory chip; a A control chip is disposed on the first surface of the substrate; at least one first wiring is electrically connected between the flash memory chip and the substrate; at least one second wiring is electrically connected to the dynamic random access through the opening The other side of the memory chip and the second surface of the substrate; at least one third wire electrically connected between the control chip and the substrate; a first encapsulant formed on the first surface of the substrate , and cover the dynamic random access memory chip, the flash memory chip, the control chip and the first wiring; a second encapsulant, formed in the opening of the substrate, and covering the opening and the second wiring a plurality of solder balls disposed on the second surface of the substrate, wherein the height of the solder balls on the second surface is higher than the height of the second encapsulant; and at least one passive element disposed on the substrate on the first surface.
因此,本实用新型的多芯片封装结构可堆栈封装多个芯片于单一封装结构中,因而可节省空间。Therefore, the multi-chip packaging structure of the present invention can stack and package multiple chips in a single packaging structure, thereby saving space.
以下结合附图和具体实施例对本实用新型进行详细描述,但不作为对本实用新型的限定。The utility model will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the utility model.
附图说明 Description of drawings
图1A和图1B是本实用新型的第一实施例的多芯片封装结构的剖面示意图;1A and 1B are schematic cross-sectional views of the multi-chip packaging structure of the first embodiment of the present invention;
图2是本实用新型的第二实施例的多芯片封装结构的剖面示意图;2 is a schematic cross-sectional view of a multi-chip packaging structure of a second embodiment of the present invention;
图3是本实用新型的第三实施例的多芯片封装结构的剖面示意图。FIG. 3 is a schematic cross-sectional view of a multi-chip packaging structure according to a third embodiment of the present invention.
其中,附图标记:Among them, reference signs:
100、100a、100b:多芯片封装结构100, 100a, 100b: multi-chip package structure
110:基板110: Substrate
111:第一表面 112:第二表面111: first surface 112: second surface
113:开口 114:被动元件113: Opening 114: Passive components
115:接垫115: Pad
116a、116b:环阶梯部116a, 116b: ring stepped portion
120:动态随机存取内存芯片120: Dynamic random access memory chip
130:闪存芯片 131:部分表面130: Flash memory chip 131: Part of the surface
140:第三芯片 141:第三接线140: The third chip 141: The third wiring
150:第一接线 160:第二接线150: first wiring 160: second wiring
170:第一封胶体 180:第二封胶体170: The first colloid 180: The second colloid
190:锡球190: tin ball
具体实施方式 Detailed ways
请参照第1A图,其是本实用新型的第一实施例的多芯片封装结构的剖面示意图。本实施例的多芯片封装结构100包含有基板110、动态随机存取内存(DRAM)芯片120、闪存(Flash Memory)芯片130、控制芯片140、第一接线150、第二接线160、第一封胶体170、第二封胶体180及多个锡球(Solder Ball)190。DRAM芯片120、闪存芯片130及控制芯片140是堆栈设置于基板110上。第一接线150是用以电性连接于闪存芯片130与基板110之间,以及控制芯片140与基板110之间。第二接线160是用以电性连接于DRAM芯片120与基板110之间,第一封胶体170是用以包覆DRAM芯片120、闪存芯片130、控制芯片140及第一接线150,第二封胶体180是用以包覆第二接线160,此些锡球190是设置于基板110的一侧表面上,以电性连接多芯片封装结构100于一电子装置(例如手机)的载板上,其载板可为:印刷电路板(Printed circuit board;PCB)、软性印刷电路板(Flexible Printed Circuits;FPC)或主机板。Please refer to FIG. 1A , which is a schematic cross-sectional view of the multi-chip packaging structure of the first embodiment of the present invention. The
如图1A所示,本实施例的基板110具有第一表面111、第二表面112及开口113,第一表面111和第二表面112是分别位于基板110的相对两侧,开口113是开设于第一表面111和第二表面112之间,且开113的面积至少小于DRAM芯片120的面积。基板110例如是由介电质材料所制成,例如:BT(Bismaleimide Triazine)热固性树脂材料、环氧树脂、陶瓷或有机玻璃纤维,并设有被动元件114、接垫115及线路(未图示)。被动元件114例如为电容、电感或电阻,接垫115及线路可形成于基板110的第一表面111和第二表面112上。在本实施例中,被动元件114可利用表面粘着(SMT)方式来设置于基板110的第一表面111上,并电性连接于接垫115和线路。然不限于此,在一些实施例中,被动元件114也可埋设于基板110中,而形成整合型被动元件基板。As shown in Figure 1A, the
如图1A所示,本实施例的DRAM芯片120可表面粘着于基板110的第一表面111上,并位于基板110的开口113上。此时,DRAM芯片120的主动面较佳是面对于基板110的第一表面111,并暴露出DRAM芯片120的部分主动面于开口113中。闪存芯片130和控制芯片140是依次地堆栈设置于DRAM芯片120的背面(也即DRAM芯片120的非主动表面)上,其中控制芯片140未完全覆盖住闪存芯片130,并暴露出闪存芯片130的一部分表面131。在本实施例中,控制芯片140的面积例如小于闪存芯片130的面积;或者,控制芯片140可仅部分设置于闪存芯片130上。As shown in FIG. 1A , the
如图1A所示,本实施例的第一接线150和第二接线160例如为金线、银线、铜线或铝线,第一接线150分别电性连接于闪存芯片130的主动面与基板110的第一表面111上的接垫115,以及电性连接于控制芯片140与基板110的第一表面111上的接垫115。第二接线160通过基板110的开口113来电性连接于DRAM芯片120的主动面上的中央接垫与基板110的第二表面112上的接垫115。As shown in FIG. 1A, the
如图1A所示,本实施例的第一封胶体170和第二封胶体180的材料例如为:环氧树脂、PMMA、聚碳酸酯(Polycarbonate)或硅胶。第一封胶体170形成于基板110的第一表面111上,用以包覆并密封DRAM芯片120、闪存芯片130、控制芯片140、第一接线150及被动元件114。第二封胶体180形成于基板110的开口113中,用以包覆并密封开口113(也即DRAM芯片120的部分主动面及中央接垫)和第二接线160。锡球190可利用例如焊球植球机(未图示)来设置于基板110的第二表面112上,其中焊球190的材料例如为:锡、铝、镍、银、铜、铟或其合金,其中锡球190在第二表面112上的高度相较于第二封胶体180的高度至少高于0.1mm以上,因而当多芯片封装结构100电性连接于载板上时,第二封胶体180不致影响锡球190对于载板的结合。As shown in FIG. 1A , the materials of the
当制造本实施例的多芯片封装结构100时,DRAM芯片120可预先结合于基板110,并连接第二接线160和形成第二封胶体180。接着,再堆栈闪存(FlashMemory)芯片130和控制芯片140于DRAM芯片120的背面上,并连接第一接线150和形成第一封胶体170,然后设置锡球190。When manufacturing the
在一实施例中,闪存芯片130和控制芯片140可预先堆栈接合于DRAM芯片120的背面上,接着,此些芯片再结合于基板110上,接着,连接第一接线150和第二接线160,以及形成第一封胶体170和第二封胶体180,然后设置锡球190。然不限于此,熟悉此领域的技术人员可通过其它不同的制作顺序来形成本实施例的多芯片封装结构100。In one embodiment, the
因此,上述多个芯片可封装于单一封装结构中,并设置于一电子装置(例如手机)中,以降低上述三种芯片于电子装置内的占用空间,因而符合电子装置轻薄化的需求。Therefore, the above-mentioned multiple chips can be packaged in a single package structure and arranged in an electronic device (such as a mobile phone), so as to reduce the occupied space of the above-mentioned three chips in the electronic device, thus meeting the demand for thinner and lighter electronic devices.
请参照图1B,其为本实用新型的第一实施例的多芯片封装结构的剖面示意图。值得注意的是,本实用新型的控制芯片140的设置并不限于上述实施例所述的方式,在一些实施例中,如图1B所示,控制芯片140也可直接设于基板110上,并利用至少一第三接线141来与基板110电性连接,而位于堆栈的闪存芯片130及DRAM芯片120的一侧,其中,闪存芯片130及DRAM芯片120的堆栈及设置方式,也与图1A所示相同。Please refer to FIG. 1B , which is a schematic cross-sectional view of the multi-chip packaging structure of the first embodiment of the present invention. It should be noted that the arrangement of the
请参照图2,其为本实用新型的第二实施例的多芯片封装结构的剖面示意图。相较于第一实施例,第二实施例的多芯片封装结构100a的基板110更具有一环阶梯部116a,其凹设于开口113内,且连通于第一表面111。当DRAM芯片120以主动面面向开口并接合于基板110的第一表面111上时,DRAM芯片120可卡掣于环阶梯部116a来设置于基板110上,并以与第一实施例所述相同的打线方式与基板110电性连接,因而降低多个芯片120、130、140于基板110上堆栈的高度,进而可减少多芯片封装结构100的整体高度。Please refer to FIG. 2 , which is a schematic cross-sectional view of a multi-chip packaging structure according to a second embodiment of the present invention. Compared with the first embodiment, the
请参照图3,其为本实用新型的第三实施例的多芯片封装结构的剖面示意图。相较于第一实施例,第三实施例的多芯片封装结构100b的基板110的环阶梯部116b是凹设于开口113内,且位于第二表面112上。此时,环阶梯部116b可设有接垫115b,第二接线160可电性连接于DRAM芯片120的中央接垫与环阶梯部116b上的接垫115b,第二封胶体180可形成于开口113和环阶梯部116b中,因而可降低第二封胶体180形成于第二表面112上的高度;或者,第二封胶体180可未突出于第二表面112。Please refer to FIG. 3 , which is a schematic cross-sectional view of a multi-chip packaging structure according to a third embodiment of the present invention. Compared with the first embodiment, the
由上述本实用新型的实施例可知,本新型的多芯片封装结构可同时封装多个芯片,因而节省封装结构所占的空间。It can be known from the above embodiments of the present invention that the multi-chip packaging structure of the present invention can package multiple chips at the same time, thereby saving the space occupied by the packaging structure.
当然,本实用新型还可有其他多种实施例,在不背离本实用新型精神及其实质的情况下,熟悉本领域的技术人员可根据本实用新型作出各种相应的改变和变形,但这些相应的改变和变形都应属于本实用新型权利要求的保护范围。Certainly, the utility model also can have other various embodiments, under the situation of not departing from the spirit and essence of the utility model, those skilled in the art can make various corresponding changes and distortions according to the utility model, but these Corresponding changes and deformations should all belong to the protection scope of the claims of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201077956U CN201181705Y (en) | 2008-03-20 | 2008-03-20 | Multi-chip package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201077956U CN201181705Y (en) | 2008-03-20 | 2008-03-20 | Multi-chip package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201181705Y true CN201181705Y (en) | 2009-01-14 |
Family
ID=40251201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201077956U Expired - Lifetime CN201181705Y (en) | 2008-03-20 | 2008-03-20 | Multi-chip package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201181705Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114093855A (en) * | 2020-08-24 | 2022-02-25 | 美光科技公司 | Stacked semiconductor die for semiconductor device assembly |
-
2008
- 2008-03-20 CN CNU2008201077956U patent/CN201181705Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114093855A (en) * | 2020-08-24 | 2022-02-25 | 美光科技公司 | Stacked semiconductor die for semiconductor device assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3143893U (en) | Multi-chip sealed package | |
| US7763964B2 (en) | Semiconductor device and semiconductor module using the same | |
| US8253231B2 (en) | Stacked integrated circuit package using a window substrate | |
| US8178960B2 (en) | Stacked semiconductor package and method of manufacturing thereof | |
| TWI536523B (en) | Integrated circuit package system with vertical interconnection and manufacturing method thereof | |
| JP2012015185A (en) | Semiconductor storage device | |
| US8603865B2 (en) | Semiconductor storage device and manufacturing method thereof | |
| CN101199052B (en) | Packaging logic and memory integrated circuits | |
| CN106449612A (en) | Stacking and packaging structure for memory chips | |
| US20030015803A1 (en) | High-density multichip module and method for manufacturing the same | |
| CN201181705Y (en) | Multi-chip package structure | |
| US20090253230A1 (en) | Method for manufacturing stack chip package structure | |
| US20230307428A1 (en) | Packaging module and electronic device | |
| JP2008187076A (en) | Circuit device and manufacturing method thereof | |
| JP4370993B2 (en) | Semiconductor device | |
| CN100416827C (en) | Package component | |
| CN101540312A (en) | Stack type chip packaging structure | |
| CN101192275A (en) | Memory card packaging structure and manufacturing method thereof | |
| KR20000040586A (en) | Multi chip package having printed circuit substrate | |
| CN100552940C (en) | Stack structure of semiconductor element embedded loading board | |
| US20090039493A1 (en) | Packaging substrate and application thereof | |
| JP2008130075A (en) | Memory card package structure and manufacturing method thereof | |
| US7781898B2 (en) | IC package reducing wiring layers on substrate and its chip carrier | |
| CN201004240Y (en) | Memory card packaging structure | |
| US7847396B2 (en) | Semiconductor chip stack-type package and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090114 |